直接沉积在硅上的多铁薄膜在新型器件中的应用

2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI:10.1109/INEC.2010.5425138

K. Prashanthi, V. Palkar

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引用次数: 0

摘要

利用脉冲激光沉积(PLD)技术研究了直接沉积在硅上的Dy修饰BiFeO3薄膜的多铁性和介电性。这些结果支持这些薄膜在基于多铁性的MEMS器件以及未来CMOS应用的栅极介质中的可用性。

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Characterization of multiferroic thin films directly deposited on silicon for novel device applications

we have investigated the multiferroic and dielectric properties in Dy modified BiFeO3 thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.

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2010 3rd International Nanoelectronics Conference (INEC)

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