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Romanian Journal of Information Science and Technology最新文献

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Student Success Prediction Using Feedforward Neural Networks 利用前馈神经网络预测学生成功
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.01
Kamil Yurtkan, Ahmet Adalıer, Umut Tekgüç
{"title":"Student Success Prediction Using Feedforward Neural Networks","authors":"Kamil Yurtkan, Ahmet Adalıer, Umut Tekgüç","doi":"10.59277/romjist.2023.2.01","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.01","url":null,"abstract":"Machine learning algorithms have been used in the last decade to predict human behavior. In education, the student's behavior, and accordingly, their success prediction is also applicable in parallel with the developments in machine learning algorithms an","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48120710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biometric Authentication Model Based on Transformation of Face Image Into a PIN Number Usable During the Covid-19 Pandemic 基于人脸图像转换为新冠肺炎大流行期间可用的PIN号码的生物识别认证模型
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.03
Nenad Badovinac, Dejan B. Simic
{"title":"Biometric Authentication Model Based on Transformation of Face Image Into a PIN Number Usable During the Covid-19 Pandemic","authors":"Nenad Badovinac, Dejan B. Simic","doi":"10.59277/romjist.2023.2.03","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.03","url":null,"abstract":"The digitization trend is developing throughout the crisis caused by the COVID-19 pandemic. The volume of digital payments is increasing. The most common way of checking the authentication in electronic payment systems is the PIN number that users type in","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46810900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiC Plasma and Electrochemical Etching for Integrated Technology Processes 集成工艺中的SiC等离子体和电化学刻蚀
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.10
Nour Beydoun, M. Lazar, Xavier Gassmann
{"title":"SiC Plasma and Electrochemical Etching for Integrated Technology Processes","authors":"Nour Beydoun, M. Lazar, Xavier Gassmann","doi":"10.59277/romjist.2023.2.10","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.10","url":null,"abstract":"This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated deep trenches in the same thick SiC substrates. This paper combines both plasma etching and electrochemical etching on p-type SiC above n-type SiC layers. Uniform and","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47827774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detecting Images with Adult Content Using SURF and Haar Wavelet 基于SURF和Haar小波的成人内容图像检测
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.02
Mohammad Mortazavi, O. Ebadati, Dang Thanh
{"title":"Detecting Images with Adult Content Using SURF and Haar Wavelet","authors":"Mohammad Mortazavi, O. Ebadati, Dang Thanh","doi":"10.59277/romjist.2023.2.02","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.02","url":null,"abstract":"Detecting images with adult content is one of the necessary and challenging problems in the fields of machine learning and machine vision. It can be used for a variety of applications such as content filtering and censoring, and user tracking, and banning","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46435921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Method of Schottky Barrier Diodes Performance Assessment 肖特基势垒二极管性能评估的改进方法
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.05
R. Pascu, G. Pristavu, Dan Oneaţă
{"title":"Enhanced Method of Schottky Barrier Diodes Performance Assessment","authors":"R. Pascu, G. Pristavu, Dan Oneaţă","doi":"10.59277/romjist.2023.2.05","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.05","url":null,"abstract":"An elaborate characterization of Si Schottky diodes, fabricated with Ti and Mo contacts, is presented. Thermal treatment in forming gas is performed in order to improve the electrical performance of the fabricated samples. X-ray diffraction measurements s","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43023208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrasensitive Electrochemical Sensor Based on Vertical Graphene for SARS-CoV-2 Protein N Detection 基于垂直石墨烯的超灵敏电化学传感器检测SARS-CoV-2蛋白N
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.09
E. Chiriac, B. Adiaconiţă, P. Preda
{"title":"Ultrasensitive Electrochemical Sensor Based on Vertical Graphene for SARS-CoV-2 Protein N Detection","authors":"E. Chiriac, B. Adiaconiţă, P. Preda","doi":"10.59277/romjist.2023.2.09","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.09","url":null,"abstract":"Monitoring and controlling infection is required in order to prevent the progression of the coronavirus severe acute respiratory syndrome 2(SARS-CoV-2). To accomplish this goal, the development and implementation of sensitive, quick and accurate diagnosti","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42990082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of 0-level Packaged Dual SAW Pressure and Temperature Sensors on GaN Thin Membranes GaN薄膜上0级封装双SAW压力温度传感器的研制
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.08
D. Vasilache, Aleaxandra Nicoloiu, G. Boldeiu
{"title":"Development of 0-level Packaged Dual SAW Pressure and Temperature Sensors on GaN Thin Membranes","authors":"D. Vasilache, Aleaxandra Nicoloiu, G. Boldeiu","doi":"10.59277/romjist.2023.2.08","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.08","url":null,"abstract":"The paper presents the design, manufacturing and characterization of 0-level packaged dual SAW pressure and temperature sensors developed on GaN/Si/Mo thin membranes. Molybdenum film was deposited on the backside of membrane, to support a higher pressure.","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44574388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Relationship Between Structural and Optical Properties in Vanadium Pentoxide 五氧化二钒结构与光学性质的关系
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.07
C. Romanițan, I. Mihalache, S. Vulpe
{"title":"Relationship Between Structural and Optical Properties in Vanadium Pentoxide","authors":"C. Romanițan, I. Mihalache, S. Vulpe","doi":"10.59277/romjist.2023.2.07","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.07","url":null,"abstract":"Spray pyrolysis technique (SPT) and radio-frequency magnetron sputtering (RF-MS) were used to obtain vanadium oxide (VxOy) layers. The surface morphology was visualized using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Further, t","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43815191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target 用于光电晶体管靶的10kv 4H-SiC BJT的设计、制造和表征
4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.06
Ali AMMAR, Mihai LAZAR, Bertrand VERGNE
{"title":"Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target","authors":"Ali AMMAR, Mihai LAZAR, Bertrand VERGNE","doi":"10.59277/romjist.2023.2.06","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.06","url":null,"abstract":"For medium voltage, the SiC BJT is a convenient solution to reduce the on-losses and it could have the advantage to be optical controlled, to ease the serial connection of BJT. The design of a 10 kV, 10 A SiC BJT is described. The different fabrication st","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135891569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Blended On-Campus and At-Home Approach to Laboratories on Electronic Circuits 电子电路实验室的校园与家庭相结合的方法
IF 3.5 4区 计算机科学
Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI: 10.59277/romjist.2023.2.04
R. Onet, M. Neag, A. Fazakas
{"title":"A Blended On-Campus and At-Home Approach to Laboratories on Electronic Circuits","authors":"R. Onet, M. Neag, A. Fazakas","doi":"10.59277/romjist.2023.2.04","DOIUrl":"https://doi.org/10.59277/romjist.2023.2.04","url":null,"abstract":"This paper presents a blended approach to organizing laboratories for undergraduate Bachelor-level courses on electronics circuits and systems. The main idea is to combine on-campus laboratory sessions with at-home experiments performed individually by e","PeriodicalId":54448,"journal":{"name":"Romanian Journal of Information Science and Technology","volume":null,"pages":null},"PeriodicalIF":3.5,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48361136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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