Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

IF 3.7 4区计算机科学 Q1 COMPUTER SCIENCE, THEORY & METHODS

Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI:10.59277/romjist.2023.2.06

Ali AMMAR, Mihai LAZAR, Bertrand VERGNE

引用次数: 0

Abstract

For medium voltage, the SiC BJT is a convenient solution to reduce the on-losses and it could have the advantage to be optical controlled, to ease the serial connection of BJT. The design of a 10 kV, 10 A SiC BJT is described. The different fabrication st

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用于光电晶体管靶的10kv 4H-SiC BJT的设计、制造和表征

在中压情况下，SiC BJT是降低导通损耗的一种方便的解决方案，并且具有光控的优点，简化了BJT的串行连接。介绍了一种10kv、10a碳化硅BJT的设计。不同的制作方法

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Romanian Journal of Information Science and Technology 工程技术-计算机：理论方法

CiteScore

5.50

自引率

8.60%

发文量

审稿时长

>12 weeks

期刊介绍： The primary objective of this journal is the publication of original results of research in information science and technology. There is no restriction on the addressed topics, the only acceptance criterion being the originality and quality of the articles, proved by independent reviewers. Contributions to recently emerging areas are encouraged. Romanian Journal of Information Science and Technology (a publication of the Romanian Academy) is indexed and abstracted in the following Thomson Reuters products and information services: • Science Citation Index Expanded (also known as SciSearch®), • Journal Citation Reports/Science Edition.