Enhanced Method of Schottky Barrier Diodes Performance Assessment

IF 3.7 4区计算机科学 Q1 COMPUTER SCIENCE, THEORY & METHODS

Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI:10.59277/romjist.2023.2.05

R. Pascu, G. Pristavu, Dan Oneaţă

引用次数: 0

Abstract

An elaborate characterization of Si Schottky diodes, fabricated with Ti and Mo contacts, is presented. Thermal treatment in forming gas is performed in order to improve the electrical performance of the fabricated samples. X-ray diffraction measurements s

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肖特基势垒二极管性能评估的改进方法

介绍了用Ti和Mo触点制作的硅肖特基二极管的详细特性。在成型气体中进行热处理以提高所制造的样品的电性能。X射线衍射测量

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Romanian Journal of Information Science and Technology 工程技术-计算机：理论方法

CiteScore

5.50

自引率

8.60%

发文量

审稿时长

>12 weeks

期刊介绍： The primary objective of this journal is the publication of original results of research in information science and technology. There is no restriction on the addressed topics, the only acceptance criterion being the originality and quality of the articles, proved by independent reviewers. Contributions to recently emerging areas are encouraged. Romanian Journal of Information Science and Technology (a publication of the Romanian Academy) is indexed and abstracted in the following Thomson Reuters products and information services: • Science Citation Index Expanded (also known as SciSearch®), • Journal Citation Reports/Science Edition.