GaN薄膜上0级封装双SAW压力温度传感器的研制

IF 3.7 4区计算机科学 Q1 COMPUTER SCIENCE, THEORY & METHODS

Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI:10.59277/romjist.2023.2.08

D. Vasilache, Aleaxandra Nicoloiu, G. Boldeiu

引用次数: 0

摘要

本文介绍了在GaN/Si/Mo薄膜上开发的0级封装双SAW压力和温度传感器的设计、制造和表征。在膜的背面沉积钼膜，以支持更高的压力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of 0-level Packaged Dual SAW Pressure and Temperature Sensors on GaN Thin Membranes

The paper presents the design, manufacturing and characterization of 0-level packaged dual SAW pressure and temperature sensors developed on GaN/Si/Mo thin membranes. Molybdenum film was deposited on the backside of membrane, to support a higher pressure.

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来源期刊

Romanian Journal of Information Science and Technology 工程技术-计算机：理论方法

CiteScore

5.50

自引率

8.60%

发文量

审稿时长

>12 weeks

期刊介绍： The primary objective of this journal is the publication of original results of research in information science and technology. There is no restriction on the addressed topics, the only acceptance criterion being the originality and quality of the articles, proved by independent reviewers. Contributions to recently emerging areas are encouraged. Romanian Journal of Information Science and Technology (a publication of the Romanian Academy) is indexed and abstracted in the following Thomson Reuters products and information services: • Science Citation Index Expanded (also known as SciSearch®), • Journal Citation Reports/Science Edition.