SiC Plasma and Electrochemical Etching for Integrated Technology Processes

IF 3.7 4区计算机科学 Q1 COMPUTER SCIENCE, THEORY & METHODS

Romanian Journal of Information Science and Technology Pub Date : 2023-03-27 DOI:10.59277/romjist.2023.2.10

Nour Beydoun, M. Lazar, Xavier Gassmann

引用次数: 0

Abstract

This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated deep trenches in the same thick SiC substrates. This paper combines both plasma etching and electrochemical etching on p-type SiC above n-type SiC layers. Uniform and

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集成工艺中的SiC等离子体和电化学刻蚀

本文报道了在相同厚度的SiC衬底上对碳化硅（SiC）进行深度蚀刻以实现隔离深沟的研究。本文将等离子体刻蚀和电化学刻蚀相结合，在n型SiC层上对p型SiC进行刻蚀。制服和

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Romanian Journal of Information Science and Technology 工程技术-计算机：理论方法

CiteScore

5.50

自引率

8.60%

发文量

审稿时长

>12 weeks

期刊介绍： The primary objective of this journal is the publication of original results of research in information science and technology. There is no restriction on the addressed topics, the only acceptance criterion being the originality and quality of the articles, proved by independent reviewers. Contributions to recently emerging areas are encouraged. Romanian Journal of Information Science and Technology (a publication of the Romanian Academy) is indexed and abstracted in the following Thomson Reuters products and information services: • Science Citation Index Expanded (also known as SciSearch®), • Journal Citation Reports/Science Edition.