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Electric-Field Control of Photon Indistinguishability in Cascaded Decays in Quantum Dots 量子点级联衰减中光子不可分辨性的电场控制
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-18 DOI: 10.1021/acs.nanolett.5c01354
Gabriel Undeutsch, Maximilian Aigner, Ailton J Garcia, Jr., Johannes Reindl, Melina Peter, Simon Mader, Christian Weidinger, Saimon F. Covre da Silva, Santanu Manna, Eva Schöll, Armando Rastelli
{"title":"Electric-Field Control of Photon Indistinguishability in Cascaded Decays in Quantum Dots","authors":"Gabriel Undeutsch, Maximilian Aigner, Ailton J Garcia, Jr., Johannes Reindl, Melina Peter, Simon Mader, Christian Weidinger, Saimon F. Covre da Silva, Santanu Manna, Eva Schöll, Armando Rastelli","doi":"10.1021/acs.nanolett.5c01354","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01354","url":null,"abstract":"Photon indistinguishability, entanglement, and antibunching are key ingredients in quantum optics and photonics. Decay cascades in quantum emitters offer a simple method to create entangled-photon-pairs with negligible multipair generation probability. However, the degree of indistinguishability of the photons emitted in a cascade is intrinsically limited by the lifetime ratio of the involved transitions. Here we show that, for the biexciton–exciton cascade in a quantum dot, this ratio can be widely tuned by an applied electric field. Hong-Ou-Mandel interference measurements of two subsequently emitted biexciton photons show that their indistinguishability increases with increasing field, following the theoretically predicted behavior. At the same time, the emission line width stays close to the transform-limit, favoring applications relying on the interference among photons emitted by different sources.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"36 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143846590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Antifouling PTFE Hollow Fiber Microfiltration Membrane with a Double-Defense Mechanism 具有双重防护机制的防污PTFE中空纤维微滤膜
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-18 DOI: 10.1021/acs.nanolett.5c01108
Qiang Wu, Dapeng Li, Jing Liu, Shijun Long, Yiwan Huang, Xuefeng Li
{"title":"Antifouling PTFE Hollow Fiber Microfiltration Membrane with a Double-Defense Mechanism","authors":"Qiang Wu, Dapeng Li, Jing Liu, Shijun Long, Yiwan Huang, Xuefeng Li","doi":"10.1021/acs.nanolett.5c01108","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01108","url":null,"abstract":"Polytetrafluorethylene (PTFE) is the preferred material for highly polluted wastewater treatment. Hydrophilic modification of the PTFE hollow fiber membrane can further enhance its filtration performance and durability. Yet, it still remains a challenge to construct a robust hydrophilic coating on the PTFE surface. Here we report a surface engineering strategy of <i>in situ</i> coating a PTFE hollow fiber membrane with poly(vinyl alcohol) (PVA) and polyion complex (PIC) double-layer (DL) hydrogels. The first PVA hydrogel layer was covalently bonded to <i>N</i>-β-(aminoethyl)-γ-aminopropyl trimethoxysilane (AEAPTS)-grafted PTFE via a glutaraldehyde (GA)-induced Schiff base reaction and aldol condensation, respectively, while the second PIC hydrogel layer was strongly anchored on PVA through hydrogen bonding and topological entanglements. The resulting PVA/PIC DL hydrogel coating exhibited favorable strength and chemical resistance. Moreover, the double-defense mechanism provided by the hydration layer and polyzwitterionic brushes endowed the membrane with durable microfiltration and antifouling performances by effectively repelling various types of pollutants.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"28 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143849661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emissive Chalcogenide Perovskite Nanowires 发射型硫系钙钛矿纳米线
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-18 DOI: 10.1021/acs.nanolett.5c00815
Yuxin Jiang, Han K. D. Le, Lior Verbitsky, Hannah DeVyldere, Alexander M. Oddo, Bruce Pan, Hee-geun Song, Cheng Zhu, Heqing Zhu, Mary C. Scott, Peidong Yang
{"title":"Emissive Chalcogenide Perovskite Nanowires","authors":"Yuxin Jiang, Han K. D. Le, Lior Verbitsky, Hannah DeVyldere, Alexander M. Oddo, Bruce Pan, Hee-geun Song, Cheng Zhu, Heqing Zhu, Mary C. Scott, Peidong Yang","doi":"10.1021/acs.nanolett.5c00815","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c00815","url":null,"abstract":"Efficient and stable one-dimensional semiconductor nanowires are critical for the development of next-generation on-chip optoelectronics. Here, we report a synthetic approach to produce high-quality nanowires based on chalcogenide perovskite via a vapor phase reaction inside a sealed ampule. An epitaxial vapor-phase growth mechanism is proposed. The nanowires are shown to be single crystalline and highly structurally stable, with a preferential growth along the [010] direction. Red and green photoluminescence (PL) is observed from BaZrS<sub>3</sub> and SrHfS<sub>3</sub> nanowires, respectively, and the emission is shown to be tunable with varying compositions. PL lifetime is measured by fitting the decay curve with a biexponential model. The longer radiative recombination lifetime component is on the time scale of nanoseconds, indicating good nanowire sample quality with a promising potential for optoelectronic applications.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"136 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143846586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Control of Perovskite Light Emission by Integration into a Two-Dimensional Transistor 集成到二维晶体管中的钙钛矿发光的电气控制
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-17 DOI: 10.1021/acs.nanolett.5c01010
Jie Pan, Jieyu Wang, Dawei Zhou, Yang Hang, Yu Su, Shuo Wang, Zilong Mao, Linbo Feng, Shuai Yang, Chao Liu, Yao Yin, Yan Lv, Junran Zhang, Lin Wang
{"title":"Electrical Control of Perovskite Light Emission by Integration into a Two-Dimensional Transistor","authors":"Jie Pan, Jieyu Wang, Dawei Zhou, Yang Hang, Yu Su, Shuo Wang, Zilong Mao, Linbo Feng, Shuai Yang, Chao Liu, Yao Yin, Yan Lv, Junran Zhang, Lin Wang","doi":"10.1021/acs.nanolett.5c01010","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01010","url":null,"abstract":"Perovskites have emerged as a rising material category for highly efficient light emission, the electrical control of which is crucial for practical applications. However, achieving efficient, precise, wide-range, and rich control remains challenging due to their inherently poor electrical conductivity. In this work, we demonstrate the integration of two-dimensional (2D) transistors to assist the electrical control of perovskite light-emission. The implementation of a 2D channel with tunable electronic properties and strong interfacial coupling provides an effective bridge between electrical control and light emission of perovskite. The photoluminescence (PL) can be efficiently modulated with a small bias voltage of just 0.2 V, achieving a modulation efficiency of ∼87% per voltage. Furthermore, the PL enhancement can reach up to ∼700% with the assistance of gate voltage. This study underscores the promise of 2D transistors as a low-power, high-efficiency, and highly integrated platform for tailoring the optoelectronic properties of perovskites.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"75 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual SOT Switching Modes in a Single Device Geometry for Neuromorphic Computing 神经形态计算中单器件几何中的双SOT切换模式
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-17 DOI: 10.1021/acs.nanolett.5c01100
Abhijeet Ranjan, Tamkeen Farooq, Chong-Chi Chi, Hsin-Ya Sung, Rudis Ismael Salinas Padilla, Po-Hung Lin, Wen-Wei Wu, Ming-Yen Lu, Rahul Mishra, Chih-Huang Lai
{"title":"Dual SOT Switching Modes in a Single Device Geometry for Neuromorphic Computing","authors":"Abhijeet Ranjan, Tamkeen Farooq, Chong-Chi Chi, Hsin-Ya Sung, Rudis Ismael Salinas Padilla, Po-Hung Lin, Wen-Wei Wu, Ming-Yen Lu, Rahul Mishra, Chih-Huang Lai","doi":"10.1021/acs.nanolett.5c01100","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01100","url":null,"abstract":"Neuromorphic computing aims to replicate the brain’s efficient processing through artificial neurons and synapses, requiring binary and multilevel switching. We present a PtMn/(Co/Pd)<sub>4</sub>/Ta device that uniquely enables dual spin–orbit torque (SOT) switching modes─binary and multilevel (analog)─within the same geometry and stack structure, eliminating the need for device modifications. Binary SOT switching is achieved via domain wall nucleation and propagation at moderate current levels (∼65 mA), while multilevel switching occurs via domain nucleation mode without significant propagation after a high-current treatment (∼85 mA). The transition between two modes originates from structural changes after the current treatment. These modes allow for neuronal and synaptic functionalities, with the device achieving 96% accuracy in digit/letter recognition on the MNIST data set using an artificial neural network (ANN). The device’s robust perpendicular magnetic anisotropy (PMA), dual-mode switching under a small in-plane field (<i>H</i><sub>X</sub>), and simplified fabrication underscore its promise as an energy-efficient solution for neuromorphic computing.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143842148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bimerons as Edge States in Thin Magnetic Strips 薄磁条中边缘态的双分子
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-17 DOI: 10.1021/acs.nanolett.4c06167
Mario Castro, David Gálvez-Poblete, Sebastián Castillo-Sepúlveda, Vagson L. Carvalho-Santos, Alvaro S. Nunez, Sebastian Allende
{"title":"Bimerons as Edge States in Thin Magnetic Strips","authors":"Mario Castro, David Gálvez-Poblete, Sebastián Castillo-Sepúlveda, Vagson L. Carvalho-Santos, Alvaro S. Nunez, Sebastian Allende","doi":"10.1021/acs.nanolett.4c06167","DOIUrl":"https://doi.org/10.1021/acs.nanolett.4c06167","url":null,"abstract":"Magnetic bimerons offer a compelling alternative to skyrmions in next-generation spintronic devices. These topologically equivalent structures arise in chiral magnetic systems with in-plane magnetization driven by anisotropies or external magnetic fields. However, their use in current-driven systems is hindered by the bimeron Hall effect, which causes transverse motion and edge annihilation. Addressing these limitations, we uncover a novel mechanism for stabilizing bimeron propagation under current-driven conditions. We demonstrate that bimerons can propagate along thin ferromagnetic strips without annihilation when the easy-axis anisotropy and electric current are orthogonal. Our findings show a 6-fold velocity increase near strip edges due to boundary interactions. Furthermore, bimerons remain stable in curved geometries, allowing robust propagation in complex racetracks. This behavior also extends to bimeron chains, which propagate in parallel, forming stable and efficient configurations for information transport. These findings open new pathways toward practical and efficient bimeron-based racetrack memory technologies.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"108 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Damage Resistance of Mo/Si Multilayer Mirror with Carbon Barrier Layers under Intense Nanosecond EUV Irradiation 具有碳势垒层的Mo/Si多层反射镜在纳秒级强EUV照射下的抗损伤性增强
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-17 DOI: 10.1021/acs.nanolett.5c01457
Chao Yun, Shuhui Li, Yinzhuo Hu, Xiangyue Liu, Zhanglin Hu, Danqiao Xu, Zhe Zhang, Qiushi Huang, Wenbin Li, Zhanshan Wang
{"title":"Enhanced Damage Resistance of Mo/Si Multilayer Mirror with Carbon Barrier Layers under Intense Nanosecond EUV Irradiation","authors":"Chao Yun, Shuhui Li, Yinzhuo Hu, Xiangyue Liu, Zhanglin Hu, Danqiao Xu, Zhe Zhang, Qiushi Huang, Wenbin Li, Zhanshan Wang","doi":"10.1021/acs.nanolett.5c01457","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01457","url":null,"abstract":"The enhancement of damage-resistance capabilities has long been pursued for the development of multilayer mirrors in the field of extreme ultraviolet lithography. Here, single-shot damage experiments were conducted on periodic Mo/Si and Mo/C/Si/C multilayers using nanosecond 13.5 nm EUV radiation. It is revealed that the incorporation of carbon barrier layers significantly enhances the single-shot damage threshold of Mo/Si by about 46%. The crater-like and bump-like damages caused by compaction and expansion are, respectively, observed for Mo/Si and Mo/C/Si/C multilayers. According to characterization results, different damage mechanisms for these two samples have been identified, which are the diffusion reaction for the Mo/Si multilayer and the nonuniform graphitization for the Mo/C/Si/C multilayer. The nonuniform graphitization mechanism is further illustrated by molecular dynamics simulations. Based on the measured multilayer structure, the optical properties of the damaged Mo/C/Si/C multilayer were evaluated at a fluence of 2.68 J/cm<sup>2</sup> and found to be maintained at a high level.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"37 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advancing Self-Powered Devices with Novel MXene/Graphene Oxide/Siloxene Frameworks on Textiles: Bridging Chemistry and Sustainability 用新型MXene/氧化石墨烯/硅氧烷框架在纺织品上推进自供电装置:桥接化学和可持续性
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-17 DOI: 10.1021/acs.nanolett.5c00288
Aamir Rasheed, Sara Ajmal, Wen He, Seung Goo Lee, Ghulam Dastgeer, Haonan Zhang, Leilei Shu, Dae Joon Kang, Peng Li, Mingzai Wu, Peihong Wang
{"title":"Advancing Self-Powered Devices with Novel MXene/Graphene Oxide/Siloxene Frameworks on Textiles: Bridging Chemistry and Sustainability","authors":"Aamir Rasheed, Sara Ajmal, Wen He, Seung Goo Lee, Ghulam Dastgeer, Haonan Zhang, Leilei Shu, Dae Joon Kang, Peng Li, Mingzai Wu, Peihong Wang","doi":"10.1021/acs.nanolett.5c00288","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c00288","url":null,"abstract":"Recent advancements in self-charging power devices highlight the potential of dielectric nanofillers in polymer matrixes to improve the performance of microsupercapacitor–triboelectric nanogenerator (TENG) integrated devices. However, achieving homogeneous dispersion of nanofillers into polymer matrixes remains a key bottleneck, often leading to inconsistent performance, reduced stability, and lower energy efficiency. This work presents an innovative chemical functionalization strategy covalently knitting MXene/graphene oxide (GO)/siloxene and MXene/reduced GO/siloxene networks into textile substrates, resulting in a consistent output performance and the development of a durable device. The single-electrode TENG delivered an output voltage of 380 V, a current density of 6.3 μA/cm<sup>2</sup>, a power density of 627 μW/cm<sup>2</sup>, and the transfer of 0.55 ± 0.03 μC of charge. The integrated device charged a voltage of 2.4 V after 110 s of continuous hand tapping, powering smart electronics. These results showcase the potential of chemically engineered heterostructures to address longstanding challenges in self-charging devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"13 34 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-Molecule SERS Discrimination of Proline from Hydroxyproline Assisted by a Deep Learning Model 深度学习模型辅助脯氨酸与羟脯氨酸的单分子 SERS 识别
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-17 DOI: 10.1021/acs.nanolett.5c01177
Yingqi Zhao, Kuo Zhan, Pei-Lin Xin, Zuyan Chen, Shuai Li, Francesco De Angelis, Jian-An Huang
{"title":"Single-Molecule SERS Discrimination of Proline from Hydroxyproline Assisted by a Deep Learning Model","authors":"Yingqi Zhao, Kuo Zhan, Pei-Lin Xin, Zuyan Chen, Shuai Li, Francesco De Angelis, Jian-An Huang","doi":"10.1021/acs.nanolett.5c01177","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01177","url":null,"abstract":"Discriminating low-abundance hydroxylation is a crucial and unmet need for early disease diagnostics and therapeutic development due to the small hydroxyl group with 17.01 Da. While single-molecule surface-enhanced Raman spectroscopy (SERS) sensors can detect hydroxylation, subsequent data analysis suffers from signal fluctuations and strong interference from citrates. Here, we used our plasmonic particle-in-pore sensor, occurrence frequency histogram of the single-molecule SERS spectra, and a one-dimensional convolutional neural network (1D-CNN) model to achieve single-molecule discrimination of hydroxylation. The histogram extracted spectral features of the whole data set to overcome the signal fluctuations and helped the citrate-replaced particle-in-pore sensor to generate clean signals of the hydroxylation for model training. As a result, the discrimination of single-molecule SERS signals of proline and hydroxyproline was successful by the 1D-CNN model with 96.6% accuracy for the first time. The histogram further validated that the features extracted by the 1D-CNN model corresponded to hydroxylation-induced spectral changes.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deterministic Placement of Achiral Emitters in Superchiral Fields for Superior Chiral Photoluminescence 超手性光致发光中非手性发光体的确定性放置
IF 10.8 1区 材料科学
Nano Letters Pub Date : 2025-04-17 DOI: 10.1021/acs.nanolett.5c01417
Xiaolin Lu, Yong Tan, Zhiyuan Gao, Tao Ding
{"title":"Deterministic Placement of Achiral Emitters in Superchiral Fields for Superior Chiral Photoluminescence","authors":"Xiaolin Lu, Yong Tan, Zhiyuan Gao, Tao Ding","doi":"10.1021/acs.nanolett.5c01417","DOIUrl":"https://doi.org/10.1021/acs.nanolett.5c01417","url":null,"abstract":"Chiral luminescence holds promise for various applications, but achieving strong, pixelated emission with a large dissymmetry factor (<i>g</i><sub>lum</sub>) for on-chip integration remains challenging. Here we address this challenge by optically growing CdS emitters within the superchiral fields of Au spiral metasurfaces. This precise placement enhances emitter–field interaction, yielding chiral photoluminescence with a <i>g</i><sub>lum</sub> of up to ∼0.5 and an ∼30-fold intensity enhancement. We demonstrate that both the excitation wavelength and emitter location significantly impact chiral luminescence quality, highlighting the critical role of resonant excitation and spatial alignment with superchiral fields. These findings provide crucial guidelines for designing high-performance chiral luminescence devices suitable for on-chip photonic integration.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"38 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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