Low Power FA2PbI4/SiO2 Bilayer Memristors with Pt Nanoparticles Exhibiting Reconfigurable Synaptic and Neuron Properties for Compact Optoelectronic Neuromorphic Systems.

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-10-05 DOI:10.1021/acs.nanolett.5c03475

Panagiotis Bousoulas,Spyros Orfanoudakis,Danai Spathi,Victoras Pagonis,Leonidas Tsetseris,Charalampos Tsioustas,Polychronis Tsipas,Athanassios G Kontos,Thomas Stergiopoulos,Dimitris Tsoukalas

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Abstract

The development of artificial neural networks with biorealistic computing properties represents a frontier in the neuromorphic computing era. However, achieving compact and energy-efficient integration of silicon-based synapses and neurons remains challenging due to complexities in their electrical circuits. Herein, we fabricated a low power Ag/SiO2/FA2PbI4/Pt nanoparticles/ITO bilayer memristor with reconfigurable properties, exhibiting dual switching modes and neuromorphic functionalities. These effects were experimentally investigated through transient response and endurance measurements, while valuable insights were provided using a comprehensive numerical model. The SiO2/FA2PbI4 and FA2PbI4/Pt nanoparticle interfaces played a critical role in regulating ion migration, stabilizing filament dynamics and enhancing device reliability. A compact optoelectronic neuromorphic system was demonstrated by integrating synaptic and neuronal elements, enabling precise control of the firing activity. An ultralow power consumption (∼10 fJ/spike) was achieved, comparable to that of the human brain and state-of-the-art memristive technologies, thereby paving the way for energy-efficient optoelectronic computing platforms.

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具有Pt纳米粒子的低功耗FA2PbI4/SiO2双层记忆电阻器具有可重构的突触和神经元特性，用于紧凑型光电神经形态系统。

具有生物现实计算特性的人工神经网络的发展代表了神经形态计算时代的一个前沿。然而，由于其电路的复杂性，实现硅基突触和神经元的紧凑和节能集成仍然具有挑战性。在此，我们制作了低功率Ag/SiO2/FA2PbI4/Pt纳米颗粒/ITO双层忆阻器，具有可重构特性，具有双开关模式和神经形态功能。这些影响通过瞬态响应和耐久性测量进行了实验研究，同时通过综合数值模型提供了有价值的见解。SiO2/FA2PbI4和FA2PbI4/Pt纳米颗粒界面在调节离子迁移、稳定灯丝动力学和提高器件可靠性方面发挥了关键作用。一个紧凑的光电神经形态系统通过整合突触和神经元元件，能够精确控制放电活动。实现了超低功耗（约10 fJ/尖峰），可与人脑和最先进的记忆技术相媲美，从而为节能光电计算平台铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.