Doklady Physics最新文献

Dual-Gate Al0.23Ga0.77N/GaN MOSHEMT-Based Biosensor for Simultaneous Detection of CEA and HER2 Cancer Biomarker 基于双栅Al0.23Ga0.77N/GaN moshemt的同时检测CEA和HER2肿瘤生物标志物的生物传感器

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-09-09 DOI: 10.1134/S1028335826600719

Rohit Ranjan, Harsh Vikram Singh, Sarvesh Dubey

{"title":"Dual-Gate Al0.23Ga0.77N/GaN MOSHEMT-Based Biosensor for Simultaneous Detection of CEA and HER2 Cancer Biomarker","authors":"Rohit Ranjan, Harsh Vikram Singh, Sarvesh Dubey","doi":"10.1134/S1028335826600719","DOIUrl":"10.1134/S1028335826600719","url":null,"abstract":"This work presents a dual-gate Al0.23Ga0.77N/GaN MOSHEMT biosensor for the simultaneous detection of two significant CEA and HER2 cancer biomarkers. The proposed device employs two independently functionalized gate electrodes which enabling parallel sensing through a shared two-dimensional electron gas (2DEG) channel. The gates are laterally positioned and electrically separated by a 50 nm Al2O3 isolation gap which facilitates selective and multiplexed biomarker detection on a single platform. A bilayer dielectric stack of HfO2 and Al2O3 is utilized to minimize gate leakage current and enhance sensing capability. The device performance is analysed using Silvaco ATLAS TCAD simulations with appropriate polarization based physical models. The simulation results show that the CEA-functionalized gate exhibits a sensitivity of 1.06 × 10–6 A/µm per unit concentration. The biosensor achieves a sensitivity of 2.95 × 10–7 A/µm per unit concentration at a drain voltage of 10 V during simultaneous detection of HER2 and CEA. The proposed structure enables efficient multiplexed biomarker sensing on a single chip and demonstrates improved performance over traditional single gate HEMT biosensors.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"327 - 339"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mixed-Phase Fe3O4/FeO Nanoclusters Derived from Jojoba Oil: Structural Insights and Electrical Performance for Sustainable Electronic Applications 荷荷巴油衍生的混合相Fe3O4/FeO纳米团簇：结构洞察和可持续电子应用的电气性能

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-09-09 DOI: 10.1134/S1028335826600756

Abdulaziz Almalki

{"title":"Mixed-Phase Fe3O4/FeO Nanoclusters Derived from Jojoba Oil: Structural Insights and Electrical Performance for Sustainable Electronic Applications","authors":"Abdulaziz Almalki","doi":"10.1134/S1028335826600756","DOIUrl":"10.1134/S1028335826600756","url":null,"abstract":"The development of sustainable nanomaterials with tunable electrical and dielectric properties is essential for next-generation electronic and functional device applications. In this work, mixed-phase iron oxide nanoclusters (Fe3O4/FeO) were synthesized via a green co-precipitation route using jojoba oil as a natural reducing and stabilizing agent under mild and environmentally friendly conditions. Structural characterization by FTIR, XRD, and SEM/EDX confirmed the formation of Fe–O bonds, organic surface capping, and the coexistence of magnetite (Fe3O4) and wüstite (FeO) phases. The synthesized nanoclusters exhibited nanoscale crystallinity and aggregated spherical morphology. Electrical investigations revealed two distinct frequency-dependent conduction mechanisms: localized hopping conduction at low frequencies and thermally activated variable-range hopping at higher frequencies. The activation energy increased progressively with frequency, indicating enhanced charge transport barriers at elevated frequencies. Dielectric measurements demonstrated pronounced temperature- and frequency-dependent behavior, with enhanced polarization and increased capacitance at higher temperatures. The observed electrical transport and dielectric characteristics highlight the suitability of the synthesized Fe3O4/FeO nanoclusters for dielectric, electronic, and charge-storage-related applications. These findings demonstrate that jojoba oil provides an effective and sustainable route for producing functional iron oxide nanomaterials with promising electrical performance.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"299 - 304"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of Lateral Scaling on the High-Frequency Performance of β-Ga2O3 Back-Barrier GaN HEMTs with a Graded InAlN Buffer 横向结垢对梯度InAlN缓冲层β-Ga2O3后垒GaN hemt高频性能的影响

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-09-09 DOI: 10.1134/S102833582660080X

P. Muthu Subramanian, T. Subhashini, Jackson Daniel, Veeranki Srinivasa Rao

{"title":"Impact of Lateral Scaling on the High-Frequency Performance of β-Ga2O3 Back-Barrier GaN HEMTs with a Graded InAlN Buffer","authors":"P. Muthu Subramanian, T. Subhashini, Jackson Daniel, Veeranki Srinivasa Rao","doi":"10.1134/S102833582660080X","DOIUrl":"10.1134/S102833582660080X","url":null,"abstract":"This work investigates the impact of lateral scaling on the high-frequency characteristics of a β-Ga2O3 back-barrier (BB) HEMT incorporating a compositionally graded InAlN buffer. The proposed device structure consists of a sapphire substrate, graded InAlN buffer, β-Ga2O3 BB, GaN channel, and AlGaN barrier layer. The influence of LG and LGS on carrier confinement, electrical performance, and RF characteristics is systematically analysed. Energy band analysis reveals the formation of a deep quantum well at the heterointerface, facilitating strong 2DEG. The β-Ga2O3 BB effectively suppresses electron leakage toward the buffer region, while the graded InAlN buffer improves carrier transport through reduced scattering. The device exhibits a maximum drain current of approximately 2.4 A/mm at ({{V}_{{GS}}} = 2) V for LG = 20 nm and a peak transconductance of about 1.55 S/mm. High-frequency analysis demonstrates a maximum fT of nearly 300 GHz for optimized LGS and 250 GHz for LG = 20 nm. Furthermore, reduced gate length significantly lowers parasitic capacitances, leading to enhanced RF performance. The results indicate that lateral scaling strongly influences carrier transport, electrostatic control, and frequency response, with gate-length scaling exhibiting a more pronounced effect than source-to-gate spacing variation. The proposed β-Ga2O3 back-barrier architecture with a graded InAlN buffer demonstrates considerable potential for microwave, millimeter-wave, and advanced RF applications.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"305 - 319"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Prostate-Specific Antigen (PSA) Density Analysis Using Advanced OTFT Biosensor Technology 利用先进的OTFT生物传感器技术增强前列腺特异性抗原（PSA）密度分析

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-09-09 DOI: 10.1134/S1028335826600859

Rajesh Kumar Tiwari, Rajesh Mishra, Sanjay Kumar Sharma, Sandeep Kumar Ojha, Anushka Ojha

{"title":"Enhancing Prostate-Specific Antigen (PSA) Density Analysis Using Advanced OTFT Biosensor Technology","authors":"Rajesh Kumar Tiwari, Rajesh Mishra, Sanjay Kumar Sharma, Sandeep Kumar Ojha, Anushka Ojha","doi":"10.1134/S1028335826600859","DOIUrl":"10.1134/S1028335826600859","url":null,"abstract":"This paper explores the application of Organic Thin-Film Transistors (OTFTs) sensors in their detection of tumor cells, with a specific focus on measuring Prostate-Specific Antigen (PSA) concentration, a critical biomarker for diagnose of prostate-cancer. The study emphasizes the importance of sensitivity and specificity in the OTFT sensor’s compare to digital rectal examination (DRE) performance, as these parameters are essential for accurate cancer diagnostics. Sensitivity ensures that the sensor can detect low PSA concentrations, which is crucial for early-stage detection, while specificity minimizes false positives, distinguishing between malignant and benign conditions effectively.The input characteristics of the OTFT sensor, particularly the gate voltage, play a significant role in its ability to detect PSA. Proper calibration of the gate voltage enhances the sensor’s sensitivity, enabling the detection of subtle changes in PSA levels. The output-characteristics, represented by the drain current, provide a quantifiable measure of PSA concentration, which is essential for assessing the presence and progression of tumour cells. This study demonstrates the potential of OTFT sensors as a non-invasive, precise, and reliable method for early cancer detection. By optimizing sensitivity, specificity, and the sensor’s input–output characteristics, OTFT technology could significantly improve diagnostic accuracy and patient outcomes in cancer care.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"320 - 326"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Sensitivity Dielectric-Modulated Negative Capacitance Gate-All-Around TFET (DM-NC-GAA-TFET) Biosensor with Nanocavity for Label-Free Biomolecule Detection 用于无标记生物分子检测的高灵敏度介质调制负电容栅极全能TFET （dm - nm - gaa -TFET）纳米腔生物传感器

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600641

Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey

{"title":"High Sensitivity Dielectric-Modulated Negative Capacitance Gate-All-Around TFET (DM-NC-GAA-TFET) Biosensor with Nanocavity for Label-Free Biomolecule Detection","authors":"Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey","doi":"10.1134/S1028335826600641","DOIUrl":"10.1134/S1028335826600641","url":null,"abstract":"This study presents a high-performance dielectric-modulated Negative Capacitance Gate-All-Around Tunnel Field-Effect Transistor (DM-NC-GAA-TFET) biosensor for label-free biomolecule detection. The proposed device employs a nanocavity structure with varying dielectric constants (K) of biomolecules to improve sensing performance through enhanced gate-to-channel coupling and electrostatic control. The electrical and sensing characteristics of the biosensor are analyzed for different dielectric constants and cavity lengths. The transfer characteristics exhibit excellent switching behavior with an ON-state current of approximately 6.2 × 10−6 A and an OFF-state current of nearly 10−14 A, resulting in a high ION/IOFF ratio. The output characteristics demonstrate stable current saturation and improved channel controllability, while the transconductance reaches approximately 13.5 × 10−6 S, indicating efficient carrier transport. The effect of dielectric modulation is investigated for dielectric constants ranging from 1 to 10. The drain current increases from 5.8 × 10−6 to 6.7 × 10−6 A with increasing dielectric constant, confirming enhanced sensing capability. The proposed biosensor achieves a maximum drain current sensitivity of 8.1 × 10−7 A at K = 10. Furthermore, the subthreshold swing improves from 0.066 to 0.049 V/dec, while drain induced barrier lowering (DIBL) decreases from 0.038 to 0.021. The threshold voltage sensitivity increases from 0.085 to 0.148 for a 25 nm cavity length. These results demonstrate that the proposed DM-NC-GAA-TFET biosensor provides high sensitivity, excellent switching performance, and improved electrostatic characteristics for future low-power biosensing applications.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 8","pages":"290 - 298"},"PeriodicalIF":0.3,"publicationDate":"2026-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Statistical Analysis of Cosh Gaussian Breathers in Cubic Quintic Media Possessing Hump Shaped Quintic Nonlinearity 具有驼峰型五次非线性的三次五次介质中Cosh -高斯呼吸的统计分析

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600707

Naveen Gupta, A. K. Alex, Deepak Kumar

引用次数: 0

Relativistic Dilation and Superposition Projection of Time (State) 时间（态）的相对论膨胀与叠加投影

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600379

Fenghua Liu

{"title":"Relativistic Dilation and Superposition Projection of Time (State)","authors":"Fenghua Liu","doi":"10.1134/S1028335826600379","DOIUrl":"10.1134/S1028335826600379","url":null,"abstract":"This paper present a unified theoretical framework connecting relativistic time dilation, time–state correlation, and quantum superposition. The physical state of an object is modeled as an objective, continuous time-series function s = f(t). In the unobserved regime, the proper timeline of an object is independent of the observer’s reference frame; during observation, relativistic time dilation induces a corresponding state dilation effect, and the observed value represents the projection of the intrinsic state onto the observer’s timeline. Under elementary observation, classical behavior corresponds to a one-to-one state mapping (1 ≤ n < 2), while quantum behavior arises from a many-to-one relation (n ≥ 2) accompanied by state superposition, probabilistic outcomes, and the loss of temporal order. This paper derive formal superposition-projection formulas for time and state and apply the framework to interpret the double-slit interference experiment. The observed randomness of photon detection originates from unit-time projective sampling rather than fundamental indeterminacy, while the photon maintains a deterministic intrinsic wave function along its proper timeline. This paper predict a stepwise increase in discrete observable states as particle velocity approaches critical relativistic thresholds, supporting a continuous transition from classical to quantum behavior. This framework establishes a consistent bridge between special relativity, classical mechanics, probability theory, and quantum mechanics.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 8","pages":"251 - 258"},"PeriodicalIF":0.3,"publicationDate":"2026-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Periodic Chirp Effects on Electron Acceleration in Vacuum by Hermite–Sinh–Gaussian Laser 厄米-辛-高斯激光对真空中电子加速的周期性啁啾效应研究

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600537

Vivek Sharma, Vishal Thakur

{"title":"Investigation of Periodic Chirp Effects on Electron Acceleration in Vacuum by Hermite–Sinh–Gaussian Laser","authors":"Vivek Sharma, Vishal Thakur","doi":"10.1134/S1028335826600537","DOIUrl":"10.1134/S1028335826600537","url":null,"abstract":"In this work, vacuum electron acceleration driven by a periodic chirped Hermite–Sinh–Gaussian (HSG) laser pulse is theoretically investigated, with particular emphasis on the influence of frequency chirp parameters and beam waist on relativistic energy gain. The study demonstrates that frequency chirping significantly modifies the phase evolution of the electromagnetic field, thereby improving phase synchronism between the electron and the accelerating field. In the unchirped case, energy saturation occurs at 3.38 GeV due to rapid electron–laser dephasing. Introduction of a positive chirp enhances phase matching and prolongs the effective interaction time, leading to systematic energy enhancement. The saturation energy increases from 3.84 GeV (α = 0.002) to 4.18 GeV (α = 0.005). Similarly, the chirp modulation constant Ω plays a crucial role in dynamic frequency compensation, increasing the maximum energy to 4.18 GeV for Ω = 0.002. Furthermore, the beam waist is found to strongly influence acceleration efficiency. Larger beam waists reduce transverse ponderomotive effects, extend the interaction length, and enhance longitudinal confinement, resulting in a monotonic rise in energy up to 5.26 GeV. The results establish chirp parameters and beam waist as effective control parameters for optimizing vacuum electron acceleration.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 8","pages":"259 - 264"},"PeriodicalIF":0.3,"publicationDate":"2026-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Optical, Electrical, Thermoelectric and Photoelectrochemical Properties of Nanoscale Silver Bismuth Selenide Thin Films 纳米级硒化铋银薄膜的结构、光学、电学、热电和光电化学性质

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-10 DOI: 10.1134/S1028335826600227

P. A. Chate, D. J. Sathe

{"title":"Structural, Optical, Electrical, Thermoelectric and Photoelectrochemical Properties of Nanoscale Silver Bismuth Selenide Thin Films","authors":"P. A. Chate, D. J. Sathe","doi":"10.1134/S1028335826600227","DOIUrl":"10.1134/S1028335826600227","url":null,"abstract":"Silver bismuth selenide thin films were prepared and examined to understand their structural, optical, compositional, electrical, and thermoelectric behavior. X-ray diffraction analysis verified the formation of a phase pure hexagonal structure with good crystallinity and preferred orientation. The scanning electron images reveal a dense and continuous film composed of uniformly distributed nanoscale crystallites, with sizes ranging approximately 18–25 nm. Optical characterization showed strong absorption across the visible to near-infrared spectral region, and the optical band gap determined from Tauc plots lies within a range favorable for optoelectronic and energy-conversion applications. Electrical transport measurements revealed temperature dependent semiconducting behavior. Thermoelectric investigations conducted over the temperature range of 300–525 K exhibited a negative Seebeck coefficient throughout, indicating n-type charge transport. The Seebeck coefficient increased from 80.46 μV K–1 at 300 K to 105.49 μV K–1 at 525 K. With increasing temperature, the carrier concentration rose from 1.1 × 1019 to 1.9 × 1019 cm–3, while the carrier mobility improved from 0.3 to 0.9 cm2 V–1 s–1. The enhancement in mobility is attributed to the weakening of grain-boundary potential barriers at elevated temperatures. The corresponding fill factor was 0.48, resulting in a photoelectrochemical conversion efficiency of approximately 1.02%.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 7","pages":"243 - 249"},"PeriodicalIF":0.3,"publicationDate":"2026-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148695618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrostatic, Linearity and Sensitivity Analysis of Neutral Biomolecules Using NC-JL-GAA MOSFET-Based Biosensor 基于NC-JL-GAA mosfet生物传感器的中性生物分子静电、线性和灵敏度分析

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-10 DOI: 10.1134/S102833582660046X

Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey, Alok Kumar, Abhinav Gupta

{"title":"Electrostatic, Linearity and Sensitivity Analysis of Neutral Biomolecules Using NC-JL-GAA MOSFET-Based Biosensor","authors":"Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey, Alok Kumar, Abhinav Gupta","doi":"10.1134/S102833582660046X","DOIUrl":"10.1134/S102833582660046X","url":null,"abstract":"This study focuses on the intricate design and comprehensive investigation of electrostatic properties, analog analysis, and linearity characteristics associated with various neutral biomolecules. These investigations were conducted under varying dielectric constants, utilizing a novel device designated as the Negative Capacitance Junctionless Gate-All-Around (NC-JL-GAA) MOSFET. To evaluate the device’s sensing behavior, the analysis incorporated several neutral biomolecules, including Deoxyribonucleic Acid (DNA), Amino-propyl-tri-ethoxysilane (APTES), Streptavidin, Biotin, and air. The sensitivity of the electrostatic characteristics was thoroughly examined to ascertain the extent of their responsiveness. The simulated results demonstrate that the Subthreshold Swing (SS), Drain-Induced Barrier Lowering (DIBL), and OFF-state current (IOFF) consistently exhibit optimal performance across all investigated conditions. Notably, DNA yielded the highest ON-current (ION) and ION/IOFF ratio, thereby highlighting its superior interaction with the channel potential. These simulations were performed using the ATLAS™ 3D device simulator (SILVACO), which was calibrated against a device previously reported by other research groups. For validation purposes, the electrical and sensing characteristics of the device were benchmarked against those of other reported FET-based biosensors.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 7","pages":"221 - 233"},"PeriodicalIF":0.3,"publicationDate":"2026-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148695606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0