{"title":"Numerical Modeling of Turbulent Premixed Flames: Application to a Flame Stabilized in a Sudden Expansion","authors":"Farid Larbi, Hocine Bentrad, Anis Tcherak, Braham Benaouda Zouaoui","doi":"10.1134/S1028335826601002","DOIUrl":"10.1134/S1028335826601002","url":null,"abstract":"<p>The present study investigates the numerical modeling of turbulent premixed flames stabilized in a sudden expansion combustor using Computational Fluid Dynamics (CFD). The configuration consists of a two-dimensional axisymmetric backward-facing step combustor in which flame stabilization is achieved through the formation of a recirculation zone downstream of the sudden expansion. The governing equations of mass, momentum, energy, and species transport are solved using the Reynolds-Averaged Navier–Stokes (RANS) approach coupled with the standard <i>k</i>–ε turbulence model and appropriate combustion chemistry formulations. A structured quadrilateral mesh is employed and a mesh independence study is conducted to ensure numerical accuracy. Simulations are performed for both hydrogen–air and kerosene–air premixed combustion. The results provide detailed information on the distributions of temperature, velocity, density, turbulence quantities, flame radicals, and major combustion products. The hydrogen–air flame exhibits rapid fuel consumption, high reaction rates, and significant production of reactive radicals such as H, O, and OH in the flame front region. For the kerosene–air flame, the combustion process is characterized by the progressive depletion of fuel and oxygen accompanied by the formation of CO<sub>2</sub> and H<sub>2</sub>O products. The analysis of turbulent flame speed, progress variable, and Damköhler number demonstrates the strong influence of turbulence–chemistry interaction on flame stabilization and propagation. The recirculation zone generated by the sudden expansion plays a critical role in anchoring the flame and maintaining stable combustion. The obtained results contribute to a better understanding of turbulent premixed combustion phenomena and provide useful guidelines for the design and optimization of practical combustors with enhanced stability, efficiency, and reduced pollutant emissions.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 10","pages":"386 - 404"},"PeriodicalIF":0.3,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149309561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-11-04DOI: 10.1134/S102833582660077X
Lana Omer Ahmed
{"title":"Optical, Electronic, and Absorption Characteristics of Benzene Through Halogen Doping: A DFT Computational Study","authors":"Lana Omer Ahmed","doi":"10.1134/S102833582660077X","DOIUrl":"10.1134/S102833582660077X","url":null,"abstract":"<p>This study employs Density Functional Theory (DFT) and Monte Carlo (MC) simulations to investigate the electronic, optical, and absorption properties of halogen-doped benzene derivatives, specifically <b>Benzene,</b> Chlorobenzene (<b>PhCl</b>), Fluorobenzene (<b>PhF</b>), and Bromobenzene (<b>PhBr</b>) with carried out DFT/B3LYP level using Gaussian 09 software. The MC simulation for adsorption of the studied compounds on the Fe (110), Cu (111), and Al (111) surfaces. According to <b>asses results</b>, the potential corrosion efficiency molecular softness is listed from greatest to lowest <b>PhBr</b> > <b>PhF</b> > <b>PhCl</b> > <b>Benzene</b> compounds. Halogen doping changes the electrical and adsorption characteristics of benzene derivatives, with chlorination providing highly positive species, fluorination increasing electron donation, and bromination producing the most reactive and conductive molecule. Monte Carlo simulations show that halogen-doped derivatives adsorb onto metal surfaces, with halogen characteristics affecting adsorption efficiency. Higher temperatures and desorption lower efficacy. Behavior for conductivity and corrosion resistance.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 10","pages":"341 - 359"},"PeriodicalIF":0.3,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149309557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-11-04DOI: 10.1134/S1028335826600975
Sang Sun Choi
{"title":"Pore Architecture Evolution in Semicoke-Derived Activated Carbons","authors":"Sang Sun Choi","doi":"10.1134/S1028335826600975","DOIUrl":"10.1134/S1028335826600975","url":null,"abstract":"<p>Controlling pore architecture in carbonaceous adsorbents remains a central challenge in materials chemistry, particularly for adsorbents derived from industrial carbon-rich wastes. Here we map the complete trajectory of pore formation in semicoke-derived activated carbon (SAC), converting more than one million tonnes of annually generated waste semi-coke powder into a high-value microporous adsorbent through CO<sub>2</sub> activation across an extended temperature window of 300~1100°C. Using N<sub>2</sub> physisorption and FT-IR spectroscopy, we identify distinct regimes that collectively govern the transition from an essentially non-porous precursor to a micropore-rich adsorbent and ultimately to a structurally compromised material. The BET surface area rose from 12.50 to 498.63 m<sup>2</sup> g<sup>–1</sup> across the activation window, while microporosity and iodine adsorption capacity peaked at 900°C (64.18% and 672.2 mg g<sup>–1</sup>, respectively), where axial gasification dominates and yield remains at 82.0%. Beyond this threshold, lateral wall erosion triggers micropore coalescence and a steep yield loss to 29.3%, reducing adsorption efficiency despite continued surface area growth. FT-IR analysis confirms that CO<sub>2</sub> activation proceeds through gasification rather than chemical functionalization, as functional group types remain invariant throughout. These findings delineate the optimal activation window for industrial-scale SAC production and advance the mechanistic understanding of CO<sub>2</sub>-mediated pore engineering in coal-derived carbons, offering practical design rules for converting low-cost carbonaceous waste into high-performance adsorbents.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 10","pages":"381 - 385"},"PeriodicalIF":0.3,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149309560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-11-04DOI: 10.1134/S1028335826600914
O. L. Marchenkov
{"title":"New Method of Classical Analysis for Longitudinal Waves","authors":"O. L. Marchenkov","doi":"10.1134/S1028335826600914","DOIUrl":"10.1134/S1028335826600914","url":null,"abstract":"<p>The existing theoretical model cannot provide a reliable description of the wave packet form. Carefully analyzing this important aspect, we proved that classical mechanics predicts wave creep (energy delocalization in time). Waveform and its evolution in time, particle velocities, particle accelerations, wave speed and wave energy are derived.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 10","pages":"376 - 380"},"PeriodicalIF":0.3,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149309558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-11-04DOI: 10.1134/S1028335826600835
Ismael Elías Erazo Velasco, D. A. Kuzmin
{"title":"Computational Modeling of Anisotropic Thermal Transport in Polymer/h-BN Composites for Heat Dissipation in Electronic Devices","authors":"Ismael Elías Erazo Velasco, D. A. Kuzmin","doi":"10.1134/S1028335826600835","DOIUrl":"10.1134/S1028335826600835","url":null,"abstract":"<p>This work presents a computational study of anisotropic thermal transport in polymer/h-BN composites for heat dissipation in electronic devices. The main problem addressed is the low thermal conductivity of polymer matrices, which limits their ability to remove heat from localized sources. To overcome this limitation, hexagonal boron nitride is incorporated as a thermally conductive and electrically insulating filler. The model solves the steady-state heat-conduction equation by considering the filler fraction, platelet orientation, spatial connectivity, and interfacial thermal resistance. The results show that adding h-BN reduces the maximum temperature, increases the effective thermal conductivity, and decreases the thermal resistance of the composite. The analysis also shows that thermal performance depends not only on the amount of h-BN, but also on how the inclusions are distributed, connected, and thermally coupled to the polymer matrix. These results indicate that microstructural control is essential for designing efficient polymer/h-BN composites for electronic thermal.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 10","pages":"360 - 375"},"PeriodicalIF":0.3,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149309559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-11-04DOI: 10.1134/S1028335826600665
Prajvi Udar, Anubha Goel, Sonam Rewari
{"title":"Quantum Induced 2D Gate Engineered Junctionless (GEJ) MOSFET for Highly Reliable 5G Communication Applications—Linearity and Distortion Analysis","authors":"Prajvi Udar, Anubha Goel, Sonam Rewari","doi":"10.1134/S1028335826600665","DOIUrl":"10.1134/S1028335826600665","url":null,"abstract":"<p>In this paper, Analog/radio frequency parameters are studied for Gate Engineered Junctionless (GEJ) with gate-oxide-stack. Additionally, the device induces quantum phenomena. This paper examines the major FOMs (Figures of Merit) for analog realization, including <i>f</i><sub>T</sub> (cut-off frequency), GFP (gain-frequency product), TFP (transconductance-frequency-product), GFP (gain-frequency-product), <i>g</i><sub>d</sub> (Output Conductance), <i>V</i><sub>EA</sub> (early-voltage), <i>g</i><sub>m</sub>/<i>I</i><sub>D</sub> (Trans-conductance-generation-factor), <i>g</i><sub>m</sub> (trans-conductance), <i>A</i><sub>V</sub> ( intrinsic-gain), and many more. The parameters of the device agree with the results of the study and simulation. An important part of the simulation study was the ATLAS device-simulator.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 10","pages":"405 - 416"},"PeriodicalIF":0.3,"publicationDate":"2026-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149309562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-09-09DOI: 10.1134/S1028335826600719
Rohit Ranjan, Harsh Vikram Singh, Sarvesh Dubey
{"title":"Dual-Gate Al0.23Ga0.77N/GaN MOSHEMT-Based Biosensor for Simultaneous Detection of CEA and HER2 Cancer Biomarker","authors":"Rohit Ranjan, Harsh Vikram Singh, Sarvesh Dubey","doi":"10.1134/S1028335826600719","DOIUrl":"10.1134/S1028335826600719","url":null,"abstract":"<p>This work presents a dual-gate Al<sub>0.23</sub>Ga<sub>0.77</sub>N/GaN MOSHEMT biosensor for the simultaneous detection of two significant CEA and HER2 cancer biomarkers. The proposed device employs two independently functionalized gate electrodes which enabling parallel sensing through a shared two-dimensional electron gas (2DEG) channel. The gates are laterally positioned and electrically separated by a 50 nm Al<sub>2</sub>O<sub>3</sub> isolation gap which facilitates selective and multiplexed biomarker detection on a single platform. A bilayer dielectric stack of HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> is utilized to minimize gate leakage current and enhance sensing capability. The device performance is analysed using Silvaco ATLAS TCAD simulations with appropriate polarization based physical models. The simulation results show that the CEA-functionalized gate exhibits a sensitivity of 1.06 × 10<sup>–6</sup> A/µm per unit concentration. The biosensor achieves a sensitivity of 2.95 × 10<sup>–7</sup> A/µm per unit concentration at a drain voltage of 10 V during simultaneous detection of HER2 and CEA. The proposed structure enables efficient multiplexed biomarker sensing on a single chip and demonstrates improved performance over traditional single gate HEMT biosensors.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"327 - 339"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-09-09DOI: 10.1134/S1028335826600756
Abdulaziz Almalki
{"title":"Mixed-Phase Fe3O4/FeO Nanoclusters Derived from Jojoba Oil: Structural Insights and Electrical Performance for Sustainable Electronic Applications","authors":"Abdulaziz Almalki","doi":"10.1134/S1028335826600756","DOIUrl":"10.1134/S1028335826600756","url":null,"abstract":"<p>The development of sustainable nanomaterials with tunable electrical and dielectric properties is essential for next-generation electronic and functional device applications. In this work, mixed-phase iron oxide nanoclusters (Fe<sub>3</sub>O<sub>4</sub>/FeO) were synthesized via a green co-precipitation route using jojoba oil as a natural reducing and stabilizing agent under mild and environmentally friendly conditions. Structural characterization by FTIR, XRD, and SEM/EDX confirmed the formation of Fe–O bonds, organic surface capping, and the coexistence of magnetite (Fe<sub>3</sub>O<sub>4</sub>) and wüstite (FeO) phases. The synthesized nanoclusters exhibited nanoscale crystallinity and aggregated spherical morphology. Electrical investigations revealed two distinct frequency-dependent conduction mechanisms: localized hopping conduction at low frequencies and thermally activated variable-range hopping at higher frequencies. The activation energy increased progressively with frequency, indicating enhanced charge transport barriers at elevated frequencies. Dielectric measurements demonstrated pronounced temperature- and frequency-dependent behavior, with enhanced polarization and increased capacitance at higher temperatures. The observed electrical transport and dielectric characteristics highlight the suitability of the synthesized Fe<sub>3</sub>O<sub>4</sub>/FeO nanoclusters for dielectric, electronic, and charge-storage-related applications. These findings demonstrate that jojoba oil provides an effective and sustainable route for producing functional iron oxide nanomaterials with promising electrical performance.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"299 - 304"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doklady PhysicsPub Date : 2026-09-09DOI: 10.1134/S102833582660080X
P. Muthu Subramanian, T. Subhashini, Jackson Daniel, Veeranki Srinivasa Rao
{"title":"Impact of Lateral Scaling on the High-Frequency Performance of β-Ga2O3 Back-Barrier GaN HEMTs with a Graded InAlN Buffer","authors":"P. Muthu Subramanian, T. Subhashini, Jackson Daniel, Veeranki Srinivasa Rao","doi":"10.1134/S102833582660080X","DOIUrl":"10.1134/S102833582660080X","url":null,"abstract":"<p>This work investigates the impact of lateral scaling on the high-frequency characteristics of a β-Ga<sub>2</sub>O<sub>3</sub> back-barrier (BB) HEMT incorporating a compositionally graded InAlN buffer. The proposed device structure consists of a sapphire substrate, graded InAlN buffer, β-Ga<sub>2</sub>O<sub>3</sub> BB, GaN channel, and AlGaN barrier layer. The influence of <i>L</i><sub><i>G</i></sub> and <i>L</i><sub><i>GS</i></sub> on carrier confinement, electrical performance, and RF characteristics is systematically analysed. Energy band analysis reveals the formation of a deep quantum well at the heterointerface, facilitating strong 2DEG. The β-Ga<sub>2</sub>O<sub>3</sub> BB effectively suppresses electron leakage toward the buffer region, while the graded InAlN buffer improves carrier transport through reduced scattering. The device exhibits a maximum drain current of approximately 2.4 A/mm at <span>({{V}_{{GS}}} = 2)</span> V for <i>L</i><sub><i>G</i></sub> = 20 nm and a peak transconductance of about 1.55 S/mm. High-frequency analysis demonstrates a maximum <i>f</i><sub><i>T</i></sub> of nearly 300 GHz for optimized <i>L</i><sub><i>GS</i></sub> and 250 GHz for <i>L</i><sub><i>G</i></sub> = 20 nm. Furthermore, reduced gate length significantly lowers parasitic capacitances, leading to enhanced RF performance. The results indicate that lateral scaling strongly influences carrier transport, electrostatic control, and frequency response, with gate-length scaling exhibiting a more pronounced effect than source-to-gate spacing variation. The proposed β-Ga<sub>2</sub>O<sub>3</sub> back-barrier architecture with a graded InAlN buffer demonstrates considerable potential for microwave, millimeter-wave, and advanced RF applications.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"305 - 319"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhancing Prostate-Specific Antigen (PSA) Density Analysis Using Advanced OTFT Biosensor Technology","authors":"Rajesh Kumar Tiwari, Rajesh Mishra, Sanjay Kumar Sharma, Sandeep Kumar Ojha, Anushka Ojha","doi":"10.1134/S1028335826600859","DOIUrl":"10.1134/S1028335826600859","url":null,"abstract":"<p>This paper explores the application of Organic Thin-Film Transistors (OTFTs) sensors in their detection of tumor cells, with a specific focus on measuring Prostate-Specific Antigen (PSA) concentration, a critical biomarker for diagnose of prostate-cancer. The study emphasizes the importance of sensitivity and specificity in the OTFT sensor’s compare to digital rectal examination (DRE) performance, as these parameters are essential for accurate cancer diagnostics. Sensitivity ensures that the sensor can detect low PSA concentrations, which is crucial for early-stage detection, while specificity minimizes false positives, distinguishing between malignant and benign conditions effectively.</p><p>The input characteristics of the OTFT sensor, particularly the gate voltage, play a significant role in its ability to detect PSA. Proper calibration of the gate voltage enhances the sensor’s sensitivity, enabling the detection of subtle changes in PSA levels. The output-characteristics, represented by the drain current, provide a quantifiable measure of PSA concentration, which is essential for assessing the presence and progression of tumour cells. This study demonstrates the potential of OTFT sensors as a non-invasive, precise, and reliable method for early cancer detection. By optimizing sensitivity, specificity, and the sensor’s input–output characteristics, OTFT technology could significantly improve diagnostic accuracy and patient outcomes in cancer care.</p>","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 9","pages":"320 - 326"},"PeriodicalIF":0.3,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}