Doklady Physics最新文献

High Sensitivity Dielectric-Modulated Negative Capacitance Gate-All-Around TFET (DM-NC-GAA-TFET) Biosensor with Nanocavity for Label-Free Biomolecule Detection 用于无标记生物分子检测的高灵敏度介质调制负电容栅极全能TFET （dm - nm - gaa -TFET）纳米腔生物传感器

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600641

Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey

{"title":"High Sensitivity Dielectric-Modulated Negative Capacitance Gate-All-Around TFET (DM-NC-GAA-TFET) Biosensor with Nanocavity for Label-Free Biomolecule Detection","authors":"Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey","doi":"10.1134/S1028335826600641","DOIUrl":"10.1134/S1028335826600641","url":null,"abstract":"This study presents a high-performance dielectric-modulated Negative Capacitance Gate-All-Around Tunnel Field-Effect Transistor (DM-NC-GAA-TFET) biosensor for label-free biomolecule detection. The proposed device employs a nanocavity structure with varying dielectric constants (K) of biomolecules to improve sensing performance through enhanced gate-to-channel coupling and electrostatic control. The electrical and sensing characteristics of the biosensor are analyzed for different dielectric constants and cavity lengths. The transfer characteristics exhibit excellent switching behavior with an ON-state current of approximately 6.2 × 10−6 A and an OFF-state current of nearly 10−14 A, resulting in a high ION/IOFF ratio. The output characteristics demonstrate stable current saturation and improved channel controllability, while the transconductance reaches approximately 13.5 × 10−6 S, indicating efficient carrier transport. The effect of dielectric modulation is investigated for dielectric constants ranging from 1 to 10. The drain current increases from 5.8 × 10−6 to 6.7 × 10−6 A with increasing dielectric constant, confirming enhanced sensing capability. The proposed biosensor achieves a maximum drain current sensitivity of 8.1 × 10−7 A at K = 10. Furthermore, the subthreshold swing improves from 0.066 to 0.049 V/dec, while drain induced barrier lowering (DIBL) decreases from 0.038 to 0.021. The threshold voltage sensitivity increases from 0.085 to 0.148 for a 25 nm cavity length. These results demonstrate that the proposed DM-NC-GAA-TFET biosensor provides high sensitivity, excellent switching performance, and improved electrostatic characteristics for future low-power biosensing applications.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 8","pages":"290 - 298"},"PeriodicalIF":0.3,"publicationDate":"2026-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Statistical Analysis of Cosh Gaussian Breathers in Cubic Quintic Media Possessing Hump Shaped Quintic Nonlinearity 具有驼峰型五次非线性的三次五次介质中Cosh -高斯呼吸的统计分析

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600707

Naveen Gupta, A. K. Alex, Deepak Kumar

引用次数: 0

Relativistic Dilation and Superposition Projection of Time (State) 时间（态）的相对论膨胀与叠加投影

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600379

Fenghua Liu

{"title":"Relativistic Dilation and Superposition Projection of Time (State)","authors":"Fenghua Liu","doi":"10.1134/S1028335826600379","DOIUrl":"10.1134/S1028335826600379","url":null,"abstract":"This paper present a unified theoretical framework connecting relativistic time dilation, time–state correlation, and quantum superposition. The physical state of an object is modeled as an objective, continuous time-series function s = f(t). In the unobserved regime, the proper timeline of an object is independent of the observer’s reference frame; during observation, relativistic time dilation induces a corresponding state dilation effect, and the observed value represents the projection of the intrinsic state onto the observer’s timeline. Under elementary observation, classical behavior corresponds to a one-to-one state mapping (1 ≤ n < 2), while quantum behavior arises from a many-to-one relation (n ≥ 2) accompanied by state superposition, probabilistic outcomes, and the loss of temporal order. This paper derive formal superposition-projection formulas for time and state and apply the framework to interpret the double-slit interference experiment. The observed randomness of photon detection originates from unit-time projective sampling rather than fundamental indeterminacy, while the photon maintains a deterministic intrinsic wave function along its proper timeline. This paper predict a stepwise increase in discrete observable states as particle velocity approaches critical relativistic thresholds, supporting a continuous transition from classical to quantum behavior. This framework establishes a consistent bridge between special relativity, classical mechanics, probability theory, and quantum mechanics.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 8","pages":"251 - 258"},"PeriodicalIF":0.3,"publicationDate":"2026-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Periodic Chirp Effects on Electron Acceleration in Vacuum by Hermite–Sinh–Gaussian Laser 厄米-辛-高斯激光对真空中电子加速的周期性啁啾效应研究

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-21 DOI: 10.1134/S1028335826600537

Vivek Sharma, Vishal Thakur

{"title":"Investigation of Periodic Chirp Effects on Electron Acceleration in Vacuum by Hermite–Sinh–Gaussian Laser","authors":"Vivek Sharma, Vishal Thakur","doi":"10.1134/S1028335826600537","DOIUrl":"10.1134/S1028335826600537","url":null,"abstract":"In this work, vacuum electron acceleration driven by a periodic chirped Hermite–Sinh–Gaussian (HSG) laser pulse is theoretically investigated, with particular emphasis on the influence of frequency chirp parameters and beam waist on relativistic energy gain. The study demonstrates that frequency chirping significantly modifies the phase evolution of the electromagnetic field, thereby improving phase synchronism between the electron and the accelerating field. In the unchirped case, energy saturation occurs at 3.38 GeV due to rapid electron–laser dephasing. Introduction of a positive chirp enhances phase matching and prolongs the effective interaction time, leading to systematic energy enhancement. The saturation energy increases from 3.84 GeV (α = 0.002) to 4.18 GeV (α = 0.005). Similarly, the chirp modulation constant Ω plays a crucial role in dynamic frequency compensation, increasing the maximum energy to 4.18 GeV for Ω = 0.002. Furthermore, the beam waist is found to strongly influence acceleration efficiency. Larger beam waists reduce transverse ponderomotive effects, extend the interaction length, and enhance longitudinal confinement, resulting in a monotonic rise in energy up to 5.26 GeV. The results establish chirp parameters and beam waist as effective control parameters for optimizing vacuum electron acceleration.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 8","pages":"259 - 264"},"PeriodicalIF":0.3,"publicationDate":"2026-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, Optical, Electrical, Thermoelectric and Photoelectrochemical Properties of Nanoscale Silver Bismuth Selenide Thin Films 纳米级硒化铋银薄膜的结构、光学、电学、热电和光电化学性质

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-10 DOI: 10.1134/S1028335826600227

P. A. Chate, D. J. Sathe

{"title":"Structural, Optical, Electrical, Thermoelectric and Photoelectrochemical Properties of Nanoscale Silver Bismuth Selenide Thin Films","authors":"P. A. Chate, D. J. Sathe","doi":"10.1134/S1028335826600227","DOIUrl":"10.1134/S1028335826600227","url":null,"abstract":"Silver bismuth selenide thin films were prepared and examined to understand their structural, optical, compositional, electrical, and thermoelectric behavior. X-ray diffraction analysis verified the formation of a phase pure hexagonal structure with good crystallinity and preferred orientation. The scanning electron images reveal a dense and continuous film composed of uniformly distributed nanoscale crystallites, with sizes ranging approximately 18–25 nm. Optical characterization showed strong absorption across the visible to near-infrared spectral region, and the optical band gap determined from Tauc plots lies within a range favorable for optoelectronic and energy-conversion applications. Electrical transport measurements revealed temperature dependent semiconducting behavior. Thermoelectric investigations conducted over the temperature range of 300–525 K exhibited a negative Seebeck coefficient throughout, indicating n-type charge transport. The Seebeck coefficient increased from 80.46 μV K–1 at 300 K to 105.49 μV K–1 at 525 K. With increasing temperature, the carrier concentration rose from 1.1 × 1019 to 1.9 × 1019 cm–3, while the carrier mobility improved from 0.3 to 0.9 cm2 V–1 s–1. The enhancement in mobility is attributed to the weakening of grain-boundary potential barriers at elevated temperatures. The corresponding fill factor was 0.48, resulting in a photoelectrochemical conversion efficiency of approximately 1.02%.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 7","pages":"243 - 249"},"PeriodicalIF":0.3,"publicationDate":"2026-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148695618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrostatic, Linearity and Sensitivity Analysis of Neutral Biomolecules Using NC-JL-GAA MOSFET-Based Biosensor 基于NC-JL-GAA mosfet生物传感器的中性生物分子静电、线性和灵敏度分析

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-10 DOI: 10.1134/S102833582660046X

Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey, Alok Kumar, Abhinav Gupta

{"title":"Electrostatic, Linearity and Sensitivity Analysis of Neutral Biomolecules Using NC-JL-GAA MOSFET-Based Biosensor","authors":"Ravi Rastogi, Devendra Kumar Tripathi, Sarvesh Dubey, Alok Kumar, Abhinav Gupta","doi":"10.1134/S102833582660046X","DOIUrl":"10.1134/S102833582660046X","url":null,"abstract":"This study focuses on the intricate design and comprehensive investigation of electrostatic properties, analog analysis, and linearity characteristics associated with various neutral biomolecules. These investigations were conducted under varying dielectric constants, utilizing a novel device designated as the Negative Capacitance Junctionless Gate-All-Around (NC-JL-GAA) MOSFET. To evaluate the device’s sensing behavior, the analysis incorporated several neutral biomolecules, including Deoxyribonucleic Acid (DNA), Amino-propyl-tri-ethoxysilane (APTES), Streptavidin, Biotin, and air. The sensitivity of the electrostatic characteristics was thoroughly examined to ascertain the extent of their responsiveness. The simulated results demonstrate that the Subthreshold Swing (SS), Drain-Induced Barrier Lowering (DIBL), and OFF-state current (IOFF) consistently exhibit optimal performance across all investigated conditions. Notably, DNA yielded the highest ON-current (ION) and ION/IOFF ratio, thereby highlighting its superior interaction with the channel potential. These simulations were performed using the ATLAS™ 3D device simulator (SILVACO), which was calibrated against a device previously reported by other research groups. For validation purposes, the electrical and sensing characteristics of the device were benchmarked against those of other reported FET-based biosensors.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 7","pages":"221 - 233"},"PeriodicalIF":0.3,"publicationDate":"2026-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148695606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mixed-Mode Circuit Analysis of Negative Capacitance Heterostructure Nanotube TFETs for Analog On-Chip Applications 片上模拟应用负电容异质结构纳米管tfet的混合模式电路分析

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-10 DOI: 10.1134/S1028335826600471

Soumya Sen, Angshuman Khan

{"title":"Mixed-Mode Circuit Analysis of Negative Capacitance Heterostructure Nanotube TFETs for Analog On-Chip Applications","authors":"Soumya Sen, Angshuman Khan","doi":"10.1134/S1028335826600471","DOIUrl":"10.1134/S1028335826600471","url":null,"abstract":"This work presents a mixed-mode circuit analysis of a negative-capacitance heterostructure nanotube tunnel field-effect transistor (NC-HNT-TFET) using Silvaco ATLAS TCAD for analog-on-chip applications. The proposed device achieves a subthreshold swing (SS) of 20.2 mV/dec, a transconductance-to-current ratio (gm/ID) superior to that of a conventional Gate-All-Around (GAA) architecture, and a significantly higher intrinsic gain than MOSFET-based amplifiers, owing to enhanced drain resistance (ro). A complementary TFET common-source (CS) amplifier demonstrates a low-frequency voltage gain of 15 dB, a 3 dB and cutoff near 310 GHz, and two-pole system behaviour consistent with the extracted transfer function. The heterostructure employs a Ge/AlGaAs heterostructure with a HfO2 gate dielectric and a ferroelectric (FE) layer modelled using the Landau–Khalatnikov (LK) equation. Stability and non-hysteretic operation are confirmed through capacitance-matching analysis. The extracted RF figures of merit, cutoff frequency (fT) of 7.2 THz and maximum oscillation frequency (fmax) of 11.3 THz, are obtained by extrapolation of Y-parameter-based current-gain and unilateral-power-gain roll-offs, and are physically justified by the high tunnelling-enhanced gm and the ultra-thin ferroelectric capacitance. These results demonstrate strong potential for ultra-high-frequency analog front-end and system-on-chip integration.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 7","pages":"234 - 242"},"PeriodicalIF":0.3,"publicationDate":"2026-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148695620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of the Deviation of the Absolute Rotor Position Sensor of a Synchronous Motor from the Control Output Value of the Direct-Axis Current Regulator 同步电机转子绝对位置传感器与直轴电流调节器控制输出值偏差的确定

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-08-10 DOI: 10.1134/S1028335826600495

N. K. Tretiakov, V. P. Kuzmenko, A. P. Bobryshov, M. V. Serjantova

{"title":"Determination of the Deviation of the Absolute Rotor Position Sensor of a Synchronous Motor from the Control Output Value of the Direct-Axis Current Regulator","authors":"N. K. Tretiakov, V. P. Kuzmenko, A. P. Bobryshov, M. V. Serjantova","doi":"10.1134/S1028335826600495","DOIUrl":"10.1134/S1028335826600495","url":null,"abstract":"An algorithm for automatic alignment of the absolute rotor position sensor of a brushless permanent-magnet synchronous motor with distributed windings is proposed and developed, which makes it possible to calculate and consider the initial positioning error angle from the values of the control action of the regulator of the direct-axis component Id of the stator current. A deviation of the control output of the Id regulator in a vector field-oriented control system from the known nominal value and/or a change in the rotor rotation direction makes it possible to judge the initial error in the installation angle of the absolute rotor position sensor. It is proposed to calculate the deviation of the regulator control output in order to determine and add an offset to the rotor position angle when transforming the components of the rotating reference frame into the two-phase stationary reference frame (inverse Park transformation). A model of the converter with the electric motor has been developed. The results of mathematical simulation and full-scale experiments are presented. The relationship describing the effect of the deviation of the absolute rotor position sensor on the direct-axis current component in a control system with a speed loop is derived. The results of the effect of the encoder angle error on the control output of the direct-axis current regulator are presented.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 7","pages":"213 - 220"},"PeriodicalIF":0.3,"publicationDate":"2026-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148695619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Geomagnetic Variations in Earth’s Atmosphere Driven by Interplanetary Coronal Mass Ejections 由行星际日冕物质抛射驱动的地球大气地磁变化

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-07-17 DOI: 10.1134/S1028335825600853

Mahender Pal, Sham Singh

{"title":"Geomagnetic Variations in Earth’s Atmosphere Driven by Interplanetary Coronal Mass Ejections","authors":"Mahender Pal, Sham Singh","doi":"10.1134/S1028335825600853","DOIUrl":"10.1134/S1028335825600853","url":null,"abstract":"In this paper, we have identified and studied five major geomagnetic storms whose disturbance storm time Dst < –100 nT was calculated and examined during Solar Cycle 24 and the ascending phase of Solar Cycle 25. There have been five geomagnetic storms found on March 17, 2015; December 20, 2015; September 8, 2017; August 26, 2018; and November 4, 2021, with Dst magnitudes of –234, –155, –124, –174, and –105, correspondingly. Correlation analysis of hourly plasma parameters and Kp indices (April 22–26, 2023) shows a strong relationship (Cr = 0.76) between the IMF B component and the Kp index. The solar and interplanetary parameters as well as their connection with the parameters of geomagnetic storms, have been studied in this paper. In this study, we found that coronal mass ejection is the principal cause of severe storms. It has been determined that there is a positive correlation between sunspot numbers and solar flux (F10.7), with a correlation coefficient of 0.95. The investigation aims to evaluate how the results might be applied practically to enhance forecast accuracy and mitigation strategies for safeguarding critical infrastructure, such as satellite operations, power grids, and communication networks, during geomagnetic storms.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 4","pages":"107 - 118"},"PeriodicalIF":0.3,"publicationDate":"2026-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148459067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Supervised AdamW Optimizer Based Guided Physics Informed Neural Network for Sigmoid Controlled Variable Fractional System: Hyperchaos in Electrical Circuits 基于监督AdamW优化器的引导物理信息神经网络的Sigmoid控制变量分数系统：电路中的超混沌

IF 0.3 4区物理与天体物理

Doklady Physics Pub Date : 2026-07-17 DOI: 10.1134/S1028335826600069

Muhammad Asif, Assad Ayub, Muhammad Israr

{"title":"Supervised AdamW Optimizer Based Guided Physics Informed Neural Network for Sigmoid Controlled Variable Fractional System: Hyperchaos in Electrical Circuits","authors":"Muhammad Asif, Assad Ayub, Muhammad Israr","doi":"10.1134/S1028335826600069","DOIUrl":"10.1134/S1028335826600069","url":null,"abstract":"In this article a robust Guided Physics-Informed Neural Network (GPINNs) method is used for learning and predicting the nonlinear dynamic of variable-order fractional hyperchaotic mathematical model. Fractional orders are based on polynomial, trigonometric and hyperbolic function into the sigmoid function. This variable-order fractional hyperchaotic system has been solved with GPINNs scheme that integrates data-driven learning with physics-based constraints. Four distinct fractional-order scenarios are considered to capture a broad range of memory and hereditary effects, that are inherent in practical electronic circuits. These cases made comprehensive assessment of the ability of the model. Furthermore, the effectiveness of this approach is shown through detailed analyses of time-series evolution, phase-space projections, and training diagnostics for multiple control parameters. This framework also highlights the strong potential of GPINNs for modeling complex integer- and variable fractional-order hyperchaotic systems, with promising applications in electronic circuit design, secure communication, and advanced signal processing.","PeriodicalId":533,"journal":{"name":"Doklady Physics","volume":"71 6","pages":"194 - 212"},"PeriodicalIF":0.3,"publicationDate":"2026-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148466091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0