Calculation of the Parameters of a Modified Silicon Carbide Layer during Stoichiometric Hydrogen Ion Sputtering

Abstract

Changes in the surface composition of silicon carbide under hydrogen ion bombardment were studied based on the method of calculating the component composition and thickness of the layer of two-component targets that changed as a result of stoichiometric sputtering under irradiation with light ions. The thickness of the modified layer and its component composition were calculated. The calculations showed that the surface layers are depleted of carbon, which is consistent with the experimental results.