Optical Materials: X最新文献

Deformation-induced enhancement of Ex-emission in RbI and KI single crystals 变形诱导的RbI和KI单晶发射增强

Optical Materials: X Pub Date : 2025-05-24 DOI: 10.1016/j.omx.2025.100416

K. Shunkeyev, Sh Sagimbayeva, A. Kenzhebayeva

引用次数: 0

Special issue on selected papers from the international symposium on optical materials conference, ISOM9: Current research in optical materials 国际光学材料研讨会论文精选特刊，ISOM9：光学材料的研究现状

Optical Materials: X Pub Date : 2025-05-01 DOI: 10.1016/j.omx.2025.100412

Prof. Xavier Mateos (Guest Editors), Prof. Akira Yoshikawa (Guest Editors), Prof. Francesc Díaz (Guest Editors)

引用次数: 0

Withdrawal notice to: “Methane sensors based on ZnGa2O4 ceramics with addition of Er for combustion monitoring systems” [Opt. Mater. X 26C 100409] 撤销通知：“燃烧监测系统中基于ZnGa2O4陶瓷添加Er的甲烷传感器”[Opt. Mater.][26c100409]

Optical Materials: X Pub Date : 2025-05-01 DOI: 10.1016/j.omx.2025.100413

Аleksei V. Almaev , Zhakyp T. Karipbayev , Ernar B. Zhurkin , Nikita N. Yakovlev , Olzhas I. Kukenov , Alexandr O. Korchemagin , Gulzhanat A. Akmetova-Abdik , Kuat K. Kumarbekov , Amangeldy M. Zhunusbekov , Leonid A. Mochalov , Ekaterina A. Slapovskaya , Anatoli I. Popov

引用次数: 0

Study of the effect of phase formation processes on the change in optical and thermal properties of Nd2Zr2O7 ceramics with a pyrochlore structure 研究相形成过程对具有热核结构的 Nd2Zr2O7 陶瓷的光学和热学特性变化的影响

Optical Materials: X Pub Date : 2025-03-07 DOI: 10.1016/j.omx.2025.100410

Artem L. Kozlovskiy , Dmitriy I. Shlimas , Natalya Volodina , Gulnaz ZhMoldabayeva , Mussa Kabiyev , Marina Konuhova

{"title":"Study of the effect of phase formation processes on the change in optical and thermal properties of Nd2Zr2O7 ceramics with a pyrochlore structure","authors":"Artem L. Kozlovskiy , Dmitriy I. Shlimas , Natalya Volodina , Gulnaz ZhMoldabayeva , Mussa Kabiyev , Marina Konuhova","doi":"10.1016/j.omx.2025.100410","DOIUrl":"10.1016/j.omx.2025.100410","url":null,"abstract":"<div><div>The paper presents the results of studies of the influence of phase formation processes with variations in annealing temperature on the processes of stabilization of the crystal structure, optical and thermal properties of Nd2Zr2O7 ceramics, which have great potential for use in optoelectronic applications due to the transitions of Nd3 ions, as well as high stability to external factors with the possibility of creating transparent ceramics. During the conducted studies it was established that the stabilization temperature of the Nd2Zr2O7 phase is 1100–1250 °C, at which the throughput is maximum, and the thermal conductivity coefficient is about 2.1–2.2 W/m × K. The assessment of phase transformations and changes in optical properties revealed that an elevation in the annealing temperature, leading to stabilization of the Nd2Zr2O7 phase, leads to a decrease in the concentration of oxygen vacancies in the structure of ceramics; however, at temperatures above 1200 °C, the observed growth in oxygen vacancies is due to the effects of substitution of Zr4+ cations by Nd3+ cations, which results in formation of additional oxygen vacancies in the structure, alongside impurity inclusions in the form of a cubic phase of Zr(Nd)O2, which is a product of phase polymorphic transformations during high-temperature annealing. Alterations in the thermophysical properties of Nd2Zr2O7 ceramics are directly dependent on phase formation processes and associated changes in the concentration of oxygen vacancies, which are the determining factor influencing the heat transfer rate.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"26 ","pages":"Article 100410"},"PeriodicalIF":0.0,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143593752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Methane sensors based on ZnGa2O4 ceramics with addition of Er for combustion monitoring systems 燃烧监测系统中基于ZnGa2O4陶瓷添加Er的甲烷传感器

Optical Materials: X Pub Date : 2025-03-07 DOI: 10.1016/j.omx.2025.100409

Аleksei V. Almaev , Zhakyp T. Karipbayev , Ernar B. Zhurkin , Nikita N. Yakovlev , Olzhas I. Kukenov , Alexandr O. Korchemagin , Gulzhanat A. Akmetova-Abdik , Kuat K. Kumarbekov , Amangeldy M. Zhunusbekov , Leonid A. Mochalov , Ekaterina A. Slapovskaya , Anatoli I. Popov

{"title":"Methane sensors based on ZnGa2O4 ceramics with addition of Er for combustion monitoring systems","authors":"Аleksei V. Almaev , Zhakyp T. Karipbayev , Ernar B. Zhurkin , Nikita N. Yakovlev , Olzhas I. Kukenov , Alexandr O. Korchemagin , Gulzhanat A. Akmetova-Abdik , Kuat K. Kumarbekov , Amangeldy M. Zhunusbekov , Leonid A. Mochalov , Ekaterina A. Slapovskaya , Anatoli I. Popov","doi":"10.1016/j.omx.2025.100409","DOIUrl":"10.1016/j.omx.2025.100409","url":null,"abstract":"<div><div>Ceramic pellets of pure ZnGa2O4 and ZnGa2O4 with Er-addition are synthesized and their structural and gas-sensitive properties are investigated. The addition of Er leads to the formation of a second Er3Ga5O12 phase in the ZnGa2O4 matrix and a larger active surface which allows an 11.1-fold increase in the response of ZnGa2O4 to 104 ppm of CH4. At the maximum response temperature corresponding to 650 °C, the responses to 100 and 104 ppm of CH4 for ZnGa2O4 with Er addition were 2.91 a.u. and 20.74 a.u., respectively. ZnGa2O4 with Er addition is characterized by a wide dynamic range of CH4 concentrations, from 100 ppm to 20000 ppm, weak dependence of gas-sensitive characteristics on humidity in the relative humidity range of 30–70 %, weak changes of gas-sensitive characteristics under cyclic gas exposure. The samples also demonstrate high responses to NO2 and H2, which at a gas concentration of 100 ppm and a temperature of 650 °C are 3.37 a.u. and 4.77 a.u., respectively. A plausible mechanism of the sensing effect of ZnGa2O4 with Er addition is proposed and prospects for the development of high-temperature CH4 sensors based on the studied samples for combustion monitoring systems and determination of the ideal fuel/air mixture are discussed.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"26 ","pages":"Article 100409"},"PeriodicalIF":0.0,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatial mapping of optical constants and thickness variations in ITO films and SiO2 buffer layers ITO薄膜和SiO2缓冲层光学常数和厚度变化的空间映射

Optical Materials: X Pub Date : 2025-03-07 DOI: 10.1016/j.omx.2025.100408

I. Aulika, P. Paulsone, E. Laizane, J. Butikova, A. Vembris

{"title":"Spatial mapping of optical constants and thickness variations in ITO films and SiO2 buffer layers","authors":"I. Aulika, P. Paulsone, E. Laizane, J. Butikova, A. Vembris","doi":"10.1016/j.omx.2025.100408","DOIUrl":"10.1016/j.omx.2025.100408","url":null,"abstract":"<div><div>In this work, we present detailed spectroscopic ellipsometry (SE) measurements across thirty indium tin oxide In2O3–SnO2 (ITO) substrates, providing insights into variations in the complex refractive index <math><mrow><mover><mi>N</mi><mo>˜</mo></mover></mrow></math> for the same commercial ITO material. This study includes an analysis of the distribution of ITO surface roughness, ITO thickness, SiO2 buffer layer thickness, and the complex refractive index of ITO including electrical resistivity and its gradient. The SE mapping, conducted over a (1.5 × 1.5) cm scan area on multiple substrates of (2.5 × 2.5) cm size, reveals uniformity in above parameters within single ITO substrate. However, substantial thickness variations in the SiO2 buffer layer along with fluctuations in the <math><mrow><mover><mi>N</mi><mo>̃</mo></mover></mrow></math> of ITO are observed across the set of substrates. Our findings underscore the importance of individually assessing each ITO substrate's optical properties prior to additional layer deposition, as this precision is essential for reliable investigations of other materials, such as organic compounds in OLEDs, in both ex-situ and in-situ studies. Additionally, this article provides comprehensive optical property data for ITO substrates consisting of soda lime float glass coated with a thin SiO2 buffer layer.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"26 ","pages":"Article 100408"},"PeriodicalIF":0.0,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143620892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

La doped Lu2O3 scintillator doed Lu2O3闪烁器

Optical Materials: X Pub Date : 2025-02-23 DOI: 10.1016/j.omx.2025.100405

Jarek Glodo, Yimin Wang, Urmila Shirwadkar, Lakshmi Soundara Pandian

{"title":"La doped Lu2O3 scintillator","authors":"Jarek Glodo, Yimin Wang, Urmila Shirwadkar, Lakshmi Soundara Pandian","doi":"10.1016/j.omx.2025.100405","DOIUrl":"10.1016/j.omx.2025.100405","url":null,"abstract":"<div><div>Lu2O3 has emerged as a highly attractive host material for gamma-ray detection, primarily due to its high density (9.4 g/cm3) and effective atomic number (68). Various dopants have been explored to enhance its scintillation properties, with notable examples including Eu3+ and Yb3+. While Eu3+ doping results in high luminosity, it suffers from a prolonged decay time in the millisecond range. On the other hand, Yb3+ produces a fast scintillation response in the nanosecond range, but at the cost of a significantly lower light yield. Both dopants present limitations for gamma-ray spectroscopy.</div><div>Recently, we developed a novel variant of Lu2O3 doped with La3+. Given the high melting point of the host material (2490 °C), ceramic consolidation techniques were employed during synthesis, leveraging the optically isotropic cubic structure of the material. This composition offers a balanced set of properties, exhibiting a light yield as high as 20,000 photons/MeV and two dominant decay time components at 530 ns and 1230 ns. Additionally, the energy resolution at 662 keV was measured to be 5.3 %, which can be attributed to the material's highly proportional response.</div><div>Optimization of La3+ concentration revealed that the best results were achieved at a doping level of around 5 %. The material demonstrated excellent timing properties, with a fast rise time, <600 ps, and a single-channel timing resolution measured at 511 keV is 307ps. This composition is highly suited for radiation detection applications where intrinsic background noise is not a concern, such as in radiography. Furthermore, its superior timing characteristics and high stopping power make it attractive for Positron Emission Tomography (PET).</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"26 ","pages":"Article 100405"},"PeriodicalIF":0.0,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143600797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CsPbCl3:Yb3+ nanocrystals: Adverse effects of colloidally stable ytterbium-rich reaction by-products on luminescent down-conversion performance CsPbCl3:Yb3+纳米晶体：胶体稳定富镱反应副产物对发光下转换性能的不利影响

Optical Materials: X Pub Date : 2025-02-22 DOI: 10.1016/j.omx.2025.100407

Mathis Van de Voorde , Damien Hudry , Dmitry Busko , Bryce S. Richards , Rebecca Saive

{"title":"CsPbCl3:Yb3+ nanocrystals: Adverse effects of colloidally stable ytterbium-rich reaction by-products on luminescent down-conversion performance","authors":"Mathis Van de Voorde , Damien Hudry , Dmitry Busko , Bryce S. Richards , Rebecca Saive","doi":"10.1016/j.omx.2025.100407","DOIUrl":"10.1016/j.omx.2025.100407","url":null,"abstract":"<div><div>The development of near infra-red (NIR) emitting down-converters is a promising route for improving photovoltaic output through efficient light management. Quantum-cutting Yb3+-doped CsPbCl3 nanocrystals (NCs) are interesting for this application due to their high photoluminescence quantum yields (PLQY >100 %) and attractive NIR spectral properties which include high absorption cross section and minimal overlap between absorption and emission spectra. In this work, we fabricated CsPbCl3:Yb3+ NCs with the hot-injection method and studied them using structural/optical characterization methods such as x-ray diffraction, scanning transmission electron microscopy, energy-dispersive x-ray spectroscopy, fluorescence lifetime and quantum yield measurements. We found that the hot-injection method is susceptible to the formation of colloidally stable Yb-rich reaction by-products. After separating these by-products from the NCs, NIR PLQY increased by a relative 46 %. Although the PLQY values recorded in this study are 4–7 times lower than in other studies, these findings may explain some discrepancies in photoluminescence efficiency reported with this material.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"26 ","pages":"Article 100407"},"PeriodicalIF":0.0,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143507922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Radiation-induced degradation effects of optical properties of MgO ceramics caused by heavy ion irradiation 重离子辐照对MgO陶瓷光学性能的辐射降解效应

Optical Materials: X Pub Date : 2025-02-20 DOI: 10.1016/j.omx.2025.100406

Maxim V. Zdorovets , Artem A. Kozlovskiy , Gulnaz ZhMoldabayeva , Igor A. Ivanov , Marina Konuhova

{"title":"Radiation-induced degradation effects of optical properties of MgO ceramics caused by heavy ion irradiation","authors":"Maxim V. Zdorovets , Artem A. Kozlovskiy , Gulnaz ZhMoldabayeva , Igor A. Ivanov , Marina Konuhova","doi":"10.1016/j.omx.2025.100406","DOIUrl":"10.1016/j.omx.2025.100406","url":null,"abstract":"<div><div>The paper presents the results of a study of the connection between structural changes caused by irradiation with heavy Xe22+ ions in MgO ceramics, which are characteristic of the damage accumulation caused by exposure to nuclear fuel fission fragments. Interest in this type of ceramics, as one of the promising classes of dielectrics, is due to the potential for using them as materials for creating a matrix that holds fissile nuclear fuel, and in the case of consideration of these ceramics as dopants used to enhance the resistance of inert matrices to destruction caused by irradiation. The obtained assessment results of the alterations in the transmittance coefficient for irradiated ceramics contingent upon the irradiation fluence indicate the transmittance degradation of irradiated ceramics in the UV range, caused by the accumulation of structural distortions caused by irradiation, alongside a growth in the concentration of absorbing centers and oxygen vacancies. It has been established that the dominant type of defects in the damaged layer are oxygen vacancies, the accumulation of which occurs due to deformation distortions and the rupture of chemical bonds. At the same time, the observed change in the crystal structure volume is due to the formation of complex defects of the Mg + VO type, the formation of which results in deformation broadening of the crystal lattice parameters.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"26 ","pages":"Article 100406"},"PeriodicalIF":0.0,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143478641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses 电子束沉积不同厚度CaF2薄膜时SiO2衬底中的电荷捕获

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2025.100400

Marina Romanova , Sergii Chertopalov , Yuri Dekhtyar , Ladislav Fekete , Ján Lančok , Michal Novotný , Petr Pokorný , Anatoli I. Popov , Hermanis Sorokins , Aleksandr Vilken

{"title":"Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses","authors":"Marina Romanova , Sergii Chertopalov , Yuri Dekhtyar , Ladislav Fekete , Ján Lančok , Michal Novotný , Petr Pokorný , Anatoli I. Popov , Hermanis Sorokins , Aleksandr Vilken","doi":"10.1016/j.omx.2025.100400","DOIUrl":"10.1016/j.omx.2025.100400","url":null,"abstract":"<div><div>The charge trapping phenomenon in the SiO2 layer of Si/SiO2 substrates during the electron beam deposition of CaF2 thin films of varying thicknesses (50–277 nm) was studied. Photoelectron emission (PE) spectroscopy was employed to analyze electron trapping mechanisms induced by the deposition process. Distinct peaks corresponding to electron traps in the SiO2 layer were identified in the PE spectra of CaF2 films. The intensity of these peaks varied with the film thickness and the accumulated electron irradiation dose. The study also investigated the relaxation of the PE spectra in both vacuum and air environments. In a vacuum, the PE peaks and integrated PE intensity remained stable for at least 24 h for CaF2 films of all thicknesses. When exposed to air, the PE peaks persisted for several days in films 125 nm thick or thinner but relaxed within several hours in 277 nm films. This rapid relaxation was attributed to a relatively high irradiation dose (about 2.5 mC) obtained during the fabrication of the 277 nm film, leading to an increased concentration of ionized F centers at the SiO2–CaF2 interface and the formation of (O2–-VA) centers upon air exposure. The relaxation of the PE spectrum intensity was attributed to electron transfer from SiO2 traps to (O2–-VA) centers. Furthermore, the possibility of a 260 nm electron escape depth for CaF2 material was confirmed.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100400"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0