Spatial mapping of optical constants and thickness variations in ITO films and SiO2 buffer layers

Q2 Engineering
I. Aulika, P. Paulsone, E. Laizane, J. Butikova, A. Vembris
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引用次数: 0

Abstract

In this work, we present detailed spectroscopic ellipsometry (SE) measurements across thirty indium tin oxide In2O3–SnO2 (ITO) substrates, providing insights into variations in the complex refractive index N˜ for the same commercial ITO material. This study includes an analysis of the distribution of ITO surface roughness, ITO thickness, SiO2 buffer layer thickness, and the complex refractive index of ITO including electrical resistivity and its gradient. The SE mapping, conducted over a (1.5 × 1.5) cm scan area on multiple substrates of (2.5 × 2.5) cm size, reveals uniformity in above parameters within single ITO substrate. However, substantial thickness variations in the SiO2 buffer layer along with fluctuations in the Ñ of ITO are observed across the set of substrates. Our findings underscore the importance of individually assessing each ITO substrate's optical properties prior to additional layer deposition, as this precision is essential for reliable investigations of other materials, such as organic compounds in OLEDs, in both ex-situ and in-situ studies. Additionally, this article provides comprehensive optical property data for ITO substrates consisting of soda lime float glass coated with a thin SiO2 buffer layer.
ITO薄膜和SiO2缓冲层光学常数和厚度变化的空间映射
在这项工作中,我们提出了30个氧化铟锡In2O3-SnO2 (ITO)衬底的详细光谱椭偏(SE)测量,提供了对相同商业ITO材料的复折射率N ~变化的见解。本研究分析了ITO表面粗糙度、ITO厚度、SiO2缓冲层厚度的分布,以及ITO的复折射率(包括电阻率及其梯度)。在(2.5 × 2.5) cm尺寸的多个基板上进行(1.5 × 1.5) cm扫描区域的SE映射,揭示了单个ITO基板内上述参数的均匀性。然而,在整个衬底上观察到SiO2缓冲层的大量厚度变化以及ITO Ñ的波动。我们的研究结果强调了在附加层沉积之前单独评估每个ITO衬底光学特性的重要性,因为这种精度对于在非原位和原位研究中可靠地研究其他材料(例如oled中的有机化合物)至关重要。此外,本文还提供了由涂有薄SiO2缓冲层的钠石灰浮法玻璃组成的ITO基板的综合光学性能数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
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