变形诱导的RbI和KI单晶发射增强

Q2 Engineering
K. Shunkeyev, Sh Sagimbayeva, A. Kenzhebayeva
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引用次数: 0

摘要

在85 K下暴露于单轴弹性变形的纯RbI和KI单晶的x射线发光光谱发生了剧烈变化。自俘获激子(STE)发射的σ-分量强度(RbI和KI分别在4.2和3.9 eV时达到最大值)和释出发光(RbI和KI分别在3.05 eV和3.1 eV时达到最大值)随相对变形程度的增加呈线性增加,最大可达ε≈1%。两种发射的依赖关系I = f(ε)的相似性证实了KI和RbI中Ex-luminescence的内在起源。以KI:Tl晶体为例,研究表明,低温单轴弹性变形导致阴离子激子的平均自由程减小,进而提高了它们在规则晶格位置的自捕获效率和随后的STEs辐射衰减。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deformation-induced enhancement of Ex-emission in RbI and KI single crystals
Drastic changes in the spectra of X-ray luminescence have been detected in pure RbI and KI single crystals exposed to uniaxial elastic deformation at 85 K. The intensity of both the σ-component of self-trapped exciton (STE) emission (maxima at 4.2 and 3.9 eV in RbI and KI, respectively) and the co-called Ex-luminescence (peaked at 3.05 eV in RbI and at 3.1 eV in KI) linearly increases with relative degree of deformation up to ε ≈ 1 %. The similarity of the dependence I = f(ε) for both emissions confirms the intrinsic origin of the Ex-luminescence in KI and RbI. Using a KI:Tl crystal as an example, it has been shown that low-temperature uniaxial elastic deformation causes a reduction in the mean free path of anion excitons, and, in turn, increases the efficiency of their self-trapping at regular lattice sites and subsequent radiative decay of STEs.
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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
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