{"title":"Deformation-induced enhancement of Ex-emission in RbI and KI single crystals","authors":"K. Shunkeyev, Sh Sagimbayeva, A. Kenzhebayeva","doi":"10.1016/j.omx.2025.100416","DOIUrl":null,"url":null,"abstract":"<div><div>Drastic changes in the spectra of X-ray luminescence have been detected in pure RbI and KI single crystals exposed to uniaxial elastic deformation at 85 K. The intensity of both the <em>σ-</em>component of self-trapped exciton (STE) emission (maxima at 4.2 and 3.9 eV in RbI and KI, respectively) and the co-called <em>E</em><sub>x</sub>-luminescence (peaked at 3.05 eV in RbI and at 3.1 eV in KI) linearly increases with relative degree of deformation up to <em>ε</em> ≈ 1 %. The similarity of the dependence <em>I = f(ε)</em> for both emissions confirms the intrinsic origin of the <em>E</em><sub>x</sub>-luminescence in KI and RbI. Using a KI:Tl crystal as an example, it has been shown that low-temperature uniaxial elastic deformation causes a reduction in the mean free path of anion excitons, and, in turn, increases the efficiency of their self-trapping at regular lattice sites and subsequent radiative decay of STEs.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"27 ","pages":"Article 100416"},"PeriodicalIF":0.0000,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials: X","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S259014782500018X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
Drastic changes in the spectra of X-ray luminescence have been detected in pure RbI and KI single crystals exposed to uniaxial elastic deformation at 85 K. The intensity of both the σ-component of self-trapped exciton (STE) emission (maxima at 4.2 and 3.9 eV in RbI and KI, respectively) and the co-called Ex-luminescence (peaked at 3.05 eV in RbI and at 3.1 eV in KI) linearly increases with relative degree of deformation up to ε ≈ 1 %. The similarity of the dependence I = f(ε) for both emissions confirms the intrinsic origin of the Ex-luminescence in KI and RbI. Using a KI:Tl crystal as an example, it has been shown that low-temperature uniaxial elastic deformation causes a reduction in the mean free path of anion excitons, and, in turn, increases the efficiency of their self-trapping at regular lattice sites and subsequent radiative decay of STEs.