Optical Materials: X最新文献

{"title":"Evaluation of the optical, structural, morphological and electronic properties of Rb3Bi2I9 Perovskites films prepared by Sequential Evaporation","authors":"G. Gordillo ,&nbsp;O.G. Torres ,&nbsp;C.A. Celis ,&nbsp;M. Reinoso ,&nbsp;J I Clavijo","doi":"10.1016/j.omx.2024.100397","DOIUrl":"10.1016/j.omx.2024.100397","url":null,"abstract":"<div><div>Toxicity and poor stability remain major barriers to large-scale production of hybrid organic-inorganic lead halide perovskite solar cells. Considering the isoelectronic nature of lead (II) and bismuth (III) ions, stable and non-toxic alternatives for developing photovoltaic devices could potentially be found. Rb₃Bi₂I₉ perovskite films inherently suffer from unavoidable pinhole defects and poor surface morphology, which limit device performance. In this work we explored a dual-source thermal sequential evaporation approach to growth uniform and pinhole-free morphology of Rb₃Bi₂I₉ polycrystalline thin films. The influence of post-deposition annealing in a high-pressure N2 atmosphere on the structural, optical, morphological, and electronic properties of the resulting films was studied experimentally using X-ray diffraction (XRD), optical spectrophotometry, scanning electron microscopy (SEM), and computationally via Density Functional Theory (DFT) calculations. The results revealed that post deposition annealing significantly improves both the morphology and degradation processes of Rb₃Bi₂I₉ films, when they are exposed to environmental conditions for long periods of time.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100397"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of the application prospects of film detectors for estimation of α-radiation density","authors":"Dana S. Yerimbetova ,&nbsp;Marina Konuhova ,&nbsp;Artem L. Kozlovskiy ,&nbsp;Umitali N. Tuichiyev","doi":"10.1016/j.omx.2024.100388","DOIUrl":"10.1016/j.omx.2024.100388","url":null,"abstract":"<div><div>The aim of this research is to study the prospects of using the proposed methods of optical UV spectroscopy and X-ray diffractometry to determine the radiation density of the daughter products of radon decay - α-particles recorded using polymer track detectors. This paper presents the results of experiments on detecting the daughter products of radon decay - α-particles in a room on various floors for a fairly long time (within 6 months), the choice of which made it possible to determine not only the concentration dependences (growth in the density of registered α-particles) over time, but also to determine the lower limit for recording changes in the optical spectra of film detectors used to register α-particles. During the experiments, good convergence of the results of structural changes determined by optical spectroscopy and X-ray diffraction methods was established. These changes are caused by the processes of interaction of α-particles with a polymer detector, characterized by deformation distortion of the molecular chains of the polymer, leading to the formation of defects that affect changes in optical and electron density. The proposed methods were used to determine the connection between the interaction processes of α-particles with the molecular structure of polymer films used as detectors. It was determined that the most significant changes are observed at densities of registered α-particles above 10⁴ cm⁻², the value of which is the threshold value for identification of radon decay products using film detectors without chemical etching.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100388"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evolution of phase composition and luminescent characteristics of the La1-x-ySmxCayVO4-δ nanocrystalline phosphor","authors":"S.G. Nedilko ,&nbsp;O. Chukova ,&nbsp;A. Dorofieieva ,&nbsp;S.A. Nedilko ,&nbsp;V. Shcherbatskyi ,&nbsp;T. Voitenko ,&nbsp;M. Etter ,&nbsp;H.S. Rahimi Mosafer ,&nbsp;W. Paszkowicz ,&nbsp;Y. Zhydachevskyy ,&nbsp;A. Suchocki","doi":"10.1016/j.omx.2024.100390","DOIUrl":"10.1016/j.omx.2024.100390","url":null,"abstract":"<div><div>This work aims to clarify the relationship between the optical, particularly luminescent, characteristics of the La_1-x-ySm_xCa_yVO_4-δ powder nanosized compounds with their phase composition and concentration of dopants. According to the high-accuracy XRD data, the samples are a mixture of monoclinic and tetragonal crystal phases. The diffuse reflection and photoluminescence (PL) spectra were measured and analyzed including spectral distributions and intensity ratios of the PL bands, the positions and half-widths of envelopes of the groups of lines in the PL spectra of Sm³⁺ ions. Estimated from the diffuse reflection data the band gap values are 3.85, and 3.82, 3.75, 3.78 eV for the samples with x = 0.1, y = 0, and (x, y) = 0.05, 0.10, 0.15, respectively. The PL excitation spectra of the La_1-x-ySm_xCa_yVO_4-δ nanoparticles consist of both the wide UV wavelength band (260–360 nm) caused by transition in the VO₄³⁻ molecular groups and in a set of narrow lines caused by inner <em>f-f</em> transitions in the Sm³⁺ ions (spectral range 350–520 nm). The PL spectra of the La_1-x-ySm_xCa_yVO_4-δ nanoparticles contain four groups of lines (I – IV) resulting from the ⁴G_5/2 → ⁶H_5/2, ⁶H_7/2, ⁶H_9/2, and ⁶H_11/2 transitions, respectively, in the inner <em>f</em> shell of the Sm³⁺ ions. The concentration behavior of the Sm³⁺ ions PL characteristics is related to the evaluation of the phase composition of La_1-x-ySm_xCa_yVO_4-δ samples. It was found that the changes of the R_lum = I_(III)/I_(I), where I_(III) and I_(I) are the integrated intensities of the corresponding groups of lines, can be related to the phase composition of the La_1-x-ySm_xCa_yVO_4-δ compounds. Developed in this work the combined way of structural and optical data analysis may be useful in designing other multiphase phosphor systems containing Sm³⁺ ions.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100390"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics","authors":"Kuat K. Kumarbekov ,&nbsp;Askhat B. Kakimov ,&nbsp;Zhakyp T. Karipbayev ,&nbsp;Murat T. Kassymzhanov ,&nbsp;Mikhail G. Brik ,&nbsp;Chong-geng Ma ,&nbsp;Michał Piasecki ,&nbsp;Yana Suchikova ,&nbsp;Meldra Kemere ,&nbsp;Marina Konuhova","doi":"10.1016/j.omx.2024.100392","DOIUrl":"10.1016/j.omx.2024.100392","url":null,"abstract":"<div><div>This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain (&lt;0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions, notably the 611 nm red emission, show thermal stability, retaining ∼90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100392"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scintillator based nuclear photovoltaic batteries for power generation at microwatts level","authors":"Ibrahim Oksuz ,&nbsp;Sabin Neupane ,&nbsp;Yanfa Yan ,&nbsp;Lei R. Cao","doi":"10.1016/j.omx.2025.100401","DOIUrl":"10.1016/j.omx.2025.100401","url":null,"abstract":"<div><div>A nuclear photovoltaic battery uses scintillator to convert radiation into visible light, which is then collected by a photovoltaic (PV) cell to generate electricity. If the radiation is gamma-rays emitted from external sources, the battery may also be referred as gammavoltaic battery. In this study, a polycrystalline CdTe solar cell was optically coupled with a 2.0 cm × 2.0 cm × 1.0 cm Gadolinium Aluminum Gallium Garnet (GAGG) scintillator, and the resulting device was tested using intense gamma radiation fields from a Cs-137 (1.5 kRad/h) and a Co-60 (10 kRad/h) irradiator. Measurements with Cs-137 provided a maximum power output (P_max) of ∼288 nW, with a short-circuit current density (J_sc) of ∼1.22 μA/cm² and an open-circuit voltage (V_oc) of ∼0.34 V. In contrast, Co-60 irradiator gave a P_max of 1.5 μW, with a J_sc of ∼4.73 μA/cm² and a V_oc of ∼0.38 V. The CdTe was also paired with a Lutetium-Yttrium Oxyorthosilicate (LYSO) crystal and tested with the Cs-137 source. The experiment presents a scalable option to reach to higher power outputs by harvesting gamma radiation fields in many cases where high radiation field demands heavy shielding and is often regarded as unwanted waste.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100401"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application of EPR spectroscopy method for comparative analysis of structural damage accumulation kinetics in two-phase lithium-containing ceramics","authors":"Dmitriy I. Shlimas ,&nbsp;Daryn B. Borgekov ,&nbsp;Artem L. Kozlovskiy","doi":"10.1016/j.omx.2024.100387","DOIUrl":"10.1016/j.omx.2024.100387","url":null,"abstract":"<div><div>The aim of this study is to determine the differences in the damaged layer degradation kinetics in two-phase lithium-containing ceramics based on Li₂ZrO₃ and Li₄SiO₄ compounds in the case of irradiation with protons and helium ions, simulating the gas swelling and blistering processes, as well as the accumulation of radiolysis products in the damaged layer. During the conducted studies it was established that in the case of proton irradiation, the dominant role at fluences of 10¹⁵–10¹⁷ cm⁻² is played by oxygen vacancies, the change in the concentration of which upon reaching critical values causes a decrease in the thermophysical properties, and disordering of the damaged layer. In this case, the accumulation of radiolysis products in the form of HC₂ – and Zr³⁺ -defects in the structure of the damaged layer is observed at fluences of 5 × 10¹⁷ cm⁻², while when irradiated with He²⁺ ions, the formation of these types of HC₂ – and Zr³⁺ -defects is observed at a fluence of 10¹⁷ cm⁻². Comparison of the concentration dependences of defects in the damaged layer on the atomic displacement value under irradiation with protons and He²⁺ ions revealed that the formation of oxygen vacancies under irradiation with He²⁺ ions is more intense than in the case of irradiation with protons, which in turn results in more pronounced processes of accumulation of radiolysis products in the case of high-dose irradiation.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100387"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of short-pulsed Ion irradiation on optical and photoelectrical properties of thin gallium oxide films","authors":"Zhanymgul Koishybayeva ,&nbsp;Fedor Konusov ,&nbsp;Sergey Pavlov ,&nbsp;Dmitrii Sidelev ,&nbsp;Artur Nassyrbayev ,&nbsp;Dmitry Cheshev ,&nbsp;Ruslan Gadyrov ,&nbsp;Vladislav Tarbokov ,&nbsp;Abdirash Akilbekov","doi":"10.1016/j.omx.2024.100394","DOIUrl":"10.1016/j.omx.2024.100394","url":null,"abstract":"<div><div>In this work the influence of a short-pulsed ion irradiation with a high flux (∼5.5∙10¹⁹ cm⁻²s⁻¹) on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method. A part of deposited films was annealed in the air environment (900 °C, 2 h) for synthesis of β-Ga₂O₃ phase. Obtained films were subjected to the short-pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 90 ns, current density on the target - up to 15 A/cm²). The influence of the annealing and the irradiation on spectral dependences of absorption, the bandgap width and the Urbach energy have been determined. It was found that irradiation leads to amorphization of crystalline β-Ga₂O₃ films and a significant change in optical characteristics. In addition, we measured the magnitude of surface dark and photoconductivity of the films. Also, the field and spectral dependences of the photosensitivity of the films were researched. As a result, it was established that short-pulsed irradiation improves the photoelectric properties of amorphous gallium oxide films. The reasons of it are discussed.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100394"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of rhodium doping for photocatalytic activity of barium titanate","authors":"G.A. Kaptagay ,&nbsp;B.M. Satanova ,&nbsp;A.U. Abuova ,&nbsp;M. Konuhova ,&nbsp;Zh.Ye. Zakiyeva ,&nbsp;U. Zh Tolegen ,&nbsp;N.O. Koilyk ,&nbsp;F.U. Abuova","doi":"10.1016/j.omx.2024.100382","DOIUrl":"10.1016/j.omx.2024.100382","url":null,"abstract":"<div><div>By means of DFT oxygen evolution reaction on Rh-doped BaTiO₃ (001) surface has been modeled. Gibbs free energies for each step of the reaction as well as the values of overpotential have been calculated, taking into account the solvation effect. The position of Rh-induces defect energy levels have been determined. Our findings indicated a substantial reduction in overpotential for the Rhodium-modified TiO₂ surface compared to the bare surface. The high overpotential on the bare BaTiO₃ surface suggests low OER efficiency, making Rh doping a promising strategy for enhancement.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100382"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Luminescence of bound excitons created near sodium impurity ions in KCl:Na single crystals","authors":"K. Shunkeyev ,&nbsp;А. Kenzhebayeva ,&nbsp;A. Krasnikov ,&nbsp;V. Nagirnyi ,&nbsp;Sh Sagimbayeva ,&nbsp;D. Sergeyev ,&nbsp;А. Tilep ,&nbsp;Zh Ubaev ,&nbsp;A. Lushchik","doi":"10.1016/j.omx.2024.100395","DOIUrl":"10.1016/j.omx.2024.100395","url":null,"abstract":"<div><div>The study is focused on luminescence features of bound excitons (exciton-like formations, ELFs) in KCl:Na single crystals created in the field of sodium impurity ions either directly at photoexcitation or via the recombination of electron-hole pairs. The intensity of the X-ray luminescence (XRL) bands peaked at 2.8 and 3.1 eV (emission of recombinationally formed and relaxed ELFs) increases with both, the concentration of sodium impurity ions (10 → 1000 ppm) and the detection temperature (85 → 350 K). It is worth noting that at room temperature, the light yield of these XRL bands in KCl:Na practically coincides with that for the luminescence measured in the same way in classical scintillators, CsI and CsI:Na crystals. The lifetime of the fast component of cathodoluminescence at 2.8 and 3.1 eV equals 2.4 and 1.7 ns, respectively, at 6 K and even shortens to approximately <em>τ</em> ≈ 0.3 ns at room temperature. At 10 K, photons of 7.6 and 6.7 eV directly form ELFs in the field of single or paired Na⁺ impurity ions with typical luminescence bands peaked, respectively, at 2.8 eV (<span><math><mrow><msubsup><mi>e</mi><mi>l</mi><mn>0</mn></msubsup></mrow></math></span> (Na⁺)) and 3.1 eV (<span><math><mrow><msubsup><mi>e</mi><mi>l</mi><mn>0</mn></msubsup></mrow></math></span> (Na⁺-Na⁺)). These photoluminescence bands undergo complete thermal quenching by 200–300 K, whereas relevant XRL bands are not quenched up to 350 K, their intensity even noticeably increases at 200 → 350 K.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100395"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams","authors":"Zhanymgul Koishybayeva ,&nbsp;Fedor Konusov ,&nbsp;Sergey Pavlov ,&nbsp;Dmitrii Sidelev ,&nbsp;Artur Nassyrbayev ,&nbsp;Ruslan Gadyrov ,&nbsp;Vladislav Tarbokov ,&nbsp;Elena Polisadova ,&nbsp;Abdirash Akilbekov","doi":"10.1016/j.omx.2025.100399","DOIUrl":"10.1016/j.omx.2025.100399","url":null,"abstract":"<div><div>In this work the effect of an intense pulsed ion irradiation with a high flux ∼10²⁰ cm⁻²s⁻¹ on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga₂O₃ phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm², number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100399"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}