Optical Materials: X最新文献_第2页

Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics 铕掺杂Ga₂O₃陶瓷的温度依赖性发光

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100392

Kuat K. Kumarbekov , Askhat B. Kakimov , Zhakyp T. Karipbayev , Murat T. Kassymzhanov , Mikhail G. Brik , Chong-geng Ma , Michał Piasecki , Yana Suchikova , Meldra Kemere , Marina Konuhova

{"title":"Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics","authors":"Kuat K. Kumarbekov , Askhat B. Kakimov , Zhakyp T. Karipbayev , Murat T. Kassymzhanov , Mikhail G. Brik , Chong-geng Ma , Michał Piasecki , Yana Suchikova , Meldra Kemere , Marina Konuhova","doi":"10.1016/j.omx.2024.100392","DOIUrl":"10.1016/j.omx.2024.100392","url":null,"abstract":"<div><div>This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions, notably the 611 nm red emission, show thermal stability, retaining ∼90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100392"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scintillator based nuclear photovoltaic batteries for power generation at microwatts level 用于微瓦级发电的基于闪烁体的核光伏电池

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2025.100401

Ibrahim Oksuz , Sabin Neupane , Yanfa Yan , Lei R. Cao

{"title":"Scintillator based nuclear photovoltaic batteries for power generation at microwatts level","authors":"Ibrahim Oksuz , Sabin Neupane , Yanfa Yan , Lei R. Cao","doi":"10.1016/j.omx.2025.100401","DOIUrl":"10.1016/j.omx.2025.100401","url":null,"abstract":"<div><div>A nuclear photovoltaic battery uses scintillator to convert radiation into visible light, which is then collected by a photovoltaic (PV) cell to generate electricity. If the radiation is gamma-rays emitted from external sources, the battery may also be referred as gammavoltaic battery. In this study, a polycrystalline CdTe solar cell was optically coupled with a 2.0 cm × 2.0 cm × 1.0 cm Gadolinium Aluminum Gallium Garnet (GAGG) scintillator, and the resulting device was tested using intense gamma radiation fields from a Cs-137 (1.5 kRad/h) and a Co-60 (10 kRad/h) irradiator. Measurements with Cs-137 provided a maximum power output (Pmax) of ∼288 nW, with a short-circuit current density (Jsc) of ∼1.22 μA/cm2 and an open-circuit voltage (Voc) of ∼0.34 V. In contrast, Co-60 irradiator gave a Pmax of 1.5 μW, with a Jsc of ∼4.73 μA/cm2 and a Voc of ∼0.38 V. The CdTe was also paired with a Lutetium-Yttrium Oxyorthosilicate (LYSO) crystal and tested with the Cs-137 source. The experiment presents a scalable option to reach to higher power outputs by harvesting gamma radiation fields in many cases where high radiation field demands heavy shielding and is often regarded as unwanted waste.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100401"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Application of EPR spectroscopy method for comparative analysis of structural damage accumulation kinetics in two-phase lithium-containing ceramics 应用 EPR 光谱法比较分析两相含锂陶瓷的结构损伤累积动力学

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100387

Dmitriy I. Shlimas , Daryn B. Borgekov , Artem L. Kozlovskiy

{"title":"Application of EPR spectroscopy method for comparative analysis of structural damage accumulation kinetics in two-phase lithium-containing ceramics","authors":"Dmitriy I. Shlimas , Daryn B. Borgekov , Artem L. Kozlovskiy","doi":"10.1016/j.omx.2024.100387","DOIUrl":"10.1016/j.omx.2024.100387","url":null,"abstract":"<div><div>The aim of this study is to determine the differences in the damaged layer degradation kinetics in two-phase lithium-containing ceramics based on Li2ZrO3 and Li4SiO4 compounds in the case of irradiation with protons and helium ions, simulating the gas swelling and blistering processes, as well as the accumulation of radiolysis products in the damaged layer. During the conducted studies it was established that in the case of proton irradiation, the dominant role at fluences of 1015–1017 cm−2 is played by oxygen vacancies, the change in the concentration of which upon reaching critical values causes a decrease in the thermophysical properties, and disordering of the damaged layer. In this case, the accumulation of radiolysis products in the form of HC2 – and Zr3+ -defects in the structure of the damaged layer is observed at fluences of 5 × 1017 cm−2, while when irradiated with He2+ ions, the formation of these types of HC2 – and Zr3+ -defects is observed at a fluence of 1017 cm−2. Comparison of the concentration dependences of defects in the damaged layer on the atomic displacement value under irradiation with protons and He2+ ions revealed that the formation of oxygen vacancies under irradiation with He2+ ions is more intense than in the case of irradiation with protons, which in turn results in more pronounced processes of accumulation of radiolysis products in the case of high-dose irradiation.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100387"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of short-pulsed Ion irradiation on optical and photoelectrical properties of thin gallium oxide films 短脉冲离子辐照对氧化镓薄膜光学和光电性能的影响

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100394

Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Dmitry Cheshev , Ruslan Gadyrov , Vladislav Tarbokov , Abdirash Akilbekov

{"title":"Influence of short-pulsed Ion irradiation on optical and photoelectrical properties of thin gallium oxide films","authors":"Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Dmitry Cheshev , Ruslan Gadyrov , Vladislav Tarbokov , Abdirash Akilbekov","doi":"10.1016/j.omx.2024.100394","DOIUrl":"10.1016/j.omx.2024.100394","url":null,"abstract":"<div><div>In this work the influence of a short-pulsed ion irradiation with a high flux (∼5.5∙1019 cm−2s−1) on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method. A part of deposited films was annealed in the air environment (900 °C, 2 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the short-pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 90 ns, current density on the target - up to 15 A/cm2). The influence of the annealing and the irradiation on spectral dependences of absorption, the bandgap width and the Urbach energy have been determined. It was found that irradiation leads to amorphization of crystalline β-Ga2O3 films and a significant change in optical characteristics. In addition, we measured the magnitude of surface dark and photoconductivity of the films. Also, the field and spectral dependences of the photosensitivity of the films were researched. As a result, it was established that short-pulsed irradiation improves the photoelectric properties of amorphous gallium oxide films. The reasons of it are discussed.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100394"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of rhodium doping for photocatalytic activity of barium titanate 掺杂铑对钛酸钡光催化活性的影响

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100382

G.A. Kaptagay , B.M. Satanova , A.U. Abuova , M. Konuhova , Zh.Ye. Zakiyeva , U. Zh Tolegen , N.O. Koilyk , F.U. Abuova

引用次数: 0

Phototransferred thermoluminescence of rose quartz: Measurement and analysis 玫瑰石英的光转移热致发光：测量和分析

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100391

M.L. Chithambo , I.A. Ferreira , N.M. Trindade

引用次数: 0

Study of defect formation mechanisms in Li2ZrO3/MgLi2ZrO4 ceramics using EPR spectroscopy 用EPR光谱研究Li2ZrO3/MgLi2ZrO4陶瓷缺陷形成机制

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100396

Dmitriy I. Shlimas , Ainagul A. Khametova , Artem L. Kozlovskiy , Maxim V. Zdorovets

{"title":"Study of defect formation mechanisms in Li2ZrO3/MgLi2ZrO4 ceramics using EPR spectroscopy","authors":"Dmitriy I. Shlimas , Ainagul A. Khametova , Artem L. Kozlovskiy , Maxim V. Zdorovets","doi":"10.1016/j.omx.2024.100396","DOIUrl":"10.1016/j.omx.2024.100396","url":null,"abstract":"<div><div>The article presents the results of experimental studies of the effect of the stabilizing MgO dopant using the electron spin resonance (ESP) method on enhancement of the stability of Li2ZrO3 ceramics to defect formation processes and accumulation of radiolysis products in the near-surface layer in the case of high-dose irradiation with protons simulating the hydrogenation effects characteristic of processes associated with tritium production. During the conducted studies, it was established that the addition of the stabilizing MgO dopant results in formation of inclusions in the form of the tetragonal MgLi2ZrO4 phase, which leads to an increase in the resistance of the near-surface layers to destructive damage due to the accumulation of structural damage (oxygen vacancies and point defects), as well as products of the physicochemical processes of radiolysis, characteristic of high irradiation fluence values. It was found that in the case of unmodified Li2ZrO3 ceramics, the formation of HC2 – centers is observed at a fluence of 1016 proton/cm2, while for two-phase ceramics, the formation of HC2 – centers is observed at higher fluences, while the intensity of the bands is significantly less than in the case of single-phase unmodified ceramics. The difference in the nature of changes in the intensities of singlet bands responsible for the presence of vacancy defects in the damaged layer, as well as HC2 – centers for single-phase and two-phase ceramics is a direct confirmation of the inhibition of structural degradation mechanisms in two-phase ceramics.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100396"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The influence of the conduction band of BaCl2 on the thermal quenching of the Tm2+ 4f125d1→4f13 and 4f13→4f13 luminescence in orthorhombic BaCl2:Tm2+/3+ BaCl2导带对正晶BaCl2:Tm2+/3+中Tm2+ 4f125d1→4f13和4f13→4f13发光热猝灭的影响

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100389

M.P. Plokker, H.T. Hintzen

{"title":"The influence of the conduction band of BaCl2 on the thermal quenching of the Tm2+ 4f125d1→4f13 and 4f13→4f13 luminescence in orthorhombic BaCl2:Tm2+/3+","authors":"M.P. Plokker, H.T. Hintzen","doi":"10.1016/j.omx.2024.100389","DOIUrl":"10.1016/j.omx.2024.100389","url":null,"abstract":"<div><div>The positioning of the Tm2+ 4f125d1 and 4f13 energy levels as relative to the conduction band of the orthorhombic BaCl2 host lattice has been determined. Therefore, the energies of the Tm2+ 4f125d1-and excited 4f13-level were retrieved, as relative to the Tm2+ 4f13 ground state. In addition, the energy for exciton creation in the orthorhombic BaCl2 host lattice was established, from which the bandgap energy was determined. This value was found to correspond quite well to known literature values. Furthermore, the Tm3+-Cl- charge transfer transition was determined, from which the energy difference between the Tm2+ 4f13 ground state and the top of the BaCl2 valence band was deduced. A host referred binding energy scheme deduced for BaCl2:Tm2+ then showed that the lowest energy Tm2+ 4f125d1-levels are positioned 0.3–0.5 eV below the BaCl2 conduction band. Room temperature photo-excitation into this level will then most likely result in thermal ionization effects that have an impact on the Tm2+ 4f125d1→4f13 and 4f13→4f13 luminescence and corresponding quantum yield.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100389"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Luminescence of bound excitons created near sodium impurity ions in KCl:Na single crystals KCl:Na单晶中钠杂质离子附近产生的束缚激子的发光

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100395

K. Shunkeyev , А. Kenzhebayeva , A. Krasnikov , V. Nagirnyi , Sh Sagimbayeva , D. Sergeyev , А. Tilep , Zh Ubaev , A. Lushchik

{"title":"Luminescence of bound excitons created near sodium impurity ions in KCl:Na single crystals","authors":"K. Shunkeyev , А. Kenzhebayeva , A. Krasnikov , V. Nagirnyi , Sh Sagimbayeva , D. Sergeyev , А. Tilep , Zh Ubaev , A. Lushchik","doi":"10.1016/j.omx.2024.100395","DOIUrl":"10.1016/j.omx.2024.100395","url":null,"abstract":"<div><div>The study is focused on luminescence features of bound excitons (exciton-like formations, ELFs) in KCl:Na single crystals created in the field of sodium impurity ions either directly at photoexcitation or via the recombination of electron-hole pairs. The intensity of the X-ray luminescence (XRL) bands peaked at 2.8 and 3.1 eV (emission of recombinationally formed and relaxed ELFs) increases with both, the concentration of sodium impurity ions (10 → 1000 ppm) and the detection temperature (85 → 350 K). It is worth noting that at room temperature, the light yield of these XRL bands in KCl:Na practically coincides with that for the luminescence measured in the same way in classical scintillators, CsI and CsI:Na crystals. The lifetime of the fast component of cathodoluminescence at 2.8 and 3.1 eV equals 2.4 and 1.7 ns, respectively, at 6 K and even shortens to approximately τ ≈ 0.3 ns at room temperature. At 10 K, photons of 7.6 and 6.7 eV directly form ELFs in the field of single or paired Na+ impurity ions with typical luminescence bands peaked, respectively, at 2.8 eV (<math><mrow><msubsup><mi>e</mi><mi>l</mi><mn>0</mn></msubsup></mrow></math> (Na+)) and 3.1 eV (<math><mrow><msubsup><mi>e</mi><mi>l</mi><mn>0</mn></msubsup></mrow></math> (Na+-Na+)). These photoluminescence bands undergo complete thermal quenching by 200–300 K, whereas relevant XRL bands are not quenched up to 350 K, their intensity even noticeably increases at 200 → 350 K.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100395"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams 强脉冲200kev C+离子束对氧化镓薄膜光学和光电性能的影响

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2025.100399

Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Ruslan Gadyrov , Vladislav Tarbokov , Elena Polisadova , Abdirash Akilbekov

{"title":"Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams","authors":"Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Ruslan Gadyrov , Vladislav Tarbokov , Elena Polisadova , Abdirash Akilbekov","doi":"10.1016/j.omx.2025.100399","DOIUrl":"10.1016/j.omx.2025.100399","url":null,"abstract":"<div><div>In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100399"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0