Optical Materials: X最新文献_第3页

Effect of rhodium doping for photocatalytic activity of barium titanate 掺杂铑对钛酸钡光催化活性的影响

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100382

G.A. Kaptagay , B.M. Satanova , A.U. Abuova , M. Konuhova , Zh.Ye. Zakiyeva , U. Zh Tolegen , N.O. Koilyk , F.U. Abuova

引用次数: 0

Luminescence of bound excitons created near sodium impurity ions in KCl:Na single crystals KCl:Na单晶中钠杂质离子附近产生的束缚激子的发光

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100395

K. Shunkeyev , А. Kenzhebayeva , A. Krasnikov , V. Nagirnyi , Sh Sagimbayeva , D. Sergeyev , А. Tilep , Zh Ubaev , A. Lushchik

{"title":"Luminescence of bound excitons created near sodium impurity ions in KCl:Na single crystals","authors":"K. Shunkeyev , А. Kenzhebayeva , A. Krasnikov , V. Nagirnyi , Sh Sagimbayeva , D. Sergeyev , А. Tilep , Zh Ubaev , A. Lushchik","doi":"10.1016/j.omx.2024.100395","DOIUrl":"10.1016/j.omx.2024.100395","url":null,"abstract":"<div><div>The study is focused on luminescence features of bound excitons (exciton-like formations, ELFs) in KCl:Na single crystals created in the field of sodium impurity ions either directly at photoexcitation or via the recombination of electron-hole pairs. The intensity of the X-ray luminescence (XRL) bands peaked at 2.8 and 3.1 eV (emission of recombinationally formed and relaxed ELFs) increases with both, the concentration of sodium impurity ions (10 → 1000 ppm) and the detection temperature (85 → 350 K). It is worth noting that at room temperature, the light yield of these XRL bands in KCl:Na practically coincides with that for the luminescence measured in the same way in classical scintillators, CsI and CsI:Na crystals. The lifetime of the fast component of cathodoluminescence at 2.8 and 3.1 eV equals 2.4 and 1.7 ns, respectively, at 6 K and even shortens to approximately τ ≈ 0.3 ns at room temperature. At 10 K, photons of 7.6 and 6.7 eV directly form ELFs in the field of single or paired Na+ impurity ions with typical luminescence bands peaked, respectively, at 2.8 eV (<math><mrow><msubsup><mi>e</mi><mi>l</mi><mn>0</mn></msubsup></mrow></math> (Na+)) and 3.1 eV (<math><mrow><msubsup><mi>e</mi><mi>l</mi><mn>0</mn></msubsup></mrow></math> (Na+-Na+)). These photoluminescence bands undergo complete thermal quenching by 200–300 K, whereas relevant XRL bands are not quenched up to 350 K, their intensity even noticeably increases at 200 → 350 K.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100395"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams 强脉冲200kev C+离子束对氧化镓薄膜光学和光电性能的影响

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2025.100399

Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Ruslan Gadyrov , Vladislav Tarbokov , Elena Polisadova , Abdirash Akilbekov

{"title":"Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams","authors":"Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Ruslan Gadyrov , Vladislav Tarbokov , Elena Polisadova , Abdirash Akilbekov","doi":"10.1016/j.omx.2025.100399","DOIUrl":"10.1016/j.omx.2025.100399","url":null,"abstract":"<div><div>In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100399"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy 通过泵探吸收光谱研究 Gd3Ga5O12:Ce 和 Gd3Al1Ga4O12:Ce 晶体中 Ce3+ 5d1 电平、导带底层和浅电子陷阱电平之间的关系

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100398

Mamoru Kitaura , Heishun Zen , Shinta Watanabe , Hirokazu Masai , Kei Kamada , Kyoung-Jin Kim , Akira Yoshikawa , Jumpei Ueda

{"title":"Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy","authors":"Mamoru Kitaura , Heishun Zen , Shinta Watanabe , Hirokazu Masai , Kei Kamada , Kyoung-Jin Kim , Akira Yoshikawa , Jumpei Ueda","doi":"10.1016/j.omx.2024.100398","DOIUrl":"10.1016/j.omx.2024.100398","url":null,"abstract":"<div><div>Ce3+-doped compounds are typically the preferred materials for the development of inorganic phosphors for white LEDs, displays, and scintillators. In this study, pump-probe absorption spectroscopy was performed for Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals using ultraviolet (UV) and visible (VIS) pump light, and infrared (IR) probe light. A change in the IR-absorption was observed owing to the generation of free carrier plasma via photoexcitation. Through a simple analysis, the excitation spectra of this change determined the energy at the bottom of the conduction band relative to that at the Ce3+ 4f level. The transient response of the IR-absorption change suggested different relaxation processes for excited electrons in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce. Analysis of the thermally stimulated luminescence (TSL) glow curve determined the trap depth of the electrons in Gd3Al1Ga4O12:Ce. Based on positron annihilation lifetime spectroscopy (PALS), the generation of electron traps was linked to the introduction of vacancy complexes or vacancy aggregates with a negative charge, namely nonstoichiometric compositions. This helps achieve high-quality Ce3+-doped multicomponent oxides.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100398"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Luminescence properties of ZnSe single crystals co-doped with Fe and Cr 掺杂铁和铬的 ZnSe 单晶的发光特性

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100393

K. Lamonova , A. Prokhorov , M. Schmidbauer , A. Kwasniewski , Yu Kazarinov , M. Konuhova , A. Platonenko , Z. Remeš , K. Ridzoňová , M. Buryi

引用次数: 0

Phototransferred thermoluminescence of rose quartz: Measurement and analysis 玫瑰石英的光转移热致发光：测量和分析

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100391

M.L. Chithambo , I.A. Ferreira , N.M. Trindade

引用次数: 0

Study of defect formation mechanisms in Li2ZrO3/MgLi2ZrO4 ceramics using EPR spectroscopy 用EPR光谱研究Li2ZrO3/MgLi2ZrO4陶瓷缺陷形成机制

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100396

Dmitriy I. Shlimas , Ainagul A. Khametova , Artem L. Kozlovskiy , Maxim V. Zdorovets

{"title":"Study of defect formation mechanisms in Li2ZrO3/MgLi2ZrO4 ceramics using EPR spectroscopy","authors":"Dmitriy I. Shlimas , Ainagul A. Khametova , Artem L. Kozlovskiy , Maxim V. Zdorovets","doi":"10.1016/j.omx.2024.100396","DOIUrl":"10.1016/j.omx.2024.100396","url":null,"abstract":"<div><div>The article presents the results of experimental studies of the effect of the stabilizing MgO dopant using the electron spin resonance (ESP) method on enhancement of the stability of Li2ZrO3 ceramics to defect formation processes and accumulation of radiolysis products in the near-surface layer in the case of high-dose irradiation with protons simulating the hydrogenation effects characteristic of processes associated with tritium production. During the conducted studies, it was established that the addition of the stabilizing MgO dopant results in formation of inclusions in the form of the tetragonal MgLi2ZrO4 phase, which leads to an increase in the resistance of the near-surface layers to destructive damage due to the accumulation of structural damage (oxygen vacancies and point defects), as well as products of the physicochemical processes of radiolysis, characteristic of high irradiation fluence values. It was found that in the case of unmodified Li2ZrO3 ceramics, the formation of HC2 – centers is observed at a fluence of 1016 proton/cm2, while for two-phase ceramics, the formation of HC2 – centers is observed at higher fluences, while the intensity of the bands is significantly less than in the case of single-phase unmodified ceramics. The difference in the nature of changes in the intensities of singlet bands responsible for the presence of vacancy defects in the damaged layer, as well as HC2 – centers for single-phase and two-phase ceramics is a direct confirmation of the inhibition of structural degradation mechanisms in two-phase ceramics.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100396"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The influence of the conduction band of BaCl2 on the thermal quenching of the Tm2+ 4f125d1→4f13 and 4f13→4f13 luminescence in orthorhombic BaCl2:Tm2+/3+ BaCl2导带对正晶BaCl2:Tm2+/3+中Tm2+ 4f125d1→4f13和4f13→4f13发光热猝灭的影响

Optical Materials: X Pub Date : 2025-02-01 DOI: 10.1016/j.omx.2024.100389

M.P. Plokker, H.T. Hintzen

{"title":"The influence of the conduction band of BaCl2 on the thermal quenching of the Tm2+ 4f125d1→4f13 and 4f13→4f13 luminescence in orthorhombic BaCl2:Tm2+/3+","authors":"M.P. Plokker, H.T. Hintzen","doi":"10.1016/j.omx.2024.100389","DOIUrl":"10.1016/j.omx.2024.100389","url":null,"abstract":"<div><div>The positioning of the Tm2+ 4f125d1 and 4f13 energy levels as relative to the conduction band of the orthorhombic BaCl2 host lattice has been determined. Therefore, the energies of the Tm2+ 4f125d1-and excited 4f13-level were retrieved, as relative to the Tm2+ 4f13 ground state. In addition, the energy for exciton creation in the orthorhombic BaCl2 host lattice was established, from which the bandgap energy was determined. This value was found to correspond quite well to known literature values. Furthermore, the Tm3+-Cl- charge transfer transition was determined, from which the energy difference between the Tm2+ 4f13 ground state and the top of the BaCl2 valence band was deduced. A host referred binding energy scheme deduced for BaCl2:Tm2+ then showed that the lowest energy Tm2+ 4f125d1-levels are positioned 0.3–0.5 eV below the BaCl2 conduction band. Room temperature photo-excitation into this level will then most likely result in thermal ionization effects that have an impact on the Tm2+ 4f125d1→4f13 and 4f13→4f13 luminescence and corresponding quantum yield.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100389"},"PeriodicalIF":0.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143181703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preface to the special issue after ESTE 2023 conference ESTE 2023会议后特刊序

Optical Materials: X Pub Date : 2024-12-01 DOI: 10.1016/j.omx.2024.100379

Dariusz Hreniak , Mariusz Stefański , Wiesław Stręk , Rober Tomala , Eugeniusz Zych

引用次数: 0

Luminescence of copper-doped α-quartz crystal after oxygen treatment 氧处理后掺铜 α-石英晶体的发光特性

Optical Materials: X Pub Date : 2024-11-23 DOI: 10.1016/j.omx.2024.100381

A. Trukhin

{"title":"Luminescence of copper-doped α-quartz crystal after oxygen treatment","authors":"A. Trukhin","doi":"10.1016/j.omx.2024.100381","DOIUrl":"10.1016/j.omx.2024.100381","url":null,"abstract":"<div><div>Treatment of copper-doped natural α-quartz in oxygen atmosphere at 1200 °C leads to changes in luminescence properties. The luminescence center of AlO4−-Cu+ is modified. The intensity is low in the annealed sample and increases after X-ray irradiation at 293 K. Annealing of the irradiated sample leads to a strong peak of thermally stimulated luminescence (TSL) at ∼500 K. Its spectral composition is mainly due to the AlO4−-Cu+ center. Irradiation of the sample treated with oxygen at 77 K gives a new TSL peak at ∼180 K and a peak at 244 K existing in the untreated sample. Both peaks were attributed to Cuo centers released from different sites and recombined with a hole in AlO4 having additional oxygen. The introduction of copper ions into quartz removes alkali metal ions and eliminates the corresponding luminescence, but after treatment in oxygen, luminescence with similar parameters is restored at low temperatures. In this case, only the glow of the AlO4−-Cu+ center is observed in the recombination luminescence (TSL and afterglow). Therefore, modification of the AlO4−-Cu + center with oxygen imparts to this center properties similar to the complex center AlO4− (K, Na or Li ion) with monovalent aluminum ions, although the alkali ions are replaced by copper ions. The oxygen-treated sample exhibits an increased efficiency of energy transfer by excitons to the luminescence center, measured as excitation spectra in the region of fundamental absorption of silicon dioxide. The X-ray excitation of the self-trapped exciton luminescence does not depend on oxygen treatment. Also, the spectra of intrinsic optical reflection and Raman scattering do not change compared to the untreated sample. The obtained result is interpreted as a modification of the defect by high-temperature treatment in oxygen.</div></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":"25 ","pages":"Article 100381"},"PeriodicalIF":0.0,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142720223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0