强脉冲200kev C+离子束对氧化镓薄膜光学和光电性能的影响

Q2 Engineering

Optical Materials: X Pub Date : 2025-02-01 DOI:10.1016/j.omx.2025.100399

Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Ruslan Gadyrov , Vladislav Tarbokov , Elena Polisadova , Abdirash Akilbekov

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引用次数: 0

摘要

本文研究了高通量~ 1020 cm−2s−1强脉冲离子辐照对氧化镓薄膜结构、光学和光电性能的影响。薄膜采用射频磁控溅射法制备，具有非晶结构。将部分沉积膜在空气环境中（900℃，1 h）退火，合成β-Ga2O3相。将获得的薄膜进行强脉冲离子辐照（离子能量高达200 keV，脉冲持续时间为100 ns，靶上的电流密度高达30 A/cm2，脉冲数为3）。研究了辐照对光吸收和光致发光光谱、暗和光电导率的场和温度依赖性的影响。讨论了生长缺陷的可能性质，并提出了一种决定光学性质的电子跃迁方案。

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Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams

In this work the effect of an intense pulsed ion irradiation with a high flux ∼10²⁰ cm⁻²s⁻¹ on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga₂O₃ phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm², number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.

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来源期刊

Optical Materials: X Engineering-Electrical and Electronic Engineering

CiteScore

3.30

自引率

0.00%

发文量

审稿时长

91 days