Influence of short-pulsed Ion irradiation on optical and photoelectrical properties of thin gallium oxide films

Q2 Engineering

Optical Materials: X Pub Date : 2025-02-01 DOI:10.1016/j.omx.2024.100394

Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Dmitry Cheshev , Ruslan Gadyrov , Vladislav Tarbokov , Abdirash Akilbekov

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Abstract

In this work the influence of a short-pulsed ion irradiation with a high flux (∼5.5∙10¹⁹ cm⁻²s⁻¹) on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method. A part of deposited films was annealed in the air environment (900 °C, 2 h) for synthesis of β-Ga₂O₃ phase. Obtained films were subjected to the short-pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 90 ns, current density on the target - up to 15 A/cm²). The influence of the annealing and the irradiation on spectral dependences of absorption, the bandgap width and the Urbach energy have been determined. It was found that irradiation leads to amorphization of crystalline β-Ga₂O₃ films and a significant change in optical characteristics. In addition, we measured the magnitude of surface dark and photoconductivity of the films. Also, the field and spectral dependences of the photosensitivity of the films were researched. As a result, it was established that short-pulsed irradiation improves the photoelectric properties of amorphous gallium oxide films. The reasons of it are discussed.

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短脉冲离子辐照对氧化镓薄膜光学和光电性能的影响

本文研究了高通量（~ 5.5∙1019 cm−2s−1）短脉冲离子辐照对氧化镓薄膜结构、光学和光电性能的影响。采用射频磁控溅射法制备薄膜。将部分沉积膜在空气环境中（900℃，2 h）退火，合成β-Ga2O3相。得到的薄膜进行短脉冲离子辐照（离子能量高达200 keV，脉冲持续时间为90 ns，靶上的电流密度高达15 A/cm2）。测定了退火和辐照对吸收光谱依赖性、带隙宽度和乌尔巴赫能的影响。结果表明，辐照导致β-Ga2O3晶体薄膜非晶化，光学特性发生显著变化。此外，我们还测量了薄膜的表面暗度和光电导率。此外，还研究了薄膜光敏性的场和光谱依赖性。结果表明，短脉冲辐照能提高非晶氧化镓薄膜的光电性能。讨论了其原因。

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