Surface mechanics of GaAsP/GaAs epilayers for non-linear optical devices

Q2 Engineering

Optical Materials: X Pub Date : 2025-07-01 DOI:10.1016/j.omx.2025.100420

Samuel M. Linser , Shivashankar R. Vangala , Harris J. Hall , Duane Brinegar , Timothy A. Prusnick , Vladimir L. Tassev

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Abstract

We report on nanoindentation measurements of hydride vapor phase epitaxy (HVPE) grown Gallium Arsenide Phosphide (GaAs_1-xP_x) epilayers, of interest for generation of mid-infrared wavelengths via frequency conversion. Our results indicate a linear trend in Young's modulus with increasing phosphorus content (P-content), in keeping with Vegard's Law for ternary compounds. The corresponding data for hardness demonstrate significant bowing with a peak of 10.7 GPa occurring at 78 % P-content. Some epilayers exhibit non-negligible spatial variation in their mechanical properties, which is investigated with complementary measurements. Photoluminescence measurements indicate high composition uniformity, while atomic force microscopy reveals a direct correlation between surface roughness and mechanical variability. Preliminary laser-induced damage threshold (LIDT) results are reported, and the implications for material optimization are discussed. With a 1070-nm continuous wave laser, GaAs_0.75P_0.25 and GaAs_0.52P_0.48 epilayers demonstrated LID thresholds of 600 kW/cm² and 300 kW/cm², respectively.

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非线性光学器件用GaAsP/GaAs薄膜的表面力学研究

我们报道了氢化物气相外延（HVPE）生长的砷化磷化镓（GaAs1-xPx）薄膜的纳米压痕测量，对通过频率转换产生中红外波长感兴趣。我们的结果表明，杨氏模量随磷含量的增加呈线性趋势，符合三元化合物的维加德定律。相应的硬度数据显示出明显的弯曲，当p含量为78%时，峰值为10.7 GPa。一些脱毛层表现出不可忽略的空间变化在他们的机械性能，这是研究与补充测量。光致发光测量表明高组成均匀性，而原子力显微镜揭示了表面粗糙度和机械变异性之间的直接关系。本文报道了激光诱导损伤阈值（LIDT）的初步结果，并讨论了材料优化的意义。在1070 nm连续波激光下，GaAs0.75P0.25和GaAs0.52P0.48薄膜的LID阈值分别为600 kW/cm2和300 kW/cm2。

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