Zhongxian Zheng , Jianxing Li , Jitao Chen , Yi Song , Zeting Li , Kai-Da Xu
{"title":"A filtering power divider with high selectivity based on surface acoustic wave resonator","authors":"Zhongxian Zheng , Jianxing Li , Jitao Chen , Yi Song , Zeting Li , Kai-Da Xu","doi":"10.1016/j.aeue.2025.156025","DOIUrl":"10.1016/j.aeue.2025.156025","url":null,"abstract":"<div><div>In this paper, a novel filtering power divider (FPD) based on surface acoustic wave (SAW) resonators is proposed. The proposed FPD integrates the functions of a SAW resonator filtering structure and a power divider, providing highly selective filtering response at two output ports. Microstrip transmission lines, inductors, and SAW resonators are integrated to form the filtering structure that functionally substitutes the quarter-wavelength microstrip line in the traditional Wilkinson power divider. Owing to the symmetry of the circuit topology structure, odd- and even-mode methods are used for analysis. To validate the proposed technique, a high-selectivity FPD based on SAW resonators is designed and fabricated. Measurement results demonstrate an operating bandwidth (return loss > 15 dB) of 989.6–1006.5 MHz with a minimal insertion loss of 1.4 dB. Across the entire passband, the output port isolation exceeds 21 dB, and the shape factor (BW<sub>3dB</sub>/BW<sub>10dB</sub>) is 0.81. The FPD owns advantages of high frequency selectivity and good isolation.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156025"},"PeriodicalIF":3.2,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Third-order single-T and bridged-T LC oscillators and application","authors":"B.J. Maundy , A.S. Elwakil , A.A. Nutfaji","doi":"10.1016/j.aeue.2025.155992","DOIUrl":"10.1016/j.aeue.2025.155992","url":null,"abstract":"<div><div>In this letter, we propose novel single-T and bridged-T <span><math><mrow><mi>L</mi><mi>C</mi></mrow></math></span> sinusoidal oscillators. These oscillators can be built either using a single operational amplifier or using a single transistor. The advantage of these oscillators is that they require close to a unity start-up gain and that they can be realized using a single-transistor which is advantageous. An application in realizing a wireless power transmitter using inductive coupling is constructed and experimentally verified based on one of the proposed oscillators.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 155992"},"PeriodicalIF":3.2,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145005230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yi Zheng , Zhenjie Yan , Rui Yang , Binhan Zhang , Zhicong Luo , Jinghu Li
{"title":"A -122 dB PSRR curvature-compensated bandgap reference with cross-connected NPN","authors":"Yi Zheng , Zhenjie Yan , Rui Yang , Binhan Zhang , Zhicong Luo , Jinghu Li","doi":"10.1016/j.aeue.2025.156005","DOIUrl":"10.1016/j.aeue.2025.156005","url":null,"abstract":"<div><div>A cross-connected NPN bandgap reference (BGR) circuit with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed by using curvature-compensated and pre-regulation techniques. Compared with the traditional BGR, it does not require an operational amplifier to clamp the voltage, but uses the voltage feedback of the cross-connected NPN to clamp the voltage, making the structure simpler and eliminating the need to design an operational amplifier. Additionally, by subtracting two nearly identical positive-temperature-coefficient currents, the circuit generates a new current with enhanced curvature, which is then used as a compensating current to reduce the overall temperature coefficient. This compensating current is subsequently scaled by different gain factors to accommodate process-corner variations and serve as a trimming current. Meanwhile, the pre-regulation circuit is respectively adopted to improve PSRR. The proposed BGR circuit is implemented in a 180-nm process, boasting a minimal active area of 0.016 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>. Simulation results show that the BGR has a best TC of 4.13 ppm/<span><math><mrow><msup><mrow></mrow><mrow><mo>°</mo></mrow></msup><mi>C</mi></mrow></math></span> from −40 °C to 125 °C at 3.3 V, a PSRR of −122 dB at low frequencies, and a linear regulation (LR) of 0.0027 mV/V within the supply voltage range of 3.0 V to 3.6 V.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156005"},"PeriodicalIF":3.2,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145005227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A modified harmonic minimization scheme for seven-level CHB multilevel inverter with improved voltage harmonic profile and grid code satisfaction","authors":"Samudra Panda , Sourabh Kundu , Subrata Banerjee","doi":"10.1016/j.aeue.2025.156024","DOIUrl":"10.1016/j.aeue.2025.156024","url":null,"abstract":"<div><div>In this study a modified selective-harmonic-minimization pulse-amplitude-modulation (SHM PAM) scheme is proposed for a 7-level cascaded H-bridge (CHB) multilevel inverter (MLI). The proposed scheme minimizes various lower order harmonics of inverter line voltage, with automatic elimination of the 5th & its higher odd order harmonic components. The modified modulation scheme successfully satisfies six key grid code standards using a 7-level phase voltage waveform, designed based on the proposed angular constraint. The cost function, used to determine the optimized switching angles and per-unit voltages of the proposed voltage pattern, is formulated with a comparatively small number of variables; thereby simplifying and accelerating the overall computational process. This feature facilitates the seamless implementation of the proposed scheme in real-time scenarios. The applicability of the proposed scheme is validated through MATLAB-simulation studies & experimental tests on a 3-phase 7-level CHB MLI laboratory setup under various resistive & inductive loading conditions. Finally, the effectiveness of the proposed scheme is assessed through a comparative study with existing works, considering the number of optimization variables, the number of switching angles, and compliance with grid code standards.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156024"},"PeriodicalIF":3.2,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A parallelized SIW microwave cavity resonator for compact high-Q low phase noise VCOs in 5G and GNSS applications","authors":"Mehran Bakhshi , Seyyed Ali Tabatabaei , Masoud Mollaee , Seyyed Hamed Ayatollahi","doi":"10.1016/j.aeue.2025.156019","DOIUrl":"10.1016/j.aeue.2025.156019","url":null,"abstract":"<div><div>This paper presents a novel method to enhance the quality factor of a simple square resonator designed using Substrate Integrated Waveguide (SIW) technology, while maintaining cost-efficiency and compactness. Our approach leverages parallelized microwave cavities suitable for high-frequency, low phase noise Voltage-Controlled Oscillators (VCOs) used in fifth generation (5G) and Global Navigation Satellite System (GNSS) applications. Modern communication and navigation systems demand precise frequency and timing systems featuring low phase noise performance, compact size, and cost-efficiency. To reduce the need for high manufacturing precision, we incorporated tuning capability into our microwave resonator without compromising performance characteristics. The proposed resonator achieves a competitive loaded quality factor of approximately 150 at 6.8 GHz, with an insertion loss of about 5.5 dB. Its occupied area is about <span><math><mrow><mn>0</mn><mo>.</mo><mn>4</mn><mo>×</mo><mn>0</mn><mo>.</mo><mn>4</mn><mspace></mspace><mrow><mo>(</mo><msub><mrow><mi>λ</mi></mrow><mrow><mn>0</mn></mrow></msub><mo>×</mo><msub><mrow><mi>λ</mi></mrow><mrow><mn>0</mn></mrow></msub><mo>)</mo></mrow></mrow></math></span>, which is an appealing feature for high-frequency applications. Our method enables improved quality factor through increasing the number of resonating microwave layers within the same occupied area. The central resonance frequency can be adjusted via a DC-biasing circuit that controls a varactor capacitor, providing a tuning range of 250 MHz.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156019"},"PeriodicalIF":3.2,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144996577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A topology optimization method for designing dielectric microstructures in low-profile and lightweight phased antennas with enhanced scanning capabilities","authors":"Mingyue Zhang , Junwei Zhang , Renjing Gao","doi":"10.1016/j.aeue.2025.156022","DOIUrl":"10.1016/j.aeue.2025.156022","url":null,"abstract":"<div><div>Stacked phased array antennas play a vital role in modern radar and communication systems due to their capability for wideband and wide-angle beam scanning. However, their application is limited by the fixed dielectric properties of conventional substrates, which restrict bandwidth, scanning performance, and miniaturization. To address this critical challenge, this paper proposes a novel design method that combines topology optimization with 3D printing to generate substrate microstructures with customized dielectric properties. The proposed method includes (1) performance-driven optimization to determine the desired dielectric properties and (2) a topology optimization method based on scattering parameter inversion to realize these properties in manufacturable dielectric structures. A stacked phased array antenna operating in the X-band (8–12 GHz) is designed and fabricated to validate the proposed method. The designed antenna achieves a VSWR < 2 impedance-matching bandwidth covering 8–12 GHz in the normal direction, and maintains VSWR < 2.5 across the same frequency range when scanning up to ± 45° in both the E- and H-planes. In addition, the designed antenna reduces overall weight by 27.5 % while maintaining a low profile of only 8.624 mm. This paper demonstrates a promising pathway to enable the next generation of low-profile, lightweight, and high-performance phased array antennas.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156022"},"PeriodicalIF":3.2,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A compact frequency-reconfigurable magneto-electric dipole antenna with aperture-coupled excitation for 5G and ISM/WLAN applications","authors":"Fatemeh Kazemi, Changiz Ghobadi, Javad Nourinia, Majid Shokri","doi":"10.1016/j.aeue.2025.156020","DOIUrl":"10.1016/j.aeue.2025.156020","url":null,"abstract":"<div><div>This paper presents a compact, frequency-reconfigurable magneto-electric dipole (MED) antenna with aperture-coupled excitation for 5G (n77, n78, n79) and ISM/WLAN (2.4 GHz) applications. At a 1 mm-thick FR4 substrate, the design achieves a better than 85% efficiency and a footprint of 60 × 60 × 12 mm<sup>3</sup>. Three PIN diodes are used in this study, which makes it dynamically tunable across 4 modes of operation, giving a broadband impedance range of 2.30–5.50 GHz with good pair isolation of 20 dB. Optimized phases in the design lead to better performance with gains varying between 6.70 and 7.05 dBi and better stability. Its cost-effective modularity makes this antenna more appropriate than other non-reconfigurable alternatives for deployment in the advanced networks such as 5G, IoT, and automotive communications.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156020"},"PeriodicalIF":3.2,"publicationDate":"2025-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144996576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 0.05–20 GHz ultra-wideband CMOS circulator with differential compensation transistors and differential delay lines","authors":"Zhengyang Li , Youming Zhang , Fengyi Huang","doi":"10.1016/j.aeue.2025.156015","DOIUrl":"10.1016/j.aeue.2025.156015","url":null,"abstract":"<div><div>An ultra-wideband circulator with high TX-to-RX isolation based on an improved structure of sequentially switched delay lines (SSDL) is presented. Novel differential compensation transistors (DCTs) are introduced to cancel the TX signal leakage through the parasitic capacitors of the main switches. To optimize the TX-to-RX isolation over a large bandwidth, a differential delay line (DDL) based on delay compensation technique is proposed to achieve a large delay-bandwidth product (DBW) and a low delay variation (DV). The circulator circuit is implemented in a 40-nm CMOS process with excellent TX-to-RX isolation and a bandwidth substantially larger than the previously reported results, while other performances are comparable to the prior arts. The circulator circuit achieves >24 dB TX-to-RX isolation over the frequency band of 0.05–20 GHz. The TX-to-ANT and ANT-to-RX losses are 4.2–8.3 dB and 4.2–8.7 dB. The circulator exhibits a high TX-induced ANT-RX compression of 10.1–16.8 dBm across the frequency band. The measured input power 1-dB compression points (IP1dB) for TX-to-ANT and ANT-to-RX are 2.1–8.3 dBm and 2.4–7.3 dBm, respectively, with the corresponding input third-order intercept points (IIP3) of 15.6–22.1 dBm and 15.4–22.4 dBm.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156015"},"PeriodicalIF":3.2,"publicationDate":"2025-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144997629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Antenna integrated novel metasurface for simultaneous wireless information and power transfer","authors":"R. Aneesh Kumar , R. Sethunadh , Chinmoy Saha","doi":"10.1016/j.aeue.2025.156018","DOIUrl":"10.1016/j.aeue.2025.156018","url":null,"abstract":"<div><div>Simultaneous wireless information and power transfer (SWIPT) has recently gained significant attention as promising technology for Internet of Things (IoT). SWIPT enables autonomous IoT nodes with simultaneous energy harvesting (EH) and information transfer (IT) capabilities. For implementation in current compact IoT nodes, the SWIPT system should allow maximum integration of EH and IT chains in small footprint. Proposed work caters to such requirement by establishing planar integration of antenna with metasurface for SWIPT, where metasurface and antenna caters to the EH and IT chain respectively, with high isolation between them. A miniaturized rectifier smaller than the size of the metasurface unit cell is also demonstrated in this work, which allows easy implementation of EH chain. A parasitic slot radiator loaded patch is proposed as antenna element for IT chain, which provides near omni-directional radiation pattern with high gain. The design of the proposed work is carried out at 2.45 GHz frequency. The metasurface is demonstrated in experiment with radiation to AC conversion efficiency close to 90 %, whereas, miniaturized rectifier provides more than 40% rectification efficiency at power as low as -10 dBm. Antenna for IT chain demonstrates peak gain of 7 dBi in experiment with near omni-directional radiation pattern.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156018"},"PeriodicalIF":3.2,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A radiation hardened In-memory computing SRAM for soft error tolerance in safety critical applications","authors":"Biby Joseph, R.K. Kavitha","doi":"10.1016/j.aeue.2025.156017","DOIUrl":"10.1016/j.aeue.2025.156017","url":null,"abstract":"<div><div>In this paper, a radiation-hardened, soft error tolerant 14T SRAM cell (RHBD-IMC14T) featuring in memory computing (IMC) with enhanced reliability is proposed. It has only three sensitive nodes and a separate read path which improves read stability, making the design suitable for IMC operations. It is able to perform OR/NOR, AND/NAND, XOR/XNOR operations, binary content addressable memory (BCAM), and ternary content addressable memory (TCAM) searches efficiently. All the performance comparisons are done in UMC 65 nm technology at 1.2 V, and it achieves 1.2<span><math><mo>×</mo></math></span> , 1.2<span><math><mo>×</mo></math></span> , 1.1<span><math><mo>×</mo></math></span> 1.9<span><math><mo>×</mo></math></span> times higher write stability and 1.2<span><math><mo>×</mo></math></span> , 1.2<span><math><mo>×</mo></math></span> , 6.6<span><math><mo>×</mo></math></span> , 1.4<span><math><mo>×</mo></math></span> times lower power dissipation compared to DICE12T, QUCCE12T, RHSC12T, and RHBD13T, respectively. It also shows a 65% reduction in single event upset probability (P<span><math><msub><mrow></mrow><mrow><mi>S</mi></mrow></msub></math></span>) over DICE12T. The logic operations are performed at 12.52 GHz with an energy consumption of 6.72 fJ/bit. The BCAM and TCAM operations achieve energy efficiencies of 53.53 fJ/bit/search and 51.98 fJ/bit/search at frequencies of 4.06 GHz and 4.26 GHz, respectively. RHBD-IMC14T has critical charge of Qc <span><math><mo>></mo></math></span> 34 fC, ensuring soft error resilience. This work represents one of the earliest efforts to integrate RHBD techniques into IMC capable SRAMs, with robust and energy efficient memory computing for safety critical applications.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156017"},"PeriodicalIF":3.2,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145005226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}