{"title":"Exhibiting the superiority of metal-filled SSPP in advanced output matching networks for high-performance power amplifier","authors":"Hemant Kumari, Amartya Paul, Wanchi Sangma, Shubhankar Majumdar","doi":"10.1016/j.aeue.2025.156016","DOIUrl":"10.1016/j.aeue.2025.156016","url":null,"abstract":"<div><div>This paper presents the design and optimization of a high-efficiency power amplifier (PA) utilizing spoof surface plasmon polaritons (SSPPs) at 2.4 GHz for enhanced impedance matching in microwave applications. Surface plasmon polaritons (SPPs), arising from the interaction between electromagnetic waves and free electrons at the metal–dielectric interface, are emulated in the microwave domain using SSPPs. These structures enable strong field confinement, compactness, and improved signal integrity. However, efficient amplification of high-power plasmonic signals in a reduced footprint remains a key challenge. To address this, Gallium Nitride (GaN) HEMT technology is employed. Three SSPP lines are integrated into the output matching network (OMN), where structural modifications: air-filled and metal-filled apertures, are introduced. Comparative measurements indicate that the classical PA achieved 38.99 dBm output power, 13 dB gain, 53.7% efficiency, -68 dBc adjacent channel power ratio (ACPR), and 25.5 dBc <span><math><mrow><mi>C</mi><mo>/</mo><mi>I</mi></mrow></math></span>. Incorporating air-filled apertures led to 7.14% and 4.26% improvements in output power and efficiency, respectively. Metal-filled apertures further enhanced output power by 13.71% and efficiency by 13.83%, while improving ACPR and carrier-to-interference ratio (<span><math><mrow><mi>C</mi><mo>/</mo><mi>I</mi></mrow></math></span>) by 5.88% and 17.65%, respectively. These results confirm the utility of SSPP-based OMNs in scalable, high-performance GaN-based PAs for compact wireless front-ends.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156016"},"PeriodicalIF":3.2,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144916979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jianqiang Chen , Jiajin Li , Jingzhou Pang , Gary Zhang
{"title":"A 18–24.5 GHz high-power-density GaN MMIC power amplifier with impedance-frequency-tracking-based wideband matching approach","authors":"Jianqiang Chen , Jiajin Li , Jingzhou Pang , Gary Zhang","doi":"10.1016/j.aeue.2025.156014","DOIUrl":"10.1016/j.aeue.2025.156014","url":null,"abstract":"<div><div>This article proposes a novel broadband power amplifier (PA) design methodology based on a multi-stage configuration featuring frequency-tracking impedance matching and gain equalization through frequency-dependent load control. Specifically, a multi-stage PA architecture is introduced where the final stage implements frequency-following load impedance matching, while the driver stage employs frequency-variant load impedance to regulate gain-frequency characteristics, collectively enabling effective broadband operation. For validation, an 18–24.5 GHz broadband PA was fabricated using 0.15-<span><math><mrow><mi>μ</mi><mi>m</mi></mrow></math></span> Gallium Nitride (GaN)-on-silicon carbide (SiC) high-electron-mobility transistor (HEMT) technology. Measurements demonstrate saturated output power of 31.5–32.5 dBm, power gain of 26.7–29 dB, and power-added efficiency (PAE) of 23.6–31.3% across the operating band. It means that a power density of 3.5–4.4 W/mm over a 30.5% fractional bandwidth is achieved and a possible design paradigm of broad PA for K-band broadband applications is given.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156014"},"PeriodicalIF":3.2,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144921528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiating Wu , Xiaoping Jin , Meiyan Song , Song Xing , Chongwen Huang , Yudong Yao
{"title":"Reconfigurable intelligent surface-assisted AFDM for high-mobility communications","authors":"Xiating Wu , Xiaoping Jin , Meiyan Song , Song Xing , Chongwen Huang , Yudong Yao","doi":"10.1016/j.aeue.2025.156009","DOIUrl":"10.1016/j.aeue.2025.156009","url":null,"abstract":"<div><div>To overcome the large Doppler shift in high-mobility communications, affine frequency division multiplexing (AFDM) has recently emerged as a promising alternative to orthogonal frequency division multiplexing (OFDM). By employing the discrete affine Fourier transform, AFDM effectively mitigates time–frequency doubly selective fading and outperforms OFDM in high-Doppler scenarios. Meanwhile, reconfigurable intelligent surfaces (RIS) have also gained attention as a transformative technology for enhancing communication performance under mobility. To further improve the bit error rate (BER) performance, we propose an RIS-assisted AFDM system tailored for high-mobility settings. We first derive the input–output relations of the system in both the time and discrete affine Fourier domains. Next, the system is extended to a multiple-input multiple-output model. Then, we present an RIS phase-shift design method to maximize the signal-to-noise ratio at the receiver. Finally, we evaluate the influence of critical system parameters such as the number of RIS units, phase optimization methods, channel conditions, and antenna configurations on the system’s performance in doubly dispersive channels. Simulation results demonstrate that the proposed optimization method yields a substantial improvement in BER performance over random phase optimization. Furthermore, the proposed RIS-assisted AFDM system achieves significantly lower BER compared to both RIS-OFDM and conventional AFDM systems in doubly dispersive channels.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156009"},"PeriodicalIF":3.2,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144908632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermally reconfigurable quad-port MIMO antenna with independent frequency tuning","authors":"Anıl Karatay, Enes Ataç","doi":"10.1016/j.aeue.2025.156008","DOIUrl":"10.1016/j.aeue.2025.156008","url":null,"abstract":"<div><div>In this paper, the design, simulations, and measurements of a thermally reconfigurable, compact, high-isolation, microstrip multiple-input multiple-output (MIMO) antenna are presented. We propose a quad-port microstrip antenna sharing the same metallic circular patch. The fully microstrip-based structure provides cost and fabrication advantages over the contemporary counterparts in the literature, and the ability to independently tune the frequencies of the ports allows the assignment of desired frequency bands to each port. The proposed antenna achieves frequency reconfigurability by solely adjusting the angles of the thermally-controlled shape-memory alloy-assisted structures offering more practical and cost-effective tuning compared to the conventional methods. It is well-suited for modern communication applications, as each port covers a unique spatial angle and has sufficient cross-polarization suppression.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156008"},"PeriodicalIF":3.2,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144893663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Direct demodulation approach for regular hexagonal QAM constellations","authors":"Tooraj Jafari , Alireza Andalib , Asghar Charmin , Saeed Barghandan","doi":"10.1016/j.aeue.2025.156010","DOIUrl":"10.1016/j.aeue.2025.156010","url":null,"abstract":"<div><div>Next-generation wireless systems increasingly rely on millimeter-wave (mm-wave) frequencies to access the high bandwidth required for multi-gigabit and terabit-per-second communications. However, digital signal processing (DSP) faces significant challenges at these extreme data rates. To overcome these limitations, innovative transmission and reception techniques are essential. In this paper, we introduce a power-efficient direct analog demodulation approach for regular Hexagonal QAM (HQAM) constellations. The proposed demodulator utilizes amplitude threshold estimation and phase detection to achieve accurate signal recovery. Analytical and simulation results demonstrate that the proposed analog HQAM demodulation achieves the same bit error rate (BER) performance as its digital counterpart while reducing power consumption.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156010"},"PeriodicalIF":3.2,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144908634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mukesh Kumar , Sanjeev Kumar , Gobinda Sen , Santanu Das
{"title":"Highly miniaturized Gysel power divider with suppression of harmonics employing multiple transmission line techniques","authors":"Mukesh Kumar , Sanjeev Kumar , Gobinda Sen , Santanu Das","doi":"10.1016/j.aeue.2025.156012","DOIUrl":"10.1016/j.aeue.2025.156012","url":null,"abstract":"<div><div>In this work, a high degree of miniaturized Gysel power divider (GPD) along with harmonics suppression is presented. Firstly, a GPD consisting of three kinds of quarter wavelength lines (QWLs) is designed based on the conventional technique at 0.9 GHz which serves as the reference GPD. To reduce the circuit area of this reference design, conventional lines are replaced by multiple transmission line techniques like coupled line-based transmission line, dual transmission line and T-shaped transmission line. As a result of this, the overall circuit area of the reference GPD is reduced by 80.4 %. Moreover, 2nd, 3rd, and 4th orders unwanted harmonics are suppressed by a level better than 19 dB, 12 dB, and 11 dB, respectively.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156012"},"PeriodicalIF":3.2,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144908767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Debanjali Sarkar , Partha P. Shome , Taimoor Khan , Sembiam R. Rengarajan
{"title":"Flip-flop topology inspired forward deep neural network learning approach for modelling UWB antennas","authors":"Debanjali Sarkar , Partha P. Shome , Taimoor Khan , Sembiam R. Rengarajan","doi":"10.1016/j.aeue.2025.156007","DOIUrl":"10.1016/j.aeue.2025.156007","url":null,"abstract":"<div><div>Human-engineered systems exhibiting intelligent behavior can reduce the constraints associated with designing complex circuits, computational resources, and processing time. Machine learning (ML) algorithms enable us to imitate and create such intelligent systems. In recent years, ML algorithms have gained recognition for efficiently solving complex electromagnetic (EM) circuit design problems. Modeling high-dimensional multi-parametric structures is a significant problem for the EM research community. To address this issue, a deep neural network (DNN) learning approach based on flip-flop topology is presented in this work for fast and efficient modeling of ultra-wideband (UWB) antennas. The proposed approach comprises two interconnected DNN models (DNN I and DNN II) wherein the output of each model is iteratively fed into the other, enabling it to use both real-time output and past predictions. This bidirectional inter-model feedback enhances the capacity of the model to make precise predictions over time. The effectiveness of the proposed model is demonstrated through its application to fast and accurate modeling of miniaturized high-gain UWB antennas and compact quad-UWB multi-input multi-output (MIMO) antennas. For the high-gain UWB antenna, the FFDNN achieved a training MAPE of 0.35 % and testing MAPE of 1.41 %, representing minimum improvements of up to 78 % in training and 39 % in testing compared to traditional MLP, DNN, and FDDNN models. Similarly, for the UWB-MIMO antenna, the FFDNN achieved a training MAPE of 1.12 % and testing MAPE of 1.20 %, marking minimum improvements of approximately 48 % and 60 %, respectively, over traditional MLP, DNN, and FDDNN models. These results highlight the model’s capability to serve as a fast, data-driven surrogate for EM design tasks, offering significant gains in prediction accuracy and computational efficiency over conventional approaches.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156007"},"PeriodicalIF":3.2,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144912908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Eashwar M.V. , Nivetha T. , Bindu B. , Noor Ain Kamsani
{"title":"Spiking neural network circuit with op-amp based LIF neuron and RRAM synaptic array","authors":"Eashwar M.V. , Nivetha T. , Bindu B. , Noor Ain Kamsani","doi":"10.1016/j.aeue.2025.156004","DOIUrl":"10.1016/j.aeue.2025.156004","url":null,"abstract":"<div><div>Spiking Neural Networks (SNNs) have become crucial in neuromorphic computing for efficiently processing the vast amounts of digital data generated in the technology-driven world. The resistive RAM (RRAM) based SNNs offer superior energy efficiency, high-speed processing, parallelism, and scalability for neuromorphic computing applications. In this article, an SNN circuit with a 1T-1R RRAM synaptic array along with op-amp and 555 timer-based leaky integrate-and-fire (LIF) neuron is implemented to use for pattern recognition. The input pre-spikes from the pattern are applied to the RRAM synaptic array, which exhibits synaptic plasticity. The LIF neuron processes the synaptic array output to produce post-spikes, which modify the conductance of the RRAM synaptic array based on the spike-timing-dependent plasticity (STDP) mechanism. The unique output spikes obtained for different characters can be used for pattern recognition of the characters.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 156004"},"PeriodicalIF":3.2,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A concurrent dual-band LNA for 2.4 GHz and 5.2 GHz application based on active inductor technic","authors":"Hongyun Xie, Wentai Hu, Yudong Ma, Ziming Liu, Weizhao Jiao, Tieyi Li, Yudi Liu, Wanrong Zhang","doi":"10.1016/j.aeue.2025.155993","DOIUrl":"10.1016/j.aeue.2025.155993","url":null,"abstract":"<div><div>A concurrent dual-band low-noise amplifier (DB-LNA) based on active inductors was designed to operate at 2.4 GHz and 5.2 GHz to meet IEEE 802.11 n standards. The conventional common source cascode topology without the source degeneration inductor is implemented in the gain control stage. Input impedance matching is achieved with a single-path circuit resonating at two distinct frequencies, while output matching is accomplished using band-pass and band-stop filters. Active inductors replace traditional passive inductors to reduce layout area, and their high Q factor minimizes power consumption. Furthermore, gate noise is suppressed with a capacitor between source and gate in the input stage. The results show that the proposed DB-LNA has gains of 17.2 dB and 12.0 dB at 2.4 GHz and 5.2 GHz, respectively, with noise figures of 3.5 dB and 4.7 dB. The <span><math><msub><mrow><mi>S</mi></mrow><mrow><mn>11</mn></mrow></msub></math></span> and <span><math><msub><mrow><mi>S</mi></mrow><mrow><mn>22</mn></mrow></msub></math></span> of the DB-LNA are both less than −10 dB at both frequency bands. The 1 dB compression points are −23.9 dBm at 2.4 GHz and −18.7 dBm at 5.2 GHz, with third-order input intercept point values of −13.1 dBm and −8.3 dBm, respectively. The total power dissipation is 15.72 mW with a 1.2 V supply, and the layout area is 0.32 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 155993"},"PeriodicalIF":3.2,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144908635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design of a fourth-order bandpass frequency selective surface via aperture-coupled approach","authors":"Neelavathy M., Yogesh Kumar Choukiker","doi":"10.1016/j.aeue.2025.155989","DOIUrl":"10.1016/j.aeue.2025.155989","url":null,"abstract":"<div><div>This article presents the design and experimental validation of a single-passband, fourth-order frequency selective surface (FSS). A circular patch resonator loaded with diagonal triangle slot is first designed to characterize the dual-mode operation. To suppress cross-polarized reflections generated by these modes, four such resonators are arranged with a <span><math><mrow><mn>9</mn><msup><mrow><mn>0</mn></mrow><mrow><mi>o</mi></mrow></msup></mrow></math></span> separation between adjacent patches. Following this, a single-band bandpass FSS based on a multilayer aperture-coupled (AC) structure is developed. The designed FSS provides greater flexibility in achieving single-band higher-order filtering responses compared to traditional AC patch resonators. It is validated through electric and magnetic coupling in the slot-loaded AC circular patch resonator, confirming the effectiveness of the design approach. Additionally, an equivalent circuit is developed using lumped elements, and both even- and odd-mode analyses are performed. The fabricated FSS prototypes are experimentally validated, demonstrating angular stability across varying incidence angles from <span><math><msup><mrow><mn>0</mn></mrow><mrow><mi>o</mi></mrow></msup></math></span> to <span><math><mrow><mn>5</mn><msup><mrow><mn>0</mn></mrow><mrow><mi>o</mi></mrow></msup></mrow></math></span>, while maintaining consistent resonant behavior for broadband responses.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"201 ","pages":"Article 155989"},"PeriodicalIF":3.2,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}