Aeu-International Journal of Electronics and Communications最新文献

{"title":"A high interference-rejection receiver front-end for 5G applications using novel architecture and compact zero-pole filtering circuit topology","authors":"Zishen Lan ,&nbsp;Jian Qin","doi":"10.1016/j.aeue.2024.155599","DOIUrl":"10.1016/j.aeue.2024.155599","url":null,"abstract":"<div><div>This paper presents a high interference-rejection receiver front-end in 0.15-<span><math><mi>μ</mi></math></span>m GaAs pHEMT process for 5G applications. We propose a novel architecture to improve the selectivity of the receiver front-end, thereby enhancing its interference-rejection capability. The design strategy of this novel architecture is to split the functions of the high-selectivity filter and distribute them into the individual devices within the receiver front-end, and then employ the more compact zero-pole filtering circuit topology to implement and merge these split functions. This enables us to achieve the equivalent integration of the high-selectivity filter within the receiver front-end while maintaining an optimal balance among its multiple key performance parameters. Simulation results demonstrate that within the relatively low intermediate frequency (IF) range of 2.7–3.3 GHz, this receiver front-end has an equivalent 20-dB shape factor (<span><math><msub><mrow><mi>SF</mi></mrow><mrow><mn>20</mn></mrow></msub></math></span>) of less than 2.14, which exhibits excellent selectivity. Consequently, it can efficiently suppress various interference signals, featuring an image-rejection ratio (IRR) exceeding 63 dB and a local-oscillator feedthrough rejection ratio (LOFTRR) surpassing 58 dB. Furthermore, this receiver front-end achieves a noise figure (NF) of less than 2.8 dB, a peak conversion gain (CG) ranging from 23.5 to 26.5 dB, and an input 1-dB compression point (IP1dB) greater than −23 dBm.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155599"},"PeriodicalIF":3.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142723288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wireless power transfer system with multi conformal receivers based on PT symmetry","authors":"Kang Yang,&nbsp;Shixing Yu,&nbsp;Na Kou","doi":"10.1016/j.aeue.2024.155601","DOIUrl":"10.1016/j.aeue.2024.155601","url":null,"abstract":"<div><div>In this letter, we propose a wireless power transfer (WPT) system with conformal receivers based on parity-time (PT) symmetry. The transmitter is constructed by a negative resistor powered parallel LC circuit, including a planar transmitting coil. The two receivers are both of parallel LCR topology with flexible coils as the inductance. The transmission characteristics of the system are analyzed and verified under different conformal conditions of the two receiving coils. The theoretical analyses and experimental results show that whether the two receiving coils are planar or cylindrical, the PT symmetric state can be achieved and robust transmission features can be obtained in the strong coupling region. The proposed WPT system can provide references for practical wireless charging platforms when deformations of electronic devices occur and multi devices need to be charged.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155601"},"PeriodicalIF":3.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142723287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Initial-boosted dynamics in a memristive Chialvo map and its application for image encryption with hardware implementation","authors":"Liping Huang,&nbsp;Weiwei Fan,&nbsp;Chengtao Feng,&nbsp;Han Bao,&nbsp;Ning Wang,&nbsp;Quan Xu","doi":"10.1016/j.aeue.2024.155597","DOIUrl":"10.1016/j.aeue.2024.155597","url":null,"abstract":"<div><div>Generally speaking, the discrete map possesses a low dimension and complex dynamics that can trigger hyperchaos to apply in image encryption. In this paper, we lead a memristor possessing cosine mem-conductance into the one-dimensional (1D) Chialvo map by sinusoidal-modulation-input method, thereby a two-dimensional (2D) memristive Chialvo (m-Chialvo) map is constructed. The fixed points stability and the forming mechanism for initial-boosted behavior are theoretically deduced. Numerical simulations show that the 2D m-Chialvo map can trigger initial-boosted hyperchaotic attractors, which hold the availability for image encryption. Besides, an FPGA-based digital platform is implemented to offer the verification of the initial-boosted hyperchaotic attractors. Furthermore, an STM32-based image encryption algorithm with hardware implementation is designed by deploying the coexisting hyperchaotic sequences, and the encrypted images can pass various performance tests. This verifies the feasibility of the hyperchaotic sequences for the algorithm in STM32-based image encryption with hardware implementation.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155597"},"PeriodicalIF":3.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142723286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wideband star-shaped antenna based on artificial magnetic conductor surface for unidirectional radiation","authors":"May AboEl-Hassan,&nbsp;A.E. Farahat,&nbsp;K.F.A. Hussein","doi":"10.1016/j.aeue.2024.155603","DOIUrl":"10.1016/j.aeue.2024.155603","url":null,"abstract":"<div><div>Gathering the advantages of low profile, high gain, high efficiency, and wideband operation in a planar antenna is a challenging objective for the antenna designer. Low profile wideband antennas are usually characterized by low gain. An antenna of wideband impedance matching usually suffers continuous variations of the gain over such a wideband due to the variation of the radiation mechanisms and surface current distributions over the frequency band of impedance matching. Therefore, the motivation of the present work is to provide both impedance matching and stabilized high gain by the aid of wideband artificial magnetic conductor (AMC) with a design of the unit cell that is suitable to the antenna structure and the desired frequency band. The present work, proposes the utilization of low-size wideband AMS surface (AMCS) to be placed behind a wideband omnidirectional antenna to enhance the gain over the frequency band of operation. In this way, the radiating structure combines high gain and wideband operation in the same design. A wideband planar monopole printed antenna is designed to operate as omnidirectional antenna with perfect impedance matching and radiation efficiency over the frequency band <span><math><mrow><mn>3.6</mn><mo>-</mo><mn>7.2</mn><mspace></mspace><mi>G</mi><mi>H</mi><mi>z</mi></mrow></math></span> when placed in free space. The gain of the free-standing antenna varies from <span><math><mrow><mn>2</mn><mspace></mspace><mi>d</mi><mi>B</mi><mi>i</mi></mrow></math></span> to <span><math><mrow><mn>4.5</mn><mspace></mspace><mi>d</mi><mi>B</mi><mi>i</mi></mrow></math></span> over the frequency band. A wideband AMCS is designed to enhance the antenna gain over frequency band of operation. The designed AMCS is composed of only <span><math><mrow><mn>3</mn><mo>×</mo><mn>3</mn></mrow></math></span> unit cells and overall dimensions of <span><math><mrow><mn>10</mn><mo>×</mo><mn>10</mn><mi>c</mi><mi>m</mi></mrow></math></span>. This surface is placed parallel to the planar antenna at a distance <span><math><mrow><mn>1.7</mn><mspace></mspace><mi>c</mi><mi>m</mi></mrow></math></span> behind it. The enhanced gain of the radiating structure of the AMCS-backed antenna reaches <span><math><mrow><mn>8.5</mn><mspace></mspace><mi>d</mi><mi>B</mi><mi>i</mi></mrow></math></span> without affecting the bandwidth over which the input impedance is matched to the feeding line. The radiation efficiency of the AMCS-backed antenna is maintained above <span><math><mrow><mn>98</mn><mo>%</mo></mrow></math></span> over the frequency band of operation (<span><math><mrow><mn>3.7</mn><mo>-</mo><mn>7.2</mn><mspace></mspace><mi>G</mi><mi>H</mi><mi>z</mi></mrow></math></span>). The wideband antenna and the AMCS are fabricated for practical evaluation of the overall AMCS-backed antenna performance including the measurements of impedance matching, gain and radiation efficiency. The measurements and simulation results are in good consent.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155603"},"PeriodicalIF":3.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142703746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of multi-band circuit with negative group delay and lower insertion loss characteristics","authors":"Aixia Yuan ,&nbsp;Xinqi Guo ,&nbsp;Yuwei Meng ,&nbsp;Junzheng Liu ,&nbsp;Niannan Chang","doi":"10.1016/j.aeue.2024.155596","DOIUrl":"10.1016/j.aeue.2024.155596","url":null,"abstract":"<div><div>A novel multi-band pass negative group delay (NGD) circuit with lower insertion loss is proposed in this paper. Firstly, a single-band NGD circuit cell is designed as the fundamental component of the multi-band circuit. Secondly, this paper utilizes a tri-band circuit as an illustrative example to demonstrate the implementation of multi-band circuit. The scattering parameters are utilized to analyze the proposed two-port circuits. The circuit was subjected to theoretical analysis based on the relevant principles of microwave circuits. Finally, by simulating the circuit on ADS software, the impact of each component on the performance of the circuit is obtained. The proposed circuits are fabricated and measured, from the measured results, the single-band cell can generate a group delay of −3.73 ns at 138.1 MHz, with an associated insertion loss of only 2.5 dB. The group delay value of the multi-band circuit in the three bands are −3.99 ns, −3.47 ns and −3.12 ns, and the maximum insertion loss is only 3.31 dB. The bandpass NGD measured results agree well with the theoretical prediction. The proposed NGD bandpass circuit can be applied for signal delay correction.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155596"},"PeriodicalIF":3.0,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142703772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prediction of cut-off frequency based on Taguchi artificial neural network framework for designing compact spoof surface plasmon polaritons printed lines","authors":"Brij Kumar Bharti ,&nbsp;Suyash Kumar Singh ,&nbsp;Amar Nath Yadav","doi":"10.1016/j.aeue.2024.155589","DOIUrl":"10.1016/j.aeue.2024.155589","url":null,"abstract":"<div><div>In this paper, a novel approach for designing compact spoof surface plasmon polariton (SSPP) based printed transmission lines (TLs) using a Taguchi artificial neural network (T-ANN) is proposed. The challenge in determining the cut-off frequency of SSPPs lies in the absence of a closed-form expression relating it to the geometrical parameters of a planar dielectric substrate with a thin metallic strip. Typically, the cut-off frequency of conventional SSPP structures is highly dependent on factors such as the dielectric constant, metal strip length, unit cell length, and strip width. To address this, we employ a T-ANN-based methodology to accurately predict the cut-off frequency using the geometrical parameters of the SSPP structure. The T-ANN is trained with a dataset consisting of geometrical parameters and their corresponding cut-off frequencies obtained via full-wave electromagnetic simulations. The trained model is then utilized to optimize the SSPP unit cell parameters, aiming to achieve a desired cut-off frequency within a compact design framework. The MSE (mean square error) and validation <span><math><msup><mrow><mi>R</mi></mrow><mrow><mn>2</mn></mrow></msup></math></span> scores of 8000 different data sets are 0.00134 and 0.99 respectively with normally distributed residuals. A comparative analysis between the T-ANN-predicted and full-wave simulated cut-off frequencies for 20 different design parameter sets demonstrates close alignment. The validation dataset converges within 20 epochs, confirming that the model avoids overfitting. Furthermore, a transmission line is designed based on the T-ANN-predicted parameters, and a prototype is fabricated. The performance of the design is validated through simulated and measured S-parameters.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155589"},"PeriodicalIF":3.0,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142703769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low power RF rectifiers based on class-E/F2 architecture for energy harvesting applications","authors":"Marwa Mansour ,&nbsp;Islam Mansour","doi":"10.1016/j.aeue.2024.155600","DOIUrl":"10.1016/j.aeue.2024.155600","url":null,"abstract":"<div><div>This article introduces a new low-power Class-E/F₂ shunt rectifier and voltage doubler (VD) for energy harvesting (EH) applications, employing RO4003C substrate. These circuits achieve high efficiency and produce a substantial DC voltage. The proposed designs are suitable for LTE, IoT, WSN, GSM 900, and low-power EH systems. The innovative designs are depending on a Class-E/F₂ circuit structure, which combines Class-E and inverse Class-F configurations with a second harmonic resonance circuit. This configuration effectively eliminates the second harmonic current component by employing a <span><math><mrow><mrow><mi>λ</mi></mrow><mo>/</mo><mn>8</mn></mrow></math></span> transmission line (TL) linked to the anode terminal of the diode. At low values of input power (<span><math><msub><mrow><mi>P</mi></mrow><mrow><mrow><mi>i</mi></mrow><mrow><mi>n</mi></mrow></mrow></msub></math></span>), the voltage and efficiency-boosting are achieved by designing two coupling transmission lines (CTLs). The proposed rectifier and voltage doubler circuits include a DC-pass filter designed to eliminate high-frequency components. The rectifier and VD circuits are manufactured using the HSMS-285x series Schottky diodes. When a radio input power (<span><math><msub><mrow><mi>P</mi></mrow><mrow><mrow><mi>i</mi></mrow><mrow><mi>n</mi></mrow></mrow></msub></math></span>) is equal to −10 dBm, the rectifier and VD circuits demonstrate experimental conversion efficiencies larger than 40 %. The DC voltage is 0.6 V at both 650 MHz and 900 MHz, with terminal resistances (<span><math><msub><mrow><mi>R</mi></mrow><mrow><mi>L</mi></mrow></msub></math></span>) of 4.3 kΩ and 8 kΩ for rectifier and VD, respectively. The rectifier design achieves a maximum measured efficiency equal to 50 %, maintaining a constant DC-voltage equal to 1.7 V at<span><math><msub><mrow><mi>R</mi></mrow><mrow><mi>L</mi></mrow></msub></math></span> = 4.3 kΩ and 900 MHz. Additionally, the proposed VD demonstrates a peak experimental efficiency equal to 57 %, with a constant DC-voltage equal to 3.2 V at <span><math><mrow><msub><mrow><mi>P</mi></mrow><mrow><mrow><mi>i</mi></mrow><mrow><mi>n</mi></mrow></mrow></msub><mo>=</mo><mn>0</mn><mspace></mspace><mrow><mi>d</mi></mrow><mrow><mi>B</mi></mrow><mrow><mi>m</mi></mrow></mrow></math></span> and <span><math><mrow><msub><mrow><mi>R</mi></mrow><mrow><mi>L</mi></mrow></msub><mo>=</mo><mn>8</mn><mspace></mspace><mi>K</mi><mi>Ω</mi></mrow></math></span>, operating in two bands of 650 MHz and 900 MHz. It also achieves a measured efficiency equal to 45 % at <span><math><mrow><msub><mrow><mi>P</mi></mrow><mrow><mrow><mi>i</mi></mrow><mrow><mi>n</mi></mrow></mrow></msub><mo>=</mo><mo>-</mo><mn>10</mn><mspace></mspace><mrow><mi>d</mi></mrow><mrow><mi>B</mi></mrow><mrow><mi>m</mi></mrow></mrow></math></span>. Finally, the PCB sizes of the suggested rectifier and VD are 3 cm² and 3.37 cm², respectively.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"188 ","pages":"Article 155600"},"PeriodicalIF":3.0,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 3.45 GHz linear array antenna based on Wilkinson power divider structure","authors":"Weibing Xiao ,&nbsp;Kuangang Fan ,&nbsp;Fazhu Zhou ,&nbsp;Jizan Zhu ,&nbsp;Shuliang Li","doi":"10.1016/j.aeue.2024.155594","DOIUrl":"10.1016/j.aeue.2024.155594","url":null,"abstract":"<div><div>In this paper, Aiming at the problems of high delay, high density, and low transmission rate of 5G mobile communication in a maglev train, a linear array antenna with 5G parallel feed of 3.45 GHz is proposed to solve the problem of low gain of 5G antenna in n78 band. The antenna is based on a non-traditional Wilkinson power splitter structure to improve antenna gain. The power divider is finally extended to eight. Antenna design on low-cost FR4 material dielectric substrate while improving antenna gain, with a dielectric constant of 4.4 and a thickness of 1.6 mm. Firstly, the original size of the patch is calculated based on Matlab software and optimized by HFSS electromagnetic software simulation. Finally, the results are relatively matched by comparing the experiment with the simulation. The antenna was sequentially improved from 3.2 dB to 5.6 dB, 8.2 dB, and 9.3 dB, which are 75%, 45.42%, and 11.41% higher than the previous level of the antenna of its design, respectively, and finally 6.1 dB higher. After simulation and testing, it can be seen that the antenna has the advantages of high gain, low sidelobe, low cost, and strong directivity.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155594"},"PeriodicalIF":3.0,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142703770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Miniaturized millimeter-wave dual-band band-pass on-chip filter in 0.13-μm SiGe BiCMOS","authors":"Xianhu Luo ,&nbsp;Xu Cheng ,&nbsp;Jiang Jiang ,&nbsp;Weikang Zhou ,&nbsp;Jiangan Han ,&nbsp;Binbin Cheng ,&nbsp;Xianjin Deng ,&nbsp;Xilong Lu ,&nbsp;Liguo Zhou","doi":"10.1016/j.aeue.2024.155591","DOIUrl":"10.1016/j.aeue.2024.155591","url":null,"abstract":"<div><div>A design approach for a compact on-chip millimeter wave (mm-wave) dual-passband filter employing hybrid electromagnetic coupling (HEMC) and tunable transmission zeros (<em>TZ</em>s) is presented in a 0.13-μm SiGe BiCMOS technology. A dual-mode double-layer series folded resonator with a quarter wavelength has been designed, which reduces the chip area by approximately 40 % compared to a single-mode planar quarter resonator. Additionally, <em>TZ</em>s controlled by HEMC are introduced to enhance filter selectivity. A dual-passband filter operating in the W/F-band was realized in the 0.13-μm SiGe (Bi)-CMOS technology, with corresponding fractional bandwidths (FBW) of 15.1 % and 16.2 %, at 94/120 GHz respectively, and the average roll off rate of the filter is greater than 2 dB/GHz. The measured results demonstrate insertion losses below 5.7 dB in both passbands and the compact chip dimension is 626 × 813 μm². When this chip can be placed after the low-noise amplifier in a receiver, the insertion loss has little negative impact on system performance. To our knowledge, this is the first time a 94/120 GHz dual-band BPF in Bi-CMOS technology has been implemented in such a small size. This study presents an alternative design methodology for miniaturizing and streamlining the structure of millimeter-wave dual-passband filters in the SiGe process.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"189 ","pages":"Article 155591"},"PeriodicalIF":3.0,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142703771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of band reconfigurable Koch fractal antenna for wideband applications","authors":"Khushbu Patel,&nbsp;Santanu Kumar Behera","doi":"10.1016/j.aeue.2024.155592","DOIUrl":"10.1016/j.aeue.2024.155592","url":null,"abstract":"<div><div>In this communication, a band reconfigurable fractal antenna with modified partial ground is proposed for wireless applications. Four switches using PIN diodes supported by the antenna biasing circuit provide frequency reconfigurability, while star-shaped fractal geometry is used to achieve both miniaturisation and wideband functioning in the proposed antenna. The surface current distribution of the radiating patch is altered by the ON and OFF states of the PIN diode, which leads to the multiband resonance and reconfiguration features of the designed structure. The design<!--> <!-->has an overall electrical size of 70 × 45 × 1.6 mm³ and is made on a commonly available FR4 substrate with a thickness of 1.6 mm and a dielectric constant of 4.4. The three operational bands are as follows: case I, which covers 3.7–5 GHz (30 %); case II, which covers 1.7–3.5 GHz (71 %); and case III, which covers 1.4–4 GHz (96 %). Two distinct bands are obtained in cases I and II; and case III nearly covers the frequency band of cases I and II. Therefore, the impedance bandwidth (IBW)<!--> <!-->offers continuous wideband frequency coverage from 1.4 to 5 GHz (110 %). To sense the full band and then modify its bandwidth to choose the appropriate sub-band and prefilter out the others, the proposed antenna may switch between a wide operational band of 1.4–5 GHz with three distinct subbands. The antenna could potentially be useful for wireless communication systems<!--> <!-->in the future due to its frequency-selective feature and stable radiation patterns.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"188 ","pages":"Article 155592"},"PeriodicalIF":3.0,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142655560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}