Yi Zheng , Zhenjie Yan , Rui Yang , Binhan Zhang , Zhicong Luo , Jinghu Li
{"title":"一个具有交叉连接NPN的-122 dB PSRR曲率补偿带隙基准","authors":"Yi Zheng , Zhenjie Yan , Rui Yang , Binhan Zhang , Zhicong Luo , Jinghu Li","doi":"10.1016/j.aeue.2025.156005","DOIUrl":null,"url":null,"abstract":"<div><div>A cross-connected NPN bandgap reference (BGR) circuit with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed by using curvature-compensated and pre-regulation techniques. Compared with the traditional BGR, it does not require an operational amplifier to clamp the voltage, but uses the voltage feedback of the cross-connected NPN to clamp the voltage, making the structure simpler and eliminating the need to design an operational amplifier. Additionally, by subtracting two nearly identical positive-temperature-coefficient currents, the circuit generates a new current with enhanced curvature, which is then used as a compensating current to reduce the overall temperature coefficient. This compensating current is subsequently scaled by different gain factors to accommodate process-corner variations and serve as a trimming current. Meanwhile, the pre-regulation circuit is respectively adopted to improve PSRR. The proposed BGR circuit is implemented in a 180-nm process, boasting a minimal active area of 0.016 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>. Simulation results show that the BGR has a best TC of 4.13 ppm/<span><math><mrow><msup><mrow></mrow><mrow><mo>°</mo></mrow></msup><mi>C</mi></mrow></math></span> from −40 °C to 125 °C at 3.3 V, a PSRR of −122 dB at low frequencies, and a linear regulation (LR) of 0.0027 mV/V within the supply voltage range of 3.0 V to 3.6 V.</div></div>","PeriodicalId":50844,"journal":{"name":"Aeu-International Journal of Electronics and Communications","volume":"202 ","pages":"Article 156005"},"PeriodicalIF":3.2000,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A -122 dB PSRR curvature-compensated bandgap reference with cross-connected NPN\",\"authors\":\"Yi Zheng , Zhenjie Yan , Rui Yang , Binhan Zhang , Zhicong Luo , Jinghu Li\",\"doi\":\"10.1016/j.aeue.2025.156005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>A cross-connected NPN bandgap reference (BGR) circuit with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed by using curvature-compensated and pre-regulation techniques. Compared with the traditional BGR, it does not require an operational amplifier to clamp the voltage, but uses the voltage feedback of the cross-connected NPN to clamp the voltage, making the structure simpler and eliminating the need to design an operational amplifier. Additionally, by subtracting two nearly identical positive-temperature-coefficient currents, the circuit generates a new current with enhanced curvature, which is then used as a compensating current to reduce the overall temperature coefficient. This compensating current is subsequently scaled by different gain factors to accommodate process-corner variations and serve as a trimming current. Meanwhile, the pre-regulation circuit is respectively adopted to improve PSRR. The proposed BGR circuit is implemented in a 180-nm process, boasting a minimal active area of 0.016 mm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>. Simulation results show that the BGR has a best TC of 4.13 ppm/<span><math><mrow><msup><mrow></mrow><mrow><mo>°</mo></mrow></msup><mi>C</mi></mrow></math></span> from −40 °C to 125 °C at 3.3 V, a PSRR of −122 dB at low frequencies, and a linear regulation (LR) of 0.0027 mV/V within the supply voltage range of 3.0 V to 3.6 V.</div></div>\",\"PeriodicalId\":50844,\"journal\":{\"name\":\"Aeu-International Journal of Electronics and Communications\",\"volume\":\"202 \",\"pages\":\"Article 156005\"},\"PeriodicalIF\":3.2000,\"publicationDate\":\"2025-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Aeu-International Journal of Electronics and Communications\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1434841125003462\",\"RegionNum\":3,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Aeu-International Journal of Electronics and Communications","FirstCategoryId":"94","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1434841125003462","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A -122 dB PSRR curvature-compensated bandgap reference with cross-connected NPN
A cross-connected NPN bandgap reference (BGR) circuit with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed by using curvature-compensated and pre-regulation techniques. Compared with the traditional BGR, it does not require an operational amplifier to clamp the voltage, but uses the voltage feedback of the cross-connected NPN to clamp the voltage, making the structure simpler and eliminating the need to design an operational amplifier. Additionally, by subtracting two nearly identical positive-temperature-coefficient currents, the circuit generates a new current with enhanced curvature, which is then used as a compensating current to reduce the overall temperature coefficient. This compensating current is subsequently scaled by different gain factors to accommodate process-corner variations and serve as a trimming current. Meanwhile, the pre-regulation circuit is respectively adopted to improve PSRR. The proposed BGR circuit is implemented in a 180-nm process, boasting a minimal active area of 0.016 mm. Simulation results show that the BGR has a best TC of 4.13 ppm/ from −40 °C to 125 °C at 3.3 V, a PSRR of −122 dB at low frequencies, and a linear regulation (LR) of 0.0027 mV/V within the supply voltage range of 3.0 V to 3.6 V.
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