IEICE Transactions on Electronics最新文献

{"title":"A Method for Researching the Influence of Relay Coil Location on the Transmission Efficiency of Wireless Power Transfer System","authors":"Pengfei Gao, Xiaoying Tian, Yannan Shi","doi":"10.1587/transele.2022ecp5057","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5057","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of Transmission Characteristics of 120-GHz-Band Close-Proximity Wireless Links Using Split-Ring-Resonator Absorber Integrated Planar Slot Antenna","authors":"A. Hirata, Tubasa Saijo, Yuma Kawamoto, T. Nagatsuma, I. Watanabe, N. Sekine, A. Kasamatsu","doi":"10.1587/transele.2022ecp5065","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5065","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Broadband port-selective silicon beam scanning device for free-space optical communication","authors":"Y. Atsumi, Tomoya Yoshida, R. Matsumoto, R. Konoike, Y. Sakakibara, Takashi Inoue, Keijiro Suzuki","doi":"10.1587/transele.2022oci0001","DOIUrl":"https://doi.org/10.1587/transele.2022oci0001","url":null,"abstract":"SUMMARY Indoor free space optical (FSO) communication technology that provides high-speed connectivity to edge users is expected to be introduced in the near future mobile communication system, where the silicon photonics solid-state beam scanning device is a promising tool because of its low cost, long-term reliability, and other beneficial properties. However, the current two-dimensional beam scanning devices using grating coupler arrays have di ffi culty in increasing the transmission capacity because of bandwidth regulation. To solve the problem, we have introduced a broadband surface optical coupler, “elephant coupler,” which has great potential for combining wavelength and spatial division multiplexing technologies into the beam scanning device, as an alternative to grating couplers. The prototype port-selective silicon beam scanning device fabricated using a 300 mm CMOS pilot line achieved broadband optical beam emission with a 1 dB-loss bandwidth of 40 nm and demonstrated beam scanning using an imaging lens. The device has also exhibited free-space signal transmission of non-return-to-zero on-o ff -keying signals at 10 Gbps over a wide wavelength range of 60 nm. In this paper, we present an overview of the developed beam scanning device. Furthermore, the theoretical design guidelines for indoor mobile FSO communication are discussed.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"128 Gbit/s operation of AXEL with energy efficiency of 1.5 pJ/bit for optical interconnection","authors":"W. Kobayashi, S. Kanazawa, T. Shindo, M. Mitsuhara, F. Nakajima","doi":"10.1587/transele.2022oci0002","DOIUrl":"https://doi.org/10.1587/transele.2022oci0002","url":null,"abstract":"SUMMARY We evaluated the energy efficiency per 1-bit transmission of an optical light source on InP substrate to achieve optical interconnection. A semiconductor optical amplifier (SOA) assisted extended reach EADFB laser (AXEL) was utilized as the optical light source to enhance the energy efficiency compared to the conventional electro-absorption modulator integrated with a DFB laser (EML). The AXEL has frequency bandwidth extendibility for operation of over 100 Gbit/s, which is difficult when using a vertical cavity surface emitting laser (VCSEL) without an equalizer. By designing the AXEL for low power consumption, we were able to achieve 64-Gbit/s, 1.0 pJ/bit and 128-Gbit/s, 1.5 pJ/bit operation at 50 °C with the transmitter dispersion and eye closure quaternary of 1.1 dB.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"300-GHz-band diplexer for frequency-division multiplexed wireless communication","authors":"Yuma Kawamoto, Toki Yoshioka, Norihiko Shibata, D. Headland, Masayuki Fujita, Ryo Koma, Ryo Igarashi, K. Hara, J. Kani, T. Nagatsuma","doi":"10.1587/transele.2023mms0006","DOIUrl":"https://doi.org/10.1587/transele.2023mms0006","url":null,"abstract":"SUMMARY We propose a novel silicon diplexer integrated with filters for frequency-division multiplexing in the 300-GHz band. The diplexer consists of a directional coupler formed of unclad silicon wires, a photonic bandgap-based low-pass filter, and a high-pass filter based on frequency-dependent bending loss. These integrated filters are capable of suppressing crosstalk and providing >15 dB isolation over 40 GHz, which is highly beneficial for terahertz-range wireless communications applications. We have used this diplexer in a simultaneous error-free wireless transmission of 300-GHz and 335-GHz channels at the aggregate data rate of 36 Gbit/s.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Electromagnet Interference on Speed and Position Estimations of Sensorless SPMSM","authors":"Yuanhe Xue, Wei Yan, Xuan Liu, Mengxia Zhou, Yang Zhao, Hao Ma","doi":"10.1587/transele.2023ecp5030","DOIUrl":"https://doi.org/10.1587/transele.2023ecp5030","url":null,"abstract":"Model-based sensorless control of permanent magnet synchronous motor (PMSM) is promising for high-speed operation to estimate motor state, which is the speed and the position of the rotor, via electric signals of the stator, beside the inevitable fact that estimation accuracy is degraded by electromagnet interference (EMI) from switching devices of the converter. In this paper, the simulation system based on Luenberger observer and phase-locked loop (PLL) has been established, analyzing impacts of EMI on motor state estimations theoretically, exploring influences of EMI with different cutoff frequency, rated speeds, frequencies and amplitudes. The results show that Luenberger observer and PLL have strong immunity, which enable PMSM can still operate stably even under certain degrees of interference. EMI produces sideband harmonics that enlarge pulsation errors of speed and position estimations. Additionally, estimation errors are positively correlated with cutoff frequency of low-pass filter and the amplitude of EMI, and negatively correlated with rated speed of the motor and the frequency of EMI. When the frequency is too high, its effects on motor state estimations are negligible. This work contributes to the comprehensive understanding of how EMI affects motor state estimations, which further enhances practical application of sensorless PMSM.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135562965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier","authors":"Masaru Sato, Y. Kumazaki, N. Okamoto, T. Ohki, N. Kurahashi, M. Nishimori, A. Yamada, J. Kotani, N. Hara, Keiji Watanabe","doi":"10.1587/transele.2022ecp5046","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5046","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67305948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk","authors":"Kaito Tomari, J. Yoneda, T. Kodera","doi":"10.1587/transele.2022fus0001","DOIUrl":"https://doi.org/10.1587/transele.2022fus0001","url":null,"abstract":"SUMMARY Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip- chip bonding.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Power-Supply Six-Transistor CMOS SRAM Enabling Low-Voltage Writing, Low-Voltage Reading, and Low Standby Power Consumption","authors":"T. Enomoto, Nobuaki Kobayashi","doi":"10.1587/transele.2022ecp5053","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5053","url":null,"abstract":"SUMMARY We developed a self-controllable voltage level (SVL) circuit and applied this circuit to a single-power-supply, six-transistor complementary metal-oxide-semiconductor static random-access memory (SRAM) to not only improve both write and read performances but also to achieve low standby power and data retention (holding) capability. The SVL circuit comprises only three MOSFETs (i.e., pull-up, pull-down and bypass MOSFETs). The SVL circuit is able to adaptively generate both optimal memory cell voltages and word line voltages depending on which mode of operation (i.e., write, read or hold operation) was used. The write margin ( V WM ) and read margin ( V RM ) of the developed (dvlp) SRAM at a supply voltage ( V DD ) of 1 V were 0.470 and 0.1923 V, respectively. These values were 1.309 and 2.093 times V WM and V RM of the conventional (conv) SRAM, respectively. At a large threshold voltage ( V t ) variability (= +6 σ ), the minimum power supply voltage ( V Min ) for the write operation of the conv SRAM was 0.37 V, whereas it decreased to 0.22 V for the dvlp SRAM. V Min for the read operation of the conv SRAM was 1.05 V when the V t variability (= -6 σ ) was large, but the dvlp SRAM lowered it to 0.41 V. These results show that the SVL circuit expands the operating voltage range for both write and read operations to lower voltages. The dvlp SRAM reduces the standby power consumption ( P ST ) while retaining data. The measured P ST of the 2k-bit, 90-nm dvlp SRAM was only 0.957 μ W at V DD = 1.0 V, which was 9.46% of P ST of the conv SRAM (10.12 μ W). The Si area overhead of the SVL circuits was only 1.383% of the dvlp SRAM.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fine feature analysis of metal plate based on two-dimensional imaging under non-ideal scattering","authors":"Xiaofang Li, B. Deng, Qiang Fu, Hongqiang Wang","doi":"10.1587/transele.2022ecp5054","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5054","url":null,"abstract":"SUMMARY The ideal point scattering model requires that each scattering center is isotropic, the position of the scattering center corresponding to the target remains unchanged, and the backscattering amplitude and phase of the target do not change with the incident frequency and incident azimuth. In fact, these conditions of the ideal point scattering model are difficult to meet, and the scattering models are not ideal in most cases. In order to understand the difference between non-ideal scattering center and ideal scattering center, this paper takes a metal plate as the research object, carries out two-dimensional imaging of the metal plate, compares the difference between the imaging position and the theoretical target position, and compares the shape of the scattering center obtained from two-dimensional imaging of the plate from different angles. From the experimental results, the offset between the scattering center position and the theoretical target position corresponding to the two-dimensional imaging of the plate under the non-ideal point scattering model is less than the range resolution and azimuth resolution. The deviation between the small angle two-dimensional imaging position and the theoretical target position using the ideal point scattering model is small, and the ideal point scattering model is still suitable for the two-dimensional imaging of the plate. In the imaging process, the ratio of range resolution and azimuth resolution affects the shape of the scattering center. The range resolution is equal to the azimuth resolution, the shape of the scattering center is circular; the range resolution is not equal to the azimuth resolution, and the shape of the scattering center is elliptic. In order to obtain more accurate two-dimensional image, the appropriate range resolution and azimuth resolution can be considered when using the ideal point scattering model for two-dimensional imaging. The two-dimensional imaging results of the plate at different azimuth and angle can be used as a reference for the study of non-ideal point scattering model.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}