IEICE Transactions on Electronics最新文献_第4页

Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application 在5nm厚铁电非掺杂HfO2栅极绝缘体mfset上沉积Pt栅极的kr等离子溅射技术

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022fup0003

Joong‐Won Shin, Masakazu Tanuma, S. Ohmi

引用次数: 0

A Method for Researching the Influence of Relay Coil Location on the Transmission Efficiency of Wireless Power Transfer System 继电器线圈位置对无线电力传输系统传输效率影响的研究方法

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022ecp5057

Pengfei Gao, Xiaoying Tian, Yannan Shi

引用次数: 0

Evaluation of Transmission Characteristics of 120-GHz-Band Close-Proximity Wireless Links Using Split-Ring-Resonator Absorber Integrated Planar Slot Antenna 分环谐振吸收集成平面缝隙天线对120 ghz频段近距离无线链路传输特性的评估

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022ecp5065

A. Hirata, Tubasa Saijo, Yuma Kawamoto, T. Nagatsuma, I. Watanabe, N. Sekine, A. Kasamatsu

引用次数: 0

Broadband port-selective silicon beam scanning device for free-space optical communication 用于自由空间光通信的宽带端口选择性硅束扫描装置

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022oci0001

Y. Atsumi, Tomoya Yoshida, R. Matsumoto, R. Konoike, Y. Sakakibara, Takashi Inoue, Keijiro Suzuki

{"title":"Broadband port-selective silicon beam scanning device for free-space optical communication","authors":"Y. Atsumi, Tomoya Yoshida, R. Matsumoto, R. Konoike, Y. Sakakibara, Takashi Inoue, Keijiro Suzuki","doi":"10.1587/transele.2022oci0001","DOIUrl":"https://doi.org/10.1587/transele.2022oci0001","url":null,"abstract":"SUMMARY Indoor free space optical (FSO) communication technology that provides high-speed connectivity to edge users is expected to be introduced in the near future mobile communication system, where the silicon photonics solid-state beam scanning device is a promising tool because of its low cost, long-term reliability, and other beneﬁcial properties. However, the current two-dimensional beam scanning devices using grating coupler arrays have di ﬃ culty in increasing the transmission capacity because of bandwidth regulation. To solve the problem, we have introduced a broadband surface optical coupler, “elephant coupler,” which has great potential for combining wavelength and spatial division multiplexing technologies into the beam scanning device, as an alternative to grating couplers. The prototype port-selective silicon beam scanning device fabricated using a 300 mm CMOS pilot line achieved broadband optical beam emission with a 1 dB-loss bandwidth of 40 nm and demonstrated beam scanning using an imaging lens. The device has also exhibited free-space signal transmission of non-return-to-zero on-o ﬀ -keying signals at 10 Gbps over a wide wavelength range of 60 nm. In this paper, we present an overview of the developed beam scanning device. Furthermore, the theoretical design guidelines for indoor mobile FSO communication are discussed.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"1 1","pages":"739-747"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

128 Gbit/s operation of AXEL with energy efficiency of 1.5 pJ/bit for optical interconnection 128 Gbit/s的AXEL操作，能量效率为1.5 pJ/bit，用于光互连

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022oci0002

W. Kobayashi, S. Kanazawa, T. Shindo, M. Mitsuhara, F. Nakajima

引用次数: 0

300-GHz-band diplexer for frequency-division multiplexed wireless communication 用于频分复用无线通信的300 ghz频段双工器

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023mms0006

Yuma Kawamoto, Toki Yoshioka, Norihiko Shibata, D. Headland, Masayuki Fujita, Ryo Koma, Ryo Igarashi, K. Hara, J. Kani, T. Nagatsuma

引用次数: 1

Ferrule endface dimension optimization for standard outer diameter 4-core fiber connector 标准外径4芯光纤连接器护套端面尺寸优化

4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023emp0001

Kiyoshi KAMIMURA, Yuki FUJIMAKI, Kentaro MATSUDA, Ryo NAGASE

引用次数: 1

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier 采用高效GaN-on-GaN HEMT功率放大器的均匀/选择性加热微波炉

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022ecp5046

Masaru Sato, Y. Kumazaki, N. Okamoto, T. Ohki, N. Kurahashi, M. Nishimori, A. Yamada, J. Kotani, N. Hara, Keiji Watanabe

引用次数: 0

Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk 减少片上微波串扰的半导体量子位器件的接触垫设计考虑

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022fus0001

Kaito Tomari, J. Yoneda, T. Kodera

引用次数: 0

Single-Power-Supply Six-Transistor CMOS SRAM Enabling Low-Voltage Writing, Low-Voltage Reading, and Low Standby Power Consumption 支持低电压写入、低电压读取和低待机功耗的单电源六晶体管CMOS SRAM

IF 0.5 4区工程技术

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022ecp5053

T. Enomoto, Nobuaki Kobayashi

{"title":"Single-Power-Supply Six-Transistor CMOS SRAM Enabling Low-Voltage Writing, Low-Voltage Reading, and Low Standby Power Consumption","authors":"T. Enomoto, Nobuaki Kobayashi","doi":"10.1587/transele.2022ecp5053","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5053","url":null,"abstract":"SUMMARY We developed a self-controllable voltage level (SVL) circuit and applied this circuit to a single-power-supply, six-transistor complementary metal-oxide-semiconductor static random-access memory (SRAM) to not only improve both write and read performances but also to achieve low standby power and data retention (holding) capability. The SVL circuit comprises only three MOSFETs (i.e., pull-up, pull-down and bypass MOSFETs). The SVL circuit is able to adaptively generate both optimal memory cell voltages and word line voltages depending on which mode of operation (i.e., write, read or hold operation) was used. The write margin ( V WM ) and read margin ( V RM ) of the developed (dvlp) SRAM at a supply voltage ( V DD ) of 1 V were 0.470 and 0.1923 V, respectively. These values were 1.309 and 2.093 times V WM and V RM of the conventional (conv) SRAM, respectively. At a large threshold voltage ( V t ) variability (= +6 σ ), the minimum power supply voltage ( V Min ) for the write operation of the conv SRAM was 0.37 V, whereas it decreased to 0.22 V for the dvlp SRAM. V Min for the read operation of the conv SRAM was 1.05 V when the V t variability (= -6 σ ) was large, but the dvlp SRAM lowered it to 0.41 V. These results show that the SVL circuit expands the operating voltage range for both write and read operations to lower voltages. The dvlp SRAM reduces the standby power consumption ( P ST ) while retaining data. The measured P ST of the 2k-bit, 90-nm dvlp SRAM was only 0.957 μ W at V DD = 1.0 V, which was 9.46% of P ST of the conv SRAM (10.12 μ W). The Si area overhead of the SVL circuits was only 1.383% of the dvlp SRAM.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"106 1","pages":"466-476"},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0