减少片上微波串扰的半导体量子位器件的接触垫设计考虑

IF 0.6 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Kaito Tomari, J. Yoneda, T. Kodera
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引用次数: 0

摘要

减少片上微波串扰是半导体自旋量子比特集成的关键。为了减少串扰和量子比特集成,我们研究了片上微波串扰的栅极衬垫设计(i)在接触衬垫之间蚀刻沟槽或(ii)减小尺寸的接触衬垫。我们得出的结论是,具有特征(ii)的设计有利于具有小串扰(6 GHz时低于-25 dB)的半导体量子位的高密度集成,有利于引入倒装芯片键合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk
SUMMARY Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip- chip bonding.
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来源期刊
IEICE Transactions on Electronics
IEICE Transactions on Electronics 工程技术-工程:电子与电气
CiteScore
1.00
自引率
20.00%
发文量
79
审稿时长
3-6 weeks
期刊介绍: Currently, the IEICE has ten sections nationwide. Each section operates under the leadership of a section chief, four section secretaries and about 20 section councilors. Sections host lecture meetings, seminars and industrial tours, and carry out other activities. Topics: Integrated Circuits, Semiconductor Materials and Devices, Quantum Electronics, Opto-Electronics, Superconductive Electronics, Electronic Displays, Microwave and Millimeter Wave Technologies, Vacuum and Beam Technologies, Recording and Memory Technologies, Electromagnetic Theory.
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