在5nm厚铁电非掺杂HfO2栅极绝缘体mfset上沉积Pt栅极的kr等离子溅射技术

{"title":"在5nm厚铁电非掺杂HfO2栅极绝缘体mfset上沉积Pt栅极的kr等离子溅射技术","authors":"Joong‐Won Shin, Masakazu Tanuma, S. Ohmi","doi":"10.1587/transele.2022fup0003","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application\",\"authors\":\"Joong‐Won Shin, Masakazu Tanuma, S. Ohmi\",\"doi\":\"10.1587/transele.2022fup0003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":50384,\"journal\":{\"name\":\"IEICE Transactions on Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEICE Transactions on Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1587/transele.2022fup0003\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Transactions on Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1587/transele.2022fup0003","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}