Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application

IF 0.6 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI:10.1587/transele.2022fup0003

Joong‐Won Shin, Masakazu Tanuma, S. Ohmi

引用次数: 0

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在5nm厚铁电非掺杂HfO2栅极绝缘体mfset上沉积Pt栅极的kr等离子溅射技术

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEICE Transactions on Electronics 工程技术-工程：电子与电气

CiteScore

1.00

自引率

20.00%

发文量

审稿时长

3-6 weeks

期刊介绍： Currently, the IEICE has ten sections nationwide. Each section operates under the leadership of a section chief, four section secretaries and about 20 section councilors. Sections host lecture meetings, seminars and industrial tours, and carry out other activities. Topics: Integrated Circuits, Semiconductor Materials and Devices, Quantum Electronics, Opto-Electronics, Superconductive Electronics, Electronic Displays, Microwave and Millimeter Wave Technologies, Vacuum and Beam Technologies, Recording and Memory Technologies, Electromagnetic Theory.