arXiv - PHYS - Other Condensed Matter最新文献_第9页

A Pathway to Efficient Simulations of Charge Density Waves in Transition Metal Dichalcogenides: A Case Study for TiSe2 高效模拟过渡金属二卤化物中电荷密度波的途径：TiSe2 案例研究

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-04-11 DOI: arxiv-2404.07414

Li Yin, Hong Tang, Tom Berlijn, Adrienn Ruzsinszky

{"title":"A Pathway to Efficient Simulations of Charge Density Waves in Transition Metal Dichalcogenides: A Case Study for TiSe2","authors":"Li Yin, Hong Tang, Tom Berlijn, Adrienn Ruzsinszky","doi":"arxiv-2404.07414","DOIUrl":"https://doi.org/arxiv-2404.07414","url":null,"abstract":"Charge density waves (CDWs) in transition metal dichalcogenides are the\u0000subject of growing scientific interest due to their rich interplay with exotic\u0000phases of matter and their potential technological applications. Here, using\u0000density functional theory with advanced meta-generalized gradient\u0000approximations (meta-GGAs) and linear response time-dependent density\u0000functional theory (TDDFT) with state-of-the-art exchange-correlation kernels,\u0000we investigate the electronic, vibrational, and optical properties in 1T-TiSe2\u0000with and without CDW. In both bulk and monolayer TiSe2, the electronic bands\u0000and phonon dispersions in either normal (semi-metallic) or CDW (semiconducting)\u0000phase are described well via meta-GGAs, which separate the valence and\u0000conduction bands just as HSE06 does but with significantly more computational\u0000feasibility. Instead of the underestimated gap with standard\u0000exchange-correlation approximations and the overestimated gap with screened\u0000hybrid functional HSE06, the band gap of the monolayer TiSe2 CDW phase\u0000calculated by the meta-GGA MVS (151 meV) is consistent with the angle-resolved\u0000photoemission spectroscopy (ARPES) gap of 153 meV measured at 10 K. In\u0000addition, the gap of bulk TiSe2 CDW phase reaches 67 meV within the TASK\u0000approximation, close to the ARPES gap of 82 meV. Regarding excitations of\u0000many-body nature, for bulk TiSe2 in normal and CDW phases, the experimentally\u0000observed humps of electron energy loss spectroscopy and plasmon peak are\u0000successfully reproduced in TDDFT, without an obvious kernel dependence. To\u0000unleash the full scientific and technological potential of CDWs in transition\u0000metal dichalcogenides, the chemical doping, heterostructure engineering, and\u0000pump-probe techniques are needed. Our study opens the door to simulating these\u0000complexities in CDW compounds from first principles by revealing meta-GGAs as\u0000an accurate low-cost alternative to HSE06.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140600506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Robustness of topological magnons in disordered arrays of skyrmions 无序天幕阵列中拓扑磁子的鲁棒性

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-04-09 DOI: arxiv-2404.06541

H. Diego Rosales, Roberto E. Troncoso

引用次数: 0

Superclimbing modes in transverse quantum fluids: signature statistical and dynamical features 横向量子流体中的超爬升模式：标志性统计和动力学特征

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-04-04 DOI: arxiv-2404.03465

Chao Zhang, Massimo Boninsegni, Anatoly Kuklov, Nikolay Prokof'ev, Boris Svistunov

引用次数: 0

Harnessing Orbital Hall Effect in Spin-Orbit Torque MRAM 在自旋轨道转矩 MRAM 中利用轨道霍尔效应

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-04-03 DOI: arxiv-2404.02821

Rahul Gupta, Chloé Bouard, Fabian Kammerbauer, J. Omar Ledesma-Martin, Iryna Kononenko, Sylvain Martin, Gerhard Jakob, Marc Drouard, Mathias Kläui

{"title":"Harnessing Orbital Hall Effect in Spin-Orbit Torque MRAM","authors":"Rahul Gupta, Chloé Bouard, Fabian Kammerbauer, J. Omar Ledesma-Martin, Iryna Kononenko, Sylvain Martin, Gerhard Jakob, Marc Drouard, Mathias Kläui","doi":"arxiv-2404.02821","DOIUrl":"https://doi.org/arxiv-2404.02821","url":null,"abstract":"Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer\u0000improved power efficiency, nonvolatility, and performance compared to static\u0000RAM, making them ideal, for instance, for cache memory applications. Efficient\u0000magnetization switching, long data retention, and high-density integration in\u0000SOT MRAM require ferromagnets (FM) with perpendicular magnetic anisotropy (PMA)\u0000combined with large torques enhanced by Orbital Hall Effect (OHE). We have\u0000engineered PMA [Co/Ni]$_3$ FM on selected OHE layers (Ru, Nb, Cr) and\u0000investigated the potential of theoretically predicted larger orbital Hall\u0000conductivity (OHC) to quantify the torque and switching current in\u0000OHE/[Co/Ni]$_3$ stacks. Our results demonstrate a $sim$30% enhancement in\u0000damping-like torque efficiency with a positive sign for the Ru OHE layer\u0000compared to a pure Pt, accompanied by a $sim$20% reduction in switching\u0000current for Ru compared to pure Pt across more than 250 devices, leading to\u0000more than a 60% reduction in switching power. These findings validate the\u0000application of Ru in devices relevant to industrial contexts, supporting\u0000theoretical predictions regarding its superior OHC. This investigation\u0000highlights the potential of enhanced orbital torques to improve the performance\u0000of orbital-assisted SOT-MRAM, paving the way for next-generation memory\u0000technology.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"66 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140600483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated ultrafast all-optical polariton transistors 集成式超快全光极化子晶体管

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-04-02 DOI: arxiv-2404.01868

Pietro Tassan, Darius Urbonas, Bartos Chmielak, Jens Bolten, Thorsten Wahlbrink, Max C. Lemme, Michael Forster, Ullrich Scherf, Rainer F. Mahrt, Thilo Stöferle

{"title":"Integrated ultrafast all-optical polariton transistors","authors":"Pietro Tassan, Darius Urbonas, Bartos Chmielak, Jens Bolten, Thorsten Wahlbrink, Max C. Lemme, Michael Forster, Ullrich Scherf, Rainer F. Mahrt, Thilo Stöferle","doi":"arxiv-2404.01868","DOIUrl":"https://doi.org/arxiv-2404.01868","url":null,"abstract":"The clock speed of electronic circuits has been stagnant at a few gigahertz\u0000for almost two decades because of the breakdown of Dennard scaling, which\u0000states that by shrinking the size of transistors they can operate faster while\u0000maintaining the same power consumption. Optical computing could overcome this\u0000roadblock, but the lack of materials with suitably strong nonlinear\u0000interactions needed to realize all-optical switches has, so far, precluded the\u0000fabrication of scalable architectures. Recently, microcavities in the strong\u0000light-matter interaction regime enabled all-optical transistors which, when\u0000used with an embedded organic material, can operate even at room temperature\u0000with sub-picosecond switching times, down to the single-photon level. However,\u0000the vertical cavity geometry prevents complex circuits with on-chip coupled\u0000transistors. Here, by leveraging silicon photonics technology, we show\u0000exciton-polariton condensation at ambient conditions in micrometer-sized, fully\u0000integrated high-index contrast grating microcavities filled with an optically\u0000active polymer. By coupling two resonators and exploiting seeded polariton\u0000condensation, we demonstrate ultrafast all-optical transistor action and\u0000cascadability. Our experimental findings open the way for scalable, compact\u0000all-optical integrated logic circuits that could process optical signals two\u0000orders of magnitude faster than their electrical counterparts.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140600893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Continuously tunable uniaxial strain control of van der Waals heterostructure devices 范德华异质结构器件的连续可调单轴应变控制

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-04-01 DOI: arxiv-2404.00905

Zhaoyu Liu, Xuetao Ma, John Cenker, Jiaqi Cai, Zaiyao Fei, Paul Malinowski, Joshua Mutch, Yuzho Zhao, Kyle Hwangbo, Zhong Lin, Arnab Manna, Jihui Yang, David Cobden, Xiaodong Xu, Matthew Yankowitz, Jiun-Haw Chu

{"title":"Continuously tunable uniaxial strain control of van der Waals heterostructure devices","authors":"Zhaoyu Liu, Xuetao Ma, John Cenker, Jiaqi Cai, Zaiyao Fei, Paul Malinowski, Joshua Mutch, Yuzho Zhao, Kyle Hwangbo, Zhong Lin, Arnab Manna, Jihui Yang, David Cobden, Xiaodong Xu, Matthew Yankowitz, Jiun-Haw Chu","doi":"arxiv-2404.00905","DOIUrl":"https://doi.org/arxiv-2404.00905","url":null,"abstract":"Uniaxial strain has been widely used as a powerful tool for investigating and\u0000controlling the properties of quantum materials. However, existing strain\u0000techniques have so far mostly been limited to use with bulk crystals. Although\u0000recent progress has been made in extending the application of strain to\u0000two-dimensional van der Waals (vdW) heterostructures, these techniques have\u0000been limited to optical characterization and extremely simple electrical device\u0000geometries. Here, we report a piezoelectric-based in-situ uniaxial strain\u0000technique enabling simultaneous electrical transport and optical spectroscopy\u0000characterization of dual-gated vdW heterostructure devices. Critically, our\u0000technique remains compatible with vdW heterostructure devices of arbitrary\u0000complexity fabricated on conventional silicon/silicon dioxide wafer substrates.\u0000We demonstrate a large and continuously tunable strain of up to $0.15$% at\u0000millikelvin temperatures, with larger strain values also likely achievable. We\u0000quantify the strain transmission from the silicon wafer to the vdW\u0000heterostructure, and further demonstrate the ability of strain to modify the\u0000electronic properties of twisted bilayer graphene. Our technique provides a\u0000highly versatile new method for exploring the effect of uniaxial strain on both\u0000the electrical and optical properties of vdW heterostructures, and can be\u0000easily extended to include additional characterization techniques.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140600388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Giant and negative magnetoresistances in conical magnets 锥形磁体中的巨磁电阻和负磁电阻

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-04-01 DOI: arxiv-2404.01401

Raz Rivlis, Andrei Zadorozhnyi, Yuri Dahnovsky

引用次数: 0

Transient amplification in Floquet media: the Mathieu oscillator example Floquet 介质中的瞬态放大：马蒂厄振荡器实例

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-03-29 DOI: arxiv-2404.00138

Ioannis Kiorpelidis, Fotios K. Diakonos, Georgios Theocharis, Vincent Pagneux

引用次数: 0

Ultrafast exciton transport in van der Waals heterostructures 范德华异质结构中的超快激子输运

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-03-28 DOI: arxiv-2403.19571

M. M. Glazov, R. A. Suris

引用次数: 0

Structured illumination microscopy with extreme ultraviolet pulses 利用极紫外脉冲的结构照明显微技术

arXiv - PHYS - Other Condensed Matter Pub Date : 2024-03-28 DOI: arxiv-2403.19382

R. Mincigrucci, E. Paltanin, J. -S. Pelli-Cresi, F. Gala, E. Pontecorvo, L. Foglia, D. De Angelis, D. Fainozzi, A. Gessini, D. S. P. Molina, O. Stranik, F. Wechsler, R. Heintzmann, G. Ruocco, F. Bencivenga, C. Masciovecchio

引用次数: 0