A Pathway to Efficient Simulations of Charge Density Waves in Transition Metal Dichalcogenides: A Case Study for TiSe2

Li Yin, Hong Tang, Tom Berlijn, Adrienn Ruzsinszky
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Abstract

Charge density waves (CDWs) in transition metal dichalcogenides are the subject of growing scientific interest due to their rich interplay with exotic phases of matter and their potential technological applications. Here, using density functional theory with advanced meta-generalized gradient approximations (meta-GGAs) and linear response time-dependent density functional theory (TDDFT) with state-of-the-art exchange-correlation kernels, we investigate the electronic, vibrational, and optical properties in 1T-TiSe2 with and without CDW. In both bulk and monolayer TiSe2, the electronic bands and phonon dispersions in either normal (semi-metallic) or CDW (semiconducting) phase are described well via meta-GGAs, which separate the valence and conduction bands just as HSE06 does but with significantly more computational feasibility. Instead of the underestimated gap with standard exchange-correlation approximations and the overestimated gap with screened hybrid functional HSE06, the band gap of the monolayer TiSe2 CDW phase calculated by the meta-GGA MVS (151 meV) is consistent with the angle-resolved photoemission spectroscopy (ARPES) gap of 153 meV measured at 10 K. In addition, the gap of bulk TiSe2 CDW phase reaches 67 meV within the TASK approximation, close to the ARPES gap of 82 meV. Regarding excitations of many-body nature, for bulk TiSe2 in normal and CDW phases, the experimentally observed humps of electron energy loss spectroscopy and plasmon peak are successfully reproduced in TDDFT, without an obvious kernel dependence. To unleash the full scientific and technological potential of CDWs in transition metal dichalcogenides, the chemical doping, heterostructure engineering, and pump-probe techniques are needed. Our study opens the door to simulating these complexities in CDW compounds from first principles by revealing meta-GGAs as an accurate low-cost alternative to HSE06.
高效模拟过渡金属二卤化物中电荷密度波的途径:TiSe2 案例研究
过渡金属二钙化物中的电荷密度波(CDWs)因其与奇异物质相的丰富相互作用及其潜在的技术应用而日益受到科学界的关注。在这里,我们利用具有先进元广义梯度逼近(meta-GGAs)的密度泛函理论和具有最先进交换相关核的线性响应时变密度泛函理论(TDDFT),研究了具有和不具有 CDW 的 1T-TiSe2 的电子、振动和光学性质。在块状和单层 TiSe2 中,无论是正常相(半金属相)还是 CDW 相(半导体相)的电子带和声子色散都可以通过元 GGA 得到很好的描述,元 GGA 可以像 HSE06 那样分离价带和导带,但计算可行性要高得多。元-GGA MVS 计算出的单层 TiSe2 CDW 相的带隙(151 meV)与在 10 K 温度下测得的角度分辨光电子发射光谱(ARPES)带隙(153 meV)一致,而不是标准交换相关近似低估的带隙和筛选杂化函数 HSE06 高估的带隙。此外,在 TASK 近似算法中,块状 TiSe2 CDW 相的间隙达到 67 meV,接近 ARPES 间隙的 82 meV。关于多体性质的激发,对于正常相和 CDW 相的块状二氧化钛,在 TDDFT 中成功地再现了实验所观测到的电子能量损失谱驼峰和等离子峰,而没有明显的核依赖性。要充分发挥过渡金属二钴化物中 CDW 的科学和技术潜力,需要化学掺杂、异质结构工程和泵探技术。我们的研究揭示了元 GGAs 可作为 HSE06 的低成本精确替代品,从而为从第一原理模拟 CDW 化合物中的这些复杂性打开了大门。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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