arXiv - PHYS - Applied Physics最新文献_第3页

Automated design of nonreciprocal thermal emitters via Bayesian optimization 通过贝叶斯优化自动设计非互惠热辐射器

arXiv - PHYS - Applied Physics Pub Date : 2024-09-13 DOI: arxiv-2409.09192

Bach Do, Sina Jafari Ghalekohneh, Taiwo Adebiyi, Bo Zhao, Ruda Zhang

引用次数: 0

Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication 通过无氧制造实现二维电子中的声子限制传输

arXiv - PHYS - Applied Physics Pub Date : 2024-09-13 DOI: arxiv-2409.08453

Subhrajit Mukherjee, Shuhua Wang, Dasari Venkatakrishnarao, Yaoju Tarn, Teymour Talha-Dean, Rainer Lee, Ivan A. Verzhbitskiy, Ding Huang, Abhishek Mishra, John Wellington John, Sarthak Das, Fabio Bussoloti, Thathsara D. Maddumapatabandi, Yee Wen Teh, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau

{"title":"Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication","authors":"Subhrajit Mukherjee, Shuhua Wang, Dasari Venkatakrishnarao, Yaoju Tarn, Teymour Talha-Dean, Rainer Lee, Ivan A. Verzhbitskiy, Ding Huang, Abhishek Mishra, John Wellington John, Sarthak Das, Fabio Bussoloti, Thathsara D. Maddumapatabandi, Yee Wen Teh, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau","doi":"arxiv-2409.08453","DOIUrl":"https://doi.org/arxiv-2409.08453","url":null,"abstract":"Future electronics require aggressive scaling of channel material thickness\u0000while maintaining device performance. Two-dimensional (2D) semiconductors are\u0000promising candidates, but despite over two decades of research, experimental\u0000performance still lags theoretical expectations. Here, we develop an\u0000oxygen-free approach to push the electrical transport of 2D field-effect\u0000transistors toward the theoretical phonon-limited intrinsic mobility. We\u0000achieve record carrier mobilities of 91 (132) cm2V-1s-1 for mono- (bi-) layer\u0000MoS2 transistors on SiO2 substrate. Statistics from over 60 devices confirm\u0000that oxygen-free fabrication enhances key figures of merit by more than an\u0000order of magnitude. While previous studies suggest that 2D transition metal\u0000dichalcogenides such as MoS2 and WS2 are stable in air, we show that short-term\u0000ambient exposure can degrade their device performance through irreversible\u0000oxygen chemisorption. This study emphasizes the criticality of avoiding oxygen\u0000exposure, offering guidance for device manufacturing for fundamental research\u0000and practical applications of 2D materials.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new critical growth parameter and mechanistic model for SiC nanowire synthesis via Si substrate carbonization: the role of H$_2$/CH$_4$ gas flow ratio 通过硅基底碳化合成碳化硅纳米线的新临界生长参数和机理模型：H$_2$/CH$_4$ 气体流量比的作用

arXiv - PHYS - Applied Physics Pub Date : 2024-09-13 DOI: arxiv-2409.09233

Junghyun Koo, Chinkyo Kim

{"title":"A new critical growth parameter and mechanistic model for SiC nanowire synthesis via Si substrate carbonization: the role of H$_2$/CH$_4$ gas flow ratio","authors":"Junghyun Koo, Chinkyo Kim","doi":"arxiv-2409.09233","DOIUrl":"https://doi.org/arxiv-2409.09233","url":null,"abstract":"SiC structures, including nanowires and films, can be effectively grown on Si\u0000substrates through carbonization. However, growth parameters other than\u0000temperature, which influence the preferential formation of SiC nanowires or\u0000films, have not yet been identified. In this work, we investigate SiC synthesis\u0000via Si carbonization using methane (CH$_4$) by varying the growth temperature\u0000and the hydrogen to methane gas flow ratio (H$_2$/CH$_4$). We demonstrate that\u0000adjusting these parameters allows for the preferential growth of SiC nanowires\u0000or films. Specifically, SiC nanowires are preferentially grown when the\u0000H$_2$/CH$_4$ ratio exceeds a specific threshold, which varies with the growth\u0000temperature, ranging between 1200$^circ$C and 1310$^circ$C. Establishing this\u0000precise growth window for SiC nanowires in terms of the H$_2$/CH$_4$ ratio and\u0000growth temperature provides new insights into the parameter-driven morphology\u0000of SiC. Furthermore, we propose a mechanistic model to explain the preferential\u0000growth of either SiC nanowires or films, based on the kinetics of gas-phase\u0000reactions and surface processes. These findings not only advance our\u0000understanding of SiC growth mechanisms but also pave the way for optimized\u0000fabrication strategies for SiC-based nanostructures.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Systematic Investigation of PbSe Thermoelectric Material 硒化铅热电材料的系统研究

arXiv - PHYS - Applied Physics Pub Date : 2024-09-13 DOI: arxiv-2409.08716

Md. Moklesur Rahman, Md Kamal Hossain, Fateha Samad, Fysol Ibna Abbas

引用次数: 0

Thermoelectrical potential and derivation of Kelvin relation for thermoelectric materials 热电势和热电材料的开尔文关系推导

arXiv - PHYS - Applied Physics Pub Date : 2024-09-13 DOI: arxiv-2409.08836

Sikun Chen, Hongxin Zhu, Haidong Wang, Zengyuan Guo

{"title":"Thermoelectrical potential and derivation of Kelvin relation for thermoelectric materials","authors":"Sikun Chen, Hongxin Zhu, Haidong Wang, Zengyuan Guo","doi":"arxiv-2409.08836","DOIUrl":"https://doi.org/arxiv-2409.08836","url":null,"abstract":"Current research on thermoelectricity is primarily focused on the exploration\u0000of materials with enhanced performance, resulting in a lack of fundamental\u0000understanding of the thermoelectric effect. Such circumstance is not conducive\u0000to the further improvement of the efficiency of thermoelectric conversion.\u0000Moreover, available physical images of the derivation of the Kelvin relations\u0000are ambiguous. Derivation processes are complex and need a deeper understanding\u0000of thermoelectric conversion phenomena. In this paper, a new physical quantity\u0000'thermoelectrical potential' from the physical nature of the thermoelectric\u0000conversion is proposed. The quantity is expressed as the product of the Seebeck\u0000coefficient and the absolute temperature, i.e., ST. Based on the\u0000thermoelectrical potential, we clarify the conversion of the various forms of\u0000energy in the thermoelectric effect by presenting a clear physical picture.\u0000Results from the analysis of the physical mechanism of the Seebeck effect\u0000indicate that the thermoelectrical potential, rather than the temperature\u0000gradient field, exerts a force on the charge carriers in the thermoelectric\u0000material. Based on thermoelectric potential, the Peltier effects at different\u0000material interfaces can be macroscopically described. The Kelvin relation is\u0000rederived using the proposed quantity, which simplified the derivation process\u0000and elucidated the physical picture of the thermoelectrical conversion.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On-demand realization of topological states using Miura-folded metamaterials 利用三浦折叠超材料按需实现拓扑状态

arXiv - PHYS - Applied Physics Pub Date : 2024-09-12 DOI: arxiv-2409.08064

Shuaifeng Li, Yubin Oh, Seong Jae Choi, Panayotis G. Kevrekidis, Jinkyu Yang

引用次数: 0

Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes 面向未来 CMOS 技术节点的 1 纳米以下厚度氧化物半导体的 Ab Initio 器件驱动筛选

arXiv - PHYS - Applied Physics Pub Date : 2024-09-12 DOI: arxiv-2409.08096

Linqiang Xu, Yue Hu, Lianqiang Xu, Lin Xu, Qiuhui Li, Aili Wang, Chit Siong Lau, Jing Lu, Yee Sin Ang

{"title":"Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes","authors":"Linqiang Xu, Yue Hu, Lianqiang Xu, Lin Xu, Qiuhui Li, Aili Wang, Chit Siong Lau, Jing Lu, Yee Sin Ang","doi":"arxiv-2409.08096","DOIUrl":"https://doi.org/arxiv-2409.08096","url":null,"abstract":"Ultrathin oxide semiconductors with sub-1-nm thickness are promising building\u0000blocks for ultrascaled field-effect transistor (FET) applications due to their\u0000resilience against short-channel effects, high air stability, and potential for\u0000low-energy device operation. However, the n-type dominance of ultrathin oxide\u0000FET has hindered their integration into complementary metal-oxide-semiconductor\u0000(CMOS) technology, which requires both n-and p-type devices. Here we develop an\u0000ab initio device-driven computational screening workflow to identify sub-1-nm\u0000thickness oxide semiconductors for sub-5-nm FET applications. We demonstrate\u0000that ultrathin CaO2, CaO, and SrO are compatible with p-type device operations\u0000under both high-performance (HP) and low-power (LP) requirements specified by\u0000the International Technology Roadmap of Semiconductors (ITRS), thereby\u0000expanding the limited family of p-type oxide semiconductors. Notably, CaO and\u0000SrO emerge as the first-of-kind sub-1-nm thickness oxide semiconductors capable\u0000of simultaneously meeting the ITRS HP and LP criteria for both n-and p-type\u0000devices. CaO and SrO FETs outperform many existing low-dimensional\u0000semiconductors, exhibiting scalability below 5-nm gate length. Our findings\u0000offer a pioneering effort in the ab initio, device-driven screening of sub-1-nm\u0000thickness oxide semiconductors, significantly broadening the material candidate\u0000pool for future CMOS technology nodes.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spike-timing-dependent-plasticity learning in a planar magnetic domain wall artificial synapsis 平面磁域壁人工突触中的尖峰计时依赖性可塑性学习

arXiv - PHYS - Applied Physics Pub Date : 2024-09-12 DOI: arxiv-2409.08055

J. O. Castro, B. Buyatti, D. Mercado, A. Di Donato, M. Quintero, M. Tortarolo

引用次数: 0

Nanoporosity imaging by positronium lifetime tomography 利用正电子寿命层析成像技术进行纳米孔隙成像

arXiv - PHYS - Applied Physics Pub Date : 2024-09-12 DOI: arxiv-2409.07963

K. Dulski, E. Beyene, N. Chug, C. Curceanu, E. Czerwiński, M. Das, M. Gorgol, B. Jasińska, K. Kacprzak, Ł. Kapłon, G. Korcyl, T. Kozik, K. Kubat, D. Kumar, E. Lisowski, F. Lisowski, J. Mędrala-Sowa, S. Niedźwiecki, P. Pandey, S. Parzych, E. Perez del Rio, M. Rädler, S. Sharma, M. Skurzok, K. Tayefi, P. Tanty, E. Ł. Stępień, P. Moskal

{"title":"Nanoporosity imaging by positronium lifetime tomography","authors":"K. Dulski, E. Beyene, N. Chug, C. Curceanu, E. Czerwiński, M. Das, M. Gorgol, B. Jasińska, K. Kacprzak, Ł. Kapłon, G. Korcyl, T. Kozik, K. Kubat, D. Kumar, E. Lisowski, F. Lisowski, J. Mędrala-Sowa, S. Niedźwiecki, P. Pandey, S. Parzych, E. Perez del Rio, M. Rädler, S. Sharma, M. Skurzok, K. Tayefi, P. Tanty, E. Ł. Stępień, P. Moskal","doi":"arxiv-2409.07963","DOIUrl":"https://doi.org/arxiv-2409.07963","url":null,"abstract":"Positron Annihilation Lifetime Spectroscopy (PALS) is a well-established\u0000non-destructive technique used for nanostructural characterization of porous\u0000materials. It is based on the annihilation of a positron and an electron. Mean\u0000positron lifetime in the material depends on the free voids size and molecular\u0000environment, allowing the study of porosity and structural transitions in the\u0000nanometer scale. We have developed a novel method enabling spatially resolved\u0000PALS, thus providing tomography of nanostructural characterization of an\u0000extended object. Correlating space (position) and structural (lifetime)\u0000information brings new insight in materials studies, especially in the\u0000characterization of the purity and pore distribution. For the first time, a\u0000porosity image using stationary positron sources for the simultaneous\u0000measurement of the porous polymers XAD4, silica aerogel powder IC3100, and\u0000polyvinyl toluene scintillator PVT by the J-PET tomograph is demonstrated","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide 跳转优化了二硫化钼中的雪崩倍增效应

arXiv - PHYS - Applied Physics Pub Date : 2024-09-12 DOI: arxiv-2409.07677

Xiaofan Cai, Ruichang Chen, Xu Gao, Meili Yuan, Haixia Hu, Hang Yin, Yuanyuan Qu, Yang Tan, Feng Chen

{"title":"Hopping Transfer Optimizes Avalanche Multiplication in Molybdenum Disulfide","authors":"Xiaofan Cai, Ruichang Chen, Xu Gao, Meili Yuan, Haixia Hu, Hang Yin, Yuanyuan Qu, Yang Tan, Feng Chen","doi":"arxiv-2409.07677","DOIUrl":"https://doi.org/arxiv-2409.07677","url":null,"abstract":"Recently, avalanche multiplication has been observed in TMDC-based FETs,\u0000enhancing sensor performance with high sensitivity. However, the high voltage\u0000required for operation can damage the FETs, making it crucial to reduce the\u0000breakdown voltage for effective sensing applications. Here, we demonstrate that\u0000the utilization of hopping transfer induced by high-density defects can\u0000effectively reduce the breakdown voltage in TMDCs FETs. By substituting oxygen\u0000atoms for sulfur atoms in a monolayer of MoS2, we create MoS2-xOx, with x\u0000carefully adjusted within the range of 0 to 0.51. Oxygen doping reduces the\u0000bandgap of TMDCs and enhances ion collision rates. Moreover, higher levels of\u0000oxygen doping (x > 0.41) in MoS2-xOx exhibit nearest-neighbor hopping behavior,\u0000leading to a significant enhancement in electron mobility. These improvements\u0000result in a decrease in the breakdown voltage of avalanche multiplication from\u000026.2 V to 12.6 V. Additionally, we propose avalanche multiplication in MoS2-xOx\u0000as an efficient sensing mechanism to overcome the limitations of gas sensing.\u0000The MoS2-xOx sensors display an ultra-high response to NO2 gas in the air, with\u0000a response of 5.8x103 % to NO2 gas of 50 ppb at room temperature, which is\u0000nearly two orders of magnitude higher than resistance-type gas detectors based\u0000on TMDCs. This work demonstrates that hopping transfer induced by high-density\u0000oxygen defects can effectively decrease the breakdown voltage of MoS2-xOx FETs,\u0000enhancing avalanche multiplication and serving as a promising mechanism for\u0000ultrasensitive gas detection.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":"127 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142177903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0