arXiv - PHYS - Applied Physics最新文献_第2页

Characterizing generalized Floquet topological states in hybrid space-time dimensions 描述混合时空维度中的广义 Floquet 拓扑态

arXiv - PHYS - Applied Physics Pub Date : 2024-09-16 DOI: arxiv-2409.09937

Weiwei Zhu, Jian-Hua Jiang

{"title":"Characterizing generalized Floquet topological states in hybrid space-time dimensions","authors":"Weiwei Zhu, Jian-Hua Jiang","doi":"arxiv-2409.09937","DOIUrl":"https://doi.org/arxiv-2409.09937","url":null,"abstract":"In spatiotemporally modulated systems, topological states exist not only in\u0000energy gaps but also in momentum gaps. Such unconventional topological states\u0000impose challenges on topological physics. The underlying models also make the\u0000conventional Hamiltonian descriptions complicated. Here, we propose to describe\u0000such systems with space- and time-direction transfer matrices which\u0000substantially simplify the underlying theory and give direct information on the\u0000topological properties of the quasienergy and quasimomentum gaps. In\u0000particular, we find that the space- and time-direction reflection phases can\u0000serve as signatures for distinguishing various topological phases of the\u0000quasienergy and quasimomentum gaps. This approach directly reveals the\u0000topological properties of the band gap, avoiding the complexity in calculating\u0000bulk band topology in hybrid energy-moment space. By investigating two concrete\u0000models, we show that the method works well for both Hermitian and non-Hermitian\u0000systems. Furthermore, we uncover an unconventional topological state, called\u0000the anomalous Floquet quasimomentum gap, whose topological properties are\u0000invariant for different choices of the unit-cell center. This work advances the\u0000study of topological phenomena in hybrid space-time (energy-momentum) dimension\u0000that are attracting much interest due to the development of spatiotemporally\u0000modulated materials.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic metamaterials by ion-implantation 离子注入法磁超材料

arXiv - PHYS - Applied Physics Pub Date : 2024-09-16 DOI: arxiv-2409.10433

Christina Vantaraki, Petter Ström, Tuan T. Tran, Matías P. Grassi, Giovanni Fevola, Michael Foerster, Jerzy T. Sadowski, Daniel Primetzhofer, Vassilios Kapaklis

引用次数: 0

Determination of the Optimum Square Resistance of Absorbing Vanes of the Rotary Vane Attenuator 确定旋转叶片衰减器吸收叶片的最佳方阻

arXiv - PHYS - Applied Physics Pub Date : 2024-09-15 DOI: arxiv-2409.09700

Igor M. Braver, Pinkhos Sh. Fridberg, Khona L. Garb

引用次数: 0

Polarized Raman Analysis at Low Temperature to Examine Interface Phonons in InAs/GaAs_(1-x)Sb_x Quantum Dot Heterostructures 在低温下进行偏振拉曼分析以检验 InAs/GaAs_(1-x)Sb_x 量子点异质结构中的界面声子

arXiv - PHYS - Applied Physics Pub Date : 2024-09-15 DOI: arxiv-2409.09631

Priyesh Kumar, Sudip Kumar Deb, Subhananda Chakrabarti, Jhuma Saha

引用次数: 0

Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect 通过几何反常的 Nernst 效应实现双端垂直磁化设备的电学检测

arXiv - PHYS - Applied Physics Pub Date : 2024-09-15 DOI: arxiv-2409.09587

Jiuming Liu, Bin Rong, Hua Bai, Xinqi Liu, Yanghui Liu, Yifan Zhang, Yujie Xiao, Yuzhen Liang, Qi Yao, Liyang Liao, Yumeng Yang, Cheng Song, Xufeng Kou

{"title":"Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect","authors":"Jiuming Liu, Bin Rong, Hua Bai, Xinqi Liu, Yanghui Liu, Yifan Zhang, Yujie Xiao, Yuzhen Liang, Qi Yao, Liyang Liao, Yumeng Yang, Cheng Song, Xufeng Kou","doi":"arxiv-2409.09587","DOIUrl":"https://doi.org/arxiv-2409.09587","url":null,"abstract":"The non-uniform current distribution arisen from either current crowding\u0000effect or hot spot effect provides a method to tailor the interaction between\u0000thermal gradient and electron transport in magnetically ordered systems. Here\u0000we apply the device structural engineering to realize an in-plane inhomogeneous\u0000temperature distribution within the conduction channel, and the resulting\u0000geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic\u0000resistance whose polarity corresponds to the out-of-plane magnetization of\u0000Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the\u0000applied current. By optimizing the aspect ratio of convex-shaped device, the\u0000effective temperature gradient can reach up to 0.3 K/$mu$m along the\u0000y-direction, leading to a GANE signal of 28.3 $mu$V. Moreover, we demonstrate\u0000electrical write and read operations in the perpendicularly-magnetized\u0000Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our\u0000results unveil a new pathway to utilize thermoelectric effects for constructing\u0000high-density magnetic memories","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Polymer-Colloid Gels: A Solvent Perspective Using Low-Field NMR 了解聚合物胶体凝胶：利用低场核磁共振的溶剂视角

arXiv - PHYS - Applied Physics Pub Date : 2024-09-15 DOI: arxiv-2409.09864

Léo Hervéou, Gauthier Legrand, Thibaut Divoux, Guilhem P. Baeza

引用次数: 0

Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications 用于神经形态应用的多孔纳米流体晶膜管的弛豫时间

arXiv - PHYS - Applied Physics Pub Date : 2024-09-14 DOI: arxiv-2409.09327

Agustin Bou, Patricio Ramirez, Juan Bisquert

引用次数: 0

A biology-inspired model for the electrical response of solid state memristors 固态忆阻器电气响应的生物启发模型

arXiv - PHYS - Applied Physics Pub Date : 2024-09-14 DOI: arxiv-2409.09307

Agustin Bou, Cedric Gonzales, Pablo P. Boix, Antonio Guerrero, Juan Bisquert

{"title":"A biology-inspired model for the electrical response of solid state memristors","authors":"Agustin Bou, Cedric Gonzales, Pablo P. Boix, Antonio Guerrero, Juan Bisquert","doi":"arxiv-2409.09307","DOIUrl":"https://doi.org/arxiv-2409.09307","url":null,"abstract":"Memristors stand out as promising components in the landscape of memory and\u0000computing. Memristors are generally defined by a conductance equation\u0000containing a state variable that imparts a memory effect. The current-voltage\u0000cycling causes transitions of the conductance, determined by different physical\u0000mechanisms such as the formation of conducting filaments in an insulating\u0000surrounding. Here we provide a unified description of the set and reset\u0000processes, by means of a single voltage activated relaxation time of the memory\u0000variable. This approach is based on the Hodgkin-Huxley model that is widely\u0000used to describe action potentials dynamics in neurons. We focus on halide\u0000perovskite memristors and their intersection with neuroscience-inspired\u0000computing. We show that the modelling approach adeptly replicates the\u0000experimental traits of both volatile and nonvolatile memristors. Its\u0000versatility extends across various device materials and configurations,\u0000capturing nuanced behaviors such as scan rate- and upper vertex-dependence. The\u0000model also describes well the response to sequences of voltage pulses that\u0000cause synaptic potentiation effects. This model serves as a potent tool for\u0000comprehending and probing the underlying mechanisms of memristors, by\u0000indicating the relaxation properties that control observable response, which\u0000opens the way for a detailed physical interpretation.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing 利用磁隧道结的自旋电子神经元实现低功耗神经形态计算

arXiv - PHYS - Applied Physics Pub Date : 2024-09-14 DOI: arxiv-2409.09268

Steven Louis, Hannah Bradley, Cody Trevillian, Andrei Slavin, Vasyl Tyberkevych

引用次数: 0

Color Centers in Hexagonal Boron Nitride 六方氮化硼的颜色中心

arXiv - PHYS - Applied Physics Pub Date : 2024-09-13 DOI: arxiv-2409.08460

Suk Hyun Kim, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park, Young Duck Kim

{"title":"Color Centers in Hexagonal Boron Nitride","authors":"Suk Hyun Kim, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park, Young Duck Kim","doi":"arxiv-2409.08460","DOIUrl":"https://doi.org/arxiv-2409.08460","url":null,"abstract":"Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has\u0000emerged as an essential material for the encapsulation layer in van der Waals\u0000heterostructures and efficient deep ultra-violet optoelectronics. This is\u0000primarily due to its remarkable physical properties and ultrawide bandgap\u0000(close to 6 eV, and even larger in some cases) properties. Color centers in hBN\u0000refer to intrinsic vacancies and extrinsic impurities within the 2D crystal\u0000lattice, which result in distinct optical properties in the ultraviolet (UV) to\u0000near-infrared (IR) range. Furthermore, each color center in hBN exhibits a\u0000unique emission spectrum and possesses various spin properties. These\u0000characteristics open up possibilities for the development of next-generation\u0000optoelectronics and quantum information applications, including\u0000room-temperature single-photon sources and quantum sensors. Here, we provide a\u0000comprehensive overview of the atomic configuration, optical and quantum\u0000properties, and different techniques employed for the formation of color\u0000centers in hBN. A deep understanding of color centers in hBN allows for\u0000advances in the development of next-generation UV optoelectronic applications,\u0000solid-state quantum technologies, and nanophotonics by harnessing the\u0000exceptional capabilities offered by hBN color centers.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142259970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0