用于神经形态应用的多孔纳米流体晶膜管的弛豫时间

Agustin Bou, Patricio Ramirez, Juan Bisquert
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引用次数: 0

摘要

忆阻器已被定位为神经形态计算的最前沿。它们的可调电导特性能够模拟突触行为。多孔纳米流体忆阻器显示了它们的忆阻特性,是液体神经形态系统的候选器件。这种特性通过电流-电压扫描中的电感滞后显现出来,然后通过阻抗光谱测量中的电感特性得到证实。在这里,我们通过阻抗谱获得了多孔纳米流体忆阻器的动力学弛豫时间。我们的研究表明,忆阻器的这一特性与自然神经系统的特性相当。因此,我们通过寻找具有相同动力学时间的忆阻器,开辟了一条研究模拟神经元特性的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications
Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their memristic properties and are candidate devices for liquid neuromorphic systems. Such properties are visible through an inductive hysteresis in the current-voltage sweeps, which is then confirmed by the inductive characteristics in impedance spectroscopy measurements. The dynamic behaviour of memristors is largely determined by a voltage-dependent relaxation time. Here, we obtain the kinetic relaxation time of a multipore nanofluidic memristor via its impedance spectra. We show that the behaviour of this characteristic of memristors is comparable to that of natural neural systems. Hence, we open a way to study the mimic of neuron characteristics by searching for memristors with the same kinetic times.
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