利用磁隧道结的自旋电子神经元实现低功耗神经形态计算

Steven Louis, Hannah Bradley, Cody Trevillian, Andrei Slavin, Vasyl Tyberkevych
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引用次数: 0

摘要

本文提出了一种基于组合自旋阀/磁隧道结(SV/MTJ)的新型尖峰人工神经元设计。人工智能和机器学习中使用的传统硬件面临着与高功耗和可扩展性有关的重大挑战。为了应对这些挑战,能够模仿生物神经行为的自旋电子神经元提供了一种前景广阔的解决方案。我们介绍了一个基于 SV/MTJ 的神经元模型,该模型采用的技术已在商业应用中与 CMOS 成功集成。仿真结果表明,所提出的神经元设计可以在约 1 ns 的时间尺度上工作,无需任何偏置电流,功耗低至 50 uW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing
This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to high power consumption and scalability. To address these challenges, spintronic neurons, which can mimic biologically inspired neural behaviors, offer a promising solution. We present a model of an SV/MTJ-based neuron which uses technologies that have been successfully integrated with CMOS in commercially available applications. The operational dynamics of the neuron are derived analytically through the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation, demonstrating its ability to replicate key spiking characteristics of biological neurons, such as response latency and refractive behavior. Simulation results indicate that the proposed neuron design can operate on a timescale of about 1 ns, without any bias current, and with power consumption as low as 50 uW.
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