Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect

arXiv - PHYS - Applied Physics Pub Date : 2024-09-15 DOI:arxiv-2409.09587

Jiuming Liu, Bin Rong, Hua Bai, Xinqi Liu, Yanghui Liu, Yifan Zhang, Yujie Xiao, Yuzhen Liang, Qi Yao, Liyang Liao, Yumeng Yang, Cheng Song, Xufeng Kou

{"title":"Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect","authors":"Jiuming Liu, Bin Rong, Hua Bai, Xinqi Liu, Yanghui Liu, Yifan Zhang, Yujie Xiao, Yuzhen Liang, Qi Yao, Liyang Liao, Yumeng Yang, Cheng Song, Xufeng Kou","doi":"arxiv-2409.09587","DOIUrl":null,"url":null,"abstract":"The non-uniform current distribution arisen from either current crowding\neffect or hot spot effect provides a method to tailor the interaction between\nthermal gradient and electron transport in magnetically ordered systems. Here\nwe apply the device structural engineering to realize an in-plane inhomogeneous\ntemperature distribution within the conduction channel, and the resulting\ngeometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic\nresistance whose polarity corresponds to the out-of-plane magnetization of\nCo/Pt multi-layer thin film, and its amplitude is linearly proportional to the\napplied current. By optimizing the aspect ratio of convex-shaped device, the\neffective temperature gradient can reach up to 0.3 K/$\\mu$m along the\ny-direction, leading to a GANE signal of 28.3 $\\mu$V. Moreover, we demonstrate\nelectrical write and read operations in the perpendicularly-magnetized\nCo/Pt-based spin-orbit torque device with a simple two-terminal structure. Our\nresults unveil a new pathway to utilize thermoelectric effects for constructing\nhigh-density magnetic memories","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.09587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/$\mu$m along the y-direction, leading to a GANE signal of 28.3 $\mu$V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories

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通过几何反常的 Nernst 效应实现双端垂直磁化设备的电学检测

电流拥挤效应或热点效应所产生的非均匀电流分布为调整磁有序系统中的热梯度与电子传输之间的相互作用提供了一种方法。在这里，我们应用器件结构工程学来实现传导通道内的面内不均匀高温分布，由此产生的几何反常奈恩斯特效应（GANE）产生了非零的二次谐波电阻，其极性与钴/铂多层薄膜的面外磁化相对应，其振幅与施加的电流成线性比例。通过优化凸形器件的长宽比，沿其方向的有效温度梯度可达 0.3 K/$\mu$m，从而产生 28.3 $\mu$V 的 GANE 信号。此外，我们还演示了基于垂直磁化钴/铂的自旋轨道力矩器件的电气写入和读取操作，该器件具有简单的双端结构。我们的研究结果揭示了利用热电效应构建高密度磁存储器的新途径

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arXiv - PHYS - Applied Physics

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