Journal of micro/nanopatterning, materials, and metrology最新文献

{"title":"Study of electron-induced chemical transformations in polymers","authors":"Maximillian Mueller, Terry R. McAfee, Patrick Naulleau, Dahyun Oh, Oleg Kostko","doi":"10.1117/1.jmm.23.4.041403","DOIUrl":"https://doi.org/10.1117/1.jmm.23.4.041403","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"59 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141643420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spectral reflectometry characterization of an extreme ultraviolet attenuated phase-shifting mask blank","authors":"Tao Shen, I. Mochi, Dongmin Jeong, Elisabeth Mueller, Paolo Ansuinelli, Jinho Ahn, Yasin Ekinci","doi":"10.1117/1.jmm.23.4.041402","DOIUrl":"https://doi.org/10.1117/1.jmm.23.4.041402","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"45 25","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography","authors":"Xiaodong Yuan, Jinping Chen, Tianjun Yu, Yi Zeng, Xudong Guo, Shuangqing Wang, Rui-bo Hu, Peng Tian, M. Vockenhuber, D. Kazazis, Yasin Ekinci, Jun Zhao, Yanqing Wu, Guoqiang Yang, Yi Li","doi":"10.1117/1.jmm.23.3.034601","DOIUrl":"https://doi.org/10.1117/1.jmm.23.3.034601","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"92 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141657853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Denoising model for scanning electron microscope images of integrated circuits based on denoising diffusion probabilistic models","authors":"Wei Xiao, Fazhan Zhao, Hongtu Ma, Kun Zhao, Qing Li","doi":"10.1117/1.jmm.23.3.034201","DOIUrl":"https://doi.org/10.1117/1.jmm.23.3.034201","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":" 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141675113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Qualification of structured curvilinear ILT assist features for production","authors":"Yuri Granik","doi":"10.1117/1.jmm.23.2.021302","DOIUrl":"https://doi.org/10.1117/1.jmm.23.2.021302","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"44 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140244880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resources from SPIE for Lithographers","authors":"Harry Levinson","doi":"10.1117/1.jmm.23.1.010101","DOIUrl":"https://doi.org/10.1117/1.jmm.23.1.010101","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"7 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140248578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cross-evaluation of critical dimension measurement techniques","authors":"Timothée Choisnet, Abdelali Hammouti, Vincent Gagneur, Jérôme Reche, Guido Rademaker, G. Freychet, Guillaume Jullien, Julien Ducote, Patrice Gergaud, Delphine Le Cunff","doi":"10.1117/1.jmm.23.1.014002","DOIUrl":"https://doi.org/10.1117/1.jmm.23.1.014002","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"77 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140257199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of fine patterning lithography for panel level packaging","authors":"Hiromi Suda, Doug Shelton, Ken-ichiro Mori, Kensuke Shinoda, Y. Goto, Kosuke Urushihara","doi":"10.1117/1.jmm.23.1.011002","DOIUrl":"https://doi.org/10.1117/1.jmm.23.1.011002","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"27 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139452219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hyper NA EUV lithography: an imaging perspective","authors":"Inhwan Lee, Joern-Holger Franke, Vicky Philipsen, Kurt Ronse, Stefan De Gendt, Eric Hendrickx","doi":"10.1117/1.jmm.22.4.043202","DOIUrl":"https://doi.org/10.1117/1.jmm.22.4.043202","url":null,"abstract":"BackgroundTo print ever smaller features at high contrast projection lithography technology has evolved to shorter wavelength light and larger numerical aperture (NA). After enabling the extreme-ultraviolet (EUV) wavelength, the industry is looking into increasing the NA. At NA’s much higher than 0.55, new effects such as polarization will start to play a role, and larger impact of ultimate mask resolution and material interactions is expected. Already at NA 0.55, a small contrast loss is predicted due to the use of unpolarized light in the scanner. Further increasing the NA beyond 0.55 will exacerbate the contrast loss. In addition, the larger incidence angles on mask when the NA increases above 0.55, will further enhance the mask 3D (M3D) effects forcing additional mask changes.AimStudy the potential imaging challenges regarding NA scaling beyond 0.55 and identify if the imaging can still work at this higher NA and whether specific changes to the mask stack are required.ApproachWe study the polarization effects in detail and assess their impact quantitatively for a set of generic building blocks. To enable proper imaging at high incidence angles, new mask architectures that include changes in the EUV mask absorber and multilayer will have to be tested using rigorous simulations.ResultsThe current periodic Mo/Si multilayer concept is adequate to support 0.75 NA performance. For NA 0.85 aperiodic multilayers would be beneficial. Novel mask absorber materials currently being developed for the 0.33 and 0.55 NA systems are adequate to support 0.75 NA imaging. M3D phase effects slightly increase with NA but can be compensated by adjusting absorber n / k and thickness. Regions of interest in the absorber space remain low-n and high-k. NA 0.75 promises significant normalized image log slope (NILS) gain over NA 0.55 in the L/S pitch range of 20 to 30 nm even when considering M3D effects, existing multilayer periodicity, and no polarizer. For contact holes (CHs), NILS > 2.4 without polarizer can be achieved in both dark and bright mask tonalities for pitches 19 nm and above, even when considering M3D effects, existing multilayer periodicity, and no polarizer. Even if polarization control could provide significant NILS gain for lines and spaces, EUV polarizer may not be worth it in terms of the balance between contrast and throughput. Further validation should be done using a full stochastic resist model in the future. For CHs, the NILS gain possible by polarization is too small to warrant the lost dose.ConclusionsWe identified clear advantages of high NA imaging but found no significant blocking factors for the imaging of the investigated patterns (single pitch lines/spaces and CHs).","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"18 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134901101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Image intensity in photoresist near the resolution limit","authors":"Anthony Yen","doi":"10.1117/1.jmm.22.4.040501","DOIUrl":"https://doi.org/10.1117/1.jmm.22.4.040501","url":null,"abstract":"","PeriodicalId":499761,"journal":{"name":"Journal of micro/nanopatterning, materials, and metrology","volume":"17 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135216089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}