{"title":"An Implementation of Delay Testable Boundary Scan and Post-Bond Test Results in a 3D IC","authors":"Hiroyuki Yotsuyanagi;Keigo Takami;Masaki Hashizume","doi":"10.1109/JETCAS.2025.3591617","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3591617","url":null,"abstract":"A defective through-silicon via (TSV) may cause a small delay fault that is difficult to detect using conventional logic testing methods. Testing TSVs used for chip-to-chip interconnection in 3D stacked ICs is a challenging problem. We have proposed a delay testable boundary scan design that has an embedded time-to-digital converter that can measure the timing slack between the test clock and an incoming signal through a TSV. A prototype 3D stacked IC with this delay testable circuit was fabricated using TSVs of various diameters. The measurement results show that the proposed delay testable boundary scan can effectively identify both logic errors that occurred in TSVs with open defects due to a small diameter and outliers in delay through a TSV that have no logic errors.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 3","pages":"469-477"},"PeriodicalIF":3.8,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal Perspective Design and Analysis of Multi-Stacked Structures","authors":"Tianjian Liu;Jie Wu;Zhen Chen;Shujuan Liu;Zhongkai Jiang;Haoyang Peng;Zhandi Yang;Xing Hu;Dong Xie;Fang Dong;Yiqun Wang;Sheng Liu","doi":"10.1109/JETCAS.2025.3590877","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3590877","url":null,"abstract":"This paper investigates the thermal performance of multi-layer metal interconnects in three-dimensional (3D) stacked structures through finite element analysis (FEA). The 3D integrated circuit (3D IC) consists of five vertically stacked chips. The interconnections between the chips are achieved through through-silicon vias (TSVs), metal redistribution layers (RDLs), and hybrid bonding. Due to the complexity of the 3D IC structure, this work simplifies the detailed 3D IC model by employing equivalent models for each chip layer and the hybrid bonding structure. The study reveals that the portion of Cu significantly affects the thermal conductivity of the hybrid bonding structure, exhibiting quasi-linear dependence. Additionally, the misalignment between the upper and lower Cu pads decreases the thermal conductivity of the structure. Furthermore, equivalent models for different chip layers, including metal interconnect layers and TSVs, are constructed based on specific cases, and the equivalent thermal conductivities are extracted accordingly. Based on the equivalent results of each layer, the thermal conductivity of the complex 3D IC structure is ultimately determined. This work provides valuable results and guidance for the thermal design and practice of 3D IC.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 3","pages":"438-444"},"PeriodicalIF":3.8,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Heterogeneous Integration in Co-Packaged Optics","authors":"Yu-Tao Yang;Chih-Ming Hung","doi":"10.1109/JETCAS.2025.3590744","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3590744","url":null,"abstract":"Generative artificial intelligence (GAI) and Large Language Model (LLM) require data center to have higher bandwidth, and better energy efficiency. To achieve this, Co-packaged optics (CPO) is one of the future directions that leverages advanced packaging with integrated photonics. However, this tight integration complicates data center system design and multi-physics interactions, including electrical, optical, thermal, mechanical, and material aspects. In this paper, heterogeneous integration (HI) in CPO is discussed. Multi-physics packaging is exemplified with two cases. Challenges in HI technologies are reviewed and corresponding mitigation methods are provided, including 1) thermal crosstalk within the electrical domain and between the electrical and the optical interaction, 2) SIPI of wide-and-slow and narrow-and-fast channel links, and 3) pros and cons of interposer material. Integrated photonics part is introduced and is composed of 1) light sources, 2) optical coupling strategies, 3) fiber attach schemes with advanced packaging, and 4) integrated optical technologies, e.g. novel microlens, optical TSV, 3D waveguide, and optical 3DIC. This article aims to identify the key HI challenges in CPO and points out the potential solutions for future CPO system advancement.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 3","pages":"427-437"},"PeriodicalIF":3.8,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tassawar Hussain;Jaber Derakhshandeh;Tom Cochet;Ehsan Shafahian;Prathamesh Dhakras;Aksel Göhnermeier;Eric Beyne;Ingrid De Wolf
{"title":"Intermetallic Compounds (IMCs) Growth Investigation, Kinetic Parameter Analysis and Reliability Evaluation of In Solder Metal for 3D Integration Packaging","authors":"Tassawar Hussain;Jaber Derakhshandeh;Tom Cochet;Ehsan Shafahian;Prathamesh Dhakras;Aksel Göhnermeier;Eric Beyne;Ingrid De Wolf","doi":"10.1109/JETCAS.2025.3591363","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3591363","url":null,"abstract":"The increasing demand for higher functional density in microelectronics necessitates the miniaturization of interconnects in 3D integration, which presents challenges in processing and reliability. During fabrication and service life, interconnect microbumps remain in a non-equilibrium state, leading to interfacial reactions and atomic diffusion that drive intermetallic compounds (IMCs) growth and phase transformations, impacting the electrical, thermal, and mechanical properties, and affecting long-term reliability. With global restrictions on Pb-based solders, indium (In) has emerged as a viable low-melting-point alternative, especially for temperature-sensitive packaging. Understanding IMCs kinetics in In-based systems is essential for optimizing reliability. This study investigates the kinetics and phase transformation of IMCs in Ni/In and Cu/In systems under solid-state aging conditions using an in-situ resistance measurement technique. The approach overcomes the limitations of traditional scanning electron microscopy (SEM)-based analysis by enabling continuous monitoring of IMCs growth. The Ni/In system forms Ni<sub>3</sub>In<sub>7</sub> through a reaction-controlled mechanism with an activation energy of <inline-formula> <tex-math>$108~pm ~30$ </tex-math></inline-formula> kJ/mol. In the Cu/In system, CuIn<sub>2</sub> is formed at room temperature that undergoes a phase transformation to Cu<sub>11</sub>In<sub>9</sub> via a peritectoid reaction above <inline-formula> <tex-math>$107.5~^{circ }$ </tex-math></inline-formula>C of iso-thermal aging. The transformation shifts from a reaction-diffusion mixed controlled regime at <inline-formula> <tex-math>$110~^{circ }$ </tex-math></inline-formula>C (n <inline-formula> <tex-math>$approx ~0.73$ </tex-math></inline-formula>) to diffusion control between 120-<inline-formula> <tex-math>$140~^{circ }$ </tex-math></inline-formula>C (n <inline-formula> <tex-math>$approx ~0.45$ </tex-math></inline-formula>–0.62), and possibly to grain-boundary diffusion at <inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C (n <inline-formula> <tex-math>$approx ~0.19$ </tex-math></inline-formula>). The activation energy for CuIn<inline-formula> <tex-math>${}_{2} to $ </tex-math></inline-formula> Cu<sub>11</sub>In<sub>9</sub> transformation is <inline-formula> <tex-math>$196~pm ~82$ </tex-math></inline-formula> kJ/mol, indicating a higher energy barrier. These findings contribute to the development of low-temperature bonding techniques and fine-pitch interconnect optimization for future microelectronics packaging.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 3","pages":"392-403"},"PeriodicalIF":3.8,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang Liu;Feiyang Ma;Yuzhang Zang;Jun Wang;Zhifei Xu;Kai-Da Xu
{"title":"3-D Thermal Model With Lateral Thermal Resistance for Fast Thermal Analysis of Complex Stacked Structures","authors":"Yang Liu;Feiyang Ma;Yuzhang Zang;Jun Wang;Zhifei Xu;Kai-Da Xu","doi":"10.1109/JETCAS.2025.3590269","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3590269","url":null,"abstract":"With increasing density and complexity in 3-D integrated circuits, thermal management has become a major design challenge. In this paper, we present a precise 3-D thermal analysis model incorporating lateral thermal resistance, based on physical structure and material thermal properties. Analytical expressions for lateral thermal resistance and capacitance are derived, enabling accurate thermal modeling of complex 3-D stacked structures. We incorporate these analytical expressions into the RC-Tensorial Analysis Network (RC-TAN) framework, resulting in the 3-D RC-TAN method, which enhances computational efficiency while maintaining high accuracy. Simulation and experimental results demonstrate that the 3-D RC-TAN method outperforms traditional 1-D thermal analysis approaches, offering more than a 97% reduction in computation time compared with finite element method (FEM).","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 3","pages":"445-457"},"PeriodicalIF":3.8,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145061893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","authors":"","doi":"10.1109/JETCAS.2025.3573432","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3573432","url":null,"abstract":"","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 2","pages":"C3-C3"},"PeriodicalIF":3.7,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11050017","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems Publication Information","authors":"","doi":"10.1109/JETCAS.2025.3573428","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3573428","url":null,"abstract":"","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 2","pages":"C2-C2"},"PeriodicalIF":3.7,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11050009","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems Information for Authors","authors":"","doi":"10.1109/JETCAS.2025.3573430","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3573430","url":null,"abstract":"","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 2","pages":"361-361"},"PeriodicalIF":3.7,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11050010","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Guest Editorial Generative Artificial Intelligence Compute: Algorithms, Implementations, and Applications to CAS","authors":"Chuan Zhang;Naigang Wang;Jongsun Park;Li Zhang","doi":"10.1109/JETCAS.2025.3572258","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3572258","url":null,"abstract":"","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 2","pages":"144-148"},"PeriodicalIF":3.7,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11050018","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Generative AI Through CAS Lens: An Integrated Overview of Algorithmic Optimizations, Architectural Advances, and Automated Designs","authors":"Chuan Zhang;You You;Naigang Wang;Jongsun Park;Li Zhang","doi":"10.1109/JETCAS.2025.3575272","DOIUrl":"https://doi.org/10.1109/JETCAS.2025.3575272","url":null,"abstract":"Generative artificial intelligence (GenAI) has emerged as a pivotal focus in global innovation agendas, revealing transformative potential that extends beyond technological applications to reshape diverse societal domains. Given the fundamental dependency of GenAI deployment on circuits and systems (CAS), a co-evolutionary approach integrating both technological paradigms becomes imperative. This synergistic framework confronts three interrelated challenges: 1) developing deployment-ready GenAI algorithms, 2) engineering implementation-efficient CAS architectures, and 3) leveraging GenAI for autonomous CAS designs - each representing critical innovations vectors. Given the rapid advancement of GenAI-CAS technologies, a comprehensive synthesis has become an urgent priority across academia and industry. Consequently, this timely review systematically analyzes current advancements, provides integrative perspectives, and identifies emerging research trajectories. This review endeavors to serve both AI and CAS communities, thereby catalyzing an innovation feedback loop: GenAI-optimized CAS architectures in turn accelerate GenAI evolution through algorithm-hardware co-empowerment.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"15 2","pages":"149-185"},"PeriodicalIF":3.7,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11024158","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}