IEEE Journal on Emerging and Selected Topics in Circuits and Systems最新文献_第10页

Guest Editorial Dynamical Neuro-AI Learning Systems: Devices, Circuits, Architecture and Algorithms 客座编辑动态神经-人工智能学习系统：设备、电路、架构和算法

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3343932

Jason K. Eshraghian;Arindam Basu;Corey Lammie;Shih-Chii Liu;Priydarshini Panda

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IEEE Circuits and Systems Society Information 电气和电子工程师学会电路与系统协会信息

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3340568

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IEEE Journal on Emerging and Selected Topics in Circuits and Systems Publication Information 电气和电子工程师学会电路与系统新专题与选题期刊》出版信息

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3340572

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IEEE Journal on Emerging and Selected Topics in Circuits and Systems Information for Authors IEEE 《电路与系统新兴选题》期刊作者须知

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3340570

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TechRxiv: Share Your Preprint Research with the World! TechRxiv：与世界分享您的预印本研究成果！

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3345229

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Low-Loss and Compact Millimeter-Wave Silicon-Based Filters: Overview, New Developments in Silicon-on-Insulator Technology, and Future Trends 低损耗和紧凑型毫米波硅基滤波器：概览、绝缘体上硅技术的新发展和未来趋势

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-21 DOI: 10.1109/JETCAS.2023.3345476

Robert Nericua;Ke Wang;He Zhu;Roberto Gómez-García;Xi Zhu

{"title":"Low-Loss and Compact Millimeter-Wave Silicon-Based Filters: Overview, New Developments in Silicon-on-Insulator Technology, and Future Trends","authors":"Robert Nericua;Ke Wang;He Zhu;Roberto Gómez-García;Xi Zhu","doi":"10.1109/JETCAS.2023.3345476","DOIUrl":"https://doi.org/10.1109/JETCAS.2023.3345476","url":null,"abstract":"This paper presents an overview of Silicon-based millimeter-wave (mm-wave) passive devices for bandpass and bandstop filtering applications, while also reporting originally-conceived filter developments and future trends. First of all, the state-of-the-art on mm-wave low-loss bandpass filters (BPFs) is covered, and new BPF designs are shown. The engineered BPFs employ a center-tapped ring architecture with shunt-connected capacitors to realize a standard 2nd-order baseline BPF design, which is subsequently scaled to 30-GHz and 60-GHz operational frequencies. To increase the selectivity as well as the stopband rejection levels of this baseline BPF, the in-series cascade connection of the baseline BPF units is used for a higher-order BPF realization. For experimental-validation purposes, a total of four mm-wave BPFs based on these design strategies are implemented, fabricated in 45-nm Silicon-on-Insulator (SOI) complementary-metal-oxide-semiconductor-(CMOS) technology, and tested. Afterward, a review of Silicon-based-integrated bandstop filters (BSFs) operating in the mm-wave region is provided, which includes both reflective-type and reflectionless/absorptive filter realizations for RF-interference-suppression in highly-congested electromagnetic (EM) environments. Finally, future research trends in the Silicon-based-integrated filter area are discussed. They are expected to play a key role in the development of modern radio-frequency (RF) front-ends for emerging beyond 5G and EM-sensing scenarios.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"30-40"},"PeriodicalIF":4.6,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140123558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A 340-GHz THz Amplifier-Frequency-Multiplier Chain With 360° Phase-Shifting Range and its Phase Characterization 具有 360° 相移范围的 340 GHz 太赫兹放大器-频率-倍增器链及其相位特性分析

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-21 DOI: 10.1109/JETCAS.2023.3345358

Chun Wang;Pin-Chun Chiu;Chun-Lin Ko;Sheng-Hsiang Tseng;Chun-Hsing Li

{"title":"A 340-GHz THz Amplifier-Frequency-Multiplier Chain With 360° Phase-Shifting Range and its Phase Characterization","authors":"Chun Wang;Pin-Chun Chiu;Chun-Lin Ko;Sheng-Hsiang Tseng;Chun-Hsing Li","doi":"10.1109/JETCAS.2023.3345358","DOIUrl":"https://doi.org/10.1109/JETCAS.2023.3345358","url":null,"abstract":"A 340-GHz compact terahertz (THz) amplifier-frequency-multiplier chain (AMC) offering a full 360° phase shifting range for phased-array applications is proposed in this paper. The AMC comprises an 85 -GHz phase-shifter-embedded (\u0000<inline-formula> <tex-math>$Delta varphi $ </tex-math></inline-formula>\u0000-embedded) power amplifier (PA) and a high-output-power frequency quadrupler (FQ). The PA is equipped with multifunctional impedance matching networks (M-IMNs) that can simultaneously provide balun, impedance transformation, and phase-shifting functions. Analytic expressions have been derived to provide design guidelines for the M-IMNs. With the integrated M-IMNs, the proposed PA can concurrently deliver high output power and a phase shift exceeding 90° in a compact chip area. The proposed FQ can achieve optimal impedance matching at second and fourth harmonic frequencies, leading to the output power enhancement of 2.6 dB. Furthermore, the output phase of the PA is quadrupled by the FQ, resulting in the output signal of the AMC with a full 360° phase-shifting capability. A measurement setup for characterizing the phase of a THz signal is also presented. Implemented in a 40-nm CMOS technology without ultra-thick metal layers available, the proposed THz AMC achieves a peak output power of −3.5 dBm at 368 GHz with a conversion gain of 1.8 dB and a 3-dB bandwidth from 340 to 376 GHz. The output phase can continuously vary over 360° within the 324 to 346 GHz frequency range. The phase noise of the output signal at 346 GHz is −105 dBc/Hz at a 10-MHz offset frequency. The proposed 340-GHz AMC consumes 215.1 mW from a 0.9-V supply.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"52-66"},"PeriodicalIF":4.6,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140123406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A 11.3–16.6-GHz VCO With Constructive Switched Magnetic Coupling in 65-nm CMOS 采用 65 纳米 CMOS 的 11.3-16.6-GHz VCO，具有构造性开关磁耦合功能

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-18 DOI: 10.1109/JETCAS.2023.3344510

Yuetong Lyu;Changwenquan Song;Pei Qin;Liang Wu

{"title":"A 11.3–16.6-GHz VCO With Constructive Switched Magnetic Coupling in 65-nm CMOS","authors":"Yuetong Lyu;Changwenquan Song;Pei Qin;Liang Wu","doi":"10.1109/JETCAS.2023.3344510","DOIUrl":"https://doi.org/10.1109/JETCAS.2023.3344510","url":null,"abstract":"Conventional transformer-based magnetic tuning has demonstrated dual-band or even multi-band operation for voltage-controlled oscillators (VCOs). However, the destructive magnetic coupling employed introduces implicit loss to the transformer thus degrading its quality factor (Q), and achieves a continuous frequency coverage resulting in inferior performance. To address this issue, this paper proposes a constructive switched magnetic coupling (CSMC) technique, realizing dual-band operation with the Q improvement into one band due to the in-phase coupling and the explicit switch. For validation, a transformer employing the CSMC technique is designed and deployed in a dual-band VCO design. Fabricated in a 65-nm CMOS process, the VCO is measured with an oscillation frequency range of 37.8%, from 11.3 to 16.6 GHz, while consuming 2.5-mW from a 0.65-V voltage supply. Within the entire frequency coverage, the measured phase noise ranges from −129.6 to −123.7 at 10-MHz offset, resulting in FoM of 186-192.1 dBc/Hz. The core area of the chip is \u0000<inline-formula> <tex-math>$0.43times 0.25$ </tex-math></inline-formula>\u0000 mm2 excluding pads.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"133-141"},"PeriodicalIF":4.6,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140123365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Compact Transverse-Resonance Low-Pass Filter With Wide Stop-Band Rejection Implemented in Gallium Arsenide Technology 利用砷化镓技术实现具有宽带抑制功能的紧凑型横向谐振低通滤波器

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-07 DOI: 10.1109/JETCAS.2023.3340957

Sudipta Chakraborty;Gayatri Neeharika Sreepada;Michael Heimlich;Anand K. Verma

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Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor 利用 ECRAM Memristor 的复杂波动性构建时间曲面

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-11-16 DOI: 10.1109/JETCAS.2023.3330832

Marco Rasetto;Qingzhou Wan;Himanshu Akolkar;Feng Xiong;Bertram Shi;Ryad Benosman

{"title":"Building Time-Surfaces by Exploiting the Complex Volatility of an ECRAM Memristor","authors":"Marco Rasetto;Qingzhou Wan;Himanshu Akolkar;Feng Xiong;Bertram Shi;Ryad Benosman","doi":"10.1109/JETCAS.2023.3330832","DOIUrl":"https://doi.org/10.1109/JETCAS.2023.3330832","url":null,"abstract":"Memristors have emerged as a promising technology for efficient neuromorphic architectures owing to their ability to act as programmable synapses, combining processing and memory into a single device. Although they are most commonly used for static encoding of synaptic weights, recent work has begun to investigate the use of their dynamical properties, such as Short Term Plasticity (STP), to integrate events over time in event-based architectures. However, we are still far from completely understanding the range of possible behaviors and how they might be exploited in neuromorphic computation. This work focuses on a newly developed Li\u0000<inline-formula> <tex-math>$_{text {x}}$ </tex-math></inline-formula>\u0000WO\u0000<inline-formula> <tex-math>$_{text {3}}$ </tex-math></inline-formula>\u0000-based three-terminal memristor that exhibits tunable STP and a conductance response modeled by a double exponential decay. We derive a stochastic model of the device from experimental data and investigate how device stochasticity, STP, and the double exponential decay affect accuracy in a hierarchy of time-surfaces (HOTS) architecture. We found that the device’s stochasticity does not affect accuracy, that STP can reduce the effect of salt and pepper noise in signals from event-based sensors, and that the double exponential decay improves accuracy by integrating temporal information over multiple time scales. Our approach can be generalized to study other memristive devices to build a better understanding of how control over temporal dynamics can enable neuromorphic engineers to fine-tune devices and architectures to fit their problems at hand.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"13 4","pages":"877-888"},"PeriodicalIF":4.6,"publicationDate":"2023-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10320285","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139060149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0