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Plasma-driven 1D to 2D nanomaterial phase transition 等离子体驱动的一维到二维纳米材料相变
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-06-07 DOI: 10.1016/j.mtnano.2025.100645
Martin Košiček , Oleg Baranov , Janez Zavašnik , Uroš Cvelbar
{"title":"Plasma-driven 1D to 2D nanomaterial phase transition","authors":"Martin Košiček ,&nbsp;Oleg Baranov ,&nbsp;Janez Zavašnik ,&nbsp;Uroš Cvelbar","doi":"10.1016/j.mtnano.2025.100645","DOIUrl":"10.1016/j.mtnano.2025.100645","url":null,"abstract":"<div><div>The increasing demand for novel nanomaterials in nanotechnology requires innovative techniques to adapt their properties and morphologies, highlighting the importance of strategies for controlled conversions between different material morphologies. This research reveals a unique plasma-assisted anion-exchange phase transformation which facilitates the conversion from 1D model of copper oxide nanowires into 2D copper sulfide. Our investigation reveals that plasma-assisted sulfurization triggers the onset of 2D structure evolution from the original nanowire, followed by the complete conversion of the original 1D copper oxide into 2D copper sulfide. This dimensionality transformation is likely driven by the accumulation of surface charges in the plasma environment, particularly increased in regions of heightened curvatures in the nascent copper sulfide phase. The enhanced electric field in these zones directs the flow of charged plasma species to these specific regions. In addition, the preferential adsorption of sulfur species at the edges of the nanoplates drives the diffusion of copper ions from the core of the nanowires outward to the edges of the forming nanoplates, where sulfurization predominantly occurs. These suggestions were supported by theoretical modeling of the processes. The morphology of the transformed nanowires depends on the original diameter of the nanowires and the duration of the treatment. Finally, the study highlights the potential of plasma-assisted techniques for advanced processing of nanomaterials, enabling precise and distinct nanomodifications.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"31 ","pages":"Article 100645"},"PeriodicalIF":8.2,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144262876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Continuous synergistic double imprinting idea based on MXene-nanocomposite membrane for efficient identification and isolation 基于mxene -纳米复合膜的连续协同双印迹思想高效鉴定和分离
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-06-06 DOI: 10.1016/j.mtnano.2025.100642
Ming Yan , Zequan Diao , Rongxin Lin , Hang Cui , Faguang Ma , Yilin Wu
{"title":"Continuous synergistic double imprinting idea based on MXene-nanocomposite membrane for efficient identification and isolation","authors":"Ming Yan ,&nbsp;Zequan Diao ,&nbsp;Rongxin Lin ,&nbsp;Hang Cui ,&nbsp;Faguang Ma ,&nbsp;Yilin Wu","doi":"10.1016/j.mtnano.2025.100642","DOIUrl":"10.1016/j.mtnano.2025.100642","url":null,"abstract":"<div><div>Ti<sub>3</sub>C<sub>2</sub>Tx (MXene) has been highly sought after by researchers around the world due to its typical two-dimensional layered structural features and abundant surface groups. Herein, we fix MXene on the membrane by means of a decompression filtration device, and the formation of interlayer domain-limited channels helps to enhance the construction efficiency of imprinting sites. Herein, Ag-PDA@MXene@PDA@SiO<sub>2</sub>-PVDF double imprinted hybrid matrix membranes (APMS-DIMs) were prepared using a synergistic double-imprinting strategy and effectively utilized to identify and isolate artemisinin (Ars). Above all, SiO<sub>2</sub>-PVDF nanofibre membranes (NMs) was synthesized via electrostatic spinning and self-polymerization of dopamine (PDA) was carried out to construct the first layer of imprint. Meanwhile, PDA enhanced the oxidation resistance of MXene and the interfacial stability of SiO<sub>2</sub>-PVDF NMs. The second layer imprint was then constructed on the surface of the MXene and within the interlayer channels. When Ars passed through the membrane, it was specifically recognized and adsorbed several times by the bilayer blotting sites constructed using the synergistic double imprinting strategy, which significantly enhanced the selective adsorption efficiency of Ars. Therefore, the rebinding ability (73.15 mg g<sup>−1</sup>) and selectivity factors (<em>β</em><sub>Artesunate/Ars</sub> and <em>β</em><sub>Dihydroartemisinin/Ars</sub> were 4.47 and 3.93) of the membrane to Ars have been greatly improved. This study demonstrated that precise recognition sites were successfully constructed on APMS-DIMs with high levels of stability and recombination ability, which have potential for practical application.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"31 ","pages":"Article 100642"},"PeriodicalIF":8.2,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144241517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Van der Waals contacts and layer-dependent Fermi level pinning at WSe2/metal interfaces WSe2/金属界面上的范德华接触和依赖于层的费米能级钉钉
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-06-06 DOI: 10.1016/j.mtnano.2025.100646
Xiaohui Hu , Xin Pei , Tao Xu , Arkady V. Krasheninnikov , Litao Sun
{"title":"Van der Waals contacts and layer-dependent Fermi level pinning at WSe2/metal interfaces","authors":"Xiaohui Hu ,&nbsp;Xin Pei ,&nbsp;Tao Xu ,&nbsp;Arkady V. Krasheninnikov ,&nbsp;Litao Sun","doi":"10.1016/j.mtnano.2025.100646","DOIUrl":"10.1016/j.mtnano.2025.100646","url":null,"abstract":"<div><div>Strong Fermi level pinning (FLP) at the interface between WSe<sub>2</sub> and metal electrodes can give rise to high Schottky barriers, which would degrade the performance of electronic device. Therefore, the weak FLP is desirable as it allows decreasing Schottky barrier height (SBH) and achieving the low contact resistance. Herein, we demonstrate that the van der Waals (vdW) contacts between WSe<sub>2</sub> and metals can greatly weaken the FLP and affect SBH. As compared to the direct contacts, the fewer metal-induced gap states and smaller interface dipoles are observed in WSe<sub>2</sub>/metal vdW contacts, which leads to the reduced FLP effect. In addition, we found that the FLP strength is also dependent on the number of WSe<sub>2</sub> layers. Furthermore, we analyze the origin of the pinning factor deviation from Schottky-Mott limit in the WSe<sub>2</sub>/metal vdW contacts and find that the deviation originates from the interface potential difference and Fermi-level shift. Benefiting from the weak FLP, the low n-type and p-type Schottky and Ohmic contacts can be obtained in the WSe<sub>2</sub>/metal vdW contacts by choosing metal electrodes and number of WSe<sub>2</sub> layers. These findings illustrate that creating vdW contacts can be an effective approach for developing high performance ambipolar WSe<sub>2</sub>-based electronic devices.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"31 ","pages":"Article 100646"},"PeriodicalIF":8.2,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144279279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation and 3D network structure optimization of SiC and SiC@Fe3Si nanofibers for enhanced electromagnetic wave absorption SiC和SiC@Fe3Si纳米纤维增强电磁波吸收的制备及三维网络结构优化
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-05-27 DOI: 10.1016/j.mtnano.2025.100644
Dandan Xiang , Qinchuan He , Congmin Fan , Yiqun Wang , Xuemin Yin , Changcong Wang
{"title":"Preparation and 3D network structure optimization of SiC and SiC@Fe3Si nanofibers for enhanced electromagnetic wave absorption","authors":"Dandan Xiang ,&nbsp;Qinchuan He ,&nbsp;Congmin Fan ,&nbsp;Yiqun Wang ,&nbsp;Xuemin Yin ,&nbsp;Changcong Wang","doi":"10.1016/j.mtnano.2025.100644","DOIUrl":"10.1016/j.mtnano.2025.100644","url":null,"abstract":"<div><div>The Electromagnetic wave absorbing materials (EWAM) prepared by coupling magnetic elements with SiC nanofibers have excellent comprehensive characteristics, including ample network free spaces, numerous interfacial polarization sites and enhanced dielectric dissipation capacity, exhibiting critical potential for 5G communication systems and artificial intelligence applications. Based on the design of three-dimensional (3D) network structure, nanofiber precursors were prepared by electrostatic spinning, and then SiC nanofibers and SiC@Fe<sub>3</sub>Si composite nanofibers were synthesized by combination with carbothermal reduction reaction. The effective absorption bandwidth of SiC nanofibers reaches up to 6.16 GHz and the minimum reflection loss (RL<sub>min</sub>) is −66.07 dB. After the introduction of magnetic components, the RL<sub>min</sub> of SiC@Fe<sub>3</sub>Si composite nanofibers (SC3-F) is increased to −73.75 dB. Scanning electron microscopy and electromagnetic parameters demonstrate the synergistic mechanism of interfacial/dipole polarization and magnetic coupling, revealing its important contribution to multiple reflections and impedance matching. In addition, further theoretical evaluations of the different domains were carried out through CST analog simulations, illustrating the effect of the materials on radar stealth. This study provides new ideas for the design of new-generation high-performance EWAM materials and lays the foundation for their extensive development in multifunctional applications.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"30 ","pages":"Article 100644"},"PeriodicalIF":8.2,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Genomic instability and shear stress influence quantum dot-induced endothelial cell responses and gene expression 基因组不稳定性和剪切应力影响量子点诱导的内皮细胞反应和基因表达
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-05-26 DOI: 10.1016/j.mtnano.2025.100641
Yasmin Abdelkader , Mahmoud Abdelkarim , Madhumita Suresh , Tulio J. Lopera , Simranpreet Dhaliwal , Shahla Shojaei , Lucas J. Pope , Qian Liu , Pingzhao Hu , Hisashi Haga , Kelsie L. Thu , Simona Giunta , Seiichiro Ishihara , Max Anikovskiy , Hagar I. Labouta
{"title":"Genomic instability and shear stress influence quantum dot-induced endothelial cell responses and gene expression","authors":"Yasmin Abdelkader ,&nbsp;Mahmoud Abdelkarim ,&nbsp;Madhumita Suresh ,&nbsp;Tulio J. Lopera ,&nbsp;Simranpreet Dhaliwal ,&nbsp;Shahla Shojaei ,&nbsp;Lucas J. Pope ,&nbsp;Qian Liu ,&nbsp;Pingzhao Hu ,&nbsp;Hisashi Haga ,&nbsp;Kelsie L. Thu ,&nbsp;Simona Giunta ,&nbsp;Seiichiro Ishihara ,&nbsp;Max Anikovskiy ,&nbsp;Hagar I. Labouta","doi":"10.1016/j.mtnano.2025.100641","DOIUrl":"10.1016/j.mtnano.2025.100641","url":null,"abstract":"<div><div>Little is known about endothelial cell responses to nanoparticles under conditions simulating dysfunctional endothelium, a hallmark of vascular diseases, cancer, and aging. Endothelial genomic abnormalities and shear stress on the endothelial cells due to blood flow are key components of this microenvironment. Using organ-on-a-chip technologies and transcriptomics, we investigated the effects of genomic instability and shear stress on endothelial cell-level and RNA-level responses to model nanoparticles, CdSe/ZnS and InP/ZnS quantum dots (QDs). QDs were selected for their diagnostic potential, photostability enabling cellular tracking, and high uptake attributed to their ultrasmall size (13.9 and 3.9 nm). To model genomic instability, HUVEC cells were treated with monastrol (mt-HUVECs), and both control and mt-HUVEC models were exposed to 5 nM QD concentration. Transcriptomic analysis showed that Cdc20 gene was more downregulated in mt-HUVECs under dynamic flow (−5.68 vs dynamic HUVECs; −6.4 vs static mt-HUVECs), indicating a synergistic effect of flow and genomic instability on cell cycle suppression. Exposure to CdSe/ZnS QDs under dynamic conditions led to downregulation of the adherens junction pathway, which is consistent with the observed higher uptake and upregulation of heat shock and inflammatory response pathways. In contrast, InP/ZnS QDs upregulated tight junctions, explaining their lower uptake. Both QDs induced apoptotic pathway upregulation, with CdSe/ZnS QDs having more detrimental effects on viability. Combining genomic instability and shear stress resulted in different cell phenotypes that led to distinct cell responses and cell uptake of QDs. These findings guide future studies to better characterize endothelial responses to nanoparticles under biologically relevant conditions.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"31 ","pages":"Article 100641"},"PeriodicalIF":8.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144194924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effectiveness of carbon nanomaterials as lubricant additives: Recent review 碳纳米材料作为润滑油添加剂的有效性研究进展
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-05-26 DOI: 10.1016/j.mtnano.2025.100643
Anthony Chukwunonso Opia , Mohd Fadzli Bin Abdollah , Samion Syahrullail , Hilmi Amiruddin , Chinedu Stanley Mamah , Ibham Veza
{"title":"Effectiveness of carbon nanomaterials as lubricant additives: Recent review","authors":"Anthony Chukwunonso Opia ,&nbsp;Mohd Fadzli Bin Abdollah ,&nbsp;Samion Syahrullail ,&nbsp;Hilmi Amiruddin ,&nbsp;Chinedu Stanley Mamah ,&nbsp;Ibham Veza","doi":"10.1016/j.mtnano.2025.100643","DOIUrl":"10.1016/j.mtnano.2025.100643","url":null,"abstract":"<div><div>Wear and friction are unavoidable in mechanical motion, leading to energy loss, low productivity, damage to machine parts, and high operating costs; therefore, the use of appropriate lubricants is essential. To solve these unwanted conditions and protect the environment, lubricants containing nano-additives could effectively perform the operations. As a result, it is imperative to understand the effectiveness trajectory of various kinds of carbon nanomaterials towards enhancing lubricating performance. Therefore, this review paper compiles the advancement and contributions of carbon nanomaterials to tribology in recent years. The development of different carbon nanotubes and nanoparticles was investigated, and studies conducted between 2010 and 2024 showed notable improvements over time. The review identified the potential influencing factors that impact the tribological responsiveness of carbon nanomaterials, including the nano-additives' dispersion in lubricants, effects of their microstructure and particle sizes. This paper provides a summary of the accomplishments of graphene, fullerene, carbon nanotubes, carbon nanodiamonds, carbon nano-onions and carbon spheres in their application as lubricant additives. A thorough analysis of graphene and carbon nanotubes on their exceptional lubricant additives was conducted. According to reports in the literature, graphene is the most well-known and extensively utilized carbon nanomaterial for exceptional tribological qualities. Significant decreases in wear and friction are facilitated by its capacity to smooth surfaces, create protective layers, and act as a third-body lubricant. To fully utilize graphene's potential in a variety of tribological applications, further research into functionalization and dispersion processes is essential thus providing insight into their synthesis and design.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"30 ","pages":"Article 100643"},"PeriodicalIF":8.2,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New horizons for electromagnetism of functional bionanomaterials 功能性生物纳米材料的电磁学研究新进展
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-05-25 DOI: 10.1016/j.mtnano.2025.100640
C. Brosseau
{"title":"New horizons for electromagnetism of functional bionanomaterials","authors":"C. Brosseau","doi":"10.1016/j.mtnano.2025.100640","DOIUrl":"10.1016/j.mtnano.2025.100640","url":null,"abstract":"<div><div>Electro-mechano-biology (EMB) develops and examines different uses of electric excitation that span the electromagnetic spectrum from dc to microwaves to study and control mechanical deformation of cells, focusing on the discovery and application of new phenomena. In this work, we highlight this approach and its limitations to understand the cross-properties between electrical and mechanical modeling of functional biomaterials. Several illustrations based on multiphysics multiscale finite element simulations are proposed. Collectively, these data have important phenomenological implications for modeling the electromechanical effects of cell and nucleus morphology in a confined geometry. We discuss the current challenges for future developments in the analysis of electromagnetism of functional bionanomaterials.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"30 ","pages":"Article 100640"},"PeriodicalIF":8.2,"publicationDate":"2025-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma-irradiated hafnia ferroelectrics for high-performance flexible thin film transistors 用于高性能柔性薄膜晶体管的等离子体辐照半铁电体
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-05-23 DOI: 10.1016/j.mtnano.2025.100639
Hyun Yeol Rho , Arindam Bala , Anamika Sen , Uisik Jeong , Jimin Kim , Pavan Pujar , Sunkook Kim
{"title":"Plasma-irradiated hafnia ferroelectrics for high-performance flexible thin film transistors","authors":"Hyun Yeol Rho ,&nbsp;Arindam Bala ,&nbsp;Anamika Sen ,&nbsp;Uisik Jeong ,&nbsp;Jimin Kim ,&nbsp;Pavan Pujar ,&nbsp;Sunkook Kim","doi":"10.1016/j.mtnano.2025.100639","DOIUrl":"10.1016/j.mtnano.2025.100639","url":null,"abstract":"<div><div>Integrating unconventional HfO<sub>2</sub>-based ferroelectrics in thin film transistors (TFTs) has proven effective in enhancing performance by stabilizing negative capacitance (NC). This is achieved by incorporating the ferroelectric in series with a high-permittivity dielectric as a passive TFT component. However, implementing this on flexible, temperature-sensitive substrates presents significant challenges. The primary focus in TFTs on flexible substrates is their fabrication with a considerably low thermal budget to avoid damaging the underlying substrate. Herein, we introduce an approach to stabilize the desired ferroelectric polar phase of hafnium zirconium oxide (Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>, HZO) through superficial plasma treatment in the argon environment. Plasma energizes Ar<sup>+</sup> ions, whose bombardment induces oxygen vacancies, thereby stabilizing the desired orthorhombic phase at low temperatures. The IGZO-channel TFTs incorporating HZO/HfO<sub>2</sub> passive stacks exhibit a substantial enhancement in subthreshold swing (SS), achieving a 72 % reduction from 147 mV/dec to 41 mV/dec, along with a notable increase in on-state currents (<em>I</em><sub>on</sub>) compared to conventional TFTs utilizing only HfO<sub>2</sub> dielectrics. The field-effect mobility (μ) significantly improves from 5.7 ± 0.2 to 28.8 ± 6.2 cm<sup>2</sup>/V·s. Flexible TFTs fabricated on polyimide substrates also show excellent mechanical stability, maintaining consistent <em>I</em><sub>on</sub> even after 10,000 bending cycles. Moreover, these TFTs exhibit enhanced μ of 72 ± 13.5 cm<sup>2</sup>/V·s in the flat state and 33.9 ± 3.8 cm<sup>2</sup>/V·s under bending—both notably higher than those of TFTs without the HZO-assisted NC effect.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"31 ","pages":"Article 100639"},"PeriodicalIF":8.2,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-situ CVD grown WS2-MoS2 lateral heterostructure with alloyed Interface: Strong photoluminescence enhancement and high on-off ratio field effect transistors 原位CVD生长具有合金界面的WS2-MoS2横向异质结构:强光致发光增强和高开关比场效应晶体管
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-05-22 DOI: 10.1016/j.mtnano.2025.100638
Abdul Kaium Mia , Sourav Dey , Lubomir Vanco , Viliam Vretenar , P.K. Giri
{"title":"In-situ CVD grown WS2-MoS2 lateral heterostructure with alloyed Interface: Strong photoluminescence enhancement and high on-off ratio field effect transistors","authors":"Abdul Kaium Mia ,&nbsp;Sourav Dey ,&nbsp;Lubomir Vanco ,&nbsp;Viliam Vretenar ,&nbsp;P.K. Giri","doi":"10.1016/j.mtnano.2025.100638","DOIUrl":"10.1016/j.mtnano.2025.100638","url":null,"abstract":"<div><div>The semiconducting 2D transition metal dichalcogenides (TMDs) have gained substantial attention, though the progress in their lateral heterostructures (HS) and in-situ growth for electronic and optoelectronic applications has been very limited. Herein, we report a single-step in-situ chemical vapor deposition growth of bilayer WS<sub>2</sub>-MoS<sub>2</sub> lateral HS, which ensures a clean diffused interface between WS<sub>2</sub> and MoS<sub>2,</sub> enabling efficient charge transport. The spatial Raman, photoluminescent (PL), and Auger mapping of in-situ WS<sub>2</sub>-MoS<sub>2</sub> lateral HS shows a clear transition from pure WS<sub>2</sub> to pure MoS<sub>2</sub> region through a graded WS<sub>(1-x)</sub>Mo<sub>x</sub>S<sub>2</sub> alloy interface. The composition and the width of the alloy interface could be tuned by careful choice of the proportion of precursor materials and by tuning the growth parameters. Spatially resolved PL spectra and PL mapping reveal a strongly enhanced (more than one order of magnitude) PL intensity in the HS interface attributed to the strain-induced bandstructure modification in the alloyed interface. Interestingly, the alloyed interface in the lateral HS also dramatically improves the electronic properties, resulting in an on-off ratio of 10<sup>8</sup> in the fabricated field effect transistor, which is two orders of magnitude higher than their individual counterpart. These results on lateral HS are significant, and they pave the way to synthesize other different HSs for future electronic devices and integrated circuits.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"31 ","pages":"Article 100638"},"PeriodicalIF":8.2,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructure evolution and stability of directionally solidified superalloys with varying γ′ phase forming elements 不同γ′相形成元素定向凝固高温合金的组织演变与稳定性
IF 8.2 2区 材料科学
Materials Today Nano Pub Date : 2025-05-15 DOI: 10.1016/j.mtnano.2025.100637
Yunpeng Fan , Xinbao Zhao , Lijie Qiao , Yang Song , Yu Zhou , Yuan Cheng , Shuli Zeng , Quanzhao Yue , Wanshun Xia , Yuefeng Gu , Ze Zhang
{"title":"Microstructure evolution and stability of directionally solidified superalloys with varying γ′ phase forming elements","authors":"Yunpeng Fan ,&nbsp;Xinbao Zhao ,&nbsp;Lijie Qiao ,&nbsp;Yang Song ,&nbsp;Yu Zhou ,&nbsp;Yuan Cheng ,&nbsp;Shuli Zeng ,&nbsp;Quanzhao Yue ,&nbsp;Wanshun Xia ,&nbsp;Yuefeng Gu ,&nbsp;Ze Zhang","doi":"10.1016/j.mtnano.2025.100637","DOIUrl":"10.1016/j.mtnano.2025.100637","url":null,"abstract":"<div><div>The microstructure evolution and stability of the directionally solidified superalloys with various contents of γ′ phase forming elements were investigated. The increase of mass fraction of γ′ phase forming elements from Al: 5 %, Ti: 1 % to Al: 6 %, Ti:2 % dramatically increased the area fraction of eutectic and the inhomogeneity. However, the segregation ratio decreased with the increase of γ′ phase forming elements, owing to the discharge of W and Mo. After heat treatments, the addition of γ′ phase forming elements led to the formation of a four-layer layered structure, and the inhomogeneity could not be eliminated. The increased contents of γ′ phase forming elements were detrimental to the structural stability, promoted the coarsening of the γ′ phase, and increased the mismatch stress between the two phases in the dendrite.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"30 ","pages":"Article 100637"},"PeriodicalIF":8.2,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144106692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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