Materials Today Nano最新文献

{"title":"Van der Waals heterostructures for advanced infrared photodetection: Innovations in stability and spectral range","authors":"Aditya Kushwaha ,&nbsp;Manasvi Raj ,&nbsp;Anshul ,&nbsp;Rahul Kumar ,&nbsp;Neeraj Goel","doi":"10.1016/j.mtnano.2025.100582","DOIUrl":"10.1016/j.mtnano.2025.100582","url":null,"abstract":"<div><div>Infrared (IR) photodetectors have gained significant attention in recent years due to their crucial role in a variety of applications, including night vision, military technology, communication, remote temperature sensing, and biomedical imaging. Conventional IR photodetector materials are widely used for commercial purposes and can operate at room temperature. However, they have limitations, including susceptibility to noise, complex manufacturing processes, and limited spectral response range, which restrict their suitability for diverse applications. The emergence of two-dimensional (2D) materials offers new opportunities for developing high-performance IR photodetectors due to their strong light-matter interaction, tunable bandgap, broad spectral response, and low power dissipation. Nevertheless, weak light absorption and short carrier lifetimes limit the use of individual 2D materials in IR photodetectors. This review highlights how van der Waals (vdW) heterostructures—formed by integrating 2D materials with other materials such as zero-dimensional (0D) nanoparticles, one-dimensional (1D) nanowires (NWs), or bulk three-dimensional (3D) materials—can overcome these limitations, leading to enhanced IR photodetector performance. The vdW heterostructures allow for tunable spectral responses and flexible device configurations, which are unattainable with conventional semiconductors. This review discusses recent advancements in vdW heterostructure-based IR photodetectors, focusing on structural and architectural innovations necessary to meet the growing demand for intelligent, integrated, and multidimensional recognition systems. By examining novel combinations of 2D materials with other materials, this paper provides a pathway to improved stability, faster response times, and better ambient performance. This review also addresses challenges in integrating 2D materials with other structures and offers insights into future directions for developing high-performance IR photodetectors using vdW heterostructures, ultimately aiming to bridge gaps in current technology and push forward the boundaries of IR photodetection.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100582"},"PeriodicalIF":8.2,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143350253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A study on the mechanical properties of polycrystalline aluminum nitride based on molecular dynamics simulation","authors":"Rui Li ,&nbsp;Chunmin Cheng ,&nbsp;Fang Dong ,&nbsp;Gai Wu ,&nbsp;Wei Shen ,&nbsp;Kang Liang ,&nbsp;Shizhao Wang ,&nbsp;Sheng Liu","doi":"10.1016/j.mtnano.2025.100581","DOIUrl":"10.1016/j.mtnano.2025.100581","url":null,"abstract":"<div><div>In the actual preparation process of surface acoustic devices and power devices, AlN mostly has a polycrystalline structure, and the average grain size has a significant effect on its physical properties. In addition, owing to its high temperature resistance, AlN has a wide operating temperature range. Therefore, in order to reveal the effect of average grain size and temperature on the variation of microscopic mechanical properties of polycrystalline AlN, the molecular dynamics method was adopted to study the tensile process of polycrystalline AlN. The results indicated that the elastic modulus and lattice phase transition of polycrystalline AlN are closely related to the average grain size and loading temperature. The larger the average grain size, the higher the elastic modulus. As an important location for crack initiation and propagation, grain boundary plays an important role in the occurrence of high strain failure and lattice phase transition in the system under loading. In addition, the brittle fracture process of polycrystalline AlN is changed to a certain extent with the increase of temperature, and the fracture toughness is gradually enhanced.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100581"},"PeriodicalIF":8.2,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143354402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recycled facial tissue derived carbon fiber decorated with cobalt-nickel nanoparticles promotes electromagnetic wave absorption performance","authors":"Yu Xiao ,&nbsp;Liyuan Liu ,&nbsp;Xiubo Xie ,&nbsp;Guohua Fan ,&nbsp;Chuanxin Hou ,&nbsp;Wei Du ,&nbsp;Fushan Li","doi":"10.1016/j.mtnano.2025.100580","DOIUrl":"10.1016/j.mtnano.2025.100580","url":null,"abstract":"<div><div>Designing and preparing electromagnetic wave absorbing materials (EWAM) with the characteristic of lightweight, wide frequency response and thin matched thickness is urgent needs and still exist challenge. Herein, EWAM composites of cobalt-nickel nanoparticles and carbon fibers derived from recycled facial tissue (NCFT) was constructed via the solvent-heating and heat-treatment process, which promote waste recycling and obtain satisfactory electromagnetic wave (EMW) absorption properties. Cobalt-nickel nanoparticles were homogeneously dispersed in the prepared carbon fiber matrix, resulting in a composite material with highly efficient EMW absorption properties. Experimental results show that the prepared composites exhibit excellent EMW-absorbing properties in the 2–18 GHz band, and a minimum reflection loss (RL_min) of −40.22 dB and an effective absorption bandwidth (EAB) of 4.5 GHz are obtained with a matched thickness of 1.3 mm. Furthermore, effective absorption for the C-band can be achieved with a thickness of 3.5 mm by adjusting the absorber's thickness. Through the comprehensive analysis of the microstructure and electromagnetic properties of the composites, it is found that the introduction of cobalt-nickel nanoparticles significantly enhances the dielectric loss and magnetic loss, and improves the absorption efficiency of electromagnetic waves. Besides, the radar cross section (RCS) simulation results illustrate the dissipation capability of NCFT composites in practical application scenarios. This study demonstrates the potential of NCFT in electromagnetic interference protection, also emphasizes the feasibility of using waste resources to prepare high value-added functional materials, providing new ideas and methods for environmental protection and resource reuse.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100580"},"PeriodicalIF":8.2,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Progress and prospect of terahertz detectors based on two-dimensional materials","authors":"Yingying Niu ,&nbsp;Nianlong Ding ,&nbsp;Weidong Wu ,&nbsp;Maixia Fu ,&nbsp;Jianghui Hu ,&nbsp;Mengzhe Yu ,&nbsp;Zichen Guo ,&nbsp;Fei Zhou ,&nbsp;Xiaozhen Ren ,&nbsp;Yingxin Wang","doi":"10.1016/j.mtnano.2025.100570","DOIUrl":"10.1016/j.mtnano.2025.100570","url":null,"abstract":"<div><div>Terahertz (THz) wave is a kind of electromagnetic wave with unique physical properties. Therefore, THz technology has a broad application prospect including fundamental science, biomedicine, security imaging and communication. THz detectors are key component of THz systems, and high-performance THz detectors are crucial for the practical application of THz technology. The discovery of two-dimensional(2D) materials, such as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDCs), and black phosphorus (BP), has triggered an unprecedented interest in 2D material-based THz detectors. Because of their unique band structures and extraordinary photoelectric properties, the versatility of 2D materials makes it possible to achieve sensitive THz detection at room temperature. Herein, the recent progress on 2D material-based THz detectors is reviewed. Firstly, the basic properties of 2D materials, including the interaction with THz wave, are introduced. Then the fundamental principles of THz detection mechanisms are thoroughly discussed. Next, the major progresses of 2D material-based THz detectors in the past decades as well as the present methods to improve detector performance are summarized. After that, a comparison of 2D material-based detectors and commercial ones is introduced. Finally, the remaining challenges and perspectives of 2D material-based THz detectors are presented briefly.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100570"},"PeriodicalIF":8.2,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143308087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hopping transfer optimizes avalanche multiplication in molybdenum disulfide","authors":"Xiaofan Cai,&nbsp;Ruichang Chen,&nbsp;Yushui Tian,&nbsp;Xu Gao,&nbsp;Meili Yuan,&nbsp;Haixia Hu,&nbsp;Hang Yin,&nbsp;Yuanyuan Qu,&nbsp;Yang Tan,&nbsp;Feng Chen","doi":"10.1016/j.mtnano.2025.100579","DOIUrl":"10.1016/j.mtnano.2025.100579","url":null,"abstract":"<div><div>Recently, avalanche multiplication has been observed in TMDC-based FETs, enhancing sensor performance with high sensitivity. However, the high voltage required for operation can damage the FETs, making it crucial to reduce the breakdown voltage for effective sensing applications. Here, we demonstrate that the utilization of hopping transfer induced by high-density defects can effectively reduce the breakdown voltage in TMDCs FETs. By substituting oxygen atoms for sulfur atoms in a monolayer of MoS₂, we create MoS_2-xO_x, with <em>x</em> carefully adjusted within the range of 0–0.51. Oxygen doping reduces the bandgap of TMDCs and enhances ion collision rates. Moreover, higher levels of oxygen doping (<em>x</em> &gt; 0.41) in MoS_2-xO_x exhibit nearest-neighbor hopping behavior, leading to a significant enhancement in electron mobility. These improvements result in a decrease in the breakdown voltage of avalanche multiplication from 26.2 V to 12.6 V. Additionally, we propose avalanche multiplication in MoS_2-xO_x as an efficient sensing mechanism to overcome the limitations of gas sensing. The MoS_2-xO_x sensors display an ultra-high response to NO₂ gas in the air, with a response of 5.8 × 10³ % to NO₂ gas of 50 ppb at room temperature, which is nearly two orders of magnitude higher than resistance-type gas detectors based on TMDCs. This work demonstrates that hopping transfer induced by high-density oxygen defects can effectively decrease the breakdown voltage of MoS_2-xO_x FETs, enhancing avalanche multiplication and serving as a promising mechanism for ultrasensitive gas detection.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100579"},"PeriodicalIF":8.2,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143176214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Functionally gradient high-entropy cemented carbide with tailored nano reinforcements","authors":"Jialin Sun ,&nbsp;Xiao Li ,&nbsp;Xialun Yun ,&nbsp;Jun Zhao","doi":"10.1016/j.mtnano.2025.100578","DOIUrl":"10.1016/j.mtnano.2025.100578","url":null,"abstract":"<div><div>Structural hierarchy can improve the mechanical responses of materials, meaning that making materials harder and tougher by tailoring the microstructures has been an enduring pursuit in materials science. This is exemplified by the inherent hardness-fracture toughness trade-off of cemented carbides circumvented through introducing microstructural gradients. Advanced cemented carbides must be highly resistant to both deformation and fracture. Herein, the characteristics and stabilization of Co gradient, as well as their influences on the mechanical properties of the high-entropy cemented carbides were investigated in detail for tailoring reinforcements including MLG (multilayer graphene)/MCNT (multiwall carbon nanotube) in surface layer and VC/Cr₃C₂ in the inter and core layers. It is found that the graded HEC (high-entropy carbide)-based cemented carbides afforded enhanced hardness-fracture toughness relationship in comparison with traditional WC-Co, WC-HEA (high-entropy alloy), HEC-Metal and gradient WC-Co, as a function of the combination of high entropy carbide as alternative hard phase to WC, graded structure coupled with hybrid MLG/MCNT reinforcements. This observation provided an avenue for enhancing the mechanical behaviors of other materials as ceramics through tailoring microstructures.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100578"},"PeriodicalIF":8.2,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143176216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of the thermal oxidation of sputtered multi-layered TiN/Cu/TiN films","authors":"Jie Xu,&nbsp;Chao Gao,&nbsp;Linlin Lu,&nbsp;Run Chen,&nbsp;Chong Fu,&nbsp;Yi Liu","doi":"10.1016/j.mtnano.2025.100577","DOIUrl":"10.1016/j.mtnano.2025.100577","url":null,"abstract":"<div><div>To obtain functional films with both electromagnetic shielding and infrared stealth capabilities, this paper employs a method combining magnetron sputtering technology and thermal oxidation process. A TiN/Cu/TiN multilayer film is designed by magnetron sputtering, and then is oxidized at different temperature (300, 500, 700 °C) respectively. The properties of the films are improved with the increase of the thermal oxidation temperature, especially at 700 °C. After thermal oxidation at 700 °C, the film is completely oxidized to form a CuTiO oxide film with a unique hybrid structure of microfibers and nanoparticles. The uniformly and randomly oriented fibers in CuTiO film form a high-conductivity network which can provide a convenient transmission path for carrier transmission, reducing the film's resistivity. Depend on the high absorption of electromagnetic waves by these fibers, CuTiO oxide film has the best electromagnetic shielding performance. The shielding loss is up to 55 dB, mainly from the absorption loss, and the reflection loss is only 2 dB. Most of these fibers are around a few microns in size, which is close to the infrared wavelength of 3–5 μm and 8–14 μm, resulting in a strong Mie scattering, leading to a high decrease in the absorption of infrared waves. Thus, the infrared emissivity is significantly reduced accordingly. The method in this paper not only obtains the multifunctional film, but also solves the problem of secondary pollution of electromagnetic radiation dominated by reflection loss and the deterioration of infrared emissivity with the increase of operating temperature.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100577"},"PeriodicalIF":8.2,"publicationDate":"2025-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Homogeneous photoelectric reservoir computing system based on chalcogenide phase change materials","authors":"Peng Zhao ,&nbsp;Senhao Yan ,&nbsp;Ruoxuan Xing ,&nbsp;Jiaping Yao ,&nbsp;Xiang Ge ,&nbsp;Kai Li ,&nbsp;Xiaomin Cheng ,&nbsp;Xiangshui Miao","doi":"10.1016/j.mtnano.2025.100576","DOIUrl":"10.1016/j.mtnano.2025.100576","url":null,"abstract":"<div><div>A neuromorphic visual system integrating photoelectronic synapses to perform the in-sensor computing is triggering a revolution thanks to the reduction of latency and energy consumption. Phase change materials based on Ge-Sb-Te ternary alloy have become a strong candidate for neuromorphic computing due to its compatibility with complementary metal oxide semiconductor (CMOS). Hence, a homogeneous photoelectronic reservoir computing (RC) system based on chalcogenide phase change material is proposed in this work. The reservoir and readout layers are realized by the same material, and the sign language recognition is implemented by in-sensor computing and in-memory parallel computing. By doping N into Ge₁Sb₄Te₇ (NGST), the conductance modulation linearity, symmetry and retention of the phase change electrical synapse are improved, making the NGST electrical synapse excellent for readout layer. Meanwhile, the nonlinear optical response characteristics and persistent photoconductivity (PPC) effect of amorphous-NGST (a-NGST) enable the a-NGST photo-synapses to form an ideal photoelectric reservoir. The system's sign language recognition accuracy can reach 99.58 %. With a random noise level of 15 %, the system's sign language recognition accuracy remains above 90 %. This homogeneous design for photoelectric RC system shows excellent process compatibility and high integration. Furthermore, due to the excellent retention characteristics of the NGST synaptic device in the readout layer, the system's sign language recognition accuracy remains 97.60 % after 10⁶s. This work shows that the chalcogenide phase-change materials have great potential in in-sensor computing applications.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100576"},"PeriodicalIF":8.2,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Colossal vertical conductivity enhancement in graphene by wrinkle engineering","authors":"Marinos Dimitropoulos ,&nbsp;Emilia Papasouli ,&nbsp;Anastasios C. Manikas ,&nbsp;Christos Tsakonas ,&nbsp;Michel Rérat ,&nbsp;Emmanuel N. Koukaras ,&nbsp;Panaghiotis Karamanis ,&nbsp;Costas Galiotis","doi":"10.1016/j.mtnano.2025.100575","DOIUrl":"10.1016/j.mtnano.2025.100575","url":null,"abstract":"<div><div>Wrinkles are out-of-plane deformations, commonly seen in chemical vapor deposition (CVD) grown graphene, that mostly arise from thermal expansion mismatches. These one-dimensional corrugations are believed to be centers of altered electrical and electronic properties for graphene. Herein, high-resolution electrical modes of Atomic Force Microscopy (AFM) were employed to measure the nanoscale current and work function distribution of graphene wrinkles. Tapping current measurements showcased an unforeseen increase up to two orders of magnitude compared to flat regions. As revealed by extensive first principles calculations (density functional theory employing CAM-B3LYP and PBE0 functionals) and experimental data (AFM advanced electrical modes), an interplay of mechanisms between polarization, separation from the substrate and strain gradients result in an impressive increase in vertical conductivity with possible implications for analogous surge also along wrinkle axes. Furthermore, characteristic variations in the work function of wrinkles, with respect to various substrates, could be clearly identified. The implications of our findings may pave the way for fine-regulation of conductivity via wrinkle engineering for the previously unexplored out-of-plane direction, as well as for the controlled formation of conductive channels.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100575"},"PeriodicalIF":8.2,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unraveling the correlation between reduced thickness and enhanced electrical conductivity in HNO3-treated PEDOT:PSS ultrathin nanofilms","authors":"Minghua Kong ,&nbsp;Qinglin Jiang ,&nbsp;Wenkai Zhong ,&nbsp;Zhongbin Wang ,&nbsp;Yuguang Ma ,&nbsp;Guangming Chen ,&nbsp;Jiaqing He","doi":"10.1016/j.mtnano.2025.100574","DOIUrl":"10.1016/j.mtnano.2025.100574","url":null,"abstract":"<div><div>Although the research of organic polymer thermoelectric materials has witnessed significant progress in recent decade, the in-depth mechanism at molecular level still remains unclear for nanoscale films in thickness. Here, we report a strategy to dramatically enhance the electrical conductivity by reducing the thickness for ultrathin nanoscale films of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). First, PEDOT:PSS nanofilms were prepared by spin coating and subsequent HNO₃ post-treatment. We found that the reduction of film thickness resulted in a remarkably improved electrical conductivity. When the thickness reduced from 23 nm to 15 nm, the electrical conductivity enhanced significantly from 1772 S cm⁻¹ to 3059 S cm⁻¹. Moreover, the underlying mechanism was studied. With the decrease of film thickness, the content of the insulating PSSH greatly reduced, and the oxidation level of PEDOT chains increased. In addition, a fibrous morphology with large conductive micro-‍domains occurred, and the degree of crystallinity for PEDOT enhanced. The present study helps to prepare high-performance polymer thermoelectric materials and elucidate the carrier transport mechanism for nanoscale films of conducting polymers.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100574"},"PeriodicalIF":8.2,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}