Materials Today Nano最新文献

{"title":"Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon","authors":"Fabrizio Rovaris,&nbsp;Anna Marzegalli,&nbsp;Francesco Montalenti,&nbsp;Emilio Scalise","doi":"10.1016/j.mtnano.2024.100548","DOIUrl":"10.1016/j.mtnano.2024.100548","url":null,"abstract":"<div><div>Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology. In this work we shed light on the atomic-scale mechanisms leading to phase transformations in Si under pressure. To do so, we synergically exploit different state-of-the-art approaches. In particular, we use the advanced GAP interatomic potential both in NPT molecular dynamics simulations and in solid-state nudged elastic band calculations, validating our predictions with ab initio DFT calculations.</div><div>We provide a link between evidence reported in experimental nanoindentation literature and simulation results. Particular attention is dedicated to the investigation of atomistic transition paths allowing for the transformation between BC8/R8 phases to the <em>hd</em> one under pure annealing. In this case we show a direct simulation of the local nucleation of the hexagonal phase in a BC8/R8 matrix and its corresponding atomic-scale mechanism extracted by the use of SS-NEB. We extend our study investigating the effect of pressure on the nucleation barrier, providing an argument for explaining the heterogeneous nucleation of the <em>hd</em> phase and unraveling its main parameters with possible applications to the design of nanostructured materials.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100548"},"PeriodicalIF":8.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosting non-volatile memory performance with exhalative annealing: A novel approach to low-temperature crystallization of hafnia based ferroelectric","authors":"Yunseong Lee ,&nbsp;Un Jeong Kim ,&nbsp;Kihong Kim ,&nbsp;Dong-Jin Yun ,&nbsp;Duk-hyun Choe ,&nbsp;Sijung Yoo ,&nbsp;Hyun Jae Lee ,&nbsp;Seung-Geol Nam ,&nbsp;Sanghyun Jo ,&nbsp;Yoonsang Park ,&nbsp;Donghoon Kim ,&nbsp;Dongmin Kim ,&nbsp;Haeryong Kim ,&nbsp;Keunwook Shin ,&nbsp;Sahn Nahm ,&nbsp;Jinseong Heo","doi":"10.1016/j.mtnano.2024.100546","DOIUrl":"10.1016/j.mtnano.2024.100546","url":null,"abstract":"<div><div>In this study, we propose a CMOS-compatible exhalative annealing (EA) method that can significantly reduce the annealing temperature of Zr-doped hafnia-based ferroelectrics (HZO). Compared to the conventional rapid thermal annealing (RTA) process, our EA process reduces the crystallization temperature (<em>T</em>_{<em>cryst</em>}) of HZO films across all thickness ranges (5–10 nm). In particular, a 5 nm-thick HZO film, which is ideal for future 3D semiconductor devices, exhibited a 50 % reduction in <em>T</em>_{<em>cryst</em>} from 500 °C to 250 °C. X-ray photoelectron spectroscopy (XPS) analysis reveals that the EA method reduces both residual carbon and oxygen vacancy concentrations. High-resolution transmission electron microscopy (HRTEM) confirmed a significant reduction in interfacial mixing between HZO and the electrodes. Capacitors made of Molybdenum (Mo) electrode/HZO/Mo electrode structure annealed using EA at 250 °C exhibited 2 orders of magnitude reduced leakage current at 3 MV cm⁻¹, along with robust ferroelectric properties (2Pr and 2Ec values of 36.7 μC cm⁻² and 2.38 MV cm⁻¹, respectively). Implementing our method to ferroelectric field effect transistors (FeFETs) on a wafer scale resulted in a 33 % increase in their memory window. The CMOS-compatible EA method is effective for producing ferroelectric field-effect transistors on a wafer scale and is well suited for the fabrication of next-generation hafnia-based ferroelectric nonvolatile memory. EA holds great promise for developing future semiconductor devices due to its industry-friendly process and minimal thermal damage.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100546"},"PeriodicalIF":8.2,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Top-down fabrication of Si nanotube arrays using nanoimprint lithography and spacer patterning for electronic and optoelectronic applications","authors":"Yong-Lie Sun,&nbsp;Wipakorn Jevasuwan,&nbsp;Naoki Fukata","doi":"10.1016/j.mtnano.2024.100547","DOIUrl":"10.1016/j.mtnano.2024.100547","url":null,"abstract":"<div><div>Silicon (Si) nanotube arrays are expected to be a promising material for application in electronics and optoelectronics due to their large specific surface area with axially hollow spaces, whereas realizing smooth surfaces, high aspect ratios, and controlled dimensions remains a challenge. Moreover, it is also necessary to estimate various aspects of Si nanotubes such as their surface damage and anti-reflective properties. Here, we demonstrate a top-down fabrication of Si nanotube arrays with wall thicknesses of ∼40 to ∼10 nm using nanoimprint lithography (NIL) and spacer patterning. The Bosch process yields the nanotubes with smooth surfaces, long lengths (∼1000 nm), and no noticeable distortion or deformation. Raman scattering and electron spin resonance (ESR) measurements show their high crystal quality with a low density of surface dangling-bond defects. Furthermore, a significant enhancement of the anti-reflection effect of nanotubes and its dimension dependence is demonstrated and investigated by UV–Vis–NIR spectrophotometry as well as numerical simulations.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100547"},"PeriodicalIF":8.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoscale mapping of local intrinsic strain-induced anomalous bandgap variations in WSe2 using selective-wavelength scanning photoconductivity microscopy","authors":"Yuhyeon Oh,&nbsp;Mingyu Jung,&nbsp;Shashank Shekhar,&nbsp;Seunghyo Park,&nbsp;Seunghun Hong","doi":"10.1016/j.mtnano.2024.100545","DOIUrl":"10.1016/j.mtnano.2024.100545","url":null,"abstract":"<div><div>Nanoscale defects can locally tailor the optoelectronic properties of two-dimensional materials such as bandgap. However, it is still challenging to directly map and analyze the defect-induced bandgap variations in a quantitative manner. Here, we report the nanoscale mapping of local intrinsic strain-induced anomalous bandgap variations in as-grown WSe₂ by using a selective-wavelength scanning photoconductivity microscopy. In this method, a conducting nanoprobe is utilized to map the spatial distributions of strain, sheet-conductance, and charge trap density (<em>N</em>_eff) of epitaxially-grown WSe₂ on sapphire while illuminating monochromatic light of selective wavelengths. Under un-illuminated conditions, the maps showed WSe₂ domain structures with boundaries having slightly lower sheet-conductance and higher <em>N</em>_eff than those in domains, presumably due to low misorientation angles between adjacent epitaxially-grown domains. By measuring wavelength-dependent photoconductance maps and fitting each pixel value of the maps, we could successfully obtain the map of local bandgap. The map clearly showed bandgap variations inside domains as well as rather low bandgaps at boundaries. By comparing with local strain map, we found that tensile strain effectively reduced bandgap following two different power-law relationships. Such anomalous bandgap variations in WSe₂ could be explained by strain-induced weakening of <em>d</em>-orbital couplings. Furthermore, in a monolayer-bilayer WSe₂ interface, bilayer WSe₂ exhibited lower bandgap than the underlying monolayer WSe₂, while interfacial boundaries exhibited the strain-induced bandgap values in between those of monolayer and bilayer WSe₂. Since our method allows us to directly map the intrinsic strain-induced bandgap variations with a nanoscale resolution down to tens-of-nm, it can be a powerful tool for basic research and practical applications of optoelectronic devices based on two-dimensional materials.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100545"},"PeriodicalIF":8.2,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance single SiC nanocable-based plasmonic photodetectors for ultraviolet communication systems","authors":"Mi Chen ,&nbsp;Zijian Tang ,&nbsp;Hongmei Liu ,&nbsp;Peifen Zhu ,&nbsp;Ying Su ,&nbsp;Bingshe Xu ,&nbsp;Pan Wang ,&nbsp;Guodong Wei","doi":"10.1016/j.mtnano.2024.100544","DOIUrl":"10.1016/j.mtnano.2024.100544","url":null,"abstract":"<div><div>Silicon carbide (SiC) nanowires are the most promising candidate for developing high-performance single-nanowire-based UV photodetector (PD) with outstanding photoelectronic properties and low power consumption. However, SiC single-nanowire-based UV PDs commonly suffer from very low light current on the order of pA or nA, requiring precision equipment or an extra current amplification circuit, which greatly limit their practical application. To overcome this bottleneck, novel SiC single nanocable-based plasmonic PDs with the light current on the order of mA were successfully developed with the features of improving light absorption and reducing the dark current. The SiC/SiO₂@Ag nanocables consisting of SiC nanowire core and uniform SiO₂ shell encrusted with scattered and isolated Ag nanoparticles (NPs) were fabricated by a simple, low-cost, and space-confined vacuum-heating strategy using ultralong SiC nanowires and silver nitrate precursor followed by the annealing process. In such architecture, the in situ resulting SiO₂ shell can effectively passivate the surface defects of the SiC nanowire core, restrain the photo-excited carrier's losses, and effectively block the hot electron injection, leading to a great reduction in the dark current and enhancement in the light current. The encrusted Ag NPs on the nanocable surface exhibited a strong LSPR effect with significantly increased optical absorption. Benefiting from the synergistic effect of SiO₂ passivation and Ag nanoparticle LSPR effect, the device current increased dramatically by several orders of magnitude to reach 0.37 mA at a bias voltage of 3 V. Moreover, the developed SiC/SiO₂@Ag PDs had faster response speed (0.27 s), lower dark current at the nA level, and high stability, which can be competent for the development of real-time, accurate, and cost-effective communication systems and flame detection with impressive switching ratio as high as 66012.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100544"},"PeriodicalIF":8.2,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neutrophil-inspired Zn and Zn@ZnO microparticles decorated with Cu nanoparticles self-release oxidized halogen antimicrobials","authors":"Guangshun Yi ,&nbsp;Siew Ping Teong ,&nbsp;Shujun Gao ,&nbsp;Arunmozhiarasi Armugam ,&nbsp;Xiukai Li ,&nbsp;Jinquan Wang ,&nbsp;Shook Pui Chan ,&nbsp;Hongfang Lu ,&nbsp;Jackie Y. Ying ,&nbsp;Yugen Zhang","doi":"10.1016/j.mtnano.2024.100542","DOIUrl":"10.1016/j.mtnano.2024.100542","url":null,"abstract":"<div><div>Oxidized halogen antimicrobials, such as hypochlorous acid, have been widely used for microbial control, successfully eliminating waterborne diseases like cholera, typhoid, dysentery, and hepatitis A in developed countries. During the COVID-19 pandemic, these acids were used extensively for air and surface disinfection. However, they require repeated applications as they only offer one-time disinfection. To address this issue, we have developed Cu nanoparticles decorated Zn and Zn@ZnO (denoted as Zn@Cu and Zn@ZnO/Cu), mimicking the neutrophils NADPH oxidase (NOX) system. This novel system utilizes zinc metal to produce H₂O₂, and a catalytic copper shell to convert H₂O₂ and Cl⁻/Br⁻/I⁻ to hypohalous acid, which has good antimicrobial and antiviral properties along with enhanced durability. The addition of Zn@Cu onto painted surfaces shows good disinfection properties. The application of Zn@ZnO/Cu in diabetic wound healing yields superior outcomes to the conventional silver-based commercial products.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100542"},"PeriodicalIF":8.2,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-depth conduction mechanism analysis of programmable memristor and its biosynaptic applications","authors":"Shouhui Zhu ,&nbsp;Yuanzheng Chen ,&nbsp;Guangdong Zhou ,&nbsp;Hongbin Zhao ,&nbsp;Yong Zhang ,&nbsp;Min Xu ,&nbsp;Yong Zhao ,&nbsp;Bai Sun","doi":"10.1016/j.mtnano.2024.100543","DOIUrl":"10.1016/j.mtnano.2024.100543","url":null,"abstract":"<div><div>Flexible electronic devices offer a broad spectrum of potential applications, promising unprecedented convenience and opportunities in both human life and work. In particular, the flexible memristors have many superior performance characteristics, including high endurance, flexibility, and low power consumption, making them perfect for the rapidly growing fields of wearable devices, flexible displays, and other cutting-edge technologies. In this work, a flexible HfO_x-based memristor with good stability and recyclability was demonstrated. By exploiting the temperature dependence characteristic of the electrical properties, it was identified the central role of oxygen vacancies in a classical conductive filament. Further, the analog resistive switching behavior and synapse-like functional properties can be successfully achieved through pulse programming, indicating that it can be applied to the construction of artificial synapses. Therefore, the as-proposed flexible memristor is expected to emerge as a key candidate for the development of functional devices for both wearable systems and neuromorphic computing.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100543"},"PeriodicalIF":8.2,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial metallization in segregated structured PEEK composite for enhanced thermal conductivity and electromagnetic interference shielding","authors":"Yifan Wang ,&nbsp;Haicheng Ren ,&nbsp;Fengyu Wen ,&nbsp;Yageng Bai ,&nbsp;Yashu He ,&nbsp;Lin Cheng ,&nbsp;Haoyuan Tan ,&nbsp;Jierun Ma ,&nbsp;Pengbo Lian ,&nbsp;Yuxuan Gu ,&nbsp;Rui Chen ,&nbsp;Jianxin Mu","doi":"10.1016/j.mtnano.2024.100540","DOIUrl":"10.1016/j.mtnano.2024.100540","url":null,"abstract":"<div><div>The increasing integration of electronic devices has created an urgent demand for multi-functional composites with efficient thermal management and electromagnetic interference (EMI) shielding. In this study, a three-dimensional (3D) continuous metal–carbon hybrid thermally/electrically conductive network structure is fabricated by in-situ nickel plating of core–shell structured polyetheretherketone (PEEK) hybrid particles. The hybrid particles realize phonon and electron dual heat-transfer pathways and reduce the interfacial thermal resistance by using metallic Ni nanoparticles to bridge the gap. Furthermore, the interfacial metallization and segregated structure significantly enrich the multiple electromagnetic wave reflection and attenuation mechanisms. The PEEK composites with metallized-segregated structure and filler content of 28.26 vol% exhibit an excellent through-plane thermal conductivity of 6.52 W m⁻¹·K⁻¹ and an efficient EMI shielding of 91 dB, thus demonstrating their significant potential as multi-functional thermal management materials. The heat-transfer and EMI shielding process of the composites can be visualised using the finite element model, which further proves the effectiveness of the segregated structure and metallization. This simple and efficient strategy is expected to facilitate the manufacture of multi-functional thermal management composites with high thermal conductivity and excellent EMI shielding.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100540"},"PeriodicalIF":8.2,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced microwave absorption properties of Ti3AlC2 particles modified by a facile preoxidation strategy","authors":"Xiachen Fan,&nbsp;Shibo Li,&nbsp;Weiwei Zhang,&nbsp;Xuejin Zhang,&nbsp;Junji Mou","doi":"10.1016/j.mtnano.2024.100539","DOIUrl":"10.1016/j.mtnano.2024.100539","url":null,"abstract":"<div><div>MAX phases are considered to be promising microwave absorbing materials in fifth-generation (5G) communications, but their high electrical conductivity causes impedance mismatching, weakening their ability to absorb microwaves. Here, we present a universal preoxidation strategy to improve the impedance matching and the microwave absorption performance of a Ti₃AlC₂ MAX phase absorbing material. The microwave absorption properties of Ti₃AlC₂ particles were enhanced after preoxidation at temperatures of 500–700 °C for only 30 min in air, as compared with unoxidized Ti₃AlC₂ particles. More interestingly, the 600 °C-preoxidized Ti₃AlC₂ material reached a minimum reflection loss (RL_min) value of −50.56 dB at 8.87 GHz, superior to −12.36 dB at 12.82 GHz for the original Ti₃AlC₂ material. The preoxidized Ti₃AlC₂ particles were covered by a thin oxidation layer comprising both amorphous TiO₂ (a-TiO₂) and rutile TiO₂ (R-TiO₂). The oxidation layer endows the preoxidized Ti₃AlC₂ particles with good impedance matching, and a large number of nano-interfaces of a-TiO₂/R-TiO₂ and micro-interfaces of a-TiO₂/Ti₃AlC₂ also contribute to the dielectric loss mechanism, thus improving its microwave absorption ability. This work provides a practical strategy for the fundamental study and the optimal design of MAX microwave absorbing materials.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100539"},"PeriodicalIF":8.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142663711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Poly aryletherketone chemically modified multi-walled carbon nanotubes/poly etheretherketone electromagnetic interference shielding foam suitable for high temperature and strong corrosive media","authors":"Xiaohan Mei,&nbsp;Tonghua Wu,&nbsp;Liubo Liang,&nbsp;Yu Bai,&nbsp;Jianpeng Jiao,&nbsp;Chunqi Guo,&nbsp;Yanchao Yang,&nbsp;Guibin Wang,&nbsp;Shuling Zhang","doi":"10.1016/j.mtnano.2024.100538","DOIUrl":"10.1016/j.mtnano.2024.100538","url":null,"abstract":"<div><div>Poly aryletherketone chemically modified multi-walled carbon nanotubes/poly etheretherketone <strong>(</strong>PAEK-m-CNTs/PEEK) electromagnetic interference (EMI) shielding foams were fabricated using supercritical carbon dioxide (Sc-CO₂) foaming technique saturated near-melting point (<em>T</em>_<em>m</em>). The percolation thresholds for conductivity and EMI shielding of PAEK-m-CNTs/PEEK foams were both significantly reduced by the presence of the porous structure, reaching to 0.0457 vol% and 0.123 vol%, respectively. These reductions were observed to be 87.72 % and 75.20 % of those of PAEK-m-CNTs/PEEK composites. This could be attributed to the heterogeneous nucleation of PAEK-m-CNTs, which are uniformly dispersed in PEEK, in addition to the Sc-CO₂ foaming technique saturated near <em>T</em>_<em>m</em>. By comparison, it could be observed that the specific total electromagnetic shield effectiveness (<em>SSE</em>_{<em>Total</em>}) of PAEK-m-CNTs/PEEK foam with a filler content of 0.440 vol% was 687.9 % higher than that of PAEK-m-CNTs/PEEK composite with a filler content of 0.496 vol%. Moreover, the introduction of the porous structure transformed the electromagnetic shielding material from reflective to absorptive. In addition, PAEK-m-CNTs/PEEK foams demonstrated the capacity to maintain stable performance even in high temperatures of up to 315 °C and in the presence of strong corrosive media.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100538"},"PeriodicalIF":8.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142663712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}