Materials Today Nano最新文献

{"title":"Achieving metallurgical bonding in ZnO/CuO p-n junction via nanosecond laser irradiation","authors":"Maryam Soleimani ,&nbsp;Walter Duley ,&nbsp;Y Norman Zhou ,&nbsp;Peng Peng","doi":"10.1016/j.mtnano.2024.100554","DOIUrl":"10.1016/j.mtnano.2024.100554","url":null,"abstract":"<div><div>Robust p-n heterojunctions between wide and narrow bandgap semiconductors are essential for enhancing carrier transport and improving device efficiency. However, achieving uniform metallurgical bonding and an integrated interface remains challenging due to lattice mismatches. This study demonstrates that optimized nanosecond laser irradiation successfully forms a void-free interface in CuO nanowires and ZnO film. Nano-diffraction patterns confirm the coexistence of ZnO and CuO phases at the interface, indicating robust metallurgical bonding and significant interdiffusion. Additionally, laser-induced oxygen vacancies enhance carrier density and electron migration, improving charge transport and reducing recombination rates. These improvements yield an ideality factor of ∼1.2 for the p-n junction. The optimized ZnO/CuO photodetector demonstrates a maximum photocurrent of 1.6 μA, a responsivity of 0.1 mA/W, and a detectivity of 3.95 × 10⁶ Jones, representing an 8-fold improvement compared to the unprocessed sample. This study highlights the transformative potential of laser nanojoining in advancing high-performance optoelectronic devices.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100554"},"PeriodicalIF":8.2,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143176261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Precious metal Ir-ALD process engineered 2D V-MXene advanced heterostructures for next-generation hydrogen evolution electrocatalyst","authors":"Debananda Mohapatra ,&nbsp;Mohd Zahid Ansari ,&nbsp;Yeseul Son ,&nbsp;Sanghyuk Lee ,&nbsp;Youngho Kang ,&nbsp;Soo-Hyun Kim","doi":"10.1016/j.mtnano.2024.100557","DOIUrl":"10.1016/j.mtnano.2024.100557","url":null,"abstract":"<div><div>Precious metals are rare, requiring efficient and intelligent uses from single atoms to nanoclusters compared to their bulk counterparts for clean and green electrocatalysis applications. 2D layered MXene nanomaterials family welcomes structural and compositional variation avenues for their hydrogen evolution reaction (HER) electrolysis activities for sustainable hydrogen energy. To achieve a low over-potential value to cross the electrochemical energy barrier, producing high current density and low Tafel slopes critical performance parameters, we introduce highly efficient atomic layer deposited (ALD) iridium (Ir) on the least explored 2D delaminated V-MXene (ALDIr/V-MXene) for suitable use of expensive Ir. By an innovative, rational design of ALDIr/V-MXene heterostructure with controlled Ir-ALD process cycles (50–200), 2D layered V-MXene's accessible electrocatalytic active sites, hence their overall electrochemical energy conversion performance could be monitored and explored as desired. The optimized ALDIr-150/V-MXene electrocatalyst demonstrates the best HER catalytic performance among all designed ALDIr/V-MXene heterostructures, requiring a very low 91 mV overpotential to reach a standard current density (10 mA cm⁻²) and only 204 mV overpotential for its 10-times with fast electron transfer kinetics. The exceptionally high electrocatalytic activities support the precise role of Ir precious single atoms/nanoclusters engineering to the delaminated V-MXene through a well-controlled self-limiting ALD technique as established by first-principles computational methods. Ir single atoms/nanoclusters and their successful formation of advanced ALDIr/V-MXene heterostructure comprehensively probed using next-generation ultra-high-resolution scanning/transmission electron microscopies via cutting-edge spherical aberration correction technology. To the best of our knowledge, this is the first work on the precise use of Ir precious metals (single atoms/nanoclusters) on 2D V-MXene via ALD for successful HER electrocatalysis applications, paving the way forward for practical application-oriented other 2D nanomaterials and MXene families design through industrially preferred ALD technology.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100557"},"PeriodicalIF":8.2,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A microwave absorption/infrared dual-band dynamic stealth regulator based on the carbon nanotube film and metamaterial","authors":"Lejun Qu ,&nbsp;Chang Yang ,&nbsp;Shujuan Tan ,&nbsp;Ying Xiao ,&nbsp;Yue Wu ,&nbsp;Huicong Chang ,&nbsp;Lin Xiao ,&nbsp;Guangbin Ji","doi":"10.1016/j.mtnano.2024.100556","DOIUrl":"10.1016/j.mtnano.2024.100556","url":null,"abstract":"<div><div>Single-band stealth technology is increasingly inadequate to achieve the demands of the rapidly evolving military environment. To address the joint utilization of multi-band detection technologies, the development of multi-spectrum compatible stealth materials has emerged as a significant trend. Carbon nanotubes (CNT) exhibit excellent electrical conductivity and electrochromic-infrared (EC-IR) emissivity modulation. However, CNT films demonstrate metallic-like properties in the microwave range, exhibiting almost total specular reflection of incident electromagnetic waves. This characteristic complicates the achievement of compatible stealth between infrared (IR) and radar stealth using CNT films. This work proposes a radar-dynamic infrared compatible stealth structure which integrates a CNT electrochromic (EC) device with metamaterial technology. The obtained metamaterial structure in the top layer can realize more than 90 % absorption over 9.67–16.04 GHz, while also providing the infrared emissivity modulation range of 0.323–0.768 in the long-wave infrared (8–14 μm). This study achieves the stealth performance in radar/IR bands, demonstrating the feasibility of the application, providing a new perspective in multispectral independent modulation camouflage and stealth fields.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100556"},"PeriodicalIF":8.2,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Iron ion driven remote loading of galloylated cabazitaxel prodrugs for synergistic ferroptosis and chemotherapy","authors":"Baoyue Zhang ,&nbsp;Jiang Yu ,&nbsp;Ruiping Huang ,&nbsp;Jianying Ye ,&nbsp;Fanlin Meng ,&nbsp;Zhaochu Xu ,&nbsp;Wenwen Cui ,&nbsp;Jia Song ,&nbsp;Siqi Wang ,&nbsp;Yanjun Du ,&nbsp;Qingzhi Lv ,&nbsp;Wanling Zhu ,&nbsp;Dan Liu ,&nbsp;Yongjun Wang","doi":"10.1016/j.mtnano.2024.100551","DOIUrl":"10.1016/j.mtnano.2024.100551","url":null,"abstract":"<div><div>Liposomes, particularly those designed for remote drug loading, have achieved remarkable success as drug-delivery vehicles in clinical settings. However, the lack of ionizable or coordinative groups prevents many promising drugs from being remotely loaded into liposomes for cancer therapy. Herein, to provide a universal remote loading approach, we chose cabazitaxel (CTX) as a model drug to modify galloyl group bridged by different lengths of alkyl chain. Fortunately, all the synthesized prodrugs could be actively loaded into liposomes via Fe³⁺ gradient with high encapsulation efficiency and loading capacity. As the intraliposomal aqueous phase, Fe³⁺ was not only served as the driving force of prodrugs remote loading, but also regarded as an exogenous replenishment to strengthen iron-dependent ferroptosis for multimodal therapy. The length of linkage between CTX and galloyl group played a crucial role in the chemical stability of prodrugs, <em>in vitro</em> drug release rate and <em>in vivo</em> pharmacokinetics behavior of prodrug liposomes. Among three prodrug liposomes, only decylene glycol-bridged CTX-gallic acid (CTX-DC-GA) liposomes kept a good balance between drug leakage during circulation and specific drug release under tumor microenvironment. Ultimately, CTX-DC-GA liposomes displayed optimal antitumor efficacy with good safety. We proposed Fe³⁺-based galloylated prodrug liposomes give new horizons for achieving the combination of ferroptosis and chemotherapy.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100551"},"PeriodicalIF":8.2,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143176262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Salt melt synthesis of efficient carbon-based microwave absorber","authors":"Long Qin ,&nbsp;Zhiqian Yang ,&nbsp;Han Gao ,&nbsp;Jianbiao Ye ,&nbsp;Qian Yan ,&nbsp;Yiming Zhang ,&nbsp;Xuan Liu ,&nbsp;Wenhuan Huang ,&nbsp;Ya Yang ,&nbsp;Meng He ,&nbsp;Aming Xie ,&nbsp;Fan Wu","doi":"10.1016/j.mtnano.2024.100552","DOIUrl":"10.1016/j.mtnano.2024.100552","url":null,"abstract":"<div><div>Carbon-based microwave absorption (MA) materials play a crucial role in MA field. The carbon-based MA materials prepared by molten salt method (MSM) have the advantages of green, efficient, and large-scale production. In this paper, CNT/Ni₃S₂ and Graphene/Ni₃S₂ MA materials are prepared by MSM, and both two materials are systematically characterized by SEM, TEM, XRD, Raman, XPS and other methods. Besides, the MA performances and electromagnetic (EM) properties of the two materials are analyzed. The results indicate that the optical reflection loss (<em>RL</em>) of the CNT/Ni₃S₂ composite can reach −62.45 dB at a thickness of 1.66 mm, and its effective absorption band (EAB) can reach 5.64 GHz at a thickness of 1.49 mm in the range of 2–18 GHz. The optical <em>RL</em> of the G/Ni₃S₂ composite can reach −55.71 dB at a thickness of 2.64 mm, and its EAB can reach 4.44 GHz at a thickness of 1.95 mm. Both materials have effective MA performance. This paper extends the application of MSM in the MA field.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100552"},"PeriodicalIF":8.2,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in space-confined synthesis of perovskite single-crystal thin films","authors":"Zhao Lv ,&nbsp;Liang He ,&nbsp;Xiangyan Yun ,&nbsp;Haizhe Zhong ,&nbsp;Henan Li ,&nbsp;Cheng Han ,&nbsp;Zheng Chen ,&nbsp;Yumeng Shi","doi":"10.1016/j.mtnano.2024.100550","DOIUrl":"10.1016/j.mtnano.2024.100550","url":null,"abstract":"<div><div>Perovskite materials are promising in the field of optoelectronics primarily because of their high crystal quality and tunable properties. Confined growth has emerged as an effective approach to fabricate perovskite single crystal thin films (PSCTFs) with favorable properties. However, current reports on confined growth methods predominantly focus on solution-based synthesis and lack a comprehensive understanding of how various growth conditions influence the final properties of PSCTFs despite this knowledge being crucial for synthesizing large high-quality PSCTFs. In this review, we provide an overview of the mechanisms involved in the confined synthesis of PSCTFs, summarize the application of confined growth strategies in solution-based methods and other approaches, and then discuss the fabrication of devices using films produced by these techniques. Finally, we highlight the remaining challenges and future opportunities in this rapidly advancing field.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100550"},"PeriodicalIF":8.2,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controlled synthesis of branched 2D polytypic CdS quantum nanostructures","authors":"Yoonkyum Kim ,&nbsp;Hyeonjong Ma ,&nbsp;Hyeongseung Kim ,&nbsp;Hyungju Ahn ,&nbsp;Gyeonguk Min ,&nbsp;Dong Hyeon Lee ,&nbsp;Yong-Young Noh ,&nbsp;Jin Joo ,&nbsp;Jiwoong Yang ,&nbsp;Jae Sung Son","doi":"10.1016/j.mtnano.2024.100549","DOIUrl":"10.1016/j.mtnano.2024.100549","url":null,"abstract":"<div><div>Colloidal two-dimensional (2D) semiconductor quantum nanostructures have attracted substantial interest owing to their atomically uniform thickness and spectrally sharp luminescence, exhibiting potential for optoelectronic and electronic device applications. Despite recent advancements in chemical synthesis enabling better control over lateral shapes and heterostructures, achieving morphological complexity in 2D semiconductor nanocrystals remains challenging. In this study, we report the controlled synthesis of branched 2D CdS quantum nanostructures, facilitating the realization of polytypism by growing zinc blende nano-domains within wurtzite-structured quantum nanoplates. The synthesized structures comprise multi-branched 2D quantum nanoplate arms with a precisely controlled thickness of ∼1.8 nm, joined at the zinc blende nano-domain junctions. The reaction conditions enable controlled variation in the length and complexity of these structures, while maintaining their sharp excitonic features of quantum-confined 2D semiconductor nanocrystals. <em>In-situ</em> small- and wide-angle X-ray scattering analysis, combined with spectroscopic and microscopic analyses, reveals that a discontinuous increase in thickness beyond a certain threshold is necessary to form zinc blende crystals within wurtzite nanoplates, upon which additional 2D quantum nanoplates subsequently grow. This study advances our understanding of 2D nanocrystal synthesis mechanisms and provides pathways for designing and fabricating branched 2D nanostructures with tailored properties.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100549"},"PeriodicalIF":8.2,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143175316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon","authors":"Fabrizio Rovaris,&nbsp;Anna Marzegalli,&nbsp;Francesco Montalenti,&nbsp;Emilio Scalise","doi":"10.1016/j.mtnano.2024.100548","DOIUrl":"10.1016/j.mtnano.2024.100548","url":null,"abstract":"<div><div>Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology. In this work we shed light on the atomic-scale mechanisms leading to phase transformations in Si under pressure. To do so, we synergically exploit different state-of-the-art approaches. In particular, we use the advanced GAP interatomic potential both in NPT molecular dynamics simulations and in solid-state nudged elastic band calculations, validating our predictions with ab initio DFT calculations.</div><div>We provide a link between evidence reported in experimental nanoindentation literature and simulation results. Particular attention is dedicated to the investigation of atomistic transition paths allowing for the transformation between BC8/R8 phases to the <em>hd</em> one under pure annealing. In this case we show a direct simulation of the local nucleation of the hexagonal phase in a BC8/R8 matrix and its corresponding atomic-scale mechanism extracted by the use of SS-NEB. We extend our study investigating the effect of pressure on the nucleation barrier, providing an argument for explaining the heterogeneous nucleation of the <em>hd</em> phase and unraveling its main parameters with possible applications to the design of nanostructured materials.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"29 ","pages":"Article 100548"},"PeriodicalIF":8.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosting non-volatile memory performance with exhalative annealing: A novel approach to low-temperature crystallization of hafnia based ferroelectric","authors":"Yunseong Lee ,&nbsp;Un Jeong Kim ,&nbsp;Kihong Kim ,&nbsp;Dong-Jin Yun ,&nbsp;Duk-hyun Choe ,&nbsp;Sijung Yoo ,&nbsp;Hyun Jae Lee ,&nbsp;Seung-Geol Nam ,&nbsp;Sanghyun Jo ,&nbsp;Yoonsang Park ,&nbsp;Donghoon Kim ,&nbsp;Dongmin Kim ,&nbsp;Haeryong Kim ,&nbsp;Keunwook Shin ,&nbsp;Sahn Nahm ,&nbsp;Jinseong Heo","doi":"10.1016/j.mtnano.2024.100546","DOIUrl":"10.1016/j.mtnano.2024.100546","url":null,"abstract":"<div><div>In this study, we propose a CMOS-compatible exhalative annealing (EA) method that can significantly reduce the annealing temperature of Zr-doped hafnia-based ferroelectrics (HZO). Compared to the conventional rapid thermal annealing (RTA) process, our EA process reduces the crystallization temperature (<em>T</em>_{<em>cryst</em>}) of HZO films across all thickness ranges (5–10 nm). In particular, a 5 nm-thick HZO film, which is ideal for future 3D semiconductor devices, exhibited a 50 % reduction in <em>T</em>_{<em>cryst</em>} from 500 °C to 250 °C. X-ray photoelectron spectroscopy (XPS) analysis reveals that the EA method reduces both residual carbon and oxygen vacancy concentrations. High-resolution transmission electron microscopy (HRTEM) confirmed a significant reduction in interfacial mixing between HZO and the electrodes. Capacitors made of Molybdenum (Mo) electrode/HZO/Mo electrode structure annealed using EA at 250 °C exhibited 2 orders of magnitude reduced leakage current at 3 MV cm⁻¹, along with robust ferroelectric properties (2Pr and 2Ec values of 36.7 μC cm⁻² and 2.38 MV cm⁻¹, respectively). Implementing our method to ferroelectric field effect transistors (FeFETs) on a wafer scale resulted in a 33 % increase in their memory window. The CMOS-compatible EA method is effective for producing ferroelectric field-effect transistors on a wafer scale and is well suited for the fabrication of next-generation hafnia-based ferroelectric nonvolatile memory. EA holds great promise for developing future semiconductor devices due to its industry-friendly process and minimal thermal damage.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100546"},"PeriodicalIF":8.2,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Top-down fabrication of Si nanotube arrays using nanoimprint lithography and spacer patterning for electronic and optoelectronic applications","authors":"Yong-Lie Sun,&nbsp;Wipakorn Jevasuwan,&nbsp;Naoki Fukata","doi":"10.1016/j.mtnano.2024.100547","DOIUrl":"10.1016/j.mtnano.2024.100547","url":null,"abstract":"<div><div>Silicon (Si) nanotube arrays are expected to be a promising material for application in electronics and optoelectronics due to their large specific surface area with axially hollow spaces, whereas realizing smooth surfaces, high aspect ratios, and controlled dimensions remains a challenge. Moreover, it is also necessary to estimate various aspects of Si nanotubes such as their surface damage and anti-reflective properties. Here, we demonstrate a top-down fabrication of Si nanotube arrays with wall thicknesses of ∼40 to ∼10 nm using nanoimprint lithography (NIL) and spacer patterning. The Bosch process yields the nanotubes with smooth surfaces, long lengths (∼1000 nm), and no noticeable distortion or deformation. Raman scattering and electron spin resonance (ESR) measurements show their high crystal quality with a low density of surface dangling-bond defects. Furthermore, a significant enhancement of the anti-reflection effect of nanotubes and its dimension dependence is demonstrated and investigated by UV–Vis–NIR spectrophotometry as well as numerical simulations.</div></div>","PeriodicalId":48517,"journal":{"name":"Materials Today Nano","volume":"28 ","pages":"Article 100547"},"PeriodicalIF":8.2,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142705029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}