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IEEE Transactions on Semiconductor Manufacturing Publication Information IEEE半导体制造学报
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3546533
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引用次数: 0
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing 呼吁提名主编：IEEE半导体制造汇刊
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3562407
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引用次数: 0
Call for Nominations for Editor-in-Chief: IEEE Electron Device Letters 呼吁提名主编：IEEE电子器件快报
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3560206
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引用次数: 0
Journal of Lightwave Technology Special Issue on: OFS-29 光波技术杂志特刊：OFS-29
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3546539
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices: Exploration of the Exciting world of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications IEEE电子器件材料特刊征文：探索多功能氧化物基电子器件的激动人心的世界：从材料到系统级应用
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3546537
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices: Exploration of the Exciting world of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications","authors":"","doi":"10.1109/TSM.2025.3546537","DOIUrl":"https://doi.org/10.1109/TSM.2025.3546537","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"361-362"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981906","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 《IEEE电子器件学报》特刊关于射频、功率和光电子应用的超宽带隙半导体器件的论文征集
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3562408
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/TSM.2025.3562408","DOIUrl":"https://doi.org/10.1109/TSM.2025.3562408","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"366-367"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981903","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Semiconductor Manufacturing Information for Authors IEEE半导体制造信息汇刊
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3546541
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引用次数: 0
Call for Nominations for Editor-in-Chief: IEEE Transactions on Electron Devices 《IEEE电子设备汇刊》主编提名公告
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3560207
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/TSM.2025.3560207","DOIUrl":"https://doi.org/10.1109/TSM.2025.3560207","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"365-365"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981911","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications 《汽车用宽带隙半导体电子器件》特刊征文
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3546535
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications","authors":"","doi":"10.1109/TSM.2025.3546535","DOIUrl":"https://doi.org/10.1109/TSM.2025.3546535","url":null,"abstract":"","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"359-360"},"PeriodicalIF":2.3,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10981902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guest Editorial Introduction to the Joint Special Issue on Semiconductor Design for Manufacturing (DFM) 《半导体制造设计》（DFM）联合特刊客座编辑简介
IF 2.3 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-03-01 DOI: 10.1109/TSM.2025.3559200
Bill Nehrer;Duane Boning;Jeanne Paulette Bickford;Tomasz Brozek;Angelo Pinto;Soichi Inoue;David Z. Pan
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引用次数: 0
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