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IEEE Transactions on Semiconductor Manufacturing最新文献

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Deep Learning-Based Multi-Horizon Forecasting for Automated Material Handling System Throughput in Semiconductor Fab 基于深度学习的半导体工厂自动化物料处理系统吞吐量多水平预测
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-11-11 DOI: 10.1109/TSM.2022.3221414
Jungwoo Choi;Hyeongwon Kang;Jeongseob Kim;Heejeong Choi;Yunseung Lee;Pilsung Kang
{"title":"Deep Learning-Based Multi-Horizon Forecasting for Automated Material Handling System Throughput in Semiconductor Fab","authors":"Jungwoo Choi;Hyeongwon Kang;Jeongseob Kim;Heejeong Choi;Yunseung Lee;Pilsung Kang","doi":"10.1109/TSM.2022.3221414","DOIUrl":"https://doi.org/10.1109/TSM.2022.3221414","url":null,"abstract":"Automated material handling systems (AMHS) aim to supply wafers to the right place at the right time in semiconductor fab. Appropriate management in response to the changing production environment is necessary to achieve this goal, and the implementation of optimal material handling based on this management can result in maximum output and increased operating profit. An optimal material handling environment can be maintained by monitoring the production system status and it can be more effective if the system status can be predicted in advance. This study presents the possibility of application and development of a deep learning-based (DL) framework for multi-horizon forecasting of throughput in the AMHS. For this purpose, we acquired the training data that can improve forecasting performance by interpolating anomalies present in the data through an anomaly detection model. The application of a DL model trained with the refined data resulted in outperformance compared to the statistical methods, and robust prediction performance was further confirmed through time series cross-validation. This study is important as it presents a forecasting method that can preemptively respond to the change in the production environments in a semiconductor fab by extracting the major factors that influenced the forecasting along with high performance.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"36 1","pages":"113-129"},"PeriodicalIF":2.7,"publicationDate":"2022-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3506191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wireless Measurement of the Degradation Rates of Thin Film Bioresorbable Metals Using Reflected Impedance 利用反射阻抗无线测量薄膜生物可吸收金属的降解率
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-11-10 DOI: 10.1109/TSM.2022.3221267
Joe Philpott;James Churm;Vahid Nasrollahi;Stefan Dimov;Carl Anthony;Gerard Cummins
{"title":"Wireless Measurement of the Degradation Rates of Thin Film Bioresorbable Metals Using Reflected Impedance","authors":"Joe Philpott;James Churm;Vahid Nasrollahi;Stefan Dimov;Carl Anthony;Gerard Cummins","doi":"10.1109/TSM.2022.3221267","DOIUrl":"https://doi.org/10.1109/TSM.2022.3221267","url":null,"abstract":"A method using reflected impedance to determine the electrical degradation rates of bioresorbable metals for physically transient electronic devices is outlined. This approach uses known mutual inductor interactions with simple single turn disk coil geometries and a frequency measurement system to track the reduction of the mean thickness of a thin film metal ring as it degrades. Experiments using \u0000<inline-formula> <tex-math>$mathrm {500~ text {n} text {m} }$ </tex-math></inline-formula>\u0000 thick zinc rings, fabricated by photolithography, thermal evaporation and lift-off, found a mean degradation rate of 278 nm h−1 in 37 °C de-ionised water. Experiments in 37 °C 1 mM hydrochloric acid found two distinct periods of degradation and a total degradation rate of 632 nm h−1 that closely matched the degradation rate measured using profilometry of 608 nm h−1.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"36 1","pages":"14-21"},"PeriodicalIF":2.7,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3487774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
2022 Index IEEE Transactions on Semiconductor Manufacturing Vol. 35 半导体制造学报，第35卷
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-11-02 DOI: 10.1109/TSM.2022.3218928
{"title":"2022 Index IEEE Transactions on Semiconductor Manufacturing Vol. 35","authors":"","doi":"10.1109/TSM.2022.3218928","DOIUrl":"https://doi.org/10.1109/TSM.2022.3218928","url":null,"abstract":"Presents the 2022 author/subject index for this issue of the publication.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"715-733"},"PeriodicalIF":2.7,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09935333.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3491441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Semiconductor Manufacturing Publication Information IEEE半导体制造学报
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-10-28 DOI: 10.1109/TSM.2022.3214939
{"title":"IEEE Transactions on Semiconductor Manufacturing Publication Information","authors":"","doi":"10.1109/TSM.2022.3214939","DOIUrl":"https://doi.org/10.1109/TSM.2022.3214939","url":null,"abstract":"Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"C2-C2"},"PeriodicalIF":2.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09932155.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3490843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for RFIC 2023 RFIC 2023征稿
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-10-28 DOI: 10.1109/TSM.2022.3215553
{"title":"Call for Papers for RFIC 2023","authors":"","doi":"10.1109/TSM.2022.3215553","DOIUrl":"https://doi.org/10.1109/TSM.2022.3215553","url":null,"abstract":"Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"714-714"},"PeriodicalIF":2.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09932153.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3508961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications" IEEE电子器件学报特刊“用于射频和功率应用的宽带和超宽带隙半导体器件”征文
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-10-28 DOI: 10.1109/TSM.2022.3214955
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on \"Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications\"","authors":"","doi":"10.1109/TSM.2022.3214955","DOIUrl":"https://doi.org/10.1109/TSM.2022.3214955","url":null,"abstract":"Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"710-711"},"PeriodicalIF":2.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09932158.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3511792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Semiconductor Manufacturing Information for Authors IEEE半导体制造信息汇刊
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-10-28 DOI: 10.1109/TSM.2022.3214941
{"title":"IEEE Transactions on Semiconductor Manufacturing Information for Authors","authors":"","doi":"10.1109/TSM.2022.3214941","DOIUrl":"https://doi.org/10.1109/TSM.2022.3214941","url":null,"abstract":"These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"C3-C3"},"PeriodicalIF":2.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09932146.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3488530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semiconductor Device Modeling for Circuit and System Design 电路与系统设计中的半导体器件建模
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-10-28 DOI: 10.1109/TSM.2022.3215026
{"title":"Semiconductor Device Modeling for Circuit and System Design","authors":"","doi":"10.1109/TSM.2022.3215026","DOIUrl":"https://doi.org/10.1109/TSM.2022.3215026","url":null,"abstract":"Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"708-709"},"PeriodicalIF":2.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09932152.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3511786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for IVEC 2023 IVEC 2023征稿
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-10-28 DOI: 10.1109/TSM.2022.3215540
{"title":"Call for Papers for IVEC 2023","authors":"","doi":"10.1109/TSM.2022.3215540","DOIUrl":"https://doi.org/10.1109/TSM.2022.3215540","url":null,"abstract":"Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"712-713"},"PeriodicalIF":2.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09932148.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3511804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, Processing and Integration for Neuromorphic Devices and In-Memory Computing" IEEE电子器件学会杂志特刊“神经形态器件和内存计算的材料、加工和集成”征文
IF 2.7 3区 工程技术
IEEE Transactions on Semiconductor Manufacturing Pub Date : 2022-10-28 DOI: 10.1109/TSM.2022.3214957
{"title":"Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on \"Materials, Processing and Integration for Neuromorphic Devices and In-Memory Computing\"","authors":"","doi":"10.1109/TSM.2022.3214957","DOIUrl":"https://doi.org/10.1109/TSM.2022.3214957","url":null,"abstract":"Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"35 4","pages":"706-707"},"PeriodicalIF":2.7,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/66/9932145/09932154.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3516258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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