Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96最新文献_第6页

Thermoelectric properties of Bi-Sb composite prepared by mechanical alloying method 机械合金化法制备Bi-Sb复合材料的热电性能

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553248

M. Miyajima, K. Takagi, H. Okamura, Gil-Geun Lee, Y. Noda, R. Watanabe

引用次数: 5

Synthesis and evaluation of thermoelectric multilayer films 热电多层膜的合成与评价

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553527

A. V. Wagner, R. Foreman, L. Summers, T. Barbee, J. Farmer

引用次数: 4

Theory of phonon drag thermopower 声子拖拽热电理论

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553297

P. Klemens

{"title":"Theory of phonon drag thermopower","authors":"P. Klemens","doi":"10.1109/ICT.1996.553297","DOIUrl":"https://doi.org/10.1109/ICT.1996.553297","url":null,"abstract":"The phonon contribution to the thermopower, S/sub p/, was first seen in germanium at low temperatures, and theoretically explained by Herring. Subsequently it was also predicted and identified in metals and alloys. In melts all phonons interact with the electron gas, and the theory is much simpler. In semiconductors only phonons of frequency below /spl omega//sub c/ can interact with electrons, where /spl omega//sub c//spl prop/T/sup 1/2 /. The magnitude of S/sub p/ depends on the relative strength of phonon scattering by electrons compared to either phonon-phonon or phonon-defect interactions. Phonon drag thermopower is important at low temperatures, but it can be appreciable also at higher temperatures, whenever the carrier concentration is large enough for the phonon-electron interaction to be strong below /spl omega//sub c/. This is the case in semiconductors used for energy conversion, where S/sub p/ can be comparable to k/e or 86 V/K, thus making a significant contribution to the figure of merit. To optimize that figure, one reduces the lattice thermal conductivity by point defects, which scatter high frequency phonons, while carrier scattering limits the contribution below /spl omega/c. Attempts have been made to scatter phonons of intermediate frequency by other imperfections. It is necessary to choose such imperfections carefully; if they scatter phonons below /spl omega//sub c/ strongly, the advantage of reducing the lattice thermal conductivity may be offset by a reduction in the thermopower.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130634888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Reliability theory in thermoelectricity 热电可靠性理论

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553308

L. Anatychuk, O. Luste

引用次数: 2

Optical, electrical and structural properties of polycrystalline /spl beta/-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon 电子束蒸发硅铁制备多晶/spl β /-FeSi2薄膜的光学、电学和结构特性

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553531

H. Katsumata, Y. Makita, H. Takahashi, Hajime Shibata, N. Kobayashi, Masataka Hasegawa, Shinji Kimura, A. Obara, J. Tanabe, S. Uekusa

{"title":"Optical, electrical and structural properties of polycrystalline /spl beta/-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon","authors":"H. Katsumata, Y. Makita, H. Takahashi, Hajime Shibata, N. Kobayashi, Masataka Hasegawa, Shinji Kimura, A. Obara, J. Tanabe, S. Uekusa","doi":"10.1109/ICT.1996.553531","DOIUrl":"https://doi.org/10.1109/ICT.1996.553531","url":null,"abstract":"Ferrosilicon (FeSi/sub 2/) grains (99.9%) were evaporated at room temperature onto a (100)-oriented n-type FZ Si substrate using electron beam deposition technique. Optical, electrical and structural properties were systematically investigated as a function of subsequent isochronal (2 hrs) annealing temperature (T/sub a/) in the range of 400/spl sim/950/spl deg/C. X-ray diffraction and Raman scattering analysis suggested the formation of polycrystalline /spl beta/-FeSi/sub 2/ above T/sub a/=500/spl deg/C, whereas above T/sub a/=800/spl deg/C, Si agglomeration was observed to form. The electrical resistivity of these samples reached a maximum (0.542 /spl Omega//spl middot/cm) at T/sub a/=700/spl deg/C, and then it decreased with increasing T/sub a/. Its decrease process was explained by considering the creation of Si vacancies, which could presumably be acting as holes. It is of great interest that in T/sub a/=600/spl sim/800/spl deg/C, the majority carrier converts from n- to p-type. Typical carrier concentrations and mobilities were determined to be /spl mu//sub n/=39.4 cm/sup 2//V/spl middot/sec, n/sub e/=6.59/spl times/10/sup 17/ cm/sup -3/ for n-type /spl beta/-FeSi/sub 2/ with T/sub a/=600/spl deg/C and /spl mu//sub h/=20.3 cm/sup 2//V/spl middot/sec, n/sub h/=2.22/spl times/10/sup 18/ cm/sup -3/ for p-type /spl beta/-FeSi/sub 2/ with T/sub a/=850/spl deg/C. Optical absorption measurements revealed that the nature of the bandgap varies from an indirect to direct one with increasing Ta.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123650748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Preparation and characterization of thermoelectric /spl beta/-FeSi2 phase dispersed with Si Si分散热电/spl β /-FeSi2相的制备与表征

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553258

Byoung-Gue Min, K. Jang, Dong-Hi Lee

引用次数: 0

High efficient program and carrier concentration FGM thermoelectric materials in the intermediate temperature region 中温区高效程序和载流子浓度FGM热电材料

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553279

Y. Noda, M. Orihashi, H. Kaibe, Y. Imai, I. Shiota, I. Nishida

{"title":"High efficient program and carrier concentration FGM thermoelectric materials in the intermediate temperature region","authors":"Y. Noda, M. Orihashi, H. Kaibe, Y. Imai, I. Shiota, I. Nishida","doi":"10.1109/ICT.1996.553279","DOIUrl":"https://doi.org/10.1109/ICT.1996.553279","url":null,"abstract":"As a part of the national project in Japan, the experimental examination and investigation have been carried out on PbTe compounds and their functionally graded material (FGM) with a view to an enhancement of thermoelectric energy conversion efficiency. The experiments consist of preparation and thermoelectric characterization of n-type PbTe melt-grown and sintered non-FGM and FGM. The electron concentration in the non-FGM single crystals was controlled in the range from 5/spl times/10/sup 23/ to 5/spl times/10/sup 25//m/sup 3/ by doping 700-6000 molppm PbI/sub 2/. The FGM structure for PbTe was obtained through the unidirectional solidification in a special growth ampule by doping 1500 and 3400 molppm PbI/sub 2/, in which carrier concentration varied continuously along the growth direction in one order of magnitude. An electron concentration at the bottom end of the FGM ingot doped with 1500 molppm PbI/sub 2/ was 0.82/spl times/10/sup 25//m/sup 3/, and the figure of merit was estimated to be 2/spl times/10/sup -3//K at 410 K. A 3-stage segmented FGM was prepared by hot-pressing subsequently the layers with electron concentrations of 3.6, 2.6 and 2.2/spl times/10/sup 25//m/sup 3/. It is found that the temperature dependence of electric figure of merit (/spl alpha//sup 2//spl sigma/) for the sintered FGM showed a broad peak and never came lower than those for the component non-FGM. The results indicate that high efficiency in thermoelectric energy conversion will be expected for well-designed FGM structure.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116415059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

High figure of merit in Ce-filled skutterudites 在满是ce的skutterudites中有很高的功绩

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553263

J. Fleurial, A. Borshchevsky, T. Caillat, D. Morelli, G. Meisner

{"title":"High figure of merit in Ce-filled skutterudites","authors":"J. Fleurial, A. Borshchevsky, T. Caillat, D. Morelli, G. Meisner","doi":"10.1109/ICT.1996.553263","DOIUrl":"https://doi.org/10.1109/ICT.1996.553263","url":null,"abstract":"New thermoelectric materials with superior transport properties at high temperatures have been discovered. These materials are part of the large family of skutterudites, a class of compounds which have shown a good potential for thermoelectric applications. The composition of these novel materials, called filled skutterudites, is derived from the skutterudite crystal structure and can be represented by the formula LnT/sub 4/Pn/sub 12/ (Ln=rare earth, Th; T=Fe, Rn, Os, Co, Rh, Ir; Pn=P, As, Sb). In these compounds, the empty octants of the skutterudite structure which are formed in the TPn/sub 3/ (/spl sim/T/sub 4/Pn/sub 12/) framework are filled with a rare earth element. Some of these compositions, based on CeFe/sub 4/Sb/sub 12/, have been prepared by a combination of melting and powder metallurgy techniques and have shown exceptional thermoelectric properties in the 350-700/spl deg/C temperature range. At room temperature, CeFe/sub 4/Sb/sub 12/ behaves as a p-type semimetal, but with a low thermal conductivity and surprisingly large Seebeck coefficient. These results are consistent with some recent band structure calculations on these compounds. Replacing Fe with Co in CeFe/sub 4/Sb/sub 12/ and increasing the Co:Fe atomic ratio resulted in an increase in the Seebeck coefficient values. The possibility of obtaining n-type conductivity filled skutterudites for Co:Fe values higher than 1:3 is currently being investigated. Measurements on bulk samples with a CeFe/sub 3.5/Co/sub 0.5/Sb/sub 12/ atomic composition and p-type conductivity resulted in dimensionless figure of merit ZT values of 1.4 at 600/spl deg/C.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116427357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 96

Temperature analysis of thermoelectric device of Cu4SnS4 with two dimension by boundary element method 边界元法分析二维Cu4SnS4热电器件的温度

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553307

S. Kondo, M. Hasaka, T. Morimura

引用次数: 2

Thermoelectric properties of doped bismuth-antimony single crystals 掺杂铋锑单晶的热电性质

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI: 10.1109/ICT.1996.553250

V. Grabov, O. Uryupin, M. G. Bondarenko

引用次数: 3