边界元法分析二维Cu4SnS4热电器件的温度

S. Kondo, M. Hasaka, T. Morimura
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引用次数: 2

摘要

用边界元法(BEM)计算了Cu/sub - 4/SnS/sub - 4/化合物构成的热电器件的二维温度分布。结果表明,温度分布与热电器件的长度密切相关。当器件长度很薄时,温度分布对器件长度方向的依赖性很强。在电流密度较小的情况下,如-1 A/cm/sup 2/,温度分布可以近似表示为拉普拉斯方程的解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature analysis of thermoelectric device of Cu4SnS4 with two dimension by boundary element method
Temperature distribution of a thermoelectric device composed of Cu/sub 4/SnS/sub 4/ compound in two-dimension is evaluated by the boundary element method (BEM). It is found that temperature distribution is strongly dependent on the length of the thermoelectric device. Temperature distribution shows very strong dependence of the direction of length of device when the length of device is very thin. In the case of small electric current density such as -1 A/cm/sup 2/, temperature distribution can be approximately expressed as the solution of Laplace equation.
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