{"title":"掺杂铋锑单晶的热电性质","authors":"V. Grabov, O. Uryupin, M. G. Bondarenko","doi":"10.1109/ICT.1996.553250","DOIUrl":null,"url":null,"abstract":"The thermoelectric phenomena in bismuth-antimony crystals doped by tellurium donor and tin acceptor impurities in temperature range 80/spl divide/300 K have been investigated. Crystals have been grown by horizontal zone recrystallization method with the use of regimes which provide their homogeneity. The area ranges of doping bismuth-antimony crystals in which thermoelectric figure of merit appears higher than in undoped crystals have been determined. The transport phenomena and thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals at y/spl les/0.001 at.% Sn and Te have been investigated in detail. It was shown that thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals doped y=0.001 at.% Sn in temperature range 80/spl divide/300 K exceeds thermoelectric figure of merit undoped and doped y/spl les/0.001 at.% Te crystals.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Thermoelectric properties of doped bismuth-antimony single crystals\",\"authors\":\"V. Grabov, O. Uryupin, M. G. Bondarenko\",\"doi\":\"10.1109/ICT.1996.553250\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The thermoelectric phenomena in bismuth-antimony crystals doped by tellurium donor and tin acceptor impurities in temperature range 80/spl divide/300 K have been investigated. Crystals have been grown by horizontal zone recrystallization method with the use of regimes which provide their homogeneity. The area ranges of doping bismuth-antimony crystals in which thermoelectric figure of merit appears higher than in undoped crystals have been determined. The transport phenomena and thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals at y/spl les/0.001 at.% Sn and Te have been investigated in detail. It was shown that thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals doped y=0.001 at.% Sn in temperature range 80/spl divide/300 K exceeds thermoelectric figure of merit undoped and doped y/spl les/0.001 at.% Te crystals.\",\"PeriodicalId\":447328,\"journal\":{\"name\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1996.553250\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1996.553250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermoelectric properties of doped bismuth-antimony single crystals
The thermoelectric phenomena in bismuth-antimony crystals doped by tellurium donor and tin acceptor impurities in temperature range 80/spl divide/300 K have been investigated. Crystals have been grown by horizontal zone recrystallization method with the use of regimes which provide their homogeneity. The area ranges of doping bismuth-antimony crystals in which thermoelectric figure of merit appears higher than in undoped crystals have been determined. The transport phenomena and thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals at y/spl les/0.001 at.% Sn and Te have been investigated in detail. It was shown that thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals doped y=0.001 at.% Sn in temperature range 80/spl divide/300 K exceeds thermoelectric figure of merit undoped and doped y/spl les/0.001 at.% Te crystals.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
