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2009 13th International Workshop on Computational Electronics最新文献

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Electroluminescence from a Quantum-Well LED using NEGF 利用负能量场的量子阱LED的电致发光
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091112
S. Steiger, R. Veprek, B. Witzigmann
{"title":"Electroluminescence from a Quantum-Well LED using NEGF","authors":"S. Steiger, R. Veprek, B. Witzigmann","doi":"10.1109/IWCE.2009.5091112","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091112","url":null,"abstract":"Nonequilibrium Green's functions (NEGF) are employed to model carrier transport and luminescence in a single-quantum-well light-emitting diode (LED). The sound theoretical formalism allows for a consistent description of coherence loss as well as fundamental scattering mechanisms and reveals details about physical phenomena such as the quantum-confined Stark and Franz-Keldysh effects, tunneling and carrier capture. A comparison to semiclassical results is made and similarities as well as differences are highlighted.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124154918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
3D Finite-Element Analysis of Metal Nanocrystal Memories Variations 金属纳米晶记忆体变化的三维有限元分析
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091077
J. Shaw, T. Hou, H. Raza, E. Kan
{"title":"3D Finite-Element Analysis of Metal Nanocrystal Memories Variations","authors":"J. Shaw, T. Hou, H. Raza, E. Kan","doi":"10.1109/IWCE.2009.5091077","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091077","url":null,"abstract":"We have shown the process variation effects from nanocrystal size, density, registry and gate length in 20-90 nm metal nanocrystal memory technology by 3D finite-element analysis. Conventional ID analysis in the gate stack will result in severe miscalculation of bit-error-rate due to neglecting the fringing fields and percolation path in the memory cell. We also present the statistical metrology on memory windows from nanocrystal placement control and the use of nanowire devices. We conclude that the self-assembled nanocrystals in the gate stack can fit the parametric yield required for 20 nm technology.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124251834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi Subband Deterministic Simulation of an Ultra-thin Double Gate MOSFET with 2D Electron Gas 二维电子气体超薄双栅MOSFET的多子带确定性仿真
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091125
Tiao Lu, G. Du, Haiyan Jiang, Xiaoyan Liu, Pingwen Zhang
{"title":"Multi Subband Deterministic Simulation of an Ultra-thin Double Gate MOSFET with 2D Electron Gas","authors":"Tiao Lu, G. Du, Haiyan Jiang, Xiaoyan Liu, Pingwen Zhang","doi":"10.1109/IWCE.2009.5091125","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091125","url":null,"abstract":"We present a self-consistent multi subband deter- ministic solver of the Boltzmann transport equation of the two dimensional (2D) electron gas. The Sch¨ odinger equation at each slice in the confinement direction and the two dimensional Poisson equation are self-consistently solved with the Boltzmann transport equation. The energy quantization and the scattering of the 2D electron gas are included. We apply this solver to an ultra-thin body double gate MOSFET and show the influence of the 2Dk scattering to the electron transport.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129112565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Charge-based Mobility Modeling for Organic Semiconductors 基于电荷的有机半导体迁移率模型
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091090
T. Maiti, C. Maiti
{"title":"Charge-based Mobility Modeling for Organic Semiconductors","authors":"T. Maiti, C. Maiti","doi":"10.1109/IWCE.2009.5091090","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091090","url":null,"abstract":"Charge transport in organic semiconductors is investigated and a theoretical description of small polaron dc conductivity model is presented. The approach is based on Frohlich Hamiltonian. The model is implemented in a device simulator to analyze the electrical characteristics of pentacene-based Organic Thin Film Transistors (OTFT).","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114210817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Doping Concentration and Barrier Thickness on Rashba Spin Splitting in Al0.5Ga0.5N/GaN Heterostructures 掺杂浓度和势垒厚度对Al0.5Ga0.5N/GaN异质结构Rashba自旋分裂的影响
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091110
M. Li, R. Zhang, Z. Zhang, W. Yan, B. Liu, D. Fu, C. Z. Zhao, Z. Xie, X. Xiu, Y. Zheng
{"title":"Effect of Doping Concentration and Barrier Thickness on Rashba Spin Splitting in Al0.5Ga0.5N/GaN Heterostructures","authors":"M. Li, R. Zhang, Z. Zhang, W. Yan, B. Liu, D. Fu, C. Z. Zhao, Z. Xie, X. Xiu, Y. Zheng","doi":"10.1109/IWCE.2009.5091110","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091110","url":null,"abstract":"Schrodinger equation and Poisson equation are solved self-consistently for Al 0.5 Ga 0.5 N/GaN heterojunctions grown along the c axis, then the distribution of electrons and the exact energy of all the bounded states confined in heterojunctions are gotten, and the electrons are found to take up the first two subbands. Considerable magnitude of Rashba spin splitting for the first subband at the Fermi level is obtained. The changes of Rashba spin splitting with barrier thickness, and doping concentration in the barrier are calculated. The results show that Rashba spin splitting in Al 0.5 Ga 0.5 N/GaN heterojunctions increase with doping concentration and the thickness of the barrier, and the internal electric field caused by piezoelectric polarization and the spontaneous polarization is crucial for considerable Rashba spin splitting in Al 0.5 Ga 0.5 N/GaN heterojunctions. Therefore, we can change barrier thickness and doping concentration to modulate internal electric field and then Rashba spin splitting in Alo 0.5 Ga 0.5 N/GaN heterojunctions.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116731854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AC Small-Signal Response of Graphene Nanoribbons 石墨烯纳米带的交流小信号响应
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091084
Zhidong Chen, Jinyu Zhang, Zhiping Yu
{"title":"AC Small-Signal Response of Graphene Nanoribbons","authors":"Zhidong Chen, Jinyu Zhang, Zhiping Yu","doi":"10.1109/IWCE.2009.5091084","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091084","url":null,"abstract":"The ac small-signal conductance of graphene nanoribbons (GNRs) was investigated using non-equilibrium Green's function. Simulation results of ac conductance of GNRs with and without the edge effect are presented. The edge effect and the influence of a slight change in width have great impacts on the ac conductance of GNRs. The ac conductance of GNRs presents oscillatory response with frequency. At low frequencies, a metallic GNR displays an inductive behavior, whereas a semi-conductive GNR displays a capacitive behavior.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132789348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Parallel Implementation of Boltzmann Transport Simulation of Carbon Nanotubes 碳纳米管玻尔兹曼输运模拟的并行实现
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091137
Z. Akšamija, Mohamed Mohamed, Umberto Ravaioli
{"title":"Parallel Implementation of Boltzmann Transport Simulation of Carbon Nanotubes","authors":"Z. Akšamija, Mohamed Mohamed, Umberto Ravaioli","doi":"10.1109/IWCE.2009.5091137","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091137","url":null,"abstract":"This works treats electronic transport in SWNTs in the Boltzmann Transport equation (BTE) formalism. The BTE is solved self-consistently with the Poisson equation and iterated in time using an upwinding finite-difference scheme until a steady-state is reached. Phonon scattering is included through a relaxation time based on experimental values reported in the literature. The problem is parallelized by dividing the real space into strips, where each strip is assigned to one processing element to minimize communication overhead. The implementation was tested on a many-processor cluster and shows good speed-up over the serial code. This demonstrates that the code is capable of excellent scaling to large supercomputing machines for large-scale parallel simulation of nanotubes, as well as other similar 1-dimensional materials like nanoribbons and nanowires.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115508165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Computational Study on the Performance Comparison of Monolayer and Bilayer Zigzag Graphene Nanoribbon FETs 单层和双层之字形石墨烯纳米带场效应管性能比较的计算研究
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091098
K. Lam, G. Liang
{"title":"Computational Study on the Performance Comparison of Monolayer and Bilayer Zigzag Graphene Nanoribbon FETs","authors":"K. Lam, G. Liang","doi":"10.1109/IWCE.2009.5091098","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091098","url":null,"abstract":"In our ab initio study on the device performance of nitrogen-doped monolayer zigzag GNR (ZGNR) FETs, an increase in ZGNR width from 0.92 nm to 1.78 nm degrades the I max |I min ratio due to the decrease in the energy bandgap (Eg) which causes the I min to increase. It is also observed that the presence of vacancy at the edges of the channel ribbon can also open up an Eg in ZGNRs as nitrogen dopants, and the performance of such device depends greatly on the vacancy concentration. In addition, simulation was carried out on the nitrogen-doped bilayer ZGNR FET and comparing to the monolayer ZGNR FET, the bilayer device provides a larger current while the I max |I min is lowered.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117072230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ultrascaled Silicon Nanowires as Efficient Thermoelectric Materials 作为高效热电材料的超尺度硅纳米线
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091160
E. Ramayya, I. Knezevic
{"title":"Ultrascaled Silicon Nanowires as Efficient Thermoelectric Materials","authors":"E. Ramayya, I. Knezevic","doi":"10.1109/IWCE.2009.5091160","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091160","url":null,"abstract":"The room-temperature thermoelectric figure of merit (ZT) of highly doped silicon nanowires (SiNWs) of square cross section was calculated by solving the electron and phonon Boltzmann transport equations with a proper account of the two dimensional confinement of both electrons and phonons. The ZT in SiNWs is almost two orders of magnitude larger than that of bulk silicon. The enhancement of ZT in SiNWs occurs primarily because of strong phonon-boundary scattering that degrades the lattice thermal conductivity by about two orders of magnitude from its value in bulk silicon. With decreasing wire cross section, the electrical conductivity (sigma) and thermal conductivity (k) decrease, whereas the Seebeck coefficient (S) increases. Therefore, the ZT variation with cross section is nonmonotonic, with ZT maximal for a wire of cross section 4 times 4 nm 2 . Boundary roughness scattering indeed proves to have a significant effect on both electronic and thermal transport in SiNWs.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124936053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations O-Si-O角度波动导致Si-O键断裂率变化的统计
2009 13th International Workshop on Computational Electronics Pub Date : 2009-05-27 DOI: 10.1109/IWCE.2009.5091156
S. Tyaginov, V. Sverdlov, W. Gos, T. Grasser
{"title":"Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations","authors":"S. Tyaginov, V. Sverdlov, W. Gos, T. Grasser","doi":"10.1109/IWCE.2009.5091156","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091156","url":null,"abstract":"The McPherson model for the Si-O bond-breakage has been extended in a manner to capture the effect of O-Si-O angle variations on the breakage rate. Using a distribution function of the O-Si-O bond angle, a series of breakage rate probability densities has been calculated as a function of the applied electric field. Using such a distribution function we have calculated the mean vale and the standard deviation of the breakage rate and compare them to the nominal rate corresponding to the fixed angle of 109.48deg observed in crystalline alpha-quartz. It is shown that the mean value of this rate is substantially higher than and the standard deviation is comparable with the nominal rate. Obtained dependencies demonstrate a linear trend in a log-fin space, thereby validating the thermo-chemical model for the time-dependent-dielectric breakdown also in the case of non-uniform O-Si-O angle distribution typical for amorphous silica.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126814130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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