Lucas Machado, Mayler G. A. Martins, V. Callegaro, Renato P. Ribas, A. Reis
{"title":"Iterative remapping respecting timing constraints","authors":"Lucas Machado, Mayler G. A. Martins, V. Callegaro, Renato P. Ribas, A. Reis","doi":"10.1109/ISVLSI.2013.6654639","DOIUrl":"https://doi.org/10.1109/ISVLSI.2013.6654639","url":null,"abstract":"This paper proposes a novel iterative remapping approach for area reduction while still respecting the timing constraints of the design specification. The use of complex gates can potentially reduce cell area, but they have to be chosen wisely to preserve timing constraints while remapping. Commercial tools for logic synthesis work better with simple cells and are not fully capable of taking advantage of complex cells; the strategy proposed herein is aimed to better exploit complex cells during technology mapping. The proposed iterative remapping approach can exploit a larger amount of logic gates, reducing global circuit area and respecting global timing constraints. Experiments show area improvement of 8% on average and up to 15% for a subset of combinational mapped circuits of IWLS 2005 benchmarks.","PeriodicalId":439122,"journal":{"name":"2013 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129706514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ground gated 8T SRAM cells with enhanced read and hold data stability","authors":"Hailong Jiao, V. Kursun","doi":"10.1109/ISVLSI.2013.6654622","DOIUrl":"https://doi.org/10.1109/ISVLSI.2013.6654622","url":null,"abstract":"A new asymmetrically ground-gated eight-transistor (8T) static random access memory (SRAM) circuit with enhanced data stability characteristics is proposed in this paper. A robust and low leakage SLEEP mode with data retention capability is provided by utilizing asymmetrical ground gating in an idle memory array. The data stability is enhanced by 2.22× and 53.54% during read operations and data retention SLEEP mode, respectively, with the proposed asymmetrically ground-gated 8T memory circuit as compared to a conventional ground-gated six-transistor (6T) SRAM cell in a TSMC 65nm CMOS technology. The overall electrical quality is also enhanced by 2.84× with the proposed asymmetrically ground-gated 8T SRAM circuit as compared to the conventional ground-gated 6T memory array.","PeriodicalId":439122,"journal":{"name":"2013 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123009619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Manuzzato, F. Campi, D. Rossi, V. Liberali, D. Pandini
{"title":"Exploiting body biasing for leakage reduction: A case study","authors":"A. Manuzzato, F. Campi, D. Rossi, V. Liberali, D. Pandini","doi":"10.1109/ISVLSI.2013.6654635","DOIUrl":"https://doi.org/10.1109/ISVLSI.2013.6654635","url":null,"abstract":"In modern System-on-Chip (SoC) designs, the fulfillment of power constraints is one of the most important and challenging tasks. In this framework, the use of both voltage scaling and body biasing techniques is a mainstream strategy largely used for leakage power reduction. This work presents a case study to evaluate the impact of these techniques on an industrial microprocessor-based design. We analyze the impact of body biasing in terms of area penalties and routing efforts. Furthermore, a complete analysis flow is proposed to evaluate the achievable leakage reduction and the expected performance degradation. In order to overcome the limited spectrum of operating configurations covered by a given library set, we propose a practical and effective methodology based on a standard digital design and characterization flow. By using this procedure, a designer can efficiently evaluate the most appropriate leakage/timing trade-offs, and consequently determine the best supply voltage and biasing configurations to implement the design. The experimental results on our testcase demonstrate that body biasing leads to a leakage reduction up to six times with respect to the standard reference supply voltage configuration.","PeriodicalId":439122,"journal":{"name":"2013 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123664606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Embedded systems design for smart system integration","authors":"M. Glesner, F. Philipp","doi":"10.1109/ISVLSI.2013.6654611","DOIUrl":"https://doi.org/10.1109/ISVLSI.2013.6654611","url":null,"abstract":"Summary form only given. Smart or intelligent system is a new technology term that will be found in many applications in our daily life and industries in the future for examples in energy management, medical applications and healthcare management, industrial automation and automotive. Based on its technological term, smart systems should have capabilities to solve very complex problems, including taking over human cognitive functions. Due to the exponential increase of world energy demand, in which between 2010 and 2030 is estimated to be 45%, energy management will be one of the most urgent topics of the century and a significant driver for the evolution of semiconductors and electronics products. The important issues in the energy management are efficiency and reliability. Those requirements initiate the movement of power technology trend from traditional into smart grids concept. Cybersecurity and control systems for instance will be important topics for future smart grid systems. In medical applications and healthcare management, smart products are mainly dedicated to improve the quality of health treatments and rehabilitations. The key components of the products are sensors (biomedical sensors). They should be miniaturized, which is enabled by using Micro-Electro-Mechanical System (MEMS) technology, in order to minimize the physical effect on the biologic system. The key factor of the smart systems is new inventions in the fields of nanotechnology, advanced materials, biotechnology, photonic technology and nanoelectronics. The innovation of efficient computing algorithms should be a challenging issue to implement the nanoelectronic products. The integration of the nanoelectronic products into smart systems should consider both arts and cost aspect. Therefore, the miniaturization of smart products, which is affected by efficient computing algorithms and nano-scale technologies, will be an interesting feature for end-users on market.","PeriodicalId":439122,"journal":{"name":"2013 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121257465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Otacilio de Araujo Ramos Neto, A. C. Cavalcanti, R. Altafim
{"title":"Comparison between three RTL implementations of the multiplicative inverse calculation of galois field elements based on a standard cells library","authors":"Otacilio de Araujo Ramos Neto, A. C. Cavalcanti, R. Altafim","doi":"10.1109/ISVLSI.2013.6654660","DOIUrl":"https://doi.org/10.1109/ISVLSI.2013.6654660","url":null,"abstract":"Most problems found during implementation of Galois Field (GF) arithmetic in Very-Large-Scale-Integration (VLSI) circuits, are the area occupied by the blocks responsible for the product of two elements and by the calculation of the multiplicative inverse of an element. This last, is the main routine applied on the S-Box and Inv S-Box functions of the Advanced Encryption Standard (AES) Rijndael algorithm. Therefore, on a complete implementation of the AES algorithm in hardware, one may expect that approximate 50% of the circuit area is occupied only with those instances. As an example, a simple pipeline implementation of the Rijndael algorithm may require more than 160 instances of the S-Box blocks, only in the encrypter of a GF (28). Since the multiplicative inverse applied in S-Box or Inv S-Box can be implemented by different methods and they consume considerable space in a VLSI implementation, it is desired to determine the most appropriated solution for VLSI circuits. Therefore, in this work we implemented three different approaches for the calculation of the multiplicative inverse in a GF (28) and map them into digital blocks. The digital blocks were then transcribed into a hardware description language (HDL), converted to Register Transfer Level (RTL) and synthesized over the same standard cells library. A comparison between these implementations regarding the estimated circuit area, the number of clock cycles and the maximum operation frequency, for a GF (28) of the AES are here presented.","PeriodicalId":439122,"journal":{"name":"2013 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122120109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Flach, Tiago Reimann, G. Posser, M. Johann, R. Reis
{"title":"Simultaneous gate sizing and Vth assignment using Lagrangian Relaxation and delay sensitivities","authors":"G. Flach, Tiago Reimann, G. Posser, M. Johann, R. Reis","doi":"10.1109/ISVLSI.2013.6654627","DOIUrl":"https://doi.org/10.1109/ISVLSI.2013.6654627","url":null,"abstract":"This paper presents a fast and effective approach to cell-type selection and Vth assignment. In our approach, initially a solution without slew and load violation is generated. Then, the Lagrangian Relaxation considering lambda-delay sensitivities is used to reduce leakage power trying to keep the circuit without timing and load violations. If the set of cell-types given by Lagrangian Relaxation produces a circuit with negative slack, a timing recovery method is applied to find near-zero positive slack. The solution without negative slack is introduced to a power reduction step. The sizing produced using our approach could achieve up to 28% in power reduction compared to state of the art works. The leakage power of our solutions is, on average, 9.53% smaller than [1] and 12.45% smaller than [2]. Furthermore, the method is 19× faster than [1] and 1.18× faster than [2].","PeriodicalId":439122,"journal":{"name":"2013 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129615656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xin Li, Wulong Liu, Haixiao Du, Yu Wang, Yuchun Ma, Huazhong Yang
{"title":"Whitespace-aware TSV arrangement in 3D clock tree synthesis","authors":"Xin Li, Wulong Liu, Haixiao Du, Yu Wang, Yuchun Ma, Huazhong Yang","doi":"10.1109/ISVLSI.2013.6654632","DOIUrl":"https://doi.org/10.1109/ISVLSI.2013.6654632","url":null,"abstract":"Through-silicon via (TSV) could provide vertical connections between different dies in three-dimensional integrated circuits (3D ICs), but the significant silicon area occupied by TSVs may bring great challenge to designers in 3D clock tree synthesis (CTS) because only few whitespace blocks can be used for clock TSVs after floorplan and placement. Unlike most of the published previous works that ignore whitespace, this paper for the first time proposes a whitespace-aware TSV arrangement algorithm in 3D CTS. The algorithm consists of three stages: sink pre-clustering, whitespace-aware three-dimensional method of means and medians (3D-MMM) topology generation and deferred-merge embedding (DME) merging segment reconstruction. We also present a TSV whitespace-aware 3D CTS flow. Experiment results show that our proposed algorithm is more practical and efficient, the average skew and power can be reduced by 49.2% and 1.9% respectively, compared to the traditional 3D-MMM based CTS method with TSV moving adjustment.","PeriodicalId":439122,"journal":{"name":"2013 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125263209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}