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2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献

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Supply crisis parts commodities management during unplanned FAB shutdown recovery 工厂计划外停机恢复期间的供应危机部件管理
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792485
Hoon Kang, Salvin Macwan, Wes Van Erp, Josephine Quek, Bastiaan Saris, Gary R. Huffman, S. Rogers
{"title":"Supply crisis parts commodities management during unplanned FAB shutdown recovery","authors":"Hoon Kang, Salvin Macwan, Wes Van Erp, Josephine Quek, Bastiaan Saris, Gary R. Huffman, S. Rogers","doi":"10.1109/asmc54647.2022.9792485","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792485","url":null,"abstract":"Supplier management swift strategy development and its deployment, specifically focused on semiconductor commodities parts management will be needed to overcome the unplanned FAB manufacturing facility shutdown. The mechanism development and application on the parts commodities management within procurement organization will be the key enabler for the accelerated unplanned FAB manufacturing facility shutdown recovery. Crisis driving the unplanned FAB shutdown includes natural catastrophic events resulting in power failure, system failure supporting manufacturing facility operations and supply chain crisis. Paper further expands on efficient agile mechanism logic and its application deployed to enable the accelerated recovery of the FAB manufacturing facility in the pre-determined amount of time in order to minimize the revenue impact.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115236095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ILD CMP Polishing Pad and Disk Characterization ILD CMP抛光垫和磁盘特性
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792492
Liew Siew Wan, Chong Yew Siew
{"title":"ILD CMP Polishing Pad and Disk Characterization","authors":"Liew Siew Wan, Chong Yew Siew","doi":"10.1109/asmc54647.2022.9792492","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792492","url":null,"abstract":"CMP performance is driven by CMP tool, process setting polishing pad, slurry, and diamond disk. The combination effect of input variables on pad material and disk properties were investigated for the process characterization of ILD oxide CMP. The purpose of this study is to evaluate the polishing performance based on ILD CMP used in colloidal silica-based acidic slurry in terms of pad material variation. Polishing key performances are removal rate stability, within wafer non uniformity and defectivity. The goal was to determine a polishing pad which will be able to achieve higher throughput and longer consumable lifetime in ILD CMP process.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"54 45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127450422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enabling Glass Wafers in a Si Fab 在硅晶圆厂中启用玻璃晶圆
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792475
Jay Zhang, Chee-Hau Ng, S. Kouassi
{"title":"Enabling Glass Wafers in a Si Fab","authors":"Jay Zhang, Chee-Hau Ng, S. Kouassi","doi":"10.1109/asmc54647.2022.9792475","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792475","url":null,"abstract":"Glass has unique properties that makes it attractive for certain applications, such as transparency for optical components and low nonlinearity for RF. The Si industry has created highly sophisticated process capabilities in terms of feature size and high precision, among other features. Combining the two creates new possibilities not only in device performance, but also scale economies. This paper discusses challenges in using glass in a Si fab and how to overcome these challenges.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123297441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On-wafer organic defect review and classification with universal surface enhanced Raman spectroscopy 基于通用表面增强拉曼光谱的晶圆上有机缺陷综述与分类
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792487
A. Altun
{"title":"On-wafer organic defect review and classification with universal surface enhanced Raman spectroscopy","authors":"A. Altun","doi":"10.1109/asmc54647.2022.9792487","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792487","url":null,"abstract":"The paper will introduce a novel 300mm wafer defect review and characterization technology based on universal on-wafer surface-enhanced Raman spectroscopy. The technology can perform high-throughput physical and chemical classification of defects using surface-enhanced optical images and enhanced Raman spectroscopy, respectively. The paper will demonstrate test data regarding size distributions, optical images and Raman spectra of particles of process liquids as well as test wafers.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114249644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Full Wafer Process Control Through Object Detection Using Region-Based Convolutional Neural Networks 基于区域卷积神经网络的目标检测全晶圆过程控制
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792479
T. Alcaire, D. Le Cunff, J. Tortai, S. Soulan, V. Brouzet, R. Duru, Christophe Euvrard
{"title":"Full Wafer Process Control Through Object Detection Using Region-Based Convolutional Neural Networks","authors":"T. Alcaire, D. Le Cunff, J. Tortai, S. Soulan, V. Brouzet, R. Duru, Christophe Euvrard","doi":"10.1109/asmc54647.2022.9792479","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792479","url":null,"abstract":"Full wafer measurement techniques are used in the semiconductor industry to acquire information at a large scale to control process variation or detect potential defects. This process usually results in the generation of full wafer images, containing various objects that need to be identified to evaluate their impact on the final product performance. Artificial intelligence is very powerful to automate this identification routine. In this paper, we present the application of Region-based Convolutional Neural Networks (RCNN) for enhanced process control from full wafer images gathered by two industrial metrology equipments.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129521948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of Se-Fe2O3-based Schottky Diode Using Cantilever-based Ag-contact Printing Technology : Topic: NS/NC - Non-silicon and Non-CMOS 利用悬臂式银触点印刷技术制备se - fe2o3基肖特基二极管:主题:NS/NC -非硅和非cmos
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792480
Joshua Roy Palathinkal, Sumit Majumder, Thomas T. Daniel, V. Yadav, R. P. Palathinkal
{"title":"Fabrication of Se-Fe2O3-based Schottky Diode Using Cantilever-based Ag-contact Printing Technology : Topic: NS/NC - Non-silicon and Non-CMOS","authors":"Joshua Roy Palathinkal, Sumit Majumder, Thomas T. Daniel, V. Yadav, R. P. Palathinkal","doi":"10.1109/asmc54647.2022.9792480","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792480","url":null,"abstract":"The fabrication of a sub-10 μm Se-Fe2O3 channel Schottky diode built using cantilever-based Ag-contact printing technology is discussed in this work. There are two phases to the fabrication process. In the first phase, the Ag electrodes are produced using a state-of-the-art micro-girder (μG) cantilever-based in-house printing system. The second phase involves dropcasting the dispersion of leaf-structured Se-Fe2O3 in deionized (DI) water between the printed electrodes. The printed device’s electrical response is observed to be similar to that of a Schottky diode. An analytical model based on the thermionic emission theory was used to verify these features with the acquired experimental results. The ideality factor of the device is extracted as 3.44. At room temperature, the device exhibits a barrier height of 0.72 eV and series resistance of 159 kΩ. As the novel μG printing technology is in its early stages of development, the results presented in this work are preliminary in nature and work on further optimization is being carried out.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123644555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of Twisting and Line-Edge Roughness of 3D NAND Deep Trench Etching on Yield Enhancement : AEPM: Advanced Equipment Processes and Materials 提高3D NAND深槽刻蚀的扭曲和线边粗糙度对良率的影响:先进的设备、工艺和材料
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792529
Yao-An Chung, Yuan-Chieh Chiu, Yu-Fan Chang, Hong-Ji Lee, N. Lian, Tahone Yang, K. Chen, Chih-Yuan Lu
{"title":"Improvement of Twisting and Line-Edge Roughness of 3D NAND Deep Trench Etching on Yield Enhancement : AEPM: Advanced Equipment Processes and Materials","authors":"Yao-An Chung, Yuan-Chieh Chiu, Yu-Fan Chang, Hong-Ji Lee, N. Lian, Tahone Yang, K. Chen, Chih-Yuan Lu","doi":"10.1109/asmc54647.2022.9792529","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792529","url":null,"abstract":"Structural bending of deep slit trench patterns happened in the 3D NAND development. The drawback results in the circuit suffering from missed VIA connections with wordlines (WLs) and common source line (CSL), and unexpectedly high leakage current to impact device operation. Reviewing the images of physical failure analyses (PFA), the slit profile twisting that happened during plasma etching leads to worse line-edge roughness (LER) at the bottom of 12 μm-deep trench. It was also suspected that imbalanced polymer accumulated on the sidewalls of hard mask during etching enhances the electron shielding effect, which makes asymmetrical incident ions trajectory angle worsen the bottom LER. The issues mentioned in this study can be successfully eliminated by etch recipe optimization. The electrical qualification of the slit trench profile requires excellent isolation between bit-lines (BLs) and WLs with less than 1nA of leakage current.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124355137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Introduction of equipment level FDC system for semiconductor wet-cleaning equipment optimization and real-time fault detection 介绍了用于半导体湿清洗设备优化和实时故障检测的设备级FDC系统
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792476
Namjin Kim, Hojin Choi, J. Chun, Jongpil Jeong
{"title":"Introduction of equipment level FDC system for semiconductor wet-cleaning equipment optimization and real-time fault detection","authors":"Namjin Kim, Hojin Choi, J. Chun, Jongpil Jeong","doi":"10.1109/asmc54647.2022.9792476","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792476","url":null,"abstract":"The proposed paper presents an equipment level FDC system for the optimization and anomaly detection of semiconductor equipment. Through the equipment level FDC(Fault Detection and Classification) system, various data in the equipment can be converted into meaningful and accurate analysis data through context mapping to facilitate analysis of the management and condition of the equipment. In addition, it is possible to proactively identify and respond to problems at the equipment level before identifying and responding to problems on the host by processing data of diverse equipment in real time.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"17 S20","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132478798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Observation of Pattern Sensitivity In Laser anneal : Topic/category Yield Enhancement 激光退火中图案灵敏度的观察:主题/类别良率的提高
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792515
R. van Roijen, Mark Hurley, P. Mirdha, Jeff Brown
{"title":"Observation of Pattern Sensitivity In Laser anneal : Topic/category Yield Enhancement","authors":"R. van Roijen, Mark Hurley, P. Mirdha, Jeff Brown","doi":"10.1109/asmc54647.2022.9792515","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792515","url":null,"abstract":"At advanced nodes, there is a need for high activation of dopants to achieve the required device performance. At the same time, the high-temperature anneal needed to drive the activation might cause excessive diffusion that conflicts with the tight distribution required for devices with very small dimensions. Laser anneal has been successfully used to meet both requirements. One way to gauge the laser anneal performance is measuring the resistance of a doped silicon test structure. While this is generally very dependable that under certain conditions, we have discovered pattern factor can play a role in the laser anneal process. We show what conditions can cause the deviation and discuss how to evaluate resistance data to ensure a correct interpretation of electrical characteristics.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131508301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Identification and Control of Surface Charge Defect Induced by Wafer Spin-Cleaning Process 晶圆自旋清洗过程中表面电荷缺陷的识别与控制
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2022-05-02 DOI: 10.1109/asmc54647.2022.9792497
J. Jeong, Dukmin Ahn, Myung-Seon Kim, Eunyoung Han, Youngjeong Kim, Joong Jung Kim
{"title":"Identification and Control of Surface Charge Defect Induced by Wafer Spin-Cleaning Process","authors":"J. Jeong, Dukmin Ahn, Myung-Seon Kim, Eunyoung Han, Youngjeong Kim, Joong Jung Kim","doi":"10.1109/asmc54647.2022.9792497","DOIUrl":"https://doi.org/10.1109/asmc54647.2022.9792497","url":null,"abstract":"An arcing-like phenomenon taking place around the wafer center area during the wafer spin-cleaning process was investigated. Due to the high-speed rotating operation, friction between materials with very high resistivity such as DI(Deionized) water, dielectric films and non-conductive clean tool hardware builds up surface charge on the wafer. Then it causes arcing or local Si damage by an instantaneous discharge when conductive chemical mixture contact with the surface. In this study, a detailed evolution of the accumulated wafer surface charge was monitored by the real-time electro-static meter, and the disruptive discharging phenomenon was successfully revealed. In order to control the surface charge defects in spin-cleaning process, it was found to be effective to implement an improved cleaning sub-process adding a wafer backside pre-injection step, which safely releases the accumulated surface charge, as well as to adopt a conductive tool chuck and CO2 dissolved water. In addition, it was found through CFD(Computational fluid dynamics) analysis that the charge distribution of the wafer surface is greatly affected by flow characteristics such as the wall shear stress in the DI water rinse process.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123179978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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