{"title":"ILD CMP Polishing Pad and Disk Characterization","authors":"Liew Siew Wan, Chong Yew Siew","doi":"10.1109/asmc54647.2022.9792492","DOIUrl":null,"url":null,"abstract":"CMP performance is driven by CMP tool, process setting polishing pad, slurry, and diamond disk. The combination effect of input variables on pad material and disk properties were investigated for the process characterization of ILD oxide CMP. The purpose of this study is to evaluate the polishing performance based on ILD CMP used in colloidal silica-based acidic slurry in terms of pad material variation. Polishing key performances are removal rate stability, within wafer non uniformity and defectivity. The goal was to determine a polishing pad which will be able to achieve higher throughput and longer consumable lifetime in ILD CMP process.","PeriodicalId":436890,"journal":{"name":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"54 45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/asmc54647.2022.9792492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
CMP performance is driven by CMP tool, process setting polishing pad, slurry, and diamond disk. The combination effect of input variables on pad material and disk properties were investigated for the process characterization of ILD oxide CMP. The purpose of this study is to evaluate the polishing performance based on ILD CMP used in colloidal silica-based acidic slurry in terms of pad material variation. Polishing key performances are removal rate stability, within wafer non uniformity and defectivity. The goal was to determine a polishing pad which will be able to achieve higher throughput and longer consumable lifetime in ILD CMP process.