2016 IEEE International Integrated Reliability Workshop (IIRW)最新文献_第3页

On the effect of interface traps on the carrier distribution function during hot-carrier degradation 热载流子降解过程中界面陷阱对载流子分布函数的影响

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2016.7904911

S. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser

{"title":"On the effect of interface traps on the carrier distribution function during hot-carrier degradation","authors":"S. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser","doi":"10.1109/IIRW.2016.7904911","DOIUrl":"https://doi.org/10.1109/IIRW.2016.7904911","url":null,"abstract":"We study the effect of interface states, generated during hot-carrier stress, on the carrier energy distribution functions (DFs) and check whether this effect perturbs the results of our hot-carrier degradation model. These studies are performed using SiON nMOSFETs with a gate length of 65 nm as exemplary devices. We carry out simulations with different values of the spatially uniform interface state density (Nit) as well as with a coordinate dependent Nit evaluated for real stress conditions. In both cases, the effect of Nit on carrier distribution functions appears to be strong. As for the degradation characteristics, we show that Nit profiles computed with perturbed distribution functions can be substantially different from those obtained with non-perturbed DFs, especially at long stress times. The same trend is visible also for changes in the linear drain current. Additional simulations performed for operating conditions with and without the effect of Nit show that if this effect is not taken into account, this leads to severe underestimation of the device life-time.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124899747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs 偏置温度不稳定性及其与闪烁(1/f)噪声的关系

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2016.7904913

Y. Ding, D. Misra, P. Srinivasan

引用次数: 0

The sources of erase voltage variability in split-gate flash memory cell arrays 分栅闪存单元阵列中擦除电压变异性的来源

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2016.7904890

Y. Tkachev, J. Walls

引用次数: 2

SiC power device reliability SiC功率器件可靠性

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2016.7904895

D. Gajewski, B. Hull, D. Lichtenwalner, S. Ryu, E. Bonelli, H. Mustain, Gangyao Wang, S. Allen, J. Palmour

{"title":"SiC power device reliability","authors":"D. Gajewski, B. Hull, D. Lichtenwalner, S. Ryu, E. Bonelli, H. Mustain, Gangyao Wang, S. Allen, J. Palmour","doi":"10.1109/IIRW.2016.7904895","DOIUrl":"https://doi.org/10.1109/IIRW.2016.7904895","url":null,"abstract":"SiC power devices offer performance advantages over competing Si-based power devices, due to the wide bandgap and other key materials properties of 4H-SiC. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings (up to 10 kV), and with lower switching losses. The reliability of SiC power devices is excellent and has continued to improve due to continuing advancements in SiC substrate quality, epitaxial growth capabilities, and device processing. This has enabled the continually accelerating growth of SiC power device commercial adoption. This paper reviews the wear-out mechanisms and intrinsic reliability performance of power SiC devices as characterized by time-dependent dielectric breakdown (TDDB), accelerated life test high temperature reverse bias (ALT-HTRB), terrestrial neutron exposure, and power cycling. This paper also reviews some of the known failure mechanisms that have been characterized and addressed through technological advances. Finally, we present field return data that demonstrates less than 5 FIT (fails per billion device hours) for commercially produced SiC MOSFETs and Schottky diodes, with over 2 trillion device field hours.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115666403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 36

On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects 个别带电栅极氧化物缺陷引起的场效应晶体管阈值电压漂移分布

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2016.7904892

B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, P. Roussel, G. Rzepa, T. Grasser, N. Horiguchi

引用次数: 8

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs 功率器件的可靠性:GaN miss - hemt中偏置诱发的阈值电压不稳定和介电击穿

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2016.7904896

G. Meneghesso, D. Bisi, I. Rossetto, M. Ruzzarin, M. Meneghini, E. Zanoni

引用次数: 7